Concurrent filling of a plurality of trenches having a different trench shape or dimension

Industry

CPC
H01L21/76229

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/76229Concurrent filling of a plurality of trenches having a different trench shape or dimension

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating semiconductor device
- Patent number 12,191,299
- Issue date Jan 7, 2025
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Yifei Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of depositing silicon oxide films
- Patent number 12,188,121
- Issue date Jan 7, 2025
- ASM Genitech Korea Ltd.
- Tae Ho Yoon
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor devices and methods for fabricating the same
- Patent number 12,183,623
- Issue date Dec 31, 2024
- Yangtze Memory Technologies Co., Ltd.
- Huidan Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structures and methods of forming the same in field-effec...
- Patent number 12,170,334
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi Ning Ju
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing semiconductor device including isolation st...
- Patent number 12,154,821
- Issue date Nov 26, 2024
- NANYA TECHNOLOGY CORPORATION
- Ying-Cheng Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy fin structures and methods of forming same
- Patent number 12,154,822
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chin-Hsiang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,148,749
- Issue date Nov 19, 2024
- Samsung Electronics Co., Ltd.
- Cheol Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 12,144,173
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure cutting process and structures formed thereby
- Patent number 12,132,050
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array boundary structure to reduce dishing
- Patent number 12,127,399
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor trench capacitor structure and manufacturing method t...
- Patent number 12,119,414
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Fu-Chiang Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid isolation regions having upper and lower portions with seams
- Patent number 12,112,988
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor feature and method for manufacturing the same
- Patent number 12,107,001
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolations and methods of forming the same
- Patent number 12,087,801
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsien Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid scheme for improved performance for P-type and N-type FinFETs
- Patent number 12,074,167
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation (STI) contact structures and methods of fo...
- Patent number 12,068,368
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,057,342
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microfluidic channels sealed with directionally-grown plugs
- Patent number 12,040,252
- Issue date Jul 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ramsey Hazbun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a FinFET device
- Patent number 12,033,898
- Issue date Jul 9, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Joanna Chaw Yane Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device of dielectric layer
- Patent number 12,034,075
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Yun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having fins and method of fabricating the same
- Patent number 12,027,625
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Hao Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for FinFET device with asymmetric contact
- Patent number 12,009,426
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Gate electrodes with notches and methods for forming the same
- Patent number 12,009,214
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Feng Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having isolations between fins and comprisi...
- Patent number 12,002,766
- Issue date Jun 4, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yuan-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device with a dual gate dielectri...
- Patent number 11,968,828
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with a fin and gate structure and method making...
- Patent number 11,961,900
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,955,550
- Issue date Apr 9, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFet) device structure and method fo...
- Patent number 11,949,014
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Barn Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer between substrate and isolation structure
- Patent number 11,948,842
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including semiconductor liner and method for f...
- Patent number 11,929,279
- Issue date Mar 12, 2024
- SK Hynix Inc.
- Jin Woong Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ISOLATION STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICAT...
- Publication number 20250014941
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Chih-Yuan Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH DUAL LAYER ISOLATION STRUCTURE AND METHOD
- Publication number 20250006548
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsien-Chih HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET HEIGHT CONTROL WITH DENSE OXIDE SHALLOW TRENCH ISOLATION
- Publication number 20250006788
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION AND SHALLOW TRENCH...
- Publication number 20240420991
- Publication date Dec 19, 2024
- UNITED MICROELECTRONICS CORP.
- Jing-Wen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for FinFET Device with Asymmetric Contact
- Publication number 20240395935
- Publication date Nov 28, 2024
- Parabellum Strategic Opportunities Fund LLC
- Jhon Jhy LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20240395598
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
- Publication number 20240387239
- Publication date Nov 21, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Tsang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dummy Fin Structures and Methods of Forming Same
- Publication number 20240387240
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chin-Hsiang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240379409
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Jaeho Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and fabricating method of the same
- Publication number 20240379670
- Publication date Nov 14, 2024
- UNITED MICROELECTRONICS CORP.
- Ya-Ting Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FEATURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240371681
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY BOUNDARY STRUCTURE TO REDUCE DISHING
- Publication number 20240373626
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRENCH CAPACITOR STRUCTURE AND MANUFACTURING METHOD T...
- Publication number 20240372014
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- FU-CHIANG KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Cutting Process and Structures Formed Thereby
- Publication number 20240371869
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID ISOLATION REGIONS HAVING UPPER AND LOWER PORTIONS WITH SEAMS
- Publication number 20240363432
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATIONS AND METHODS OF FORMING THE SAME
- Publication number 20240363671
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hsien Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION (STI) CONTACT STRUCTURES AND METHODS OF FO...
- Publication number 20240355875
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tai-Yuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240347588
- Publication date Oct 17, 2024
- UNITED MICROELECTRONICS CORP.
- Chin-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A FINFET DEVICE
- Publication number 20240347390
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Joanna Chaw Yane Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20240332061
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Wei LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE OF DIELECTRIC LAYER
- Publication number 20240332419
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Yun PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME
- Publication number 20240313116
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Hao KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ISOLATION REGION INCLUDING COMBINATION...
- Publication number 20240313113
- Publication date Sep 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anton V. Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240312829
- Publication date Sep 19, 2024
- DB HiTek Co., Ltd.
- Sang Il HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20240282719
- Publication date Aug 22, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- YUAN-SHENG HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit with a Fin and Gate Structure and Method Making...
- Publication number 20240274694
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SEMICONDUCTIVE DEVICE COMPRISING A BACK GATE
- Publication number 20240213091
- Publication date Jun 27, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Heimanu NIEBOJEWSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING A DEEP TRENCH INSULATION A...
- Publication number 20240178054
- Publication date May 30, 2024
- STMicroelectronics S.r.l
- Emanuele LAGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MERGED TRENCHES SURROUNDED BY WIDER TRENCH FOR ISOLATING SEMICONDUC...
- Publication number 20240145293
- Publication date May 2, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Hao YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING FREE CONNECTION STRUCTURES AND METHODS
- Publication number 20240145298
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS

Concurrent filling of a plurality of trenches having a different trench shape or dimension

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of fabricating semiconductor device

Method of depositing silicon oxide films

Semiconductor devices and methods for fabricating the same

Isolation structures and methods of forming the same in field-effec...

Method of manufacturing semiconductor device including isolation st...

Dummy fin structures and methods of forming same

Semiconductor device and method for fabricating the same

Seal method to integrate non-volatile memory (NVM) into logic or bi...

Semiconductor structure cutting process and structures formed thereby

Array boundary structure to reduce dishing

Semiconductor trench capacitor structure and manufacturing method t...

Hybrid isolation regions having upper and lower portions with seams

Semiconductor feature and method for manufacturing the same

Deep trench isolations and methods of forming the same

Hybrid scheme for improved performance for P-type and N-type FinFETs

Shallow trench isolation (STI) contact structures and methods of fo...

Semiconductor device and method

Microfluidic channels sealed with directionally-grown plugs

Method of fabricating a FinFET device

Device of dielectric layer

Semiconductor device having fins and method of fabricating the same

Structure and method for FinFET device with asymmetric contact

Gate electrodes with notches and methods for forming the same

Semiconductor structure having isolations between fins and comprisi...

Method of forming a semiconductor device with a dual gate dielectri...

Integrated circuit with a fin and gate structure and method making...

Semiconductor device

Fin field effect transistor (FinFet) device structure and method fo...

Etch stop layer between substrate and isolation structure

Semiconductor device including semiconductor liner and method for f...

Patents Applicationslast 30 patents

ISOLATION STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICAT...

FIELD EFFECT TRANSISTOR WITH DUAL LAYER ISOLATION STRUCTURE AND METHOD

NANOSHEET HEIGHT CONTROL WITH DENSE OXIDE SHALLOW TRENCH ISOLATION

SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION AND SHALLOW TRENCH...

Structure and Method for FinFET Device with Asymmetric Contact

Semiconductor Device and Method

MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE

Dummy Fin Structures and Methods of Forming Same

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Semiconductor device and fabricating method of the same

SEMICONDUCTOR FEATURE AND METHOD FOR MANUFACTURING THE SAME

ARRAY BOUNDARY STRUCTURE TO REDUCE DISHING

SEMICONDUCTOR TRENCH CAPACITOR STRUCTURE AND MANUFACTURING METHOD T...

Semiconductor Structure Cutting Process and Structures Formed Thereby

HYBRID ISOLATION REGIONS HAVING UPPER AND LOWER PORTIONS WITH SEAMS

DEEP TRENCH ISOLATIONS AND METHODS OF FORMING THE SAME

SHALLOW TRENCH ISOLATION (STI) CONTACT STRUCTURES AND METHODS OF FO...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHOD OF FABRICATING A FINFET DEVICE

ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME

DEVICE OF DIELECTRIC LAYER

SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE WITH ISOLATION REGION INCLUDING COMBINATION...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHODS FOR FORMING SEMICONDUCTOR STRUCTURE

Integrated Circuit with a Fin and Gate Structure and Method Making...

METHOD FOR PRODUCING A SEMICONDUCTIVE DEVICE COMPRISING A BACK GATE

HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING A DEEP TRENCH INSULATION A...

MERGED TRENCHES SURROUNDED BY WIDER TRENCH FOR ISOLATING SEMICONDUC...

DOPING FREE CONNECTION STRUCTURES AND METHODS