Lateral isolation by air gap

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CPC
H01L21/76289

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/76289Lateral isolation by air gap

Industries

Patents Grantslast 30 patents

Information Patent Grant
High voltage diode on SOI substrate with trench-modified current path
- Patent number 12,125,923
- Issue date Oct 22, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Jaroslav Pjencak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap formation method
- Patent number 12,087,616
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chih Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming intermetallic air gap
- Patent number 12,002,708
- Issue date Jun 4, 2024
- Shanghai IC R&D Center Co., Ltd.
- Xiaoxu Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back side processing of integrated circuit structures to form insul...
- Patent number 11,894,262
- Issue date Feb 6, 2024
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors including a portion of a base layer in...
- Patent number 11,848,374
- Issue date Dec 19, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back side processing of integrated circuit structures to form insul...
- Patent number 11,605,556
- Issue date Mar 14, 2023
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer with localized semiconductor on insulator regions with cavity...
- Patent number 11,488,980
- Issue date Nov 1, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit components with substrate cavities
- Patent number 11,335,777
- Issue date May 17, 2022
- Intel Corporation
- Kevin L. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator (SOI) device with reduced parasitic capa...
- Patent number 11,164,892
- Issue date Nov 2, 2021
- Newport Fab, LLC
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation for integrated circuits
- Patent number 11,145,539
- Issue date Oct 12, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,101,177
- Issue date Aug 24, 2021
- Winbond Electronics Corp.
- Che-Jui Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage diode on SOI substrate with trench-modified current path
- Patent number 10,971,632
- Issue date Apr 6, 2021
- Semiconductor Components Industries, LLC
- Jaroslav Pjencak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet substrate isolated source/drain epitaxy via airgap
- Patent number 10,937,862
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 10,879,364
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a shallow trench isolation structure an...
- Patent number 10,867,838
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Li Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air-cavity module with enhanced device isolation
- Patent number 10,784,149
- Issue date Sep 22, 2020
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy gate isolation and method of production thereof
- Patent number 10,727,108
- Issue date Jul 28, 2020
- GLOBALFOUNDRIES Inc.
- David Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with airgap
- Patent number 10,692,753
- Issue date Jun 23, 2020
- International Business Machines Corporation
- Mark D. Jaffe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrates with self-aligned buried dielectric and polycrystalline...
- Patent number 10,651,281
- Issue date May 12, 2020
- GLOBALFOUNDRIES Inc.
- Siva P. Adusumilli
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device
- Patent number 10,566,418
- Issue date Feb 18, 2020
- United Microelectronics Corp.
- Zhi-Biao Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation for integrated circuits
- Patent number 10,522,390
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field emission devices and methods of making thereof
- Patent number 10,504,772
- Issue date Dec 10, 2019
- Infineon Technologies AG
- Alfons Dehe
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method of forming semiconductor memory device
- Patent number 10,490,555
- Issue date Nov 26, 2019
- United Microelectronics Corp.
- Yi-Ching Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF electronic circuit comprising cavities buried under RF electroni...
- Patent number 10,431,597
- Issue date Oct 1, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Lucile Arnaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor strips with undercuts and methods for forming the same
- Patent number 10,269,937
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tai-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,256,300
- Issue date Apr 9, 2019
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Shinya Natsume
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for patterning active regions of transistor elements in a...
- Patent number 10,217,660
- Issue date Feb 26, 2019
- GLOBALFOUNDRIES Inc.
- Ryan Sporer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with airgap
- Patent number 10,211,087
- Issue date Feb 19, 2019
- International Business Machines Corporation
- Mark D. Jaffe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 10,134,836
- Issue date Nov 20, 2018
- United Microelectronics Corp.
- Zhi-Biao Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor isolation structure with air gaps in deep trenches
- Patent number 10,049,941
- Issue date Aug 14, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hong-Seng Shue
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Conductive Features with Air Spacer and Method of Forming Same
- Publication number 20240387332
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsiang-Wei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP FORMATION METHOD
- Publication number 20230238275
- Publication date Jul 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chih HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK SIDE PROCESSING OF INTEGRATED CIRCUIT STRUCTURES TO FORM INSUL...
- Publication number 20230132053
- Publication date Apr 27, 2023
- Intel Corporation
- Aaron D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thermal Isolation Between Embedded MECA Modules
- Publication number 20230122242
- Publication date Apr 20, 2023
- HRL LABORATORIES, LLC
- Florian Herrault
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS INCLUDING A PORTION OF A BASE LAYER IN...
- Publication number 20230084007
- Publication date Mar 16, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE FEATURES WITH AIR SPACER AND METHOD OF FORMING SAME
- Publication number 20230038952
- Publication date Feb 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsiang-Wei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING INTERMETALLIC AIR GAP
- Publication number 20220246466
- Publication date Aug 4, 2022
- XIAOXU KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER WITH LOCALIZED SEMICONDUCTOR ON INSULATOR REGIONS WITH CAVITY...
- Publication number 20220068975
- Publication date Mar 3, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Siva P. ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING AN UNDERCUT IN A 300 MM SILICON-ON-INSULATOR P...
- Publication number 20210375668
- Publication date Dec 2, 2021
- IMEC vzw
- Didit Yudistira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DIODE ON SOI SUBSTRATE WITH TRENCH-MODIFIED CURRENT PATH
- Publication number 20210193847
- Publication date Jun 24, 2021
- Semiconductor Components Industries, LLC
- Jaroslav PJENCAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor-On-Insulator (SOI) Device with Reduced Parasitic Capa...
- Publication number 20210005630
- Publication date Jan 7, 2021
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DIODE ON SOI SUBSTRATE WITH TRENCH-MODIFIED CURRENT PATH
- Publication number 20200403103
- Publication date Dec 24, 2020
- Semiconductor Components Industries, LLC
- Jaroslav PJENCAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATES WITH SELF-ALIGNED BURIED DIELECTRIC AND POLYCRYSTALLINE...
- Publication number 20200176589
- Publication date Jun 4, 2020
- GLOBALFOUNDRIES Inc.
- Siva P. Adusumilli
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATED CIRCUIT COMPONENTS WITH SUBSTRATE CAVITIES
- Publication number 20200144369
- Publication date May 7, 2020
- Intel Corporation
- Kevin L. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow Trench Isolation for Integrated Circuits
- Publication number 20200051851
- Publication date Feb 13, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Gulbagh SINGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET SUBSTRATE ISOLATED SOURCE/DRAIN EPITAXY VIA AIRGAP
- Publication number 20200044023
- Publication date Feb 6, 2020
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION FOR INTEGRATED CIRCUITS
- Publication number 20190393078
- Publication date Dec 26, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Gulbagh SINGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR SAME
- Publication number 20190378910
- Publication date Dec 12, 2019
- Shanghai Huali Integrated Circuit Mfg. Co., Ltd.
- Yang SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK SIDE PROCESSING OF INTEGRATED CIRCUIT STRUCTURES TO FORM INSUL...
- Publication number 20190341297
- Publication date Nov 7, 2019
- Intel Corporation
- Aaron D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH AIRGAP
- Publication number 20190139819
- Publication date May 9, 2019
- International Business Machines Corporation
- Mark D. JAFFE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20190035887
- Publication date Jan 31, 2019
- United Microelectronics Corp.
- Zhi-Biao Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR PATTERNING ACTIVE REGIONS OF TRANSISTOR ELEMENTS IN A...
- Publication number 20190027400
- Publication date Jan 24, 2019
- GLOBALFOUNDRIES INC.
- Ryan Sporer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Shallow Trench Isolation Structure an...
- Publication number 20180240698
- Publication date Aug 23, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Li Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION FORMATION FROM THE SUBSTRATE BACK SIDE USING LAYER...
- Publication number 20180226292
- Publication date Aug 9, 2018
- GLOBALFOUNDRIES INC.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20180219063
- Publication date Aug 2, 2018
- United Microelectronics Corp.
- Zhi-Biao Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR-CAVITY MODULE WITH ENHANCED DEVICE ISOLATION
- Publication number 20180138082
- Publication date May 17, 2018
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Strips with Undercuts and Methods for Forming the Same
- Publication number 20180130896
- Publication date May 10, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tai-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME
- Publication number 20180122898
- Publication date May 3, 2018
- SK hynix Inc.
- Hae-Jung PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF DEVICE WITH REDUCED SUBSTRATE COUPLING
- Publication number 20180083098
- Publication date Mar 22, 2018
- QUALCOMM Incorporated
- Sinan Goktepeli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH AIRGAP
- Publication number 20180068887
- Publication date Mar 8, 2018
- International Business Machines Corporation
- Mark D. JAFFE
- H01 - BASIC ELECTRIC ELEMENTS

Lateral isolation by air gap

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High voltage diode on SOI substrate with trench-modified current path

Air gap formation method

Method for forming intermetallic air gap

Back side processing of integrated circuit structures to form insul...

Bipolar junction transistors including a portion of a base layer in...

Back side processing of integrated circuit structures to form insul...

Wafer with localized semiconductor on insulator regions with cavity...

Integrated circuit components with substrate cavities

Semiconductor-on-insulator (SOI) device with reduced parasitic capa...

Shallow trench isolation for integrated circuits

Semiconductor structure and method for forming the same

High voltage diode on SOI substrate with trench-modified current path

Nanosheet substrate isolated source/drain epitaxy via airgap

Semiconductor structure and manufacturing method thereof

Semiconductor device having a shallow trench isolation structure an...

Air-cavity module with enhanced device isolation

Dummy gate isolation and method of production thereof

Semiconductor structure with airgap

Substrates with self-aligned buried dielectric and polycrystalline...

Semiconductor device

Shallow trench isolation for integrated circuits

Field emission devices and methods of making thereof

Method of forming semiconductor memory device

RF electronic circuit comprising cavities buried under RF electroni...

Semiconductor strips with undercuts and methods for forming the same

Semiconductor device

Technique for patterning active regions of transistor elements in a...

Semiconductor structure with airgap

Semiconductor device and method of fabricating the same

Semiconductor isolation structure with air gaps in deep trenches

Patents Applicationslast 30 patents

Conductive Features with Air Spacer and Method of Forming Same

AIR GAP FORMATION METHOD

BACK SIDE PROCESSING OF INTEGRATED CIRCUIT STRUCTURES TO FORM INSUL...

Thermal Isolation Between Embedded MECA Modules

BIPOLAR JUNCTION TRANSISTORS INCLUDING A PORTION OF A BASE LAYER IN...

CONDUCTIVE FEATURES WITH AIR SPACER AND METHOD OF FORMING SAME

METHOD FOR FORMING INTERMETALLIC AIR GAP

WAFER WITH LOCALIZED SEMICONDUCTOR ON INSULATOR REGIONS WITH CAVITY...

METHOD FOR PRODUCING AN UNDERCUT IN A 300 MM SILICON-ON-INSULATOR P...

HIGH VOLTAGE DIODE ON SOI SUBSTRATE WITH TRENCH-MODIFIED CURRENT PATH

Semiconductor-On-Insulator (SOI) Device with Reduced Parasitic Capa...

HIGH VOLTAGE DIODE ON SOI SUBSTRATE WITH TRENCH-MODIFIED CURRENT PATH

SUBSTRATES WITH SELF-ALIGNED BURIED DIELECTRIC AND POLYCRYSTALLINE...

INTEGRATED CIRCUIT COMPONENTS WITH SUBSTRATE CAVITIES

Shallow Trench Isolation for Integrated Circuits

NANOSHEET SUBSTRATE ISOLATED SOURCE/DRAIN EPITAXY VIA AIRGAP

SHALLOW TRENCH ISOLATION FOR INTEGRATED CIRCUITS

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR SAME

BACK SIDE PROCESSING OF INTEGRATED CIRCUIT STRUCTURES TO FORM INSUL...

SEMICONDUCTOR STRUCTURE WITH AIRGAP

SEMICONDUCTOR DEVICE

TECHNIQUE FOR PATTERNING ACTIVE REGIONS OF TRANSISTOR ELEMENTS IN A...

Semiconductor Device Having a Shallow Trench Isolation Structure an...

TRENCH ISOLATION FORMATION FROM THE SUBSTRATE BACK SIDE USING LAYER...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

AIR-CAVITY MODULE WITH ENHANCED DEVICE ISOLATION

Semiconductor Strips with Undercuts and Methods for Forming the Same

SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME

RF DEVICE WITH REDUCED SUBSTRATE COUPLING

SEMICONDUCTOR STRUCTURE WITH AIRGAP