Heterojunctions

Industry

CPC
Y10S148/072

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/072Heterojunctions

Industries

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit capable of low-noise and high-power microwave op...
- Patent number 6,215,136
- Issue date Apr 10, 2001
- Texas Instruments Incorporated
- Hua Quen Tserng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of fabricating photodiode integrated with MOS device
- Patent number 6,033,232
- Issue date Mar 7, 2000
- Powerchip Semiconductor Corp.
- James H. C. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microwave heterojunction bipolar transistors with emitters designed...
- Patent number 6,025,615
- Issue date Feb 15, 2000
- Texas Instruments Incorporated
- William Uei-Chung Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned base ohmic metal for an HBT device cross-reference to...
- Patent number 5,994,194
- Issue date Nov 30, 1999
- TRW Inc.
- Michael D. Lammert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making heterojunction bipolar structure having air and im...
- Patent number 5,943,577
- Issue date Aug 24, 1999
- NEC Corporation
- Walter Contrata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making integrated heterojunction bipolar/high electron m...
- Patent number 5,920,773
- Issue date Jul 6, 1999
- Hughes Electronics Corporation
- Madjid Hafizi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making light-emitting diode having improved moisture res...
- Patent number 5,888,843
- Issue date Mar 30, 1999
- Hitachi Cable, Ltd.
- Tooru Kurihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of InGaSa p-n Junction by control of growth temperature
- Patent number 5,858,818
- Issue date Jan 12, 1999
- Electronics and Telecommunications Research Institute
- Jeong-Rae Ro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing Si-Ge base heterojunction bipolar device
- Patent number 5,846,867
- Issue date Dec 8, 1998
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating high .beta.HBT devices
- Patent number 5,804,487
- Issue date Sep 8, 1998
- TRW Inc.
- Michael D. Lammert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing semiconductor laser diode
- Patent number 5,801,071
- Issue date Sep 1, 1998
- Ricoh Company, Ltd.
- Takashi Takahashi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for reducing extrinsic base-collector capacitance
- Patent number 5,789,301
- Issue date Aug 4, 1998
- TriQuint Semiconductor, Inc.
- Darrell Glenn Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of self-aligning an emitter contact in a planar heterojuncti...
- Patent number 5,698,460
- Issue date Dec 16, 1997
- Texas Instruments Incorporated
- Jau-Yuann Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semimetal-semiconductor heterostructures and multilayers
- Patent number 5,686,351
- Issue date Nov 11, 1997
- The University of Houston
- Terry D. Golding
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making integrated circuit capable of low-noise and high-p...
- Patent number 5,681,766
- Issue date Oct 28, 1997
- Texas Instruments Incorporated
- Hua Quen Tserng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surfactant-enhanced epitaxy
- Patent number 5,628,834
- Issue date May 13, 1997
- International Business Machines Corporation
- Matthew W. Copel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor laser diode apparatus and method of producing the same
- Patent number 5,577,062
- Issue date Nov 19, 1996
- Ricoh Company, Ltd.
- Takashi Takahashi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing semiconductor layers by bonding without def...
- Patent number 5,573,960
- Issue date Nov 12, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Shigekazu Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor having a self emitter contact aligned
- Patent number 5,548,141
- Issue date Aug 20, 1996
- Texas Instruments Incorporated
- Francis J. Morris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing extrinsic base-collector capacitance
- Patent number 5,525,818
- Issue date Jun 11, 1996
- Texas Instruments Incorporated
- Darrell G. Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semimetal-semiconductor heterostructures and multilayers
- Patent number 5,449,561
- Issue date Sep 12, 1995
- University of Houston
- Terry D. Golding
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing bipolar transistor having reduced base-collect...
- Patent number 5,445,976
- Issue date Aug 29, 1995
- Texas Instruments Incorporated
- Timothy S. Henderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-quantum-well semiconductor structures with selective elect...
- Patent number 5,435,856
- Issue date Jul 25, 1995
- Hughes Aircraft Company
- Irving D. Rouse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of self aligning an emitter contact in a heterojunction bipo...
- Patent number 5,436,181
- Issue date Jul 25, 1995
- Texas Instruments Incorporated
- Francis J. Morris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making collector up bipolar transistors having reducing...
- Patent number 5,434,091
- Issue date Jul 18, 1995
- Texas Instruments Incorporated
- Darrell Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an heterojunction bipolar transistor
- Patent number 5,429,957
- Issue date Jul 4, 1995
- Matsushita Electric Industrial Co., Ltd.
- Toshinobu Matsuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a complementary heterojunction FET
- Patent number 5,427,965
- Issue date Jun 27, 1995
- Motorola, Inc.
- Saied N. Tehrani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of integrating heterojunction bipolar transistors with heter...
- Patent number 5,422,501
- Issue date Jun 6, 1995
- Texas Instruments Incorporated
- Burhan Bayraktaroglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiplanar heterojunction bipolar transistor
- Patent number 5,420,052
- Issue date May 30, 1995
- Texas Instruments Incorporated
- Francis J. Morris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a high performance MESFET with multiple quantum wells
- Patent number 5,420,059
- Issue date May 30, 1995
- International Business Machines Corporation
- S. Noor Mohammad
- H01 - BASIC ELECTRIC ELEMENTS

Heterojunctions

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Integrated circuit capable of low-noise and high-power microwave op...

Process of fabricating photodiode integrated with MOS device

Microwave heterojunction bipolar transistors with emitters designed...

Self-aligned base ohmic metal for an HBT device cross-reference to...

Method of making heterojunction bipolar structure having air and im...

Method for making integrated heterojunction bipolar/high electron m...

Method for making light-emitting diode having improved moisture res...

Formation of InGaSa p-n Junction by control of growth temperature

Method of producing Si-Ge base heterojunction bipolar device

Method of fabricating high .beta.HBT devices

Method for producing semiconductor laser diode

Method for reducing extrinsic base-collector capacitance

Method of self-aligning an emitter contact in a planar heterojuncti...

Semimetal-semiconductor heterostructures and multilayers

Method of making integrated circuit capable of low-noise and high-p...

Surfactant-enhanced epitaxy

Semiconductor laser diode apparatus and method of producing the same

Method of manufacturing semiconductor layers by bonding without def...

Bipolar transistor having a self emitter contact aligned

Reducing extrinsic base-collector capacitance

Semimetal-semiconductor heterostructures and multilayers

Method for producing bipolar transistor having reduced base-collect...

Multiple-quantum-well semiconductor structures with selective elect...

Method of self aligning an emitter contact in a heterojunction bipo...

Method for making collector up bipolar transistors having reducing...

Method of manufacturing an heterojunction bipolar transistor

Method of fabricating a complementary heterojunction FET

Method of integrating heterojunction bipolar transistors with heter...

Method of fabricating a semiplanar heterojunction bipolar transistor

Method of making a high performance MESFET with multiple quantum wells