means for exerting mechanical stress on the crystal lattice of the channel region

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H01L29/7842

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7842means for exerting mechanical stress on the crystal lattice of the channel region

Industries

Patents Grantslast 30 patents

Information Patent Grant
RF devices with nanotube particles for enhanced performance and met...
- Patent number 11,961,781
- Issue date Apr 16, 2024
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure cutting process and structures formed thereby
- Patent number 11,894,370
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin patterning for advanced integrated circuit structure fabrication
- Patent number 11,881,520
- Issue date Jan 23, 2024
- Intel Corporation
- Curtis Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 11,876,094
- Issue date Jan 16, 2024
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,855,206
- Issue date Dec 26, 2023
- Kabushiki Kaisha Toshiba
- Masataka Ino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-flexible transparent semiconductor film and preparation metho...
- Patent number 11,854,802
- Issue date Dec 26, 2023
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF...
- Yukun Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact on FinFET
- Patent number 11,854,898
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing a strained semiconductor device and corre...
- Patent number 11,837,558
- Issue date Dec 5, 2023
- STMicroelectronics S.r.l.
- Santo Alessandro Smerzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Core-shell nanostructures for semiconductor devices
- Patent number 11,824,089
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Yi Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut and fin trim isolation for advanced integrated circuit str...
- Patent number 11,799,015
- Issue date Oct 24, 2023
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,791,384
- Issue date Oct 17, 2023
- Fujitsu Limited
- Junya Yaita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method for the semiconduc...
- Patent number 11,777,031
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for providing line end extensions for fin-type...
- Patent number 11,721,761
- Issue date Aug 8, 2023
- Mosaid Technologies Incorporated
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors including a stress liner
- Patent number 11,721,722
- Issue date Aug 8, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress incorporation in semiconductor devices
- Patent number 11,699,755
- Issue date Jul 11, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor comprising a channel placed under shear strain and fabri...
- Patent number 11,688,811
- Issue date Jun 27, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Emmanuel Augendre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures and methods of forming thereof
- Patent number 11,664,456
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,664,439
- Issue date May 30, 2023
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin cut and fin trim isolation for advanced integrated circuit stru...
- Patent number 11,646,359
- Issue date May 9, 2023
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation for advanced integrated circuit structure fabrication
- Patent number 11,640,985
- Issue date May 2, 2023
- Intel Corporation
- Michael L. Hattendorf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating CMOS FinFETs by selectively etching a straine...
- Patent number 11,581,406
- Issue date Feb 14, 2023
- Daedalus Prime LLC
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 11,581,420
- Issue date Feb 14, 2023
- Intel Corporation
- Andrew W. Veoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,581,419
- Issue date Feb 14, 2023
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 11,574,907
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device
- Patent number 11,552,231
- Issue date Jan 10, 2023
- Samsung Display Co., Ltd.
- Mugyeom Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming stressor, semiconductor device having stressor,...
- Patent number 11,538,938
- Issue date Dec 27, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Wei Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having strain-inducing anchors and a strain-enhancing su...
- Patent number 11,527,446
- Issue date Dec 13, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Structure Cutting Process and Structures Formed Thereby
- Publication number 20240113112
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240047567
- Publication date Feb 8, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Core-Shell Nanostructures For Semiconductor Devices
- Publication number 20230411455
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yi PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH STRAINED CHANNEL
- Publication number 20230411523
- Publication date Dec 21, 2023
- International Business Machines Corporation
- SHOGO MOCHIZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUC...
- Publication number 20230387298
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN-YEN PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISLOCATION ENHANCED TRANSISTOR DEVICE AND METHOD
- Publication number 20230335642
- Publication date Oct 19, 2023
- Micron Technology, Inc.
- Toshihiko Miyashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS INCORPORATION IN SEMICONDUCTOR DEVICES
- Publication number 20230299199
- Publication date Sep 21, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE...
- Publication number 20230299203
- Publication date Sep 21, 2023
- MOSAID TECHNOLOGIES INCORPORATED
- Shao-Ming YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) INCLUDING A YTTRIUM (Y)...
- Publication number 20230223467
- Publication date Jul 13, 2023
- Qorvo US, Inc.
- Edward Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...
- Publication number 20230187447
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLAD...
- Publication number 20230170388
- Publication date Jun 1, 2023
- Daedalus Prime LLC
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230091870
- Publication date Mar 23, 2023
- Kabushiki Kaisha Toshiba
- Satoshi AKUTSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS INCLUDING A STRESS LINER
- Publication number 20230063900
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220384431
- Publication date Dec 1, 2022
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Yi-Wang Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE PROVIDING METAL WORK...
- Publication number 20220376047
- Publication date Nov 24, 2022
- ATOMERA INCORPORATED
- ROBERT J. MEARS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE PROFILE CONTROL IN EPITAXIAL STRUCTURES FOR SEMICONDUCTOR...
- Publication number 20220352370
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Winnie Victoria Wei Ning CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION WALL STRESSOR STRUCTURES TO IMPROVE CHANNEL STRESS AND TH...
- Publication number 20220352029
- Publication date Nov 3, 2022
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super-Flexible Transparent Semiconductor Film and Preparation Metho...
- Publication number 20220310384
- Publication date Sep 29, 2022
- Suzhou Institute of Nano-Tech and Nano-Bionics (Sinano), Chinese Academy of S...
- Yukun Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220262952
- Publication date Aug 18, 2022
- Kabushiki Kaisha Toshiba
- Masataka INO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE...
- Publication number 20220223727
- Publication date Jul 14, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUC...
- Publication number 20220181495
- Publication date Jun 9, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN-YEN PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CORE-SHELL NANOSTRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20220149155
- Publication date May 12, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yi PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER STRUCTURE AND SEMICONDUCTOR DEVICE
- Publication number 20220140145
- Publication date May 5, 2022
- FLOSFIA INC.
- Mitsuru OKIGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20220077144
- Publication date Mar 10, 2022
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS INCORPORATION IN SEMICONDUCTOR DEVICES
- Publication number 20220059698
- Publication date Feb 24, 2022
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220013642
- Publication date Jan 13, 2022
- Fujitsu Limited
- Junya YAITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
- Publication number 20210384341
- Publication date Dec 9, 2021
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tuning Tensile Strain on FinFET
- Publication number 20210343716
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR MANUFACTURING A STRAINED SEMICONDUCTOR DEVICE AND CORRE...
- Publication number 20210335730
- Publication date Oct 28, 2021
- STMicroelectronics S.r.l.
- Santo Alessandro SMERZI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE...
- Publication number 20210313467
- Publication date Oct 7, 2021
- RENESAS ELECTRONICS CORPORATION
- Hirokazu SAYAMA
- H01 - BASIC ELECTRIC ELEMENTS

means for exerting mechanical stress on the crystal lattice of the channel region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

RF devices with nanotube particles for enhanced performance and met...

Dual metal gate structure having portions of metal gate layers in c...

Heterogeneous metal line compositions for advanced integrated circu...

Trench contact structures for advanced integrated circuit structure...

Semiconductor structure cutting process and structures formed thereby

Fin patterning for advanced integrated circuit structure fabrication

Method for fabricating semiconductor device

Semiconductor device

Super-flexible transparent semiconductor film and preparation metho...

Wrap-around contact on FinFET

Process for manufacturing a strained semiconductor device and corre...

Core-shell nanostructures for semiconductor devices

Gate cut and fin trim isolation for advanced integrated circuit str...

Semiconductor device

Semiconductor structure and manufacturing method for the semiconduc...

Structure and method for providing line end extensions for fin-type...

Bipolar junction transistors including a stress liner

Stress incorporation in semiconductor devices

Transistor comprising a channel placed under shear strain and fabri...

Semiconductor structures and methods of forming thereof

Trench contact structures for advanced integrated circuit structure...

Fin cut and fin trim isolation for advanced integrated circuit stru...

Trench isolation for advanced integrated circuit structure fabrication

Method of fabricating CMOS FinFETs by selectively etching a straine...

Contact over active gate structures for advanced integrated circuit...

Heterogeneous metal line compositions for advanced integrated circu...

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Display device

Method for forming stressor, semiconductor device having stressor,...

Transistor having strain-inducing anchors and a strain-enhancing su...

Patents Applicationslast 30 patents

Semiconductor Structure Cutting Process and Structures Formed Thereby

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Core-Shell Nanostructures For Semiconductor Devices

VERTICAL FIELD EFFECT TRANSISTOR WITH STRAINED CHANNEL

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUC...

DISLOCATION ENHANCED TRANSISTOR DEVICE AND METHOD

STRESS INCORPORATION IN SEMICONDUCTOR DEVICES

STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE...

HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) INCLUDING A YTTRIUM (Y)...

ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...

CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLAD...

SEMICONDUCTOR DEVICE

BIPOLAR JUNCTION TRANSISTORS INCLUDING A STRESS LINER

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE PROVIDING METAL WORK...

INTERFACE PROFILE CONTROL IN EPITAXIAL STRUCTURES FOR SEMICONDUCTOR...

ISOLATION WALL STRESSOR STRUCTURES TO IMPROVE CHANNEL STRESS AND TH...

Super-Flexible Transparent Semiconductor Film and Preparation Metho...

SEMICONDUCTOR DEVICE

STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUC...

CORE-SHELL NANOSTRUCTURES FOR SEMICONDUCTOR DEVICES

MULTILAYER STRUCTURE AND SEMICONDUCTOR DEVICE

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

STRESS INCORPORATION IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

Tuning Tensile Strain on FinFET

PROCESS FOR MANUFACTURING A STRAINED SEMICONDUCTOR DEVICE AND CORRE...

SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE...