means for exerting mechanical stress on the crystal lattice of the channel region

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H01L29/7842

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7842means for exerting mechanical stress on the crystal lattice of the channel region

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Structure and method for providing line end extensions for fin-type...
- Patent number 12,218,239
- Issue date Feb 4, 2025
- Mosaid Technologies Incorporated
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate electrode for applying tensile...
- Patent number 12,198,987
- Issue date Jan 14, 2025
- Renesas Electronics Corporation
- Hirokazu Sayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistors (HEMTS) including a yttrium (Y)...
- Patent number 12,166,118
- Issue date Dec 10, 2024
- Qorvo US, Inc.
- Edward Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer structure and semiconductor device
- Patent number 12,159,940
- Issue date Dec 3, 2024
- FLOSFIA INC.
- Mitsuru Okigawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,148,803
- Issue date Nov 19, 2024
- Kabushiki Kaisha Toshiba
- Satoshi Akutsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure cutting process and structures formed thereby
- Patent number 12,132,050
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully strained channel
- Patent number 12,080,761
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF devices with nanotube particles for enhanced performance and met...
- Patent number 12,074,086
- Issue date Aug 27, 2024
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method therefor
- Patent number 12,068,409
- Issue date Aug 20, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 12,068,316
- Issue date Aug 20, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Yi-Wang Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface profile control in epitaxial structures for semiconductor...
- Patent number 12,068,414
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Winnie Victoria Wei-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut and fin trim isolation for advanced integrated circuit str...
- Patent number 12,057,492
- Issue date Aug 6, 2024
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation wall stressor structures to improve channel stress and th...
- Patent number 12,033,896
- Issue date Jul 9, 2024
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 12,021,082
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device including stressors
- Patent number 12,016,203
- Issue date Jun 18, 2024
- Samsung Display Co., Ltd.
- Junehwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF devices with nanotube particles for enhanced performance and met...
- Patent number 11,961,781
- Issue date Apr 16, 2024
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure cutting process and structures formed thereby
- Patent number 11,894,370
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin patterning for advanced integrated circuit structure fabrication
- Patent number 11,881,520
- Issue date Jan 23, 2024
- Intel Corporation
- Curtis Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 11,876,094
- Issue date Jan 16, 2024
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,855,206
- Issue date Dec 26, 2023
- Kabushiki Kaisha Toshiba
- Masataka Ino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-flexible transparent semiconductor film and preparation metho...
- Patent number 11,854,802
- Issue date Dec 26, 2023
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF...
- Yukun Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact on FinFET
- Patent number 11,854,898
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing a strained semiconductor device and corre...
- Patent number 11,837,558
- Issue date Dec 5, 2023
- STMicroelectronics S.r.l.
- Santo Alessandro Smerzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Core-shell nanostructures for semiconductor devices
- Patent number 11,824,089
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Yi Peng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES FOR USE IN HIGH-PRESSURE ENVIRONMENTS
- Publication number 20240395934
- Publication date Nov 28, 2024
- The Boeing Company
- Leora Peltz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY STRAINED CHANNEL
- Publication number 20240371941
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOBILITY ENHANCEMENT BY SOURCE AND DRAIN STRESS LAYER OR IMPLANTATI...
- Publication number 20240373646
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Hui-Hsien WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Cutting Process and Structures Formed Thereby
- Publication number 20240371869
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE PROFILE CONTROL IN EPITAXIAL STRUCTURES FOR SEMICONDUCTOR...
- Publication number 20240363751
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Winnie Victoria Wei-Ning CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20240332399
- Publication date Oct 3, 2024
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF DEVICES WITH NANOTUBE PARTICLES FOR ENHANCED PERFORMANCE AND MET...
- Publication number 20240234241
- Publication date Jul 11, 2024
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTUR...
- Publication number 20240186403
- Publication date Jun 6, 2024
- Intel Corporation
- Jeffrey S. LEIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SOURCE/DRAIN EPITAXIAL LAYER OF FDSOI MOSFET
- Publication number 20240170344
- Publication date May 23, 2024
- Shanghai Huali Integrated Circuit Corporation
- Jiaqi HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Cutting Process and Structures Formed Thereby
- Publication number 20240113112
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240047567
- Publication date Feb 8, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Core-Shell Nanostructures For Semiconductor Devices
- Publication number 20230411455
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yi PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH STRAINED CHANNEL
- Publication number 20230411523
- Publication date Dec 21, 2023
- International Business Machines Corporation
- SHOGO MOCHIZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUC...
- Publication number 20230387298
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN-YEN PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISLOCATION ENHANCED TRANSISTOR DEVICE AND METHOD
- Publication number 20230335642
- Publication date Oct 19, 2023
- Micron Technology, Inc.
- Toshihiko Miyashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS INCORPORATION IN SEMICONDUCTOR DEVICES
- Publication number 20230299199
- Publication date Sep 21, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE...
- Publication number 20230299203
- Publication date Sep 21, 2023
- MOSAID TECHNOLOGIES INCORPORATED
- Shao-Ming YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) INCLUDING A YTTRIUM (Y)...
- Publication number 20230223467
- Publication date Jul 13, 2023
- Qorvo US, Inc.
- Edward Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...
- Publication number 20230187447
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLAD...
- Publication number 20230170388
- Publication date Jun 1, 2023
- Daedalus Prime LLC
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230091870
- Publication date Mar 23, 2023
- Kabushiki Kaisha Toshiba
- Satoshi AKUTSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS INCLUDING A STRESS LINER
- Publication number 20230063900
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220384431
- Publication date Dec 1, 2022
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Yi-Wang Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE PROVIDING METAL WORK...
- Publication number 20220376047
- Publication date Nov 24, 2022
- ATOMERA INCORPORATED
- ROBERT J. MEARS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE PROFILE CONTROL IN EPITAXIAL STRUCTURES FOR SEMICONDUCTOR...
- Publication number 20220352370
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Winnie Victoria Wei Ning CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION WALL STRESSOR STRUCTURES TO IMPROVE CHANNEL STRESS AND TH...
- Publication number 20220352029
- Publication date Nov 3, 2022
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super-Flexible Transparent Semiconductor Film and Preparation Metho...
- Publication number 20220310384
- Publication date Sep 29, 2022
- Suzhou Institute of Nano-Tech and Nano-Bionics (Sinano), Chinese Academy of S...
- Yukun Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220262952
- Publication date Aug 18, 2022
- Kabushiki Kaisha Toshiba
- Masataka INO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE...
- Publication number 20220223727
- Publication date Jul 14, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS

