Devices using galvano-magnetic or similar magnetic effects Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 11,706,999
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 11,696,511
- Issue date Jul 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and Heusler alloy
- Patent number 11,694,714
- Issue date Jul 4, 2023
- TDK Corporation
- Kazuumi Inubushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive stack with seed region and method of manufacturing...
- Patent number 11,690,229
- Issue date Jun 27, 2023
- EVERSPIN TECHNOLOGIES, INC.
- Jijun Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Forced current access with voltage clamping in cross-point array
- Patent number 11,688,446
- Issue date Jun 27, 2023
- SanDisk Technologies LLC
- Michael Nicolas Albert Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic field controlled transistor
- Patent number 11,683,938
- Issue date Jun 20, 2023
- International Business Machines Corporation
- Cezar Bogdan Zota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device
- Patent number 11,683,992
- Issue date Jun 20, 2023
- Samsung Electronics Co., Ltd.
- Hyungjong Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forced current access with voltage clamping in cross-point array
- Patent number 11,682,442
- Issue date Jun 20, 2023
- SanDisk Technologies LLC
- Michael Nicolas Albert Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,683,988
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method of the same
- Patent number 11,683,991
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with asymmetrical pinned magnets, and method o...
- Patent number 11,678,585
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mingyuan Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hall device
- Patent number 11,678,588
- Issue date Jun 13, 2023
- Infineon Technologies AG
- Udo Ausserlechner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory systems with vertical integration
- Patent number 11,676,641
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chieh Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing magnetic tunnel junction and magnetic tunne...
- Patent number 11,678,583
- Issue date Jun 13, 2023
- HITACHI HIGH-TECH CORPORATION
- Yu Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a crystalline metal-phosphide hetero-layer b...
- Patent number 11,674,237
- Issue date Jun 13, 2023
- International Business Machines Corporation
- Yannick Baumgartner
- C30 - CRYSTAL GROWTH
Information Patent Grant
Seed layer for multilayer magnetic materials
- Patent number 11,672,182
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device having a ferromagnetic element
- Patent number 11,672,183
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Sang Hwan Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory
- Patent number 11,672,181
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huang-Wen Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction (MTJ) device and manufacturing method thereof
- Patent number 11,672,184
- Issue date Jun 6, 2023
- United Microelectronics Corp.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 11,672,185
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices and methods of manufacturing
- Patent number 11,672,180
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsung-Hsueh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 11,672,186
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with embedded magnetic flux concentrator
- Patent number 11,668,766
- Issue date Jun 6, 2023
- Melexis Technologies SA
- Appolonius Jacobus Van Der Wiel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming memory cell
- Patent number 11,665,911
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive random access memory (MRAM) device
- Patent number 11,665,970
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Whan-Kyun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin orbit coupling memory device with top spin orbit coupling elec...
- Patent number 11,665,975
- Issue date May 30, 2023
- Intel Corporation
- Tanay Gosavi
- G11 - INFORMATION STORAGE
Information Patent Grant
Reservoir element and neuromorphic element
- Patent number 11,665,976
- Issue date May 30, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Metal etching stop layer in magnetic tunnel junction memory cells
- Patent number 11,665,971
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction device and method
- Patent number 11,665,977
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic junctions having enhanced tunnel magnetoresistance and uti...
- Patent number 11,665,979
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SWITCHABLE MAGNETIC DEVICE OR DOT FOR DATA STORAGE
- Publication number 20240147869
- Publication date May 2, 2024
- Harry Joseph TRODAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM DEVICE WITH OCTAGON PROFILE
- Publication number 20240135978
- Publication date Apr 25, 2024
- International Business Machines Corporation
- Oscar van der Straten
- G11 - INFORMATION STORAGE
Information Patent Application
TOP CONTACT STRUCTURE FOR EMBEDDED MRAM
- Publication number 20240130242
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Ailian Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20240130243
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Timothy Mathew Philip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHAMFERED MRAM DEVICE STRUCTURE
- Publication number 20240130244
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Oscar van der Straten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM DEVICE STRUCTURE WITH IMPROVED TOP ELECTRODE
- Publication number 20240130245
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Oscar van der Straten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulatio...
- Publication number 20240122076
- Publication date Apr 11, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE MRAM WITH FRONTSIDE DEVICES
- Publication number 20240114699
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL
- Publication number 20240112712
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING TH...
- Publication number 20240114803
- Publication date Apr 4, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Dev...
- Publication number 20240112840
- Publication date Apr 4, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240107890
- Publication date Mar 28, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE
- Publication number 20240107896
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOT MRAM STRUCTURE AND FABRICATING METHOD OF THE SAME
- Publication number 20240107777
- Publication date Mar 28, 2024
- UNITED MICROELECTRONICS CORP.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...
- Publication number 20240107893
- Publication date Mar 28, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- G11 - INFORMATION STORAGE
Information Patent Application
STACKED FET WITH THREE-TERMINAL SOT MRAM
- Publication number 20240105244
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE SENSOR WITH BIASED FREE LAYER FOR IMPROVED STABIL...
- Publication number 20240107892
- Publication date Mar 28, 2024
- Apple Inc.
- Jason Janesky
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM DEVICE WITH ANNULAR ELECTRODES
- Publication number 20240107894
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Oscar van der Straten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETO RESISTIVE ELEMENT
- Publication number 20240099152
- Publication date Mar 21, 2024
- TDK Corporation
- Kazuumi INUBUSHI
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER
- Publication number 20240099148
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Hsueh-Chung Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Pillar Based Memory (MRAM) Embedded within the Buried Power Rail wi...
- Publication number 20240090235
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Wu-Chang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH TOP AND BOTTOM ELECTRODE...
- Publication number 20240090337
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Oscar van der Straten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM WITH DOPED SILICON-GERMANIUM-TIN ALLOY ELECTRODES
- Publication number 20240090339
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetoresistive Device Comprising A Synthetic Antiferromagnetic Co...
- Publication number 20240087785
- Publication date Mar 14, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION STRUCTURE WITH NON-MAGNETIC AMORPHOUS INSE...
- Publication number 20240081155
- Publication date Mar 7, 2024
- HeFeChip Corporation Limited
- Young-suk Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING AN ELECTROCONDUCTIVE CONTACT ON A TOP LAYER OF A TUNNEL...
- Publication number 20240074322
- Publication date Feb 29, 2024
- ALLEGRO MICROSYSTEMS, LLC
- Maxim Klebanov
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC DOMAIN WALL MOVING ELEMENT AND MAGNETIC ARRAY
- Publication number 20240074325
- Publication date Feb 29, 2024
- TDK Corporation
- Shogo YONEMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20240065108
- Publication date Feb 22, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240057483
- Publication date Feb 15, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM INTEGRATION WITH SELF-ALIGNED DIRECT BACK SIDE CONTACT
- Publication number 20240057345
- Publication date Feb 15, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

Devices using galvano-magnetic or similar magnetic effects Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof

Industry

Parent Industries

Current Industry

Sub Industries

Patents Grantslast 30 patents

Semiconductor device and manufacturing method of semiconductor device

Low resistance MgO capping layer for perpendicularly magnetized mag...

Magnetoresistance effect element and Heusler alloy

Magnetoresistive stack with seed region and method of manufacturing...

Forced current access with voltage clamping in cross-point array

Magnetic field controlled transistor

Magnetic memory device

Forced current access with voltage clamping in cross-point array

Semiconductor device

Semiconductor structure and manufacturing method of the same

Semiconductor device with asymmetrical pinned magnets, and method o...

Hall device

Memory systems with vertical integration

Method of manufacturing magnetic tunnel junction and magnetic tunne...

Method for fabricating a crystalline metal-phosphide hetero-layer b...

Seed layer for multilayer magnetic materials

Magnetic memory device having a ferromagnetic element

Magnetic random access memory

Magnetic tunnel junction (MTJ) device and manufacturing method thereof

Magnetic device and magnetic random access memory

Semiconductor devices and methods of manufacturing

Semiconductor device and manufacturing method of semiconductor device

Semiconductor device with embedded magnetic flux concentrator

Method of forming memory cell

Magnetoresistive random access memory (MRAM) device

Spin orbit coupling memory device with top spin orbit coupling elec...

Reservoir element and neuromorphic element

Metal etching stop layer in magnetic tunnel junction memory cells

Magnetic tunnel junction device and method

Magnetic junctions having enhanced tunnel magnetoresistance and uti...

Patents Applicationslast 30 patents

SWITCHABLE MAGNETIC DEVICE OR DOT FOR DATA STORAGE

MRAM DEVICE WITH OCTAGON PROFILE

TOP CONTACT STRUCTURE FOR EMBEDDED MRAM

MAGNETIC TUNNEL JUNCTION DEVICE

CHAMFERED MRAM DEVICE STRUCTURE

MRAM DEVICE STRUCTURE WITH IMPROVED TOP ELECTRODE

CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulatio...

BACKSIDE MRAM WITH FRONTSIDE DEVICES

SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL

MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING TH...

Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Dev...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE

SOT MRAM STRUCTURE AND FABRICATING METHOD OF THE SAME

Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...

STACKED FET WITH THREE-TERMINAL SOT MRAM

MAGNETORESISTANCE SENSOR WITH BIASED FREE LAYER FOR IMPROVED STABIL...

MRAM DEVICE WITH ANNULAR ELECTRODES

MAGNETO RESISTIVE ELEMENT

MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER

Pillar Based Memory (MRAM) Embedded within the Buried Power Rail wi...

MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH TOP AND BOTTOM ELECTRODE...

MRAM WITH DOPED SILICON-GERMANIUM-TIN ALLOY ELECTRODES

Magnetoresistive Device Comprising A Synthetic Antiferromagnetic Co...

MAGNETIC TUNNEL JUNCTION STRUCTURE WITH NON-MAGNETIC AMORPHOUS INSE...

FABRICATING AN ELECTROCONDUCTIVE CONTACT ON A TOP LAYER OF A TUNNEL...

MAGNETIC DOMAIN WALL MOVING ELEMENT AND MAGNETIC ARRAY

HIGH DENSITY MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE

MAGNETIC MEMORY DEVICE AND FABRICATION METHOD THEREOF

MRAM INTEGRATION WITH SELF-ALIGNED DIRECT BACK SIDE CONTACT