for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness

Industry

CPC
H01L29/4175

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/4175for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness

Industries

Patents Grantslast 30 patents

Information Patent Grant
Silicide-sandwiched source/drain region and method of fabricating same
- Patent number 11,967,621
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor with unified transistor structure and voltage regulat...
- Patent number 11,955,544
- Issue date Apr 9, 2024
- Rohm Co., Ltd.
- Kentaro Nasu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layout techniques and optimization for power transistors
- Patent number 11,929,408
- Issue date Mar 12, 2024
- MACOM Technology Solutions Holdings, Inc.
- Shamit Som
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET devices with a backside power rail and a backside self-align...
- Patent number 11,901,456
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shi Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,901,433
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jheng-Sheng You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Architecture design and process for manufacturing monolithically in...
- Patent number 11,901,360
- Issue date Feb 13, 2024
- Tokyo Electron Limited
- Lars Liebmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-bridge circuit using monolithic flip-chip GaN power devices
- Patent number 11,888,332
- Issue date Jan 30, 2024
- NAVITAS SEMICONDUCTOR LIMITED
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alignment-tolerant gallium oxide device
- Patent number 11,876,115
- Issue date Jan 16, 2024
- United States of America as represented by the Secretary of the Air Force
- Eric Heller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked field effect transistor with wrap-around contacts
- Patent number 11,869,893
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pulsed level shift and inverter circuits for GaN devices
- Patent number 11,862,996
- Issue date Jan 2, 2024
- NAVITAS SEMICONDUCTOR LIMITED
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power transistors
- Patent number 11,862,536
- Issue date Jan 2, 2024
- MACOM Technology Solutions Holdings, Inc.
- Aram Mkhitarian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact architecture for capacitance reduction and satisfactory con...
- Patent number 11,824,097
- Issue date Nov 21, 2023
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having reduced capacitance between source and...
- Patent number 11,817,494
- Issue date Nov 14, 2023
- ANCORA SEMICONDUCTORS INC.
- Li-Fan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods for layout-dependent voltage handling improveme...
- Patent number 11,817,456
- Issue date Nov 14, 2023
- Skyworks Solutions, Inc.
- Guillaume Alexandre Blin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor, method of manufacturing the same, and radi...
- Patent number 11,810,861
- Issue date Nov 7, 2023
- Sony Group Corporation
- Naoki Saka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside contact with air spacer
- Patent number 11,798,996
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Ming Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with backside via and methods thereof
- Patent number 11,791,387
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and fabrication method therefor
- Patent number 11,777,024
- Issue date Oct 3, 2023
- Rohm Co., Ltd.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral transistor with extended source finger contact
- Patent number 11,769,807
- Issue date Sep 26, 2023
- Semiconductor Components Industries, LLC
- Woochul Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-bridge circuit using separately packaged GaN power devices
- Patent number 11,770,010
- Issue date Sep 26, 2023
- NAVITAS SEMICONDUCTOR LIMITED
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having contact plugs with narrower and wider portions
- Patent number 11,764,274
- Issue date Sep 19, 2023
- Winbond Electronics Corp.
- Cheng-Hong Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source-channel junction for III-V metal-oxide-semiconductor field e...
- Patent number 11,756,998
- Issue date Sep 12, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain and/or gate interconnect and finger structure
- Patent number 11,757,013
- Issue date Sep 12, 2023
- Wolfspeed, Inc.
- Frank Trang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-bridge circuit using flip-chip GaN power devices
- Patent number 11,757,290
- Issue date Sep 12, 2023
- NAVITAS SEMICONDUCTOR LIMITED
- Daniel M. Kinzer
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
LDMOS transistor and method for manufacturing the same
- Patent number 11,757,035
- Issue date Sep 12, 2023
- HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Bing Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, integrated circuit component and manufacturin...
- Patent number 11,749,729
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Fa Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated chip having a buried power rail
- Patent number 11,742,292
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Marcus Johannes Henricus Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap structure coupled to source to reduce saturation current in HEM...
- Patent number 11,742,419
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices with an engineered substrate
- Patent number 11,735,460
- Issue date Aug 22, 2023
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source contact formation of MOSFET with gate shield buffer for pitc...
- Patent number 11,735,656
- Issue date Aug 22, 2023
- Silanna Asia Pte Ltd
- Touhidur Rahman
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER TRANSISTOR
- Publication number 20240136433
- Publication date Apr 25, 2024
- STMicroelectronics (Rousset) SAS
- Loic BOURGUINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-TERMINAL BIDIRECTIONAL ENHANCEMENT MODE GaN SWITCH
- Publication number 20240136408
- Publication date Apr 25, 2024
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR STRUCTURES AND RESULTING SEMICONDU...
- Publication number 20240128336
- Publication date Apr 18, 2024
- Wolfspeed, Inc.
- Christer Hallin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF Power Transistor Having Off-Axis Layout
- Publication number 20240128368
- Publication date Apr 18, 2024
- Microwave Technology Inc.
- Howard J. Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR DEVICES AND INTEGRATION METHODS
- Publication number 20240128374
- Publication date Apr 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP TRANSISTOR LAYOUT WITH UNEQUAL GATE ELECTRODE FINGER W...
- Publication number 20240113168
- Publication date Apr 4, 2024
- Skyworks Solutions, Inc.
- Guillaume Alexandre BLIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP TRANSISTOR LAYOUT WITH FOLDED GATE
- Publication number 20240113180
- Publication date Apr 4, 2024
- Skyworks Solutions, Inc.
- Guillaume Alexandre BLIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRA...
- Publication number 20240113219
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES
- Publication number 20240113169
- Publication date Apr 4, 2024
- Skyworks Solutions, Inc.
- Guillaume Alexandre BLIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE
- Publication number 20240113051
- Publication date Apr 4, 2024
- Skyworks Solutions, Inc.
- Guillaume Alexandre Blin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED THROUGH WAFER VIAS OU...
- Publication number 20240113170
- Publication date Apr 4, 2024
- Skyworks Solutions, Inc.
- Guillaume Alexandre BLIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Alignment-Tolerant Gallium Oxide Device
- Publication number 20240105781
- Publication date Mar 28, 2024
- Government of the United States, as represented by the Secretary of the Air F...
- Eric Heller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME
- Publication number 20240096726
- Publication date Mar 21, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Haohua MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240096735
- Publication date Mar 21, 2024
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Rai SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240079463
- Publication date Mar 7, 2024
- MURATA MANUFACTURING CO., LTD.
- Kazuhiko SHIBATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA ALTERNATE NET SPACING
- Publication number 20240055494
- Publication date Feb 15, 2024
- QUALCOMM Incorporated
- Thomas Hua-Min WILLIAMS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING TH...
- Publication number 20240047451
- Publication date Feb 8, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Hui YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT ARCHITECTURE FOR CAPACITANCE REDUCTION AND SATISFACTORY CON...
- Publication number 20240038857
- Publication date Feb 1, 2024
- Intel Corporation
- Rishabh MEHANDRU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE-BASED SEMICONDUCTOR DEVICE
- Publication number 20240030334
- Publication date Jan 25, 2024
- INFINEON TECHNOLOGIES AG
- Helmut Brech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240030156
- Publication date Jan 25, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Chang An LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240030338
- Publication date Jan 25, 2024
- Ancora Semiconductors Inc.
- Li-Fan LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTIVE INSULATOR FOR HFET DEVICES
- Publication number 20240030337
- Publication date Jan 25, 2024
- Power Integrations, Inc.
- Alexey Kudymov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A DIE SEAL RING INCLUDING A TWO DIMENSIONAL ELECTRON GAS REGION
- Publication number 20240014308
- Publication date Jan 11, 2024
- Power Integrations, Inc.
- Kuo-Chang Robert YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DIE WITH PRIMARY AND ANCILLARY TRANSISTOR ELEMENTS
- Publication number 20230411243
- Publication date Dec 21, 2023
- NXP USA, Inc.
- Humayun Kabir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
- Publication number 20230411508
- Publication date Dec 21, 2023
- ROHM CO., LTD.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR WITH MULTIPLE DRAIN VIAS
- Publication number 20230402515
- Publication date Dec 14, 2023
- PANJIT INTERNATIONAL INC.
- Chung-Hsiung Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH BACKSIDE VIA AND METHODS THEREOF
- Publication number 20230387226
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPONENT INCLUDING THE SAME
- Publication number 20230386978
- Publication date Nov 30, 2023
- Panasonic Intellectual Property Management Co., Ltd.
- Masayuki KURODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT WITH AIR SPACER
- Publication number 20230369419
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Ming Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
- Publication number 20230361170
- Publication date Nov 9, 2023
- MURATA MANUFACTURING CO., LTD.
- Fuminori MORISAWA
- H01 - BASIC ELECTRIC ELEMENTS

for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicide-sandwiched source/drain region and method of fabricating same

Semiconductor with unified transistor structure and voltage regulat...

Layout techniques and optimization for power transistors

FinFET devices with a backside power rail and a backside self-align...

Semiconductor device

Architecture design and process for manufacturing monolithically in...

Half-bridge circuit using monolithic flip-chip GaN power devices

Alignment-tolerant gallium oxide device

Stacked field effect transistor with wrap-around contacts

Pulsed level shift and inverter circuits for GaN devices

High power transistors

Contact architecture for capacitance reduction and satisfactory con...

Semiconductor device having reduced capacitance between source and...

Devices and methods for layout-dependent voltage handling improveme...

Field-effect transistor, method of manufacturing the same, and radi...

Backside contact with air spacer

Semiconductor devices with backside via and methods thereof

Nitride semiconductor device and fabrication method therefor

Lateral transistor with extended source finger contact

Half-bridge circuit using separately packaged GaN power devices

Memory device having contact plugs with narrower and wider portions

Source-channel junction for III-V metal-oxide-semiconductor field e...

Drain and/or gate interconnect and finger structure

Half-bridge circuit using flip-chip GaN power devices

LDMOS transistor and method for manufacturing the same

Semiconductor device, integrated circuit component and manufacturin...

Integrated chip having a buried power rail

Cap structure coupled to source to reduce saturation current in HEM...

Integrated circuit devices with an engineered substrate

Source contact formation of MOSFET with gate shield buffer for pitc...

Patents Applicationslast 30 patents

POWER TRANSISTOR

THREE-TERMINAL BIDIRECTIONAL ENHANCEMENT MODE GaN SWITCH

METHODS OF FORMING SEMICONDUCTOR STRUCTURES AND RESULTING SEMICONDU...

RF Power Transistor Having Off-Axis Layout

METAL OXIDE SEMICONDUCTOR DEVICES AND INTEGRATION METHODS

WIDE BANDGAP TRANSISTOR LAYOUT WITH UNEQUAL GATE ELECTRODE FINGER W...

WIDE BANDGAP TRANSISTOR LAYOUT WITH FOLDED GATE

VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRA...

WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES

WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE

WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED THROUGH WAFER VIAS OU...

Alignment-Tolerant Gallium Oxide Device

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

VIA ALTERNATE NET SPACING

NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING TH...

CONTACT ARCHITECTURE FOR CAPACITANCE REDUCTION AND SATISFACTORY CON...

GROUP III NITRIDE-BASED SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

PROTECTIVE INSULATOR FOR HFET DEVICES

A DIE SEAL RING INCLUDING A TWO DIMENSIONAL ELECTRON GAS REGION

TRANSISTOR DIE WITH PRIMARY AND ANCILLARY TRANSISTOR ELEMENTS

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

METAL OXIDE SEMICONDUCTOR WITH MULTIPLE DRAIN VIAS

SEMICONDUCTOR DEVICES WITH BACKSIDE VIA AND METHODS THEREOF

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPONENT INCLUDING THE SAME

BACKSIDE CONTACT WITH AIR SPACER

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE