Deep level dopants

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CPC
Y10S148/023

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/023Deep level dopants

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Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 7,799,690
- Issue date Sep 21, 2010
- Renesas Electronics Corporation
- Yoshikazu Tanabe
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 7,250,376
- Issue date Jul 31, 2007
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 7,053,007
- Issue date May 30, 2006
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 7,008,880
- Issue date Mar 7, 2006
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,962,880
- Issue date Nov 8, 2005
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,962,881
- Issue date Nov 8, 2005
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,855,642
- Issue date Feb 15, 2005
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,596,650
- Issue date Jul 22, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,569,780
- Issue date May 27, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit drive using...
- Patent number 6,528,431
- Issue date Mar 4, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,518,201
- Issue date Feb 11, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,518,202
- Issue date Feb 11, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,417,114
- Issue date Jul 9, 2002
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,239,041
- Issue date May 29, 2001
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing sheets of crystalline material and devices made...
- Patent number 5,676,752
- Issue date Oct 14, 1997
- Massachusetts Institute of Technology
- Carl O. Bozler
- C30 - CRYSTAL GROWTH
Information Patent Grant
CMOS latchup suppression by localized minority carrier lifetime red...
- Patent number 5,441,900
- Issue date Aug 15, 1995
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS latchup suppression by localized minority carrier lifetime red...
- Patent number 5,384,477
- Issue date Jan 24, 1995
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor components with short switch...
- Patent number 5,371,040
- Issue date Dec 6, 1994
- Temic Telefunken Microelectronic GmbH
- Klaus Graff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing sheets of crystalline material and devices made...
- Patent number 5,362,682
- Issue date Nov 8, 1994
- Massachusetts Institute of Technology
- Carl O. Bozler
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for increasing the electric strength of a multi-layer semico...
- Patent number 5,284,780
- Issue date Feb 8, 1994
- Siemens Aktiengesellschaft
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TEOV doping of gallium arsenide
- Patent number 5,252,512
- Issue date Oct 12, 1993
- United Technologies Corporation
- Alexander J. Shuskus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-insulating cobalt doped indium phosphide grown by MOCVD
- Patent number 5,045,496
- Issue date Sep 3, 1991
- Rockwell International Corporation
- Kenneth L. Hess
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of controlling dopant incorporation in high resistivity In-b...
- Patent number 4,999,315
- Issue date Mar 12, 1991
- AT&T Bell Laboratories
- Wilbur D. Johnston
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of semi-insulating indium phosphide by liquid phase epitaxy
- Patent number 4,849,373
- Issue date Jul 18, 1989
- Northern Telecom Limited
- D. Gordon Knight
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing thin conductive and semi-conductive layers in...
- Patent number 4,837,174
- Issue date Jun 6, 1989
- Stiftelsen Institutet for Microvagsteknik VID
- Sture Peterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-insulating group III-V based compositions doped using bis aren...
- Patent number 4,782,034
- Issue date Nov 1, 1988
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- Andrew G. Dentai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Quantized layered structures with adjusted indirect bandgap transit...
- Patent number 4,675,709
- Issue date Jun 23, 1987
- Xerox Corporation
- Donald R. Scifres
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor bipolar integrated circuit device and method for fabr...
- Patent number 4,642,883
- Issue date Feb 17, 1987
- Fujitsu Limited
- Junji Sakurai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase epitaxial growth of carbon doped layers of Group III-V...
- Patent number 4,632,710
- Issue date Dec 30, 1986
- Raytheon Company
- H. Barteld Van Rees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling lifetime of minority carriers by electron bea...
- Patent number 4,585,489
- Issue date Apr 29, 1986
- Kabushiki Kaisha Toshiba
- Shun-ichi Hiraki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for fabricating semiconductor intergrated circuit device
- Publication number 20080045027
- Publication date Feb 21, 2008
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20050227501
- Publication date Oct 13, 2005
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20050208731
- Publication date Sep 22, 2005
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20040161945
- Publication date Aug 19, 2004
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20040157468
- Publication date Aug 12, 2004
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor intergrated circuit device
- Publication number 20040157467
- Publication date Aug 12, 2004
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20030219995
- Publication date Nov 27, 2003
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20020009898
- Publication date Jan 24, 2002
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20020004315
- Publication date Jan 10, 2002
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20010010975
- Publication date Aug 2, 2001
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20010009813
- Publication date Jul 26, 2001
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20010006853
- Publication date Jul 5, 2001
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS

Deep level dopants

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit drive using...

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method of producing sheets of crystalline material and devices made...

CMOS latchup suppression by localized minority carrier lifetime red...

CMOS latchup suppression by localized minority carrier lifetime red...

Method for manufacturing semiconductor components with short switch...

Method of producing sheets of crystalline material and devices made...

Method for increasing the electric strength of a multi-layer semico...

TEOV doping of gallium arsenide

Semi-insulating cobalt doped indium phosphide grown by MOCVD

Method of controlling dopant incorporation in high resistivity In-b...

Growth of semi-insulating indium phosphide by liquid phase epitaxy

Method for producing thin conductive and semi-conductive layers in...

Semi-insulating group III-V based compositions doped using bis aren...

Quantized layered structures with adjusted indirect bandgap transit...

Semiconductor bipolar integrated circuit device and method for fabr...

Vapor phase epitaxial growth of carbon doped layers of Group III-V...

Method of controlling lifetime of minority carriers by electron bea...

Patents Applicationslast 30 patents

Method for fabricating semiconductor intergrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor intergrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device