in gas atmosphere or plasma

Industry

CPC
C30B33/12

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Current Industry

C30B33/12in gas atmosphere or plasma

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Epitaxial layers in source/drain contacts and methods of forming th...
- Patent number 12,369,386
- Issue date Jul 22, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ding-Kang Shih
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing SiC substrate
- Patent number 12,362,175
- Issue date Jul 15, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide powder, method for manufacturing silicon carbide in...
- Patent number 12,325,933
- Issue date Jun 10, 2025
- Senic Inc.
- Jong Hwi Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for low temperature selective epitaxy in a dee...
- Patent number 12,297,559
- Issue date May 13, 2025
- Applied Materials, Inc.
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depositing boron containing silicon germanium layers
- Patent number 12,266,524
- Issue date Apr 1, 2025
- ASM IP Holding B.V.
- Lucas Petersen Barbosa Lima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a SiC seed crystal for growth of a SiC ingot b...
- Patent number 12,247,319
- Issue date Mar 11, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Controlled surface chemistry for polytypic and microstructural sele...
- Patent number 12,173,428
- Issue date Dec 24, 2024
- Mainstream Engineering Corporation
- Jesse A. Johnson
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC wafer and manufacturing method for SiC wafer
- Patent number 12,139,813
- Issue date Nov 12, 2024
- Toyota Tsusho Corporation
- Masatake Nagaya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Electrostatic chucking process
- Patent number 12,100,609
- Issue date Sep 24, 2024
- Applied Materials, Inc.
- Sarah Michelle Bobek
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for depositing boron containing silicon germanium layers
- Patent number 11,946,157
- Issue date Apr 2, 2024
- ASM IP Holding B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal manufacturing method, SiC single crystal manufac...
- Patent number 11,932,967
- Issue date Mar 19, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a spiral spring
- Patent number 11,822,289
- Issue date Nov 21, 2023
- CSEM Centre Suisse d'Electronique et de Microtechnique S.A. Recherche et Deve...
- Michel Despont
- C30 - CRYSTAL GROWTH
Information Patent Grant
Body obtained by processing solid carbon-containing material and pr...
- Patent number 11,629,104
- Issue date Apr 18, 2023
- Sumitomo Electric Industries, Ltd.
- Yoshiki Nishibayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Body obtained by processing solid carbon-containing material, produ...
- Patent number 11,518,680
- Issue date Dec 6, 2022
- Sumitomo Electric Industries, Ltd.
- Yoshiki Nishibayashi
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Single crystalline diamond part production method for stand alone s...
- Patent number 11,512,409
- Issue date Nov 29, 2022
- Ecole Polytechnique Federale de Lausanne
- Niels Quack
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Epitaxial layers in source/drain contacts and methods of forming th...
- Patent number 11,410,890
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ding-Kang Shih
- C30 - CRYSTAL GROWTH
Information Patent Grant
Porous wire-in-tube structures
- Patent number 11,309,538
- Issue date Apr 19, 2022
- UNIVERSITY OF TEHRAN
- Mehrnoosh Sadeghipari
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gas storage system
- Patent number 11,171,345
- Issue date Nov 9, 2021
- Encite LLC
- Stephen Alan Marsh
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Grant
Single crystal synthetic diamond material via chemical vapour depos...
- Patent number 11,060,204
- Issue date Jul 13, 2021
- Element Six Technologies Limited
- Daniel James Twitchen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Underlying substrate including a seed crystal layer of a group 13 n...
- Patent number 10,947,638
- Issue date Mar 16, 2021
- NGK INSULATORS, LTD.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Magnetic resonance spectrometer
- Patent number 10,914,800
- Issue date Feb 9, 2021
- STC.UNM
- Victor Acosta
- G01 - MEASURING TESTING
Information Patent Grant
Optical quality diamond material
- Patent number 10,851,471
- Issue date Dec 1, 2020
- Element Six Technologies Limited
- Herman Philip Godfried
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Selective cyclic dry etching process of dielectric materials using...
- Patent number 10,720,334
- Issue date Jul 21, 2020
- ASM IP Holding B.V.
- Rene Henricus Jozef Vervuurt
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Surface treatment method for SiC substrate
- Patent number 10,665,465
- Issue date May 26, 2020
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device including semiconductor substrate containing gallium nitride...
- Patent number 10,526,727
- Issue date Jan 7, 2020
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Masaki Fujikane
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing electronic component for heterojunction pr...
- Patent number 10,522,648
- Issue date Dec 31, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Matthew Charles
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-aligned tunable metamaterials
- Patent number 10,501,867
- Issue date Dec 10, 2019
- Arturo A Ayon
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Etching method and plasma processing apparatus
- Patent number 10,438,774
- Issue date Oct 8, 2019
- Tokyo Electron Limited
- Hayato Hishinuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Etching method for SiC substrate and holding container
- Patent number 10,388,536
- Issue date Aug 20, 2019
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device including semiconductor substrate containing gallium nitride...
- Patent number 10,378,124
- Issue date Aug 13, 2019
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Masaki Fujikane
- E03 - WATER SUPPLY SEWERAGE

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS
- Publication number 20250157814
- Publication date May 15, 2025
- ASM IP HOLDING B.V.
- Lucas Petersen Barbosa Lima
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND STRUCTURE AND METHOD OF FORMING A DIAMOND STRUCTURE
- Publication number 20250140554
- Publication date May 1, 2025
- Advanced Diamond Holdings, LLC
- John P. Ciraldo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...
- Publication number 20250132155
- Publication date Apr 24, 2025
- Applied Materials, Inc.
- Chen-Ying WU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER
- Publication number 20250112042
- Publication date Apr 3, 2025
- ASM IP HOLDING B.V.
- Gregory Deye
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE HETEROJUNCTION NORMALLY-OFF HIGH-ELECTRON-MOBILITY...
- Publication number 20250092567
- Publication date Mar 20, 2025
- Wenzhou University
- Wensheng Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...
- Publication number 20250087485
- Publication date Mar 13, 2025
- Applied Materials, Inc.
- Chen-Ying WU
- C30 - CRYSTAL GROWTH
Information Patent Application
CONTROLLED SURFACE CHEMISTRY FOR POLYTYPIC AND MICROSTRUCTURAL SELE...
- Publication number 20250051964
- Publication date Feb 13, 2025
- Mainstream Engineering Corporation
- Jesse A. Johnson
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20250046656
- Publication date Feb 6, 2025
- Socpra Sciences et Genie s.e.c.
- Thierno Mamoudou DIALLO
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND PRO...
- Publication number 20240426024
- Publication date Dec 26, 2024
- Sumitomo Electric Industries, Ltd.
- Kazuki NODA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing a Bulk SiC Single Crystal with Improved Qualit...
- Publication number 20240392471
- Publication date Nov 28, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR SCALABLE FABRICATION OF ULTRAFLAT POLYCRYSTALLINE DIAMON...
- Publication number 20240384433
- Publication date Nov 21, 2024
- The University of Hong Kong
- Zhiqin CHU
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM AND METHOD FOR SELECTIVE ETCHING OF AMORPHOUS SILICON OVER E...
- Publication number 20240363374
- Publication date Oct 31, 2024
- Applied Materials, Inc.
- Mukhles SOWWAN
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD OF FORMING AN EPITAXIAL LAYER
- Publication number 20240203730
- Publication date Jun 20, 2024
- ASM IP HOLDING B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Application
CARBON-CONTAINING CAP LAYER FOR DOPED SEMICONDUCTOR EPITAXIAL LAYER
- Publication number 20240145550
- Publication date May 2, 2024
- Applied Materials, Inc.
- Jason JEWELL
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CONTROLLED SURFACE CHEMISTRY FOR POLYTYPIC AND MICROSTRUCTURAL SELE...
- Publication number 20240133077
- Publication date Apr 25, 2024
- Mainstream Engineering Corporation
- Jesse A. Johnson
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Photoelectrode and Method for Manufacturing Same
- Publication number 20230392269
- Publication date Dec 7, 2023
- Nippon Telegraph and Telephone Corporation
- Yuya Uzumaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS OF FORMING SUPERLATTICE STRUCTURES USING NANOPARTICLES
- Publication number 20230352300
- Publication date Nov 2, 2023
- ASM IP HOLDING, B.V.
- Jan Deckers
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON SINGLE-CRYSTAL SUBSTRATE AND SILIC...
- Publication number 20230212782
- Publication date Jul 6, 2023
- Shin-Etsu Handotai Co., Ltd.
- Weifeng QU
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide powder, method for manufacturing silicon carbide in...
- Publication number 20230203707
- Publication date Jun 29, 2023
- Senic Inc.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
A DIAMOND SCANNING ELEMENT, ESPECIALLY FOR IMAGING APPLICATION, AND...
- Publication number 20230113008
- Publication date Apr 13, 2023
- UNIVERSITAT BASEL
- Brendan SHIELDS
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE AND METHOD FOR ITS MANUFACTURING
- Publication number 20230061777
- Publication date Mar 2, 2023
- Fraunhofer Gesellschaft zur Forderung der angewandten Forschung e.V.
- Felix Hahl
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Laser Activated Luminescence System
- Publication number 20230062860
- Publication date Mar 2, 2023
- Board of Trustees of Michigan State University
- Marcos DANTUS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD AND APPARATUS FOR LOW TEMPERATURE SELECTIVE EPITAXY IN A DEE...
- Publication number 20230036426
- Publication date Feb 2, 2023
- Applied Materials, Inc.
- Abhishek DUBE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SIC SINGLE CRYSTAL MANUFACTURING METHOD, SIC SINGLE CRYSTAL MANUFAC...
- Publication number 20230024750
- Publication date Jan 26, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUM LAYERS
- Publication number 20220364262
- Publication date Nov 17, 2022
- ASM IP HOLDING B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial Layers In Source/Drain Contacts And Methods Of Forming Th...
- Publication number 20220359310
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang Shih
- C30 - CRYSTAL GROWTH
Information Patent Application
MICRO AND NANO STRUCTURING OF A DIAMOND SUBSTRATE
- Publication number 20220350249
- Publication date Nov 3, 2022
- Universitat Des Saarlandes
- Mariusz RADTKE
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, SiC INGOT PRODUCED...
- Publication number 20220333270
- Publication date Oct 20, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
NON-CONTACT POLISHING OF A CRYSTALLINE LAYER OR SUBSTRATE BY ION BE...
- Publication number 20220275533
- Publication date Sep 1, 2022
- ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
- Niels QUACK
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND DEVICE FOR MANUFACTURING SiC SUBSTRATE, AND METHOD FOR R...
- Publication number 20220181149
- Publication date Jun 9, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH

in gas atmosphere or plasma

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Epitaxial layers in source/drain contacts and methods of forming th...

Method for manufacturing SiC substrate

Silicon carbide powder, method for manufacturing silicon carbide in...

Method and apparatus for low temperature selective epitaxy in a dee...

Method for depositing boron containing silicon germanium layers

Method for producing a SiC seed crystal for growth of a SiC ingot b...

Controlled surface chemistry for polytypic and microstructural sele...

SiC wafer and manufacturing method for SiC wafer

Electrostatic chucking process

Method for depositing boron containing silicon germanium layers

SiC single crystal manufacturing method, SiC single crystal manufac...

Method for manufacturing a spiral spring

Body obtained by processing solid carbon-containing material and pr...

Body obtained by processing solid carbon-containing material, produ...

Single crystalline diamond part production method for stand alone s...

Epitaxial layers in source/drain contacts and methods of forming th...

Porous wire-in-tube structures

Gas storage system

Single crystal synthetic diamond material via chemical vapour depos...

Underlying substrate including a seed crystal layer of a group 13 n...

Magnetic resonance spectrometer

Optical quality diamond material

Selective cyclic dry etching process of dielectric materials using...

Surface treatment method for SiC substrate

Device including semiconductor substrate containing gallium nitride...

Method for manufacturing electronic component for heterojunction pr...

Self-aligned tunable metamaterials

Etching method and plasma processing apparatus

Etching method for SiC substrate and holding container

Device including semiconductor substrate containing gallium nitride...

Patents Applicationslast 30 patents

METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS

DIAMOND STRUCTURE AND METHOD OF FORMING A DIAMOND STRUCTURE

APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...

METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER

SILICON CARBIDE HETEROJUNCTION NORMALLY-OFF HIGH-ELECTRON-MOBILITY...

APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...

CONTROLLED SURFACE CHEMISTRY FOR POLYTYPIC AND MICROSTRUCTURAL SELE...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND PRO...

Method for Producing a Bulk SiC Single Crystal with Improved Qualit...

METHOD FOR SCALABLE FABRICATION OF ULTRAFLAT POLYCRYSTALLINE DIAMON...

SYSTEM AND METHOD FOR SELECTIVE ETCHING OF AMORPHOUS SILICON OVER E...

METHOD OF FORMING AN EPITAXIAL LAYER

CARBON-CONTAINING CAP LAYER FOR DOPED SEMICONDUCTOR EPITAXIAL LAYER

CONTROLLED SURFACE CHEMISTRY FOR POLYTYPIC AND MICROSTRUCTURAL SELE...

Semiconductor Photoelectrode and Method for Manufacturing Same

METHODS OF FORMING SUPERLATTICE STRUCTURES USING NANOPARTICLES

METHOD FOR MANUFACTURING SILICON SINGLE-CRYSTAL SUBSTRATE AND SILIC...

Silicon carbide powder, method for manufacturing silicon carbide in...

A DIAMOND SCANNING ELEMENT, ESPECIALLY FOR IMAGING APPLICATION, AND...

SUBSTRATE AND METHOD FOR ITS MANUFACTURING

Laser Activated Luminescence System

METHOD AND APPARATUS FOR LOW TEMPERATURE SELECTIVE EPITAXY IN A DEE...

SIC SINGLE CRYSTAL MANUFACTURING METHOD, SIC SINGLE CRYSTAL MANUFAC...

METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUM LAYERS

Epitaxial Layers In Source/Drain Contacts And Methods Of Forming Th...

MICRO AND NANO STRUCTURING OF A DIAMOND SUBSTRATE

SiC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, SiC INGOT PRODUCED...

NON-CONTACT POLISHING OF A CRYSTALLINE LAYER OR SUBSTRATE BY ION BE...

METHOD AND DEVICE FOR MANUFACTURING SiC SUBSTRATE, AND METHOD FOR R...