means for exerting mechanical stress on the crystal lattice of the channel region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Structure and method for providing line end extensions for fin-type...

Gate line plug structures for advanced integrated circuit structure...

Semiconductor device including gate electrode for applying tensile...

Plugs for interconnect lines for advanced integrated circuit struct...

High electron mobility transistors (HEMTS) including a yttrium (Y)...

Multilayer structure and semiconductor device

Semiconductor device

Contact over active gate structures for advanced integrated circuit...

Semiconductor structure cutting process and structures formed thereby

Fully strained channel

RF devices with nanotube particles for enhanced performance and met...

Semiconductor structure and manufacturing method therefor

Semiconductor device and method of forming the same

Interface profile control in epitaxial structures for semiconductor...

Gate cut and fin trim isolation for advanced integrated circuit str...

Isolation wall stressor structures to improve channel stress and th...

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Display device including stressors

RF devices with nanotube particles for enhanced performance and met...

Dual metal gate structure having portions of metal gate layers in c...

Heterogeneous metal line compositions for advanced integrated circu...

Trench contact structures for advanced integrated circuit structure...

Semiconductor structure cutting process and structures formed thereby

Fin patterning for advanced integrated circuit structure fabrication

Method for fabricating semiconductor device

Semiconductor device

Super-flexible transparent semiconductor film and preparation metho...

Wrap-around contact on FinFET

Process for manufacturing a strained semiconductor device and corre...

Core-shell nanostructures for semiconductor devices

Patents Applicationslast 30 patents

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

SEMICONDUCTOR DEVICES FOR USE IN HIGH-PRESSURE ENVIRONMENTS

FULLY STRAINED CHANNEL

MOBILITY ENHANCEMENT BY SOURCE AND DRAIN STRESS LAYER OR IMPLANTATI...

Semiconductor Structure Cutting Process and Structures Formed Thereby

INTERFACE PROFILE CONTROL IN EPITAXIAL STRUCTURES FOR SEMICONDUCTOR...

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

RF DEVICES WITH NANOTUBE PARTICLES FOR ENHANCED PERFORMANCE AND MET...

DUAL METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTUR...

METHOD FOR MANUFACTURING SOURCE/DRAIN EPITAXIAL LAYER OF FDSOI MOSFET

Semiconductor Structure Cutting Process and Structures Formed Thereby

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Core-Shell Nanostructures For Semiconductor Devices

VERTICAL FIELD EFFECT TRANSISTOR WITH STRAINED CHANNEL

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUC...

DISLOCATION ENHANCED TRANSISTOR DEVICE AND METHOD

STRESS INCORPORATION IN SEMICONDUCTOR DEVICES

STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE...

HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) INCLUDING A YTTRIUM (Y)...

ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...

CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLAD...

SEMICONDUCTOR DEVICE

BIPOLAR JUNCTION TRANSISTORS INCLUDING A STRESS LINER

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE PROVIDING METAL WORK...

INTERFACE PROFILE CONTROL IN EPITAXIAL STRUCTURES FOR SEMICONDUCTOR...

ISOLATION WALL STRESSOR STRUCTURES TO IMPROVE CHANNEL STRESS AND TH...

Super-Flexible Transparent Semiconductor Film and Preparation Metho...

SEMICONDUCTOR DEVICE

STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE...