Claims
- 1. An epitaxial semiconductor device in the form of a bipolar transistor (30) comprising in sequence a first layer of a highly doped n-type substrate (31), a second layer of n-type material (32), a Dirac-delta doped monoatomic layer of acceptors (35), a third layer of highly doped n-type material (33), and a fourth layer of very highly doped n-type material; and wherein the collector contact (36) is formed on at least one of said first and second layers (31, 32), the base contact (38) on said Dirac-delta doped monoatomic layer (35) and the emitter contact (37) on said fourth layer.
Parent Case Info
This is a division of Ser. No. 08/014,980, filed Feb. 8, 1993, now U.S. Pat. No. 5,329,150, which is a division of Ser. No. 07/722,589, filed Jun. 27, 1991, now U.S. Pat. No. 5,216,260, which in turn is a continuation of Ser. No. 07/636,017, filed Jan. 4, 1991, which was a division of Ser. No. 07/413,911, filed Sep. 28, 1989, now abandoned, which in turn was a division of U.S. patent application Ser. No. 06/798,053, filed Nov. 14, 1985, now U.S. Pat. No. 4,882,609.
US Referenced Citations (10)
Foreign Referenced Citations (1)
Number |
Date |
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0113074 |
Jul 1984 |
EPX |
Divisions (4)
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Number |
Date |
Country |
Parent |
14980 |
Feb 1993 |
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Parent |
722589 |
Jun 1991 |
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Parent |
413911 |
Sep 1989 |
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Parent |
798053 |
Nov 1985 |
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Continuations (1)
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Date |
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Parent |
636017 |
Jan 1991 |
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