Nanosized electrodes

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H01L29/413

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/413Nanosized electrodes

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Two-dimensional material-based wiring conductive layer contact stru...
- Patent number 12,142,697
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Minsu Seol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold adjustment for quantum dot array devices with metal sourc...
- Patent number 12,107,144
- Issue date Oct 1, 2024
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor, integrated circuit, and manufacturing method of transistor
- Patent number 12,021,154
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Marcus Johannes Henricus Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superconductor gate semiconductor field-effect transistor
- Patent number 12,009,414
- Issue date Jun 11, 2024
- International Business Machines Corporation
- Eunjung Cha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implant defined nanorod in a suspended Majorana fermion device
- Patent number 11,948,985
- Issue date Apr 2, 2024
- International Business Machines Corporation
- Steven J. Holmes
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Selective shrink for contact trench
- Patent number 11,935,931
- Issue date Mar 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 11,894,379
- Issue date Feb 6, 2024
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory devices with different doping types
- Patent number 11,856,761
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional material-based wiring conductive layer contact stru...
- Patent number 11,830,952
- Issue date Nov 28, 2023
- Samsung Electronics Co., Ltd.
- Minsu Seol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making nanosheet fringe capacitors or MEMS sensors with d...
- Patent number 11,769,797
- Issue date Sep 26, 2023
- NXP B.V.
- Tushar Praful Merchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Miniature field plate T-gate and method of fabricating the same
- Patent number 11,764,271
- Issue date Sep 19, 2023
- HRL Laboratories, LLC
- Joel C. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical/optical multimodal sensor using multi-functional 3D nano...
- Patent number 11,719,664
- Issue date Aug 8, 2023
- Korea Advanced Institute of Science and Technology
- Yeon Sik Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire-based sensors with integrated fluid conductance measuremen...
- Patent number 11,692,965
- Issue date Jul 4, 2023
- FemtoDx, Inc.
- Pritiraj Mohanty
- G01 - MEASURING TESTING
Information Patent Grant
Transistor, integrated circuit, and manufacturing method of transistor
- Patent number 11,605,740
- Issue date Mar 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Marcus Johannes Henricus Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Four point semiconductor nanowire-based sensors and related methods
- Patent number 11,579,114
- Issue date Feb 14, 2023
- FemtoDx, Inc.
- Pritiraj Mohanty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High optical transparent two-dimensional electronic conducting syst...
- Patent number 11,515,057
- Issue date Nov 29, 2022
- Purdue Research Foundation
- Muhammad Ashraful Alam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench gate structure with specific...
- Patent number 11,508,836
- Issue date Nov 22, 2022
- Denso Corporation
- Masakazu Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide semiconductor thin film transistor and method of fabricating...
- Patent number 11,374,129
- Issue date Jun 28, 2022
- University-Industry Cooperation Group of Kyung Hee University
- Jin Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 11,367,723
- Issue date Jun 21, 2022
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D directed self-assembly for nanostructures
- Patent number 11,342,427
- Issue date May 24, 2022
- Tokyo Electron Limited
- Anton deVilliers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implant defined nanorod in a suspended Majorana fermion device
- Patent number 11,316,022
- Issue date Apr 26, 2022
- International Business Machines Corporation
- Steven J. Holmes
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Miniature field plate T-gate and method of fabricating the same
- Patent number 11,302,786
- Issue date Apr 12, 2022
- HRL Laboratories LLC
- Joel C. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and formation method thereof
- Patent number 11,302,789
- Issue date Apr 12, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- ChihCheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold adjustment for quantum dot array devices with metal sourc...
- Patent number 11,264,480
- Issue date Mar 1, 2022
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming isolation layer
- Patent number 11,227,788
- Issue date Jan 18, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Teng-Chun Tsai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Composite transparent conductors and methods of forming the same
- Patent number 11,224,130
- Issue date Jan 11, 2022
- Cambrios Film Solutions Corporation
- David Jones
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Integrated circuit heat dissipation using nanostructures
- Patent number 11,152,495
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Alan B. Botula
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Integrated circuit heat dissipation using nanostructures
- Patent number 11,081,572
- Issue date Aug 3, 2021
- International Business Machines Corporation
- Alan B. Botula
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-planar field effect transistor devices with low-resistance meta...
- Patent number 11,049,935
- Issue date Jun 29, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar field effect transistor devices with low-resistance meta...
- Patent number 11,038,015
- Issue date Jun 15, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
- Publication number 20240321995
- Publication date Sep 26, 2024
- KIOXIA Corporation
- Masaya TODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR
- Publication number 20240304730
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Marcus Johannes Henricus Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACCUMULATION GATE FOR QUANTUM DEVICE
- Publication number 20240204089
- Publication date Jun 20, 2024
- NEDERLANDSE ORGANISATIE VOOR TOEGEPAST- NATUURWETENSCHAPPELIJK ONDERZOEK TNO
- Nodar SAMKHARADZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barrier Structure for Sub-100 Nanometer Gate Length Devices
- Publication number 20240105824
- Publication date Mar 28, 2024
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT DOPING TYPES
- Publication number 20240090210
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL MATERIAL-BASED WIRING CONDUCTIVE LAYER CONTACT STRU...
- Publication number 20240038903
- Publication date Feb 1, 2024
- Samsung Electronics Co., Ltd.
- Minsu SEOL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FIELD EFFECT TRANSISTOR
- Publication number 20230378265
- Publication date Nov 23, 2023
- Murata Manufacturing Co., Ltd.
- Hiroki SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE SCALING BY ISOLATION ENHANCEMENT
- Publication number 20230335645
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES WITH UNIFORM AND CONFORMAL GATE...
- Publication number 20230290843
- Publication date Sep 14, 2023
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES INCLUDING PILLARS INCLUDING A MEMORY MATERIAL, A...
- Publication number 20230276624
- Publication date Aug 31, 2023
- Micron Technology, Inc.
- Pankaj Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230238383
- Publication date Jul 27, 2023
- Samsung Electronics Co., Ltd.
- JUNG-GIL YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR
- Publication number 20230187562
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Marcus Johannes Henricus Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERCONDUCTOR GATE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
- Publication number 20230178641
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Eunjung Cha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIRING INCLUDING GRAPHENE LAYER AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230079680
- Publication date Mar 16, 2023
- Samsung Electronics Co., Ltd.
- Keunwook SHIN
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230028402
- Publication date Jan 26, 2023
- SEIKO EPSON CORPORATION
- Hiroyuki Shimada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT DOPING TYPES
- Publication number 20220359546
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-FORMING NANOGAP METHOD AND DEVICE
- Publication number 20220336597
- Publication date Oct 20, 2022
- King Abdullah University of Science and Technology
- Thomas D. ANTHOPOULOS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220328483
- Publication date Oct 13, 2022
- Samsung Electronics Co., Ltd.
- JUNG-GIL YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Making Nanosheet Fringe Capacitors or MEMS Sensors with D...
- Publication number 20220310786
- Publication date Sep 29, 2022
- NXP B.V.
- Tushar Praful Merchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF
- Publication number 20220238665
- Publication date Jul 28, 2022
- Changxin Memory Technologies, Inc.
- ChihCheng LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANT DEFINED NANOROD IN A SUSPENDED MAJORANA FERMION DEVICE
- Publication number 20220238663
- Publication date Jul 28, 2022
- International Business Machines Corporation
- Steven J. Holmes
- B82 - NANO-TECHNOLOGY
Information Patent Application
Miniature Field Plate T-Gate and Method of Fabricating the Same
- Publication number 20220190123
- Publication date Jun 16, 2022
- HRL LABORATORIES, LLC
- Joel C. WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD ADJUSTMENT FOR QUANTUM DOT ARRAY DEVICES WITH METAL SOURC...
- Publication number 20220140110
- Publication date May 5, 2022
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220077289
- Publication date Mar 10, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Qu Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Shrink for Contact Trench
- Publication number 20210384306
- Publication date Dec 9, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR
- Publication number 20210376162
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Marcus Johannes Henricus Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL MATERIAL-BASED WIRING CONDUCTIVE LAYER CONTACT STRU...
- Publication number 20210305378
- Publication date Sep 30, 2021
- Samsung Electronics Co., Ltd.
- Minsu SEOL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANT DEFINED NANOROD IN A SUSPENDED MAJORANA FERMION DEVICE
- Publication number 20210151575
- Publication date May 20, 2021
- International Business Machines Corporation
- Steven J. Holmes
- B82 - NANO-TECHNOLOGY
Information Patent Application
HIGH OPTICAL TRANSPARENT TWO-DIMENSIONAL ELECTRONIC CONDUCTING SYST...
- Publication number 20210118588
- Publication date Apr 22, 2021
- Purdue Research Foundation
- Muhammad Ashraful ALAM
- B82 - NANO-TECHNOLOGY
Information Patent Application
3D Directed Self-Assembly for Nanostructures
- Publication number 20210104609
- Publication date Apr 8, 2021
- TOKYO ELECTRON LIMITED
- Anton deVilliers
- H01 - BASIC ELECTRIC ELEMENTS

Nanosized electrodes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Two-dimensional material-based wiring conductive layer contact stru...

Threshold adjustment for quantum dot array devices with metal sourc...

Transistor, integrated circuit, and manufacturing method of transistor

Superconductor gate semiconductor field-effect transistor

Ion implant defined nanorod in a suspended Majorana fermion device

Selective shrink for contact trench

Semiconductor devices and method of manufacturing the same

Semiconductor memory devices with different doping types

Two-dimensional material-based wiring conductive layer contact stru...

Method of making nanosheet fringe capacitors or MEMS sensors with d...

Miniature field plate T-gate and method of fabricating the same

Electrical/optical multimodal sensor using multi-functional 3D nano...

Nanowire-based sensors with integrated fluid conductance measuremen...

Transistor, integrated circuit, and manufacturing method of transistor

Four point semiconductor nanowire-based sensors and related methods

High optical transparent two-dimensional electronic conducting syst...

Semiconductor device including trench gate structure with specific...

Oxide semiconductor thin film transistor and method of fabricating...

Semiconductor devices and method of manufacturing the same

3D directed self-assembly for nanostructures

Ion implant defined nanorod in a suspended Majorana fermion device

Miniature field plate T-gate and method of fabricating the same

Semiconductor structure and formation method thereof

Threshold adjustment for quantum dot array devices with metal sourc...

Method of forming isolation layer

Composite transparent conductors and methods of forming the same

Integrated circuit heat dissipation using nanostructures

Integrated circuit heat dissipation using nanostructures

Non-planar field effect transistor devices with low-resistance meta...

Non-planar field effect transistor devices with low-resistance meta...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE

TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR

ACCUMULATION GATE FOR QUANTUM DEVICE

Barrier Structure for Sub-100 Nanometer Gate Length Devices

SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT DOPING TYPES

TWO-DIMENSIONAL MATERIAL-BASED WIRING CONDUCTIVE LAYER CONTACT STRU...

STRUCTURE AND FIELD EFFECT TRANSISTOR

DEVICE SCALING BY ISOLATION ENHANCEMENT

CONTACT OVER ACTIVE GATE STRUCTURES WITH UNIFORM AND CONFORMAL GATE...

ELECTRONIC DEVICES INCLUDING PILLARS INCLUDING A MEMORY MATERIAL, A...

SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME

TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR

SUPERCONDUCTOR GATE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

WIRING INCLUDING GRAPHENE LAYER AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT DOPING TYPES

SELF-FORMING NANOGAP METHOD AND DEVICE

SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME

Method of Making Nanosheet Fringe Capacitors or MEMS Sensors with D...

SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF

ION IMPLANT DEFINED NANOROD IN A SUSPENDED MAJORANA FERMION DEVICE

Miniature Field Plate T-Gate and Method of Fabricating the Same

THRESHOLD ADJUSTMENT FOR QUANTUM DOT ARRAY DEVICES WITH METAL SOURC...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Selective Shrink for Contact Trench

TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR

TWO-DIMENSIONAL MATERIAL-BASED WIRING CONDUCTIVE LAYER CONTACT STRU...

ION IMPLANT DEFINED NANOROD IN A SUSPENDED MAJORANA FERMION DEVICE

HIGH OPTICAL TRANSPARENT TWO-DIMENSIONAL ELECTRONIC CONDUCTING SYST...

3D Directed Self-Assembly for Nanostructures