including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body

Industry

CPC
H01L27/0886

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/0886including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing integrated circuit having through-substrate...
- Patent number 12,223,250
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chia Hu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Size-controllable multi-stack semiconductor device and method of ma...
- Patent number 12,224,314
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Gunho Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device
- Patent number 12,224,213
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor circuit structure with direct die heat removal structure
- Patent number 12,224,225
- Issue date Feb 11, 2025
- INVENTION AND COLLABORATION LABORATORY, INC.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,224,204
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Nan Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for FinFet fabrication and structure thereof
- Patent number 12,224,210
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with backside air gap dielectric
- Patent number 12,224,212
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,224,325
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device with partitioned active regions
- Patent number 12,224,343
- Issue date Feb 11, 2025
- Analog Power Conversion LLC
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with bottom dielectric isolation
- Patent number 12,224,312
- Issue date Feb 11, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for providing line end extensions for fin-type...
- Patent number 12,218,239
- Issue date Feb 4, 2025
- Mosaid Technologies Incorporated
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radical treatment in supercritical fluid for gate dielectric qualit...
- Patent number 12,218,225
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with etch stop layer for reducing RC...
- Patent number 12,218,241
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced lithography and self-assembled devices
- Patent number 12,218,052
- Issue date Feb 4, 2025
- Intel Corporation
- Richard E. Schenker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and method with solid phase diffusion
- Patent number 12,218,203
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Yi Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,218,129
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Chen Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate separation region
- Patent number 12,218,131
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sun Ki Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and method of forming the same
- Patent number 12,218,193
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Jae-hyun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure cutting process and structures formed thereby
- Patent number 12,218,130
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chang Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor devices having gate spacers...
- Patent number 12,218,216
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,218,221
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,218,242
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for fabricating the same
- Patent number 12,211,845
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Ku Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid channel semiconductor device and method
- Patent number 12,211,900
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,211,836
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,211,751
- Issue date Jan 28, 2025
- United Microelectronics Corp.
- Chih-Kai Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut EPI process and structures
- Patent number 12,211,749
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Standard-cell layout structure with horn power and smart metal cut
- Patent number 12,211,793
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ni-Wan Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing FinFETs by fin-recessing processes to form...
- Patent number 12,211,842
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of fin-type field effect transistor structure
- Patent number 12,211,843
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250048678
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH FINFET WITH SHORTER AND NARROWER FIN UNDER...
- Publication number 20250040237
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vitor A. Vulcano Rossi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE
- Publication number 20250040233
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Cheng CHING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR WITH INDEPENDENTLY BIASABLE SUPPLE...
- Publication number 20250031439
- Publication date Jan 23, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE HEIGHT OPTIMIZATION
- Publication number 20250031426
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Heng Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...
- Publication number 20250022878
- Publication date Jan 16, 2025
- Intel Corporation
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP
- Publication number 20250022936
- Publication date Jan 16, 2025
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250015185
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20250015080
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR
- Publication number 20250015127
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tien Yu Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cut Metal Gate Refill With Buffer Layer
- Publication number 20250014946
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fan Hsuan Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF SEMICONDUCTOR STRUCTURE
- Publication number 20250015081
- Publication date Jan 9, 2025
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jisong JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...
- Publication number 20250015188
- Publication date Jan 9, 2025
- STMicroelectronics (Rousset) SAS
- Abderrezak MARZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DIELECTRIC GATE ISOLATION SECTION
- Publication number 20250006732
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY US...
- Publication number 20250006579
- Publication date Jan 2, 2025
- Intel Corporation
- Avijit Barik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20250006559
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Siao-Jing Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED INSULATING FILM STACK
- Publication number 20250006560
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chieh-Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRANSISTOR STRUCTURE AND METHODS OF FORMATION
- Publication number 20250006731
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kau-Chu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT OF SELF-ALIGNED CONTACT POST REPLACEMENT METAL GATE
- Publication number 20240429096
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USER MODEL-BASED DATA LOSS PREVENTION
- Publication number 20240430308
- Publication date Dec 26, 2024
- ARMORBLOX LLC
- Chetan Anand
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BACKSIDE CONTACT MITIGATING CONTACT TO GATE SHORT
- Publication number 20240429103
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL BUDGET ENHANCED BURIED POWER RAIL AND METHOD OF MANUFACTURI...
- Publication number 20240429169
- Publication date Dec 26, 2024
- SAMSUNG ELECTRONICS CO,. LTD.
- Saehan PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH MULTI-LENGTH GATE ELECTRODE
- Publication number 20240421002
- Publication date Dec 19, 2024
- Intel Corporation
- Hwichan Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
- Publication number 20240421216
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Sunggyu Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY GATE CUTTING PROCESS AND RESULTING GATE STRUCTURES
- Publication number 20240421211
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device With Isolation Structure
- Publication number 20240413150
- Publication date Dec 12, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
- Chieh-Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413151
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Jungho DO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES AND CONFIGURATIONS TO REDUCE TRANSISTOR GATE SHORT DEFECTS
- Publication number 20240413016
- Publication date Dec 12, 2024
- Intel Corporation
- Sridhar GOVINDARAJU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METALLIZATION LINES ON INTEGRATED CIRCUIT PRODUCTS
- Publication number 20240413082
- Publication date Dec 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing integrated circuit having through-substrate...

Size-controllable multi-stack semiconductor device and method of ma...

High voltage device

Semiconductor circuit structure with direct die heat removal structure

Semiconductor device and method

Method for FinFet fabrication and structure thereof

Semiconductor devices with backside air gap dielectric

Semiconductor device and manufacturing method thereof

Power device with partitioned active regions

Field effect transistors with bottom dielectric isolation

Structure and method for providing line end extensions for fin-type...

Radical treatment in supercritical fluid for gate dielectric qualit...

Semiconductor device structure with etch stop layer for reducing RC...

Advanced lithography and self-assembled devices

Integrated circuit structure and method with solid phase diffusion

Semiconductor device and manufacturing method thereof

Semiconductor device including gate separation region

Integrated circuit device and method of forming the same

Semiconductor structure cutting process and structures formed thereby

Method for manufacturing semiconductor devices having gate spacers...

Semiconductor device and method

Semiconductor structure

Semiconductor device and a method for fabricating the same

Hybrid channel semiconductor device and method

Semiconductor device and manufacturing method thereof

Semiconductor device and method for fabricating the same

Cut EPI process and structures

Standard-cell layout structure with horn power and smart metal cut

Method for manufacturing FinFETs by fin-recessing processes to form...

Manufacturing method of fin-type field effect transistor structure

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

INTEGRATED CIRCUIT WITH FINFET WITH SHORTER AND NARROWER FIN UNDER...

SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE

FIN-TYPE FIELD EFFECT TRANSISTOR WITH INDEPENDENTLY BIASABLE SUPPLE...

GATE HEIGHT OPTIMIZATION

USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

FIN-TYPE FIELD EFFECT TRANSISTOR DEVICE

SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR

Cut Metal Gate Refill With Buffer Layer

FABRICATION METHOD OF SEMICONDUCTOR STRUCTURE

TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...

SEMICONDUCTOR DEVICE HAVING DIELECTRIC GATE ISOLATION SECTION

MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY US...

GATE ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME

MULTI-LAYERED INSULATING FILM STACK

HIGH VOLTAGE TRANSISTOR STRUCTURE AND METHODS OF FORMATION

GATE CUT OF SELF-ALIGNED CONTACT POST REPLACEMENT METAL GATE

USER MODEL-BASED DATA LOSS PREVENTION

BACKSIDE CONTACT MITIGATING CONTACT TO GATE SHORT

THERMAL BUDGET ENHANCED BURIED POWER RAIL AND METHOD OF MANUFACTURI...

INTEGRATED CIRCUIT DEVICE WITH MULTI-LENGTH GATE ELECTRODE

INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE

DUMMY GATE CUTTING PROCESS AND RESULTING GATE STRUCTURES

Semiconductor Device With Isolation Structure

SEMICONDUCTOR DEVICE

TECHNIQUES AND CONFIGURATIONS TO REDUCE TRANSISTOR GATE SHORT DEFECTS

METALLIZATION LINES ON INTEGRATED CIRCUIT PRODUCTS