Defect control-gettering and annealing

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CPC
Y10S148/024

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/024Defect control-gettering and annealing

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Patents Grantslast 30 patents

Information Patent Grant
Modification of interfacial fields between dielectrics and semicond...
- Patent number 6,117,749
- Issue date Sep 12, 2000
- National Semiconductor Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer having plasma CVD gettering layer with components/com...
- Patent number 5,998,283
- Issue date Dec 7, 1999
- Shin-Etsu Handotai Co., Ltd.
- Shoichi Takamizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling dopant concentrations using transient-enhance...
- Patent number 5,976,956
- Issue date Nov 2, 1999
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the preparation of silicon wafers having a controlled d...
- Patent number 5,882,989
- Issue date Mar 16, 1999
- MEMC Electronic Materials, Inc.
- Robert Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Impurity gettering in silicon using cavities formed by helium impla...
- Patent number 5,840,590
- Issue date Nov 24, 1998
- Sandia Corporation
- Samuel M. Myers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET device having denuded zones for forming alignment marks
- Patent number 5,693,976
- Issue date Dec 2, 1997
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ying-Chen Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing patterning alignment marks in oxide
- Patent number 5,478,762
- Issue date Dec 26, 1995
- Taiwan Semiconductor Manufacturing Company
- Ying-Chen Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device using implantation an...
- Patent number 5,407,838
- Issue date Apr 18, 1995
- Sharp Kabushiki Kaisha
- Tetsuya Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the preparation of silicon wafers having controlled dis...
- Patent number 5,401,669
- Issue date Mar 28, 1995
- MEMC Electronic Materials, SpA
- Robert Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming gate oxide by TLC gettering clean
- Patent number 5,393,686
- Issue date Feb 28, 1995
- Taiwan Semiconductor Manufacturing Company
- Wei-kun Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 5,322,810
- Issue date Jun 21, 1994
- Sharp Kabushiki Kaisha
- Akitsu Ayukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doping a semiconductor substrate
- Patent number 5,312,764
- Issue date May 17, 1994
- Motorola, Inc.
- Clifford I. Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for contamination removal and minority carrier lifetime imp...
- Patent number 5,272,119
- Issue date Dec 21, 1993
- MEMC Electronic Materials, SpA
- Robert Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to getter contamination in semiconductor devices
- Patent number 5,244,819
- Issue date Sep 14, 1993
- Honeywell Inc.
- Jerry C. Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for heat-treating gallium arsenide monocrystals
- Patent number 5,228,927
- Issue date Jul 20, 1993
- Shin-Etsu Handotai Company Limited
- Yutaka Kitagawara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 5,217,912
- Issue date Jun 8, 1993
- Sharp Kabushiki Kaisha
- Akitsu Ayukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for inhibiting slip and microcracking while forming epitaxi...
- Patent number 5,198,071
- Issue date Mar 30, 1993
- Applied Materials, Inc.
- Lance Scudder
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for internal gettering of oxygen in III-V compound semicondu...
- Patent number 5,183,767
- Issue date Feb 2, 1993
- International Business Machines Corporation
- Herve Baratte
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a semiconductor device with a bulk-defect reg...
- Patent number 5,094,963
- Issue date Mar 10, 1992
- Fujitsu Limited
- Takao Hiraguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing semiconductor wafer through gettering using sph...
- Patent number 5,051,375
- Issue date Sep 24, 1991
- Kyushu Electronic Metal Co., Ltd.
- Sueo Sakata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for backside damage of silicon wafers
- Patent number 5,006,475
- Issue date Apr 9, 1991
- Texas Instruments Incorporated
- John Robbins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor manufacturing device
- Patent number 4,986,213
- Issue date Jan 22, 1991
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an article comprising a III/V semiconductor device
- Patent number 4,977,103
- Issue date Dec 11, 1990
- AT&T Bell Laboratories
- Naresh Chand
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device and a process for producing a semiconductor de...
- Patent number 4,970,568
- Issue date Nov 13, 1990
- Fujitsu Limited
- Takao Hiraguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for photo annealing non-single crystalline semiconductor films
- Patent number 4,888,305
- Issue date Dec 19, 1989
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gettering process with multi-step annealing and inert ion implantation
- Patent number 4,885,257
- Issue date Dec 5, 1989
- Kabushiki Kaisha Toshiba
- Yoshiaki Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer fabrication with improved control of internal g...
- Patent number 4,868,133
- Issue date Sep 19, 1989
- DNS Electronic Materials, Inc.
- Walter Huber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer fabrication with improved control of internal g...
- Patent number 4,851,358
- Issue date Jul 25, 1989
- DNS Electronic Materials, Inc.
- Walter Huber
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing thin conductive and semi-conductive layers in...
- Patent number 4,837,174
- Issue date Jun 6, 1989
- Stiftelsen Institutet for Microvagsteknik VID
- Sture Peterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of gettering a semiconductor device and forming an isolation...
- Patent number 4,766,086
- Issue date Aug 23, 1988
- Kabushiki Kaisha Toshiba
- Jiro Ohshima
- H01 - BASIC ELECTRIC ELEMENTS

Defect control-gettering and annealing

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Modification of interfacial fields between dielectrics and semicond...

Silicon wafer having plasma CVD gettering layer with components/com...

Method of controlling dopant concentrations using transient-enhance...

Process for the preparation of silicon wafers having a controlled d...

Impurity gettering in silicon using cavities formed by helium impla...

MOSFET device having denuded zones for forming alignment marks

Method for producing patterning alignment marks in oxide

Method for fabricating a semiconductor device using implantation an...

Process for the preparation of silicon wafers having controlled dis...

Method of forming gate oxide by TLC gettering clean

Method for manufacturing a semiconductor device

Method of doping a semiconductor substrate

Process for contamination removal and minority carrier lifetime imp...

Method to getter contamination in semiconductor devices

Method for heat-treating gallium arsenide monocrystals

Method for manufacturing a semiconductor device

Process for inhibiting slip and microcracking while forming epitaxi...

Method for internal gettering of oxygen in III-V compound semicondu...

Process for producing a semiconductor device with a bulk-defect reg...

Method of producing semiconductor wafer through gettering using sph...

Method for backside damage of silicon wafers

Semiconductor manufacturing device

Method of making an article comprising a III/V semiconductor device

Semiconductor device and a process for producing a semiconductor de...

Method for photo annealing non-single crystalline semiconductor films

Gettering process with multi-step annealing and inert ion implantation

Semiconductor wafer fabrication with improved control of internal g...

Semiconductor wafer fabrication with improved control of internal g...

Method for producing thin conductive and semi-conductive layers in...

Method of gettering a semiconductor device and forming an isolation...

Patents Applicationslast 30 patents