controllable by variation of the magnetic field applied to the device

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/82controllable by variation of the magnetic field applied to the device

Industries

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit package with magnet having a channel
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- Issue date Apr 16, 2024
- ALLEGRO MICROSYSTEMS, LLC
- Ravi Vig
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction device, method for manufacturing magnetic...
- Patent number 11,963,458
- Issue date Apr 16, 2024
- TOHOKU UNIVERSITY
- Koichi Nishioka
- G11 - INFORMATION STORAGE
Information Patent Grant
Device for storing controlling and manipulating quantum information...
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- Issue date Apr 9, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
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- United Microelectronics Corp.
- Hui-Lin Wang
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Information Patent Grant
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- Nicole K. Thomas
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Minimal thickness synthetic antiferromagnetic (SAF) structure with...
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- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Robert Beach
- G11 - INFORMATION STORAGE
Information Patent Grant
Domain wall moving element, domain wall moving type magnetic record...
- Patent number 11,894,172
- Issue date Feb 6, 2024
- TDK Corporation
- Tetsuhito Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
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- Issue date Jan 9, 2024
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for fabricating the same
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- Issue date Dec 19, 2023
- United Microelectronics Corp.
- Hui-Lin Wang
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Information Patent Grant
Magnetic domain wall displacement element, magnetic recording array...
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Information Patent Grant
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- B82 - NANO-TECHNOLOGY
Information Patent Grant
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices
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- Intel Corporation
- Kanwaljit Singh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Sensor integrated circuit with integrated coil and element in centr...
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum well stacks for quantum dot devices
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Information Patent Grant
Quantum dot devices
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- Issue date May 30, 2023
- Intel Corporation
- Hubert C. George
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin current magnetization rotational element
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- Issue date Apr 25, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Quantum dot devices with passive barrier elements in a quantum well...
- Patent number 11,616,126
- Issue date Mar 28, 2023
- Intel Corporation
- Hubert C. George
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin current magnetization rotational element
- Patent number 11,611,037
- Issue date Mar 21, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G01 - MEASURING TESTING
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,600,771
- Issue date Mar 7, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Quantum dot array devices
- Patent number 11,594,599
- Issue date Feb 28, 2023
- Intel Corporation
- James S. Clarke
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory element, memory apparatus
- Patent number RE49364
- Issue date Jan 10, 2023
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- Hiroyuki Uchida
Information Patent Grant
Semiconductor device with embedded magnetic storage structure and m...
- Patent number 11,545,523
- Issue date Jan 3, 2023
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- Chang-Chieh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMP stop layer and sacrifice layer for high yield small size MRAM d...
- Patent number 11,545,622
- Issue date Jan 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrostatically controlled gallium nitride based sensor and metho...
- Patent number 11,522,079
- Issue date Dec 6, 2022
- Tower Semiconductor Ltd.
- Yakov Roizin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
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- Issue date Nov 22, 2022
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- Hui-Lin Wang
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Information Patent Grant
Quantum dot devices
- Patent number 11,482,614
- Issue date Oct 25, 2022
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- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Quantum dot devices with diodes for electrostatic discharge protection
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- Issue date Sep 20, 2022
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- Hubert C. George
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Quantum dot devices
- Patent number 11,444,188
- Issue date Sep 13, 2022
- Intel Corporation
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic field sensor integrated circuit with an integrated coil en...
- Patent number 11,444,209
- Issue date Sep 13, 2022
- ALLEGRO MICROSYSTEMS, LLC
- Ravi Vig
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT
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- Publication date Apr 18, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G01 - MEASURING TESTING
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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240081157
- Publication date Mar 7, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240074328
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- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT PACKAGE WITH MAGNET HAVING A CHANNEL
- Publication number 20230261118
- Publication date Aug 17, 2023
- ALLEGRO MICROSYSTEMS, LLC
- Ravi Vig
- G01 - MEASURING TESTING
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MAGNETORESISTANCE EFFECT ELEMENT
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- G11 - INFORMATION STORAGE
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MAGNETIC MEMORY DEVICE
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- Yongjae LEE
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Hall Effect Prism Sensor
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Hall Effect Prism Sensor
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DEVICE FOR STORING CONTROLLING AND MANIPULATING QUANTUM INFORMATION...
- Publication number 20230037618
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- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Hélène JACQUINOT
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230038528
- Publication date Feb 9, 2023
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
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MAGNETOELECTRIC SPIN ORBIT LOGIC TRANSISTOR WITH A SPIN FILTER
- Publication number 20220352358
- Publication date Nov 3, 2022
- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
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SYSTEMS, DEVICES, AND METHODS TO INTERACT WITH QUANTUM INFORMATION...
- Publication number 20220327411
- Publication date Oct 13, 2022
- PHOTONIC INC.
- Stephanie SIMMONS
- B82 - NANO-TECHNOLOGY
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SENSOR INTEGRATED CIRCUIT WITH INTEGRATED COIL
- Publication number 20220310853
- Publication date Sep 29, 2022
- ALLEGRO MICROSYSTEMS, LLC
- Ravi Vig
- H01 - BASIC ELECTRIC ELEMENTS
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SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT
- Publication number 20220231221
- Publication date Jul 21, 2022
- TDK Corporation
- Tomoyuki SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
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SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EF...
- Publication number 20220223786
- Publication date Jul 14, 2022
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- H01 - BASIC ELECTRIC ELEMENTS
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QUANTUM DOT DEVICES WITH SINGLE ELECTRON TRANSISTOR DETECTORS
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- Publication date May 5, 2022
- Intel Corporation
- Hubert C. George
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE WITH EMBEDDED MAGNETIC STORAGE STRUCTURE AND M...
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- Publication date Feb 24, 2022
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MAGNETIC DOMAIN WALL DISPLACEMENT ELEMENT, MAGNETIC RECORDING ARRAY...
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- Shogo YAMADA
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- Ravi Pillarisetty
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SPIN-CURRENT MAGNETIZATION REVERSAL ELEMENT, MAGNETORESISTANCE EFFE...
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- Publication date Dec 2, 2021
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- Yohei SHIOKAWA
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MAGNETORESISTANCE EFFECT ELEMENT
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- Publication date Oct 21, 2021
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
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QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES
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- Publication date Oct 21, 2021
- Intel Corporation
- Nicole K. Thomas
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SEMICONDUCTOR DEVICE WITH EMBEDDED MAGNETIC STORAGE STRUCTURE AND M...
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- Publication date Oct 7, 2021
- NANYA TECHNOLOGY CORPORATION
- Chang-Chieh LIN
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
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- Semiconductor Manufacturing International (Shanghai) Corporation
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SPIN TRANSISTORS BASED ON VOLTAGE-CONTROLLED MAGNON TRANSPORT IN MU...
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- Publication date Sep 9, 2021
- Wisconsin Alumni Research Foundation
- Chang-Beom EOM
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Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20210257542
- Publication date Aug 19, 2021
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure With...
- Publication number 20210210674
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Robert Beach
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, MAGNETIZATION ROT...
- Publication number 20210184106
- Publication date Jun 17, 2021
- TDK Corporation
- Tomoyuki SASAKI
- G01 - MEASURING TESTING
Information Patent Application
Electrostatically Controlled Gallium Nitride Based Sensor And Metho...
- Publication number 20210119028
- Publication date Apr 22, 2021
- Tower Semiconductor Ltd.
- Yakov Roizin
- H01 - BASIC ELECTRIC ELEMENTS

controllable by variation of the magnetic field applied to the device

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Integrated circuit package with magnet having a channel

Magnetic tunnel junction device, method for manufacturing magnetic...

Device for storing controlling and manipulating quantum information...

Semiconductor device and method for fabricating the same

Quantum dot devices with overlapping gates

Minimal thickness synthetic antiferromagnetic (SAF) structure with...

Domain wall moving element, domain wall moving type magnetic record...

Magnetoresistance effect element

Semiconductor device and method for fabricating the same

Magnetic domain wall displacement element, magnetic recording array...

Gate walls for quantum dot devices

Quantum well stacks for quantum dot devices

Quantum dot devices

Sensor integrated circuit with integrated coil and element in centr...

Quantum well stacks for quantum dot devices

Quantum dot devices

Spin current magnetization rotational element

Quantum dot devices with passive barrier elements in a quantum well...

Spin current magnetization rotational element

Magnetoresistance effect element

Quantum dot array devices

Memory element, memory apparatus

Semiconductor device with embedded magnetic storage structure and m...

CMP stop layer and sacrifice layer for high yield small size MRAM d...

Electrostatically controlled gallium nitride based sensor and metho...

Semiconductor device and method for fabricating the same

Quantum dot devices

Quantum dot devices with diodes for electrostatic discharge protection

Quantum dot devices

Magnetic field sensor integrated circuit with an integrated coil en...

Patents Applicationslast 30 patents

MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

INTEGRATED CIRCUIT PACKAGE WITH MAGNET HAVING A CHANNEL

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETIC MEMORY DEVICE

MAGNETORESISTIVE EFFECT ELEMENT

Hall Effect Prism Sensor

Hall Effect Prism Sensor

DEVICE FOR STORING CONTROLLING AND MANIPULATING QUANTUM INFORMATION...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MAGNETOELECTRIC SPIN ORBIT LOGIC TRANSISTOR WITH A SPIN FILTER

SYSTEMS, DEVICES, AND METHODS TO INTERACT WITH QUANTUM INFORMATION...

SENSOR INTEGRATED CIRCUIT WITH INTEGRATED COIL

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EF...

QUANTUM DOT DEVICES WITH SINGLE ELECTRON TRANSISTOR DETECTORS

SEMICONDUCTOR DEVICE WITH EMBEDDED MAGNETIC STORAGE STRUCTURE AND M...

MAGNETIC DOMAIN WALL DISPLACEMENT ELEMENT, MAGNETIC RECORDING ARRAY...

QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES

SPIN-CURRENT MAGNETIZATION REVERSAL ELEMENT, MAGNETORESISTANCE EFFE...

MAGNETORESISTANCE EFFECT ELEMENT

QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES

SEMICONDUCTOR DEVICE WITH EMBEDDED MAGNETIC STORAGE STRUCTURE AND M...

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

SPIN TRANSISTORS BASED ON VOLTAGE-CONTROLLED MAGNON TRANSPORT IN MU...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure With...

MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, MAGNETIZATION ROT...

Electrostatically Controlled Gallium Nitride Based Sensor And Metho...