Laser beam processing of fets

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CPC
Y10S148/091

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/091Laser beam processing of fets

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 7,238,558
- Issue date Jul 3, 2007
- Semiconductor Energy Laboratory Co., Ltd.
- Yasuhiko Takemura
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Semiconductor device method of manufacturing
- Patent number 6,974,732
- Issue date Dec 13, 2005
- Semiconductor Energy Laboratory Co., Ltd.
- Hisashi Ohtani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 6,872,605
- Issue date Mar 29, 2005
- Semiconductor Energy Laboratory Co., Ltd.
- Yasuhiko Takemura
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Method and structure for crystallizing a film
- Patent number 6,610,998
- Issue date Aug 26, 2003
- Goldstar Electron Co., Ltd.
- Min Hwa Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device
- Patent number 6,479,331
- Issue date Nov 12, 2002
- Semiconductor Energy Laboratory Co., Ltd.
- Yasuhiko Takemura
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Semiconductor device and fabricating method thereof
- Patent number 6,432,756
- Issue date Aug 13, 2002
- Semiconductor Energy Laboratory Co., Ltd.
- Hisashi Ohtani
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and structure for crystallizing a film
- Patent number 6,130,120
- Issue date Oct 10, 2000
- Goldstar Electron Co., Ltd.
- Min Hwa Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating thin film transistor device
- Patent number 5,943,593
- Issue date Aug 24, 1999
- Sony Corporation
- Takashi Noguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing liquid crystal display device
- Patent number 5,858,807
- Issue date Jan 12, 1999
- Kabushiki Kaisha Toshiba
- Shinichi Kawamura
- G02 - OPTICS
Information Patent Grant
Method for manfacturing a thin film transistor by using temperature...
- Patent number 5,851,859
- Issue date Dec 22, 1998
- Goldstar Co., Ltd.
- Jeong Hyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating thin film transistor device
- Patent number 5,817,548
- Issue date Oct 6, 1998
- Sony Corporation
- Takashi Noguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor layer of thin film transistor by u...
- Patent number 5,686,320
- Issue date Nov 11, 1997
- Goldstar Co., Ltd.
- Jeong Hyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor MIS field effect transistor with semi-amorphous semic...
- Patent number 5,591,987
- Issue date Jan 7, 1997
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having at least two thin film transistors
- Patent number 5,572,046
- Issue date Nov 5, 1996
- Semiconductor Energy Laboratory Co., Ltd.
- Yasuhiko Takemura
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Method of fabricating a TFT
- Patent number 5,403,762
- Issue date Apr 4, 1995
- Semiconductor Energy Laboratory Co., Ltd.
- Yasuhiko Takemura
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Process for producing single crystal semiconductor layer and semico...
- Patent number 5,371,381
- Issue date Dec 6, 1994
- Agency of Industrial Science and Technology
- Kazuyuki Sugahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for preparing a polycrystalline semiconductor thin film tra...
- Patent number 5,306,651
- Issue date Apr 26, 1994
- Asahi Glass Company Ltd.
- Kunio Masumo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling the state of conduction of an MOS transistor...
- Patent number 5,281,553
- Issue date Jan 25, 1994
- Bull, S.A.
- Alain Boudou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,091,334
- Issue date Feb 25, 1992
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for recrystallizing specified portions of a non-crystalline...
- Patent number 5,077,233
- Issue date Dec 31, 1991
- Fujitsu Limited
- Ryoichi Mukai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET with a super lattice channel
- Patent number 5,055,887
- Issue date Oct 8, 1991
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an integrated circuit structure with multiple com...
- Patent number 5,045,501
- Issue date Sep 3, 1991
- Hughes Aircraft Company
- Jan Grinberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removal of surface contaminants by irradiation from a high-energy s...
- Patent number 5,024,968
- Issue date Jun 18, 1991
- Audrey C. Engelsberg
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
FET with a super lattice channel
- Patent number 5,021,839
- Issue date Jun 4, 1991
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming FET with a super lattice channel
- Patent number 5,008,211
- Issue date Apr 16, 1991
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making CMOS integrated devices in seeded islands
- Patent number 4,997,780
- Issue date Mar 5, 1991
- NCR Corporation
- Nicholas J. Szluk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming FET with a super lattice channel
- Patent number 4,988,634
- Issue date Jan 29, 1991
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film semiconductor device with oxide film on insulating layer
- Patent number 4,984,033
- Issue date Jan 8, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Akira Ishizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing liquid crystal display device
- Patent number 4,963,503
- Issue date Oct 16, 1990
- Hosiden Electronics Co., Ltd.
- Shigeo Aoki
- G02 - OPTICS
Information Patent Grant
FET with a super lattice channel
- Patent number 4,908,678
- Issue date Mar 13, 1990
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20050153488
- Publication date Jul 14, 2005
- Semiconductor Energy Laboratory Co., Ltd.
- Yasuhiko Takemura
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Application
Semiconductor device and fabricating method thereof
- Publication number 20040058486
- Publication date Mar 25, 2004
- Semiconductor Energy Laboratory Co., Ltd.
- Hisashi Ohtani
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20030036222
- Publication date Feb 20, 2003
- Semiconductor Energy Laboratory Co., Ltd.
- Yasuhiko Takemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and fabricating method thereof
- Publication number 20030010982
- Publication date Jan 16, 2003
- Semiconductor Energy Laboratory Co., Ltd.
- Hisashi Ohtani
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
- Publication number 20020022350
- Publication date Feb 21, 2002
- HISASHI OHTANI
- C30 - CRYSTAL GROWTH

Laser beam processing of fets

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method of fabricating the same

Semiconductor device method of manufacturing

Semiconductor device and method of fabricating the same

Method and structure for crystallizing a film

Method of fabricating a semiconductor device

Semiconductor device and fabricating method thereof

Method and structure for crystallizing a film

Method for fabricating thin film transistor device

Method of manufacturing liquid crystal display device

Method for manfacturing a thin film transistor by using temperature...

Method for fabricating thin film transistor device

Method for forming semiconductor layer of thin film transistor by u...

Semiconductor MIS field effect transistor with semi-amorphous semic...

Semiconductor device having at least two thin film transistors

Method of fabricating a TFT

Process for producing single crystal semiconductor layer and semico...

Process for preparing a polycrystalline semiconductor thin film tra...

Method for controlling the state of conduction of an MOS transistor...

Semiconductor device

Method for recrystallizing specified portions of a non-crystalline...

FET with a super lattice channel

Method of forming an integrated circuit structure with multiple com...

Removal of surface contaminants by irradiation from a high-energy s...

FET with a super lattice channel

Method for forming FET with a super lattice channel

Method of making CMOS integrated devices in seeded islands

Method for forming FET with a super lattice channel

Thin film semiconductor device with oxide film on insulating layer

Method of manufacturing liquid crystal display device

FET with a super lattice channel

Patents Applicationslast 30 patents

Semiconductor device and method of fabricating the same

Semiconductor device and fabricating method thereof

Semiconductor device and method of fabricating the same

Semiconductor device and fabricating method thereof

SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF