for field-effect transistors

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H01L29/42316

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/42316for field-effect transistors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Field effect transistors with dual field plates
- Patent number 12,255,235
- Issue date Mar 18, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical edge blocking (VEB) technique for increasing patterning pr...
- Patent number 12,249,541
- Issue date Mar 11, 2025
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bypassed gate transistors having improved stability
- Patent number 12,230,701
- Issue date Feb 18, 2025
- MACOM Technology Solutions Holdings, Inc.
- Khaled Fayed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and circuits with dual threshold voltage transistors and...
- Patent number 12,230,636
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chan-Hong Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,331
- Issue date Feb 11, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method of manufacturing the same
- Patent number 12,218,233
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Jaejoon Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,211,912
- Issue date Jan 28, 2025
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride device
- Patent number 12,191,302
- Issue date Jan 7, 2025
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manipulation zone for qubits in quantum dots
- Patent number 12,182,041
- Issue date Dec 31, 2024
- Rheinisch-Westfalische Technische Hochschule (RWTH) Aachen
- Matthias Künne
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
High electron mobility transistor device
- Patent number 12,176,403
- Issue date Dec 24, 2024
- United Microelectronics Corp.
- Chi-Hsiao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device employing two-dimensional electron gas with reduc...
- Patent number 12,176,431
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Wen Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,166,116
- Issue date Dec 10, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Hao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 12,166,119
- Issue date Dec 10, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,677
- Issue date Nov 12, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Yusuke Kanda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and fabrication method thereof
- Patent number 12,132,103
- Issue date Oct 29, 2024
- Vanguard International Semiconductor Corporation
- Yung-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor and method of manufacturing the same
- Patent number 12,125,907
- Issue date Oct 22, 2024
- Electronics and Telecommunications Research Institute
- Seong Hyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with multi-level self-aligned gate and source/drain term...
- Patent number 12,119,383
- Issue date Oct 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device with field effect gate
- Patent number 12,113,110
- Issue date Oct 8, 2024
- Samsung Electronics Co., Ltd.
- Woochul Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor device having a barrier layer wit...
- Patent number 12,100,756
- Issue date Sep 24, 2024
- United Microelectronics Corp.
- Hao-Ming Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,094,963
- Issue date Sep 17, 2024
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode semiconductor device and preparation method therefor
- Patent number 12,094,962
- Issue date Sep 17, 2024
- Sun Yat-Sen University
- Yang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Connection component for branching off a single electron motion
- Patent number 12,072,819
- Issue date Aug 27, 2024
- Rheinisch-Westfalische Technische Hochschule (RWTH) Aachen
- Matthias Künne
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multichannel transistor with improved gate conformation
- Patent number 12,068,216
- Issue date Aug 20, 2024
- National Technology & Engineering Solutions of Sandia, LLC
- Shahed Reza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,068,384
- Issue date Aug 20, 2024
- Mitsubishi Electric Corporation
- Yutaro Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a lateral transistor device and an inve...
- Patent number 12,068,379
- Issue date Aug 20, 2024
- Infineon Technologies Austria AG
- Oliver Häberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device with reduced area
- Patent number 12,052,859
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Meng-Sheng Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device
- Patent number 12,051,741
- Issue date Jul 30, 2024
- Sumitomo Electric Industries, Ltd.
- Kenya Nishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,046,647
- Issue date Jul 23, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a field effect transducer
- Patent number 12,031,939
- Issue date Jul 9, 2024
- Analog Devices, Inc.
- Mohamed Azize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having unit cell transistors with smoothed tu...
- Patent number 12,034,072
- Issue date Jul 9, 2024
- MACOM Technology Solutions Holdings, Inc.
- Yueying Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE...
- Publication number 20250072025
- Publication date Feb 27, 2025
- National Yang Ming Chiao Tung University
- Edward Yi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250072088
- Publication date Feb 27, 2025
- ROHM CO., LTD.
- Tomonori KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20250063755
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250056827
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Jaejoon OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056826
- Publication date Feb 13, 2025
- Kabushiki Kaisha Toshiba
- Yosuke KAJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...
- Publication number 20250048667
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Ujwal Radhakrishna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20250040221
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. KANTAROVSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR III-NITRIDE TRANSISTORS WITH CAP LAYERS
- Publication number 20250022928
- Publication date Jan 16, 2025
- Finwave Semiconductor, Inc.
- Hal Emmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022933
- Publication date Jan 16, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko KAWASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20250015174
- Publication date Jan 9, 2025
- Vanguard International Semiconductor Corporation
- Yung-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250015136
- Publication date Jan 9, 2025
- ROHM CO., LTD.
- Ryoichi MAKINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER AMPLIFIER SEMICONDUCTOR DEVICE
- Publication number 20250015768
- Publication date Jan 9, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Akihiko NISHIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240421220
- Publication date Dec 19, 2024
- ROHM CO., LTD.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Peak Reduction in Semiconductor Devices with Metal Corner Rou...
- Publication number 20240413218
- Publication date Dec 12, 2024
- Wolfspeed, Inc.
- Olof Tornblad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240405117
- Publication date Dec 5, 2024
- ROHM CO., LTD.
- Hirotaka OTAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
- Publication number 20240379835
- Publication date Nov 14, 2024
- ROHM CO., LTD.
- Isao TAKOBE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUASI FIELD-PLATE STRUCTURE FOR SEMICONDUCTOR DEVICES
- Publication number 20240363697
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-An Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH RECESSED OHMIC CONTACTS AND MET...
- Publication number 20240363746
- Publication date Oct 31, 2024
- SWEGAN AB
- Jr-Tai CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE WITH REDUCED AREA
- Publication number 20240357804
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MENG-SHENG CHANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240339966
- Publication date Oct 10, 2024
- Sumitomo Electric Industries, Ltd.
- Ken KIKUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICE HAVING AN IMPROVED GATE STRUCTURE AND MANUFACTURING PRO...
- Publication number 20240332413
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A FIELD EFFECT TRANSDUCER
- Publication number 20240328994
- Publication date Oct 3, 2024
- Analog Devices, Inc.
- Mohamed AZIZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH CURRENT AND FIELD-MANAGED TRANSISTOR
- Publication number 20240332397
- Publication date Oct 3, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHANNEL HIGH ELECTRON MOBILITY TRANSISTOR WITH DOPED GATE FINS
- Publication number 20240332409
- Publication date Oct 3, 2024
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240332372
- Publication date Oct 3, 2024
- Panasonic Holdings Corporation
- Naohiro TSURUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND ELECTRONIC DEVICE
- Publication number 20240313069
- Publication date Sep 19, 2024
- Huawei Technologies Co., Ltd
- Lingcong LE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF HETEROJUNCTION INTEGRATED DEVICE AND METHOD FOR MANUFA...
- Publication number 20240313102
- Publication date Sep 19, 2024
- STMicroelectronics International N.V.
- Cristina MICCOLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240304683
- Publication date Sep 12, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Anbang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICE HAVING A REDUCED ON-RESISTANCE AND MANUFACTURING PROCES...
- Publication number 20240304711
- Publication date Sep 12, 2024
- STMicroelectronics International N.V.
- Cristina TRINGALI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING HIGH ELECTRON MOBILITY TRANSISTORS WITH CONTROLL...
- Publication number 20240304678
- Publication date Sep 12, 2024
- Woflspeed, Inc.
- Won Sang Lee
- H01 - BASIC ELECTRIC ELEMENTS

for field-effect transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Field effect transistors with dual field plates

Vertical edge blocking (VEB) technique for increasing patterning pr...

Bypassed gate transistors having improved stability

Apparatus and circuits with dual threshold voltage transistors and...

Semiconductor device

High electron mobility transistor and method of manufacturing the same

Semiconductor device and fabrication method thereof

III-nitride device

Manipulation zone for qubits in quantum dots

High electron mobility transistor device

Electronic device employing two-dimensional electron gas with reduc...

Semiconductor device and fabrication method thereof

Gallium nitride transistor with a doped region

Semiconductor device

High electron mobility transistor and fabrication method thereof

Semiconductor and method of manufacturing the same

Transistor with multi-level self-aligned gate and source/drain term...

Nitride semiconductor device with field effect gate

High electron mobility transistor device having a barrier layer wit...

Nitride semiconductor device

Enhancement-mode semiconductor device and preparation method therefor

Connection component for branching off a single electron motion

Multichannel transistor with improved gate conformation

Semiconductor device

Semiconductor device having a lateral transistor device and an inve...

Non-volatile memory device with reduced area

Semiconductor device

Semiconductor device and fabrication method thereof

Method of manufacturing a field effect transducer

Semiconductor devices having unit cell transistors with smoothed tu...

Patents Applicationslast 30 patents

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE...

NITRIDE SEMICONDUCTOR DEVICE

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...

HIGH-ELECTRON-MOBILITY TRANSISTOR

CONTACT STRUCTURE FOR III-NITRIDE TRANSISTORS WITH CAP LAYERS

SEMICONDUCTOR DEVICE

METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR

NITRIDE SEMICONDUCTOR DEVICE

POWER AMPLIFIER SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

Field Peak Reduction in Semiconductor Devices with Metal Corner Rou...

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

QUASI FIELD-PLATE STRUCTURE FOR SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE STRUCTURE WITH RECESSED OHMIC CONTACTS AND MET...

NON-VOLATILE MEMORY DEVICE WITH REDUCED AREA

SEMICONDUCTOR DEVICE

HEMT DEVICE HAVING AN IMPROVED GATE STRUCTURE AND MANUFACTURING PRO...

METHOD OF MANUFACTURING A FIELD EFFECT TRANSDUCER

HIGH CURRENT AND FIELD-MANAGED TRANSISTOR

MULTI-CHANNEL HIGH ELECTRON MOBILITY TRANSISTOR WITH DOPED GATE FINS

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR COMPONENT AND ELECTRONIC DEVICE

NORMALLY-OFF HETEROJUNCTION INTEGRATED DEVICE AND METHOD FOR MANUFA...

SEMICONDUCTOR DEVICE

HEMT DEVICE HAVING A REDUCED ON-RESISTANCE AND MANUFACTURING PROCES...

METHODS OF FORMING HIGH ELECTRON MOBILITY TRANSISTORS WITH CONTROLL...