including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body

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H01L27/0886

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/0886including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Nanoribbon thick gate devices with differential ribbon spacing and...
- Patent number 12,249,622
- Issue date Mar 11, 2025
- Intel Corporation
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device including multiple inner spacers with differen...
- Patent number 12,249,639
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device having a gate with a tapering bottom portion and a ga...
- Patent number 12,243,748
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming air spacers in semiconductor devices
- Patent number 12,243,940
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having three-dimensional transistors and seal ri...
- Patent number 12,243,873
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Yang Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method of manufacturing the semiconducto...
- Patent number 12,243,754
- Issue date Mar 4, 2025
- Samsung Electronics Co., Ltd.
- Do Young Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin end spacer dummy gate and method of m...
- Patent number 12,243,930
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kai-Tai Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,237,210
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Chae Ho Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,237,329
- Issue date Feb 25, 2025
- United Microelectronics Corp.
- Chun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,237,383
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Dohee Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,237,386
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Sun Ki Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,237,405
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Ruei Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing shorting between FinFET epitaxial regions
- Patent number 12,237,328
- Issue date Feb 25, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device
- Patent number 12,237,393
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial directional etch method and resulting structures
- Patent number 12,237,397
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip
- Patent number 12,237,401
- Issue date Feb 25, 2025
- Mediatek Inc.
- Cheng-Tien Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and method of manufacturing the same
- Patent number 12,236,180
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Jung Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Contact over active gate structures using directed self-assembly fo...
- Patent number 12,237,223
- Issue date Feb 25, 2025
- Intel Corporation
- Paul A. Nyhus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation structures having uniform step heights
- Patent number 12,237,229
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- I-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of a fin field effect transistor (FinFET) comprising epit...
- Patent number 12,237,403
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut-fin isolation regions and method forming same
- Patent number 12,237,416
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit layout and method thereof
- Patent number 12,230,632
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned inner spacer on gate-all-around structure and methods...
- Patent number 12,230,692
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsungyu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked transistors with different channel widths
- Patent number 12,230,544
- Issue date Feb 18, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure including multi-width semiconductor fins
- Patent number 12,230,633
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing integrated circuit having through-substrate...
- Patent number 12,223,250
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chia Hu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
High voltage device
- Patent number 12,224,213
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor circuit structure with direct die heat removal structure
- Patent number 12,224,225
- Issue date Feb 11, 2025
- INVENTION AND COLLABORATION LABORATORY, INC.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Size-controllable multi-stack semiconductor device and method of ma...
- Patent number 12,224,314
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Gunho Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,224,204
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Nan Yeh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20250072028
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- MING-TE CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20250072078
- Publication date Feb 27, 2025
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20250072101
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250072082
- Publication date Feb 27, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- I-Chih CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20250063799
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Ju Hun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250063749
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Lun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GATE STRUCTURE
- Publication number 20250063759
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING
- Publication number 20250063807
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Yao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET
- Publication number 20250063809
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND String Utilizing Floating Body Memory Cell
- Publication number 20250063718
- Publication date Feb 20, 2025
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Application
DRIVER STAGE CURRENT DENSITY ENHANCEMENT
- Publication number 20250063798
- Publication date Feb 20, 2025
- Intel Corporation
- Yuri Rozenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250048678
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH FINFET WITH SHORTER AND NARROWER FIN UNDER...
- Publication number 20250040237
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vitor A. Vulcano Rossi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE
- Publication number 20250040233
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Cheng CHING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR WITH INDEPENDENTLY BIASABLE SUPPLE...
- Publication number 20250031439
- Publication date Jan 23, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE HEIGHT OPTIMIZATION
- Publication number 20250031426
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Heng Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...
- Publication number 20250022878
- Publication date Jan 16, 2025
- Intel Corporation
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP
- Publication number 20250022936
- Publication date Jan 16, 2025
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250015185
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20250015080
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR
- Publication number 20250015127
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tien Yu Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cut Metal Gate Refill With Buffer Layer
- Publication number 20250014946
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fan Hsuan Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF SEMICONDUCTOR STRUCTURE
- Publication number 20250015081
- Publication date Jan 9, 2025
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jisong JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...
- Publication number 20250015188
- Publication date Jan 9, 2025
- STMicroelectronics (Rousset) SAS
- Abderrezak MARZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DIELECTRIC GATE ISOLATION SECTION
- Publication number 20250006732
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY US...
- Publication number 20250006579
- Publication date Jan 2, 2025
- Intel Corporation
- Avijit Barik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20250006559
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Siao-Jing Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED INSULATING FILM STACK
- Publication number 20250006560
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chieh-Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRANSISTOR STRUCTURE AND METHODS OF FORMATION
- Publication number 20250006731
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kau-Chu LIN
- H01 - BASIC ELECTRIC ELEMENTS

including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nanoribbon thick gate devices with differential ribbon spacing and...

Semiconductor device including multiple inner spacers with differen...

FinFET device having a gate with a tapering bottom portion and a ga...

Methods of forming air spacers in semiconductor devices

Integrated circuit having three-dimensional transistors and seal ri...

Semiconductor device and a method of manufacturing the semiconducto...

Semiconductor device with fin end spacer dummy gate and method of m...

Semiconductor device

Semiconductor device and method for fabricating the same

Integrated circuit device

Semiconductor device and method for fabricating the same

Semiconductor devices and methods of manufacturing thereof

Minimizing shorting between FinFET epitaxial regions

Method of fabricating a semiconductor device

Partial directional etch method and resulting structures

Semiconductor chip

Integrated circuit and method of manufacturing the same

Contact over active gate structures using directed self-assembly fo...

Shallow trench isolation structures having uniform step heights

Structure of a fin field effect transistor (FinFET) comprising epit...

Cut-fin isolation regions and method forming same

Integrated circuit layout and method thereof

Self-aligned inner spacer on gate-all-around structure and methods...

Stacked transistors with different channel widths

Integrated circuit structure including multi-width semiconductor fins

Method of manufacturing integrated circuit having through-substrate...

High voltage device

Semiconductor circuit structure with direct die heat removal structure

Size-controllable multi-stack semiconductor device and method of ma...

Semiconductor device and method

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

METHOD OF FORMING GATE STRUCTURE

SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING

FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET

NAND String Utilizing Floating Body Memory Cell

DRIVER STAGE CURRENT DENSITY ENHANCEMENT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

INTEGRATED CIRCUIT WITH FINFET WITH SHORTER AND NARROWER FIN UNDER...

SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE

FIN-TYPE FIELD EFFECT TRANSISTOR WITH INDEPENDENTLY BIASABLE SUPPLE...

GATE HEIGHT OPTIMIZATION

USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

FIN-TYPE FIELD EFFECT TRANSISTOR DEVICE

SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR

Cut Metal Gate Refill With Buffer Layer

FABRICATION METHOD OF SEMICONDUCTOR STRUCTURE

TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...

SEMICONDUCTOR DEVICE HAVING DIELECTRIC GATE ISOLATION SECTION

MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY US...

GATE ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME

MULTI-LAYERED INSULATING FILM STACK

HIGH VOLTAGE TRANSISTOR STRUCTURE AND METHODS OF FORMATION