comprising a noble metal or a noble metal oxide

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H01L28/65

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor

Current Industry

H01L28/65comprising a noble metal or a noble metal oxide

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and semiconductor storage device
- Patent number 11,978,806
- Issue date May 7, 2024
- Kioxia Corporation
- Hikari Tajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual hydrogen barrier layer for trench capacitors integrated with l...
- Patent number 11,961,877
- Issue date Apr 16, 2024
- Kepler Computing Inc.
- Somilkumar J. Rathi
- G11 - INFORMATION STORAGE
Information Patent Grant
Metal-insulator-metal capacitor
- Patent number 11,955,509
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Jihyung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,949,017
- Issue date Apr 2, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,949,018
- Issue date Apr 2, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell, capacitive memory structure, and methods thereof
- Patent number 11,950,430
- Issue date Apr 2, 2024
- FERROELECTRIC MEMORY GMBH
- Stefan Ferdinand Müller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pedestal-based pocket integration process for embedded memory
- Patent number 11,942,133
- Issue date Mar 26, 2024
- Kepler Computing Inc.
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric random access memory (FRAM) capacitors and methods of...
- Patent number 11,937,434
- Issue date Mar 19, 2024
- Microchip Technology Incorporated
- Yaojian Leng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer electrode to improve performance of ferroelectric memor...
- Patent number 11,916,127
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,916,149
- Issue date Feb 27, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manganese-doped perovskite layers and semiconductor device incorpor...
- Patent number 11,908,943
- Issue date Feb 20, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a perovskite-material based planar capacitor...
- Patent number 11,908,704
- Issue date Feb 20, 2024
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a perovskite-material based trench capacitor...
- Patent number 11,894,417
- Issue date Feb 6, 2024
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
B-site doped perovskite layers and semiconductor device incorporati...
- Patent number 11,888,067
- Issue date Jan 30, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,888,066
- Issue date Jan 30, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual hydrogen barrier layer for memory devices
- Patent number 11,869,928
- Issue date Jan 9, 2024
- Kepler Computing Inc.
- Noriyuki Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory devices
- Patent number 11,871,583
- Issue date Jan 9, 2024
- Kepler Computing Inc.
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and forming method thereof
- Patent number 11,855,171
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Miin-Jang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device integrated with a transition electrode
- Patent number 11,854,593
- Issue date Dec 26, 2023
- Kepler Computing Inc.
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
B-site doped perovskite layers and semiconductor device incorporati...
- Patent number 11,848,386
- Issue date Dec 19, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,837,664
- Issue date Dec 5, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor connections in dielectric layers
- Patent number 11,832,438
- Issue date Nov 28, 2023
- Intel Corporation
- Travis W. Lajoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor apparatus including the same
- Patent number 11,817,475
- Issue date Nov 14, 2023
- Samsung Electronics Co., Ltd.
- Jaeho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,804,518
- Issue date Oct 31, 2023
- Samsung Electronics Co., Ltd.
- Jungmin Park
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Dielectric thin film, capacitor including the dielectric thin film,...
- Patent number 11,791,373
- Issue date Oct 17, 2023
- Samsung Electronics Co., Ltd.
- Hyungjun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric assemblies and methods of forming ferroelectric assem...
- Patent number 11,769,816
- Issue date Sep 26, 2023
- Micron Technology, Inc.
- Albert Liao
- G11 - INFORMATION STORAGE
Information Patent Grant
Rapid thermal annealing (RTA) methodologies for integration of pero...
- Patent number 11,769,790
- Issue date Sep 26, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,757,043
- Issue date Sep 12, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a majority logic gate having non-linear input capaci...
- Patent number 11,742,860
- Issue date Aug 29, 2023
- Kepler Computing Inc.
- Sasikanth Manipatruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric random access memory (FRAM) capacitors and methods of...
- Patent number 11,729,993
- Issue date Aug 15, 2023
- Microchip Technology Incorporated
- Yaojian Leng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FERROELECTRIC NANOPARTICLE CAPACITOR FOR NON-BINARY LOGICS
- Publication number 20240120366
- Publication date Apr 11, 2024
- Terra Quantum AG
- Anna Razumnaya
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF
- Publication number 20240088255
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Miin-Jang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240088299
- Publication date Mar 14, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR CONNECTIONS IN DIELECTRIC LAYERS
- Publication number 20240049450
- Publication date Feb 8, 2024
- Intel Corporation
- Travis W. LAJOIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240030278
- Publication date Jan 25, 2024
- Samsung Electronics Co., Ltd.
- Jungmin PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240030277
- Publication date Jan 25, 2024
- Samsung Electronics Co., Ltd.
- Jungmin Park
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Ferroelectric Film with Buffer Layers for Improved Reliability of M...
- Publication number 20230420491
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
- Publication number 20230411443
- Publication date Dec 21, 2023
- Intel Corporation
- Kaan OGUZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY METAL LAYERS IN ELECTRODE STACKS FOR TRANSITION METAL...
- Publication number 20230402499
- Publication date Dec 14, 2023
- Intel Corporation
- Thomas Sounart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Assemblies and Methods of Forming Ferroelectric Assem...
- Publication number 20230395690
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Albert Liao
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC RANDOM ACCESS MEMORY (FRAM) CAPACITORS AND METHODS OF...
- Publication number 20230345735
- Publication date Oct 26, 2023
- MICROCHIP TECHNOLOGY INCORPORATED
- Yaojian Leng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR AND MEMORY DEVICE
- Publication number 20230328958
- Publication date Oct 12, 2023
- Samsung Electronics Co., Ltd.
- Cheoljin CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230307516
- Publication date Sep 28, 2023
- Kabushiki Kaisha Toshiba
- Yuta SUGIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAJORITY GATE BASED LOW POWER FERROELECTRIC BASED ADDER WITH RESET...
- Publication number 20230308102
- Publication date Sep 28, 2023
- Kepler Computing, Inc.
- Sasikanth Manipatruni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED PLANAR CAPACITOR...
- Publication number 20230298905
- Publication date Sep 21, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230282417
- Publication date Sep 7, 2023
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Takeshi IGARASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH STRUCTURE FOR A CAPACITIVE DEVICE
- Publication number 20230268378
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- En-Shuo LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR DEVICES WITH STRONTIUM TITANATE INSULATOR LAYERS
- Publication number 20230253444
- Publication date Aug 10, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED TRENCH CAPACITOR...
- Publication number 20230246064
- Publication date Aug 3, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...
- Publication number 20230246063
- Publication date Aug 3, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...
- Publication number 20230246062
- Publication date Aug 3, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANGANESE-DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPOR...
- Publication number 20230231055
- Publication date Jul 20, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR
- Publication number 20230231004
- Publication date Jul 20, 2023
- Samsung Electronics Co., Ltd.
- Byunghoon NA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...
- Publication number 20230215952
- Publication date Jul 6, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...
- Publication number 20230215953
- Publication date Jul 6, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC OXIDE- AND FERROELECTRIC MONOCHALCOGENIDE-BASED CAPAC...
- Publication number 20230200079
- Publication date Jun 22, 2023
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL HYDROGEN BARRIER LAYER FOR MEMORY DEVICES
- Publication number 20230187476
- Publication date Jun 15, 2023
- Kepler Computing Inc.
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20230163160
- Publication date May 25, 2023
- Samsung Electronics Co., Ltd.
- JUNGMIN PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230163216
- Publication date May 25, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230155028
- Publication date May 18, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS

comprising a noble metal or a noble metal oxide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and semiconductor storage device

Dual hydrogen barrier layer for trench capacitors integrated with l...

Metal-insulator-metal capacitor

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Memory cell, capacitive memory structure, and methods thereof

Pedestal-based pocket integration process for embedded memory

Ferroelectric random access memory (FRAM) capacitors and methods of...

Multi-layer electrode to improve performance of ferroelectric memor...

Doped polar layers and semiconductor device incorporating same

Manganese-doped perovskite layers and semiconductor device incorpor...

Method of fabricating a perovskite-material based planar capacitor...

Method of fabricating a perovskite-material based trench capacitor...

B-site doped perovskite layers and semiconductor device incorporati...

Doped polar layers and semiconductor device incorporating same

Dual hydrogen barrier layer for memory devices

Ferroelectric memory devices

Semiconductor device and forming method thereof

Ferroelectric memory device integrated with a transition electrode

B-site doped perovskite layers and semiconductor device incorporati...

Doped polar layers and semiconductor device incorporating same

Capacitor connections in dielectric layers

Semiconductor device and semiconductor apparatus including the same

Semiconductor device and method of manufacturing the same

Dielectric thin film, capacitor including the dielectric thin film,...

Ferroelectric assemblies and methods of forming ferroelectric assem...

Rapid thermal annealing (RTA) methodologies for integration of pero...

Doped polar layers and semiconductor device incorporating same

Fabrication of a majority logic gate having non-linear input capaci...

Ferroelectric random access memory (FRAM) capacitors and methods of...

Patents Applicationslast 30 patents

FERROELECTRIC NANOPARTICLE CAPACITOR FOR NON-BINARY LOGICS

SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

CAPACITOR CONNECTIONS IN DIELECTRIC LAYERS

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Ferroelectric Film with Buffer Layers for Improved Reliability of M...

METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES

HIGH DENSITY METAL LAYERS IN ELECTRODE STACKS FOR TRANSITION METAL...

Ferroelectric Assemblies and Methods of Forming Ferroelectric Assem...

FERROELECTRIC RANDOM ACCESS MEMORY (FRAM) CAPACITORS AND METHODS OF...

CAPACITOR AND MEMORY DEVICE

SEMICONDUCTOR DEVICE

MAJORITY GATE BASED LOW POWER FERROELECTRIC BASED ADDER WITH RESET...

METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED PLANAR CAPACITOR...

CAPACITOR AND METHOD OF MANUFACTURING THE SAME

DEEP TRENCH STRUCTURE FOR A CAPACITIVE DEVICE

CAPACITOR DEVICES WITH STRONTIUM TITANATE INSULATOR LAYERS

METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED TRENCH CAPACITOR...

RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...

RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...

MANGANESE-DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPOR...

CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR

B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...

B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...

FERROELECTRIC OXIDE- AND FERROELECTRIC MONOCHALCOGENIDE-BASED CAPAC...

DUAL HYDROGEN BARRIER LAYER FOR MEMORY DEVICES

SEMICONDUCTOR DEVICES

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME