Gate electrodes for field effect devices

Industry

CPC
H01L29/42312

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/42312Gate electrodes for field effect devices

Industries

Patents Grantslast 30 patents

Information Patent Grant
HEMT with stair-like compound layer at drain
- Patent number 12,224,333
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor and method of manufacturing the same
- Patent number 12,125,907
- Issue date Oct 22, 2024
- Electronics and Telecommunications Research Institute
- Seong Hyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GaN) based transistor with multiple p-GaN blocks
- Patent number 12,046,666
- Issue date Jul 23, 2024
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with overlapping gates
- Patent number 11,942,516
- Issue date Mar 26, 2024
- Intel Corporation
- Nicole K. Thomas
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Metal oxide semiconductor having epitaxial source drain regions and...
- Patent number 11,901,454
- Issue date Feb 13, 2024
- Sony Group Corporation
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power switch circuit, IC structure of power switch circuit, and met...
- Patent number 11,855,619
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Tzung-Yo Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for induced quantum dots for material characterization, qubi...
- Patent number 11,810,968
- Issue date Nov 7, 2023
- Government of the United States, as represented by the Director, National Sec...
- Charles George Tahan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetoelectric majority gate device
- Patent number 11,764,786
- Issue date Sep 19, 2023
- Board of Regents of the University of Nebraska
- Nishtha Sharma Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method of manufacturing the same
- Patent number 11,757,029
- Issue date Sep 12, 2023
- Samsung Electronics Co., Ltd.
- Jaejoon Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoelectric XNOR logic gate device
- Patent number 11,757,449
- Issue date Sep 12, 2023
- BOARD OF REGENT'S OF THE UNIVERSITY OF NEBRASKA
- Nishtha Sharma Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate walls for quantum dot devices
- Patent number 11,749,721
- Issue date Sep 5, 2023
- Intel Corporation
- Hubert C. George
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High efficient micro devices
- Patent number 11,721,784
- Issue date Aug 8, 2023
- VueReal Inc.
- Gholamreza Chaji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,699,764
- Issue date Jul 11, 2023
- Fuji Electric Co., Ltd.
- Kazumi Takagiwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-Nitride transistor with a cap layer for RF operation
- Patent number 11,695,052
- Issue date Jul 4, 2023
- Finwave Semiconductor, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoelectric inverter
- Patent number 11,658,663
- Issue date May 23, 2023
- Board of Regents of the University of Nebraska
- Nishtha Sharma Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High efficient microdevices
- Patent number 11,600,743
- Issue date Mar 7, 2023
- VueReal Inc.
- Gholamreza Chaji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-compact, passive, wireless sensor using quantum capacitance e...
- Patent number 11,561,192
- Issue date Jan 24, 2023
- Regents of The University of Minnesota
- Steven J. Koester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D stackable bidirectional access device for memory array
- Patent number 11,562,931
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Fabio Carta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for induced quantum dots for material characterization, qubi...
- Patent number 11,444,184
- Issue date Sep 13, 2022
- U.S. Government as represented by the Director, National Security Agency
- Charles George Tahan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Metal oxide semiconductor having epitaxial source drain regions and...
- Patent number 11,404,573
- Issue date Aug 2, 2022
- Sony Group Corporation
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,398,557
- Issue date Jul 26, 2022
- Vanguard International Semiconductor Corporation
- Yi-Ching Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing an electronic component with double quantum dots
- Patent number 11,398,593
- Issue date Jul 26, 2022
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Sylvain Barraud
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Circuits based on magnetoelectric transistor devices
- Patent number 11,349,480
- Issue date May 31, 2022
- Board of Regents, The University of Texas System
- Nishtha Sharma Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with overlapping gates
- Patent number 11,335,778
- Issue date May 17, 2022
- Intel Corporation
- Nicole K. Thomas
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Self-aligned contact and manufacturing method thereof
- Patent number 11,335,562
- Issue date May 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bang-Tai Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method of manufacturing the same
- Patent number 11,335,802
- Issue date May 17, 2022
- Samsung Electronics Co., Ltd.
- Jaejoon Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum device with spin qubits coupled in modulatable manner
- Patent number 11,329,145
- Issue date May 10, 2022
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Louis Hutin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Output circuit
- Patent number 11,295,987
- Issue date Apr 5, 2022
- SOCIONEXT INC.
- Isaya Sobue
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunneling field-effect transistor and method for manufacturing tunn...
- Patent number 11,152,500
- Issue date Oct 19, 2021
- Huawei Technologies Co., Ltd.
- Jing Zhao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gallium nitride (GaN) based transistor with multiple p-GaN blocks
- Patent number 11,049,960
- Issue date Jun 29, 2021
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH EFFICENT MICRO DEVICES
- Publication number 20240379897
- Publication date Nov 14, 2024
- VueReal Inc.
- Gholamreza Chaji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW PRESSURE PLASMA ETCH PROCESS FOR PREFERENTIAL GENERATION OF OXI...
- Publication number 20240355629
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Tzu-Ging Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXCHANGE ELECTRODES FOR NETWORK OF QUANTUM DOTS
- Publication number 20240222474
- Publication date Jul 4, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Heimanu NIEBOJEWSKI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240204085
- Publication date Jun 20, 2024
- UNITED MICROELECTRONICS CORP.
- Chih-Wei Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...
- Publication number 20240204102
- Publication date Jun 20, 2024
- SONY GROUP CORPORATION
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240128326
- Publication date Apr 18, 2024
- Sumitomo Electric Industries, Ltd.
- Takahide HIRASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SWITCH CIRCUIT, IC STRUCTURE OF POWER SWITCH CIRCUIT, AND MET...
- Publication number 20240056074
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- TZUNG-YO HUNG
- B82 - NANO-TECHNOLOGY
Information Patent Application
HEMT WITH STAIR-LIKE COMPOUND LAYER AT DRAIN
- Publication number 20230387250
- Publication date Nov 30, 2023
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH EFFICENT MICRO DEVICES
- Publication number 20230361239
- Publication date Nov 9, 2023
- VueReal Inc.
- Gholamreza Chaji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-COMPACT, PASSIVE, WIRELESS SENSOR USING QUANTUM CAPACITANCE E...
- Publication number 20230341345
- Publication date Oct 26, 2023
- Regents of the University of Minnesota
- Steven J. Koester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...
- Publication number 20230170398
- Publication date Jun 1, 2023
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230163213
- Publication date May 25, 2023
- Samsung Electronics Co., Ltd.
- SANGGIL LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...
- Publication number 20220352373
- Publication date Nov 3, 2022
- SONY GROUP CORPORATION
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH EFFICIENT MICRO DEVICES
- Publication number 20220328715
- Publication date Oct 13, 2022
- VueReal Inc.
- Gholamreza Chaji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETOELECTRIC XNOR LOGIC GATE DEVICE
- Publication number 20220294448
- Publication date Sep 15, 2022
- Board of Regents of the University of Nebraska
- Nishtha Sharma GAUL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETOELECTRIC MAJORITY GATE DEVICE
- Publication number 20220294449
- Publication date Sep 15, 2022
- Board of Regents of the University of Nebraska
- Nishtha Sharma GAUL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETOELECTRIC INVERTER
- Publication number 20220294450
- Publication date Sep 15, 2022
- Board of Regents of the University of Nebraska
- Nishtha Sharma GAUL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220285563
- Publication date Sep 8, 2022
- Fuji Electric Co., Ltd.
- Kazumi TAKAGIWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220238706
- Publication date Jul 28, 2022
- Samsung Electronics Co., Ltd.
- Jaejoon OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM DOT DEVICES WITH OVERLAPPING GATES
- Publication number 20220216305
- Publication date Jul 7, 2022
- Intel Corporation
- Nicole K. Thomas
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220093762
- Publication date Mar 24, 2022
- Mitsubishi Electric Corporation
- Hiroyuki OKAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220059662
- Publication date Feb 24, 2022
- Vanguard International Semiconductor Corporation
- Yi-Ching CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure and Method for Manufacturing the Same
- Publication number 20210399122
- Publication date Dec 23, 2021
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210336045
- Publication date Oct 28, 2021
- Samsung Electronics Co., Ltd.
- Jaejoon OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS
- Publication number 20210280702
- Publication date Sep 9, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Transistor With A Cap Layer For RF Operation
- Publication number 20210265477
- Publication date Aug 26, 2021
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SWITCH CIRCUIT, IC STRUCTURE OF POWER SWITCH CIRCUIT, AND MET...
- Publication number 20210218398
- Publication date Jul 15, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- TZUNG-YO HUNG
- B82 - NANO-TECHNOLOGY
Information Patent Application
ULTRA-COMPACT, PASSIVE, WIRELESS SENSOR USING QUANTUM CAPACITANCE E...
- Publication number 20210199614
- Publication date Jul 1, 2021
- Regents of the University of Minnesota
- Steven J. Koester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...
- Publication number 20210074858
- Publication date Mar 11, 2021
- Sony Corporation
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20200343354
- Publication date Oct 29, 2020
- Mitsubishi Electric Corporation
- Hiroyuki OKAZAKI
- H01 - BASIC ELECTRIC ELEMENTS

Gate electrodes for field effect devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

HEMT with stair-like compound layer at drain

Semiconductor and method of manufacturing the same

Gallium nitride (GaN) based transistor with multiple p-GaN blocks

Quantum dot devices with overlapping gates

Metal oxide semiconductor having epitaxial source drain regions and...

Power switch circuit, IC structure of power switch circuit, and met...

Method for induced quantum dots for material characterization, qubi...

Magnetoelectric majority gate device

High electron mobility transistor and method of manufacturing the same

Magnetoelectric XNOR logic gate device

Gate walls for quantum dot devices

High efficient micro devices

Semiconductor device and method of manufacturing the same

III-Nitride transistor with a cap layer for RF operation

Magnetoelectric inverter

High efficient microdevices

Ultra-compact, passive, wireless sensor using quantum capacitance e...

3D stackable bidirectional access device for memory array

System for induced quantum dots for material characterization, qubi...

Metal oxide semiconductor having epitaxial source drain regions and...

Semiconductor device

Method for producing an electronic component with double quantum dots

Circuits based on magnetoelectric transistor devices

Quantum dot devices with overlapping gates

Self-aligned contact and manufacturing method thereof

High electron mobility transistor and method of manufacturing the same

Quantum device with spin qubits coupled in modulatable manner

Output circuit

Tunneling field-effect transistor and method for manufacturing tunn...

Gallium nitride (GaN) based transistor with multiple p-GaN blocks

Patents Applicationslast 30 patents

HIGH EFFICENT MICRO DEVICES

LOW PRESSURE PLASMA ETCH PROCESS FOR PREFERENTIAL GENERATION OF OXI...

EXCHANGE ELECTRODES FOR NETWORK OF QUANTUM DOTS

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

POWER SWITCH CIRCUIT, IC STRUCTURE OF POWER SWITCH CIRCUIT, AND MET...

HEMT WITH STAIR-LIKE COMPOUND LAYER AT DRAIN

HIGH EFFICENT MICRO DEVICES

ULTRA-COMPACT, PASSIVE, WIRELESS SENSOR USING QUANTUM CAPACITANCE E...

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...

SEMICONDUCTOR DEVICE

METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...

HIGH EFFICIENT MICRO DEVICES

MAGNETOELECTRIC XNOR LOGIC GATE DEVICE

MAGNETOELECTRIC MAJORITY GATE DEVICE

MAGNETOELECTRIC INVERTER

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

QUANTUM DOT DEVICES WITH OVERLAPPING GATES

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

Semiconductor Structure and Method for Manufacturing the Same

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS

III-Nitride Transistor With A Cap Layer For RF Operation

POWER SWITCH CIRCUIT, IC STRUCTURE OF POWER SWITCH CIRCUIT, AND MET...

ULTRA-COMPACT, PASSIVE, WIRELESS SENSOR USING QUANTUM CAPACITANCE E...

METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE