including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body

Industry

CPC
H01L27/0886

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/0886including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
High-voltage semiconductor device structures
- Patent number 12,205,949
- Issue date Jan 21, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Zhenyu Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET gate structure and related methods
- Patent number 12,205,848
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Ting Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar buried channel structure integrated with non-planar structures
- Patent number 12,205,947
- Issue date Jan 21, 2025
- Intel Corporation
- Guannan Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET semiconductor device
- Patent number 12,206,001
- Issue date Jan 21, 2025
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy gate cutting process and resulting gate structures
- Patent number 12,206,011
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid method for forming semiconductor interconnect structure
- Patent number 12,205,886
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Kang Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a multi-gate device having a semiconductor...
- Patent number 12,199,170
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Ju Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having interconnection lines with different li...
- Patent number 12,199,042
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Wonhyuk Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy poly layout for high density devices
- Patent number 12,199,087
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yung Feng Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate isolation layer
- Patent number 12,199,096
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Seung Seok Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures with tapered gate or trench con...
- Patent number 12,199,161
- Issue date Jan 14, 2025
- Intel Corporation
- Charles H. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses including Finfets having different gate oxide configura...
- Patent number 12,199,094
- Issue date Jan 14, 2025
- Micron Technology, Inc.
- Hyuck Soo Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistors having vertically stacked nano-sheet
- Patent number 12,199,095
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neighboring gate-all-around integrated circuit structures having co...
- Patent number 12,199,142
- Issue date Jan 14, 2025
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,191,304
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar semiconductor device having doped sub-fin region and met...
- Patent number 12,191,308
- Issue date Jan 7, 2025
- Tahoe Research, LTD.
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of silicon channel nanostructures and silicon-germanium...
- Patent number 12,191,305
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Shi Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing off-state leakage in semiconductor devices
- Patent number 12,191,349
- Issue date Jan 7, 2025
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device with capped air-gap spacer
- Patent number 12,191,373
- Issue date Jan 7, 2025
- Samsung Electronics Co., Ltd.
- Sangkoo Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,191,391
- Issue date Jan 7, 2025
- United Microelectronics Corp.
- Shou-Wan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using different work-functions to reduce gate-induced drain leakage...
- Patent number 12,191,352
- Issue date Jan 7, 2025
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar I/O and logic semiconductor devices having different wor...
- Patent number 12,191,207
- Issue date Jan 7, 2025
- Intel Corporation
- Roman W. Olac-Vaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ formation of metal gate modulators
- Patent number 12,183,638
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Han Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,183,733
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jia-Chuan You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 12,183,637
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chi Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including an isolation insulating pattern on...
- Patent number 12,183,732
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Inwon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,183,734
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Sang Min Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside PN junction diode
- Patent number 12,183,736
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Xuan Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...
- Publication number 20250022878
- Publication date Jan 16, 2025
- Intel Corporation
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP
- Publication number 20250022936
- Publication date Jan 16, 2025
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250015185
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20250015080
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR
- Publication number 20250015127
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tien Yu Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cut Metal Gate Refill With Buffer Layer
- Publication number 20250014946
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fan Hsuan Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF SEMICONDUCTOR STRUCTURE
- Publication number 20250015081
- Publication date Jan 9, 2025
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jisong JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...
- Publication number 20250015188
- Publication date Jan 9, 2025
- STMicroelectronics (Rousset) SAS
- Abderrezak MARZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DIELECTRIC GATE ISOLATION SECTION
- Publication number 20250006732
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY US...
- Publication number 20250006579
- Publication date Jan 2, 2025
- Intel Corporation
- Avijit Barik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20250006559
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Siao-Jing Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED INSULATING FILM STACK
- Publication number 20250006560
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chieh-Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRANSISTOR STRUCTURE AND METHODS OF FORMATION
- Publication number 20250006731
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kau-Chu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT OF SELF-ALIGNED CONTACT POST REPLACEMENT METAL GATE
- Publication number 20240429096
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USER MODEL-BASED DATA LOSS PREVENTION
- Publication number 20240430308
- Publication date Dec 26, 2024
- ARMORBLOX LLC
- Chetan Anand
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THERMAL BUDGET ENHANCED BURIED POWER RAIL AND METHOD OF MANUFACTURI...
- Publication number 20240429169
- Publication date Dec 26, 2024
- SAMSUNG ELECTRONICS CO,. LTD.
- Saehan PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT MITIGATING CONTACT TO GATE SHORT
- Publication number 20240429103
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH MULTI-LENGTH GATE ELECTRODE
- Publication number 20240421002
- Publication date Dec 19, 2024
- Intel Corporation
- Hwichan Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
- Publication number 20240421216
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Sunggyu Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY GATE CUTTING PROCESS AND RESULTING GATE STRUCTURES
- Publication number 20240421211
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device With Isolation Structure
- Publication number 20240413150
- Publication date Dec 12, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
- Chieh-Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413151
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Jungho DO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES AND CONFIGURATIONS TO REDUCE TRANSISTOR GATE SHORT DEFECTS
- Publication number 20240413016
- Publication date Dec 12, 2024
- Intel Corporation
- Sridhar GOVINDARAJU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METALLIZATION LINES ON INTEGRATED CIRCUIT PRODUCTS
- Publication number 20240413082
- Publication date Dec 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure and Method of Forming Thereof
- Publication number 20240413087
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Cheng Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH PATTERN OVERLAY FOR ASSISTING OVERLAY SIGNA...
- Publication number 20240405100
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei-Sheng TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240405087
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Chin KING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING EPITAXIAL SOURCE/DRAIN FEATURES IN SEMICONDUCTOR...
- Publication number 20240395866
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Tzu-Hsiang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240395909
- Publication date Nov 28, 2024
- UNITED MICROELECTRONICS CORP.
- Chin-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS

including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High-voltage semiconductor device structures

FinFET gate structure and related methods

Planar buried channel structure integrated with non-planar structures

FinFET semiconductor device

Dummy gate cutting process and resulting gate structures

Hybrid method for forming semiconductor interconnect structure

Method of manufacturing a multi-gate device having a semiconductor...

Semiconductor device having interconnection lines with different li...

Dummy poly layout for high density devices

Gate line plug structures for advanced integrated circuit structure...

Semiconductor device having gate isolation layer

Contact over active gate structures with tapered gate or trench con...

Apparatuses including Finfets having different gate oxide configura...

Fin field effect transistors having vertically stacked nano-sheet

Neighboring gate-all-around integrated circuit structures having co...

Plugs for interconnect lines for advanced integrated circuit struct...

Method of manufacturing a semiconductor device and a semiconductor...

Non-planar semiconductor device having doped sub-fin region and met...

Integration of silicon channel nanostructures and silicon-germanium...

Reducing off-state leakage in semiconductor devices

Method of forming a semiconductor device with capped air-gap spacer

Semiconductor device and method for fabricating the same

Using different work-functions to reduce gate-induced drain leakage...

Non-planar I/O and logic semiconductor devices having different wor...

In-situ formation of metal gate modulators

Semiconductor device structure and methods of forming the same

Fin field-effect transistor and method of forming the same

Semiconductor devices including an isolation insulating pattern on...

Semiconductor device and method for fabricating the same

Backside PN junction diode

Patents Applicationslast 30 patents

USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

FIN-TYPE FIELD EFFECT TRANSISTOR DEVICE

SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR

Cut Metal Gate Refill With Buffer Layer

FABRICATION METHOD OF SEMICONDUCTOR STRUCTURE

TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...

SEMICONDUCTOR DEVICE HAVING DIELECTRIC GATE ISOLATION SECTION

MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY US...

GATE ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME

MULTI-LAYERED INSULATING FILM STACK

HIGH VOLTAGE TRANSISTOR STRUCTURE AND METHODS OF FORMATION

GATE CUT OF SELF-ALIGNED CONTACT POST REPLACEMENT METAL GATE

USER MODEL-BASED DATA LOSS PREVENTION

THERMAL BUDGET ENHANCED BURIED POWER RAIL AND METHOD OF MANUFACTURI...

BACKSIDE CONTACT MITIGATING CONTACT TO GATE SHORT

INTEGRATED CIRCUIT DEVICE WITH MULTI-LENGTH GATE ELECTRODE

INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE

DUMMY GATE CUTTING PROCESS AND RESULTING GATE STRUCTURES

Semiconductor Device With Isolation Structure

SEMICONDUCTOR DEVICE

TECHNIQUES AND CONFIGURATIONS TO REDUCE TRANSISTOR GATE SHORT DEFECTS

METALLIZATION LINES ON INTEGRATED CIRCUIT PRODUCTS

Interconnect Structure and Method of Forming Thereof

INTEGRATED CIRCUIT WITH PATTERN OVERLAY FOR ASSISTING OVERLAY SIGNA...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHODS OF FORMING EPITAXIAL SOURCE/DRAIN FEATURES IN SEMICONDUCTOR...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME