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CPC
Y10S148/104

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/104Mask, movable

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Patents Grantslast 30 patents

Information Patent Grant
Mask for transferring a pattern for use in a semiconductor device a...
- Patent number 5,702,849
- Issue date Dec 30, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Hirofumi Sakata
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Mask for transferring a pattern for use in a semiconductor device a...
- Patent number 5,622,787
- Issue date Apr 22, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Hirofumi Sakata
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method for producing a semiconductor laser device
- Patent number 5,571,750
- Issue date Nov 5, 1996
- Sharp Kabushiki Kaisha
- Masanori Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rippled polysilicon surface capacitor electrode plate for high dens...
- Patent number 5,519,238
- Issue date May 21, 1996
- Industrial Technology Research Institute
- Chih-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating sub-half-micron trenches and holes
- Patent number 5,459,099
- Issue date Oct 17, 1995
- The United States of America as represented by the Secretary of the Navy
- David S. Y. Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricatring sub-half-micron trenches and holes
- Patent number 5,420,067
- Issue date May 30, 1995
- The United States of America as represented by the Secretary of the Navy
- David S. Y. Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor laser device
- Patent number 5,413,956
- Issue date May 9, 1995
- Sharp Kabushiki Kaisha
- Masanori Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing a wiring for a semiconductor device by a forwardly ta...
- Patent number 5,306,665
- Issue date Apr 26, 1994
- NEC Corporation
- Kazutaka Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growth method of III - V compound semiconductor
- Patent number 5,294,565
- Issue date Mar 15, 1994
- NEC Corporation
- Yasushi Shiraishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rippled polysilicon surface capacitor electrode plate for high dens...
- Patent number 5,213,992
- Issue date May 25, 1993
- Industrial Technology Research Institute
- Chih-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a buried crescent laser with air gap insulator
- Patent number 4,929,571
- Issue date May 29, 1990
- Mitsubishi Denki Kabushiki Kaisha
- Etsuji Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective NIPI doping super lattice contacts and other semiconducto...
- Patent number 4,883,770
- Issue date Nov 28, 1989
- Hewlett-Packard Company
- Gottfried H. Dohler
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for providing engineering changes to LSI PLAs
- Patent number 4,880,754
- Issue date Nov 14, 1989
- International Business Machines Corp.
- Anthony Correale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterning process
- Patent number 4,771,017
- Issue date Sep 13, 1988
- Spire Corporation
- Stephen P. Tobin
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of making implanted device regions in a semiconductor using...
- Patent number 4,675,981
- Issue date Jun 30, 1987
- Kabushiki Kaisha Toshiba
- Kiyomi Naruke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacture of interdigital periodic structure device
- Patent number 4,411,728
- Issue date Oct 25, 1983
- Agency of Industrial Science and Technology
- Tsunenori Sakamoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for preparing isolated junctions in thin-film semiconductor...
- Patent number 4,330,932
- Issue date May 25, 1982
- The United States of America as represented by the Secretary of the Navy
- Hayden Morris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3341360
- Patent number 3,341,360
- Issue date Sep 12, 1967
- C30 - CRYSTAL GROWTH
Information Patent Grant
3148085
- Patent number 3,148,085
- Issue date Sep 8, 1964
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Mask, movable

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Mask for transferring a pattern for use in a semiconductor device a...

Mask for transferring a pattern for use in a semiconductor device a...

Method for producing a semiconductor laser device

Rippled polysilicon surface capacitor electrode plate for high dens...

Method of fabricating sub-half-micron trenches and holes

Method of fabricatring sub-half-micron trenches and holes

Method for producing a semiconductor laser device

Manufacturing a wiring for a semiconductor device by a forwardly ta...

Crystal growth method of III - V compound semiconductor

Rippled polysilicon surface capacitor electrode plate for high dens...

Method of making a buried crescent laser with air gap insulator

Selective NIPI doping super lattice contacts and other semiconducto...

Method for providing engineering changes to LSI PLAs

Patterning process

Method of making implanted device regions in a semiconductor using...

Method for manufacture of interdigital periodic structure device

Process for preparing isolated junctions in thin-film semiconductor...

3341360

3148085