3341360

Information

• Patent Grant
• 3341360

• References
• Source

• Patent Number

  3,341,360

• Date Filed

  Not available

• Date Issued

  Tuesday, September 12, 1967
  57 years ago

• CPC

  • C30B29/40 - AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • C23C14/24 - Vacuum evaporation
  • C30B23/02 - Epitaxial-layer growth
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/104 - Mask, movable
  • Y10S148/169 - Vacuum deposition
  • Y10S438/935 - Gas flow control

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 252 - Compositions
  • 423 - Chemistry of inorganic compounds
  • 438 - Semiconductor device manufacturing: process