Membership
Tour
Register
Log in
Narrow masking
Follow
Industry
CPC
Y10S148/111
This industry / category may be too specific. Please go to a parent level for more data
Parent Industries
Y
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10
USPC classification
Y10S
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00
Metal treatment
Current Industry
Y10S148/111
Narrow masking
Industries
Overview
Organizations
People
Information
Impact
Please log in for detailed analytics
Patents Grants
last 30 patents
Information
Patent Grant
Fabrication process of compound semiconductor device comprising L-s...
Patent number
5,432,126
Issue date
Jul 11, 1995
NEC Corporation
Hirokazu Oikawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for manufacturing integrated circuits with very narrow elec...
Patent number
5,399,525
Issue date
Mar 21, 1995
Thomson-CSF Semiconducteurs Specifiques
Pierre Blanchard
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing semiconductor device employing oxide sidewalls
Patent number
5,366,913
Issue date
Nov 22, 1994
Rohm Co., Ltd.
Hironobu Nakao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of making a single electrode level CCD
Patent number
5,314,836
Issue date
May 24, 1994
Eastman Kodak Company
James P. Lavine
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of making CCD having a single level electrode of single crys...
Patent number
5,302,544
Issue date
Apr 12, 1994
Eastman Kodak Company
James P. Lavine
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for producing a non-volatile memory cell using spacers
Patent number
5,256,584
Issue date
Oct 26, 1993
Commissariat a l'Energie Atomique
Joel Hartmann
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming nanometer-scale trenches and holes
Patent number
5,246,879
Issue date
Sep 21, 1993
The United States of America as represented by the Secretary of the Navy
David S. Y. Hsu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Optimizing doping control in short channel MOS
Patent number
5,215,937
Issue date
Jun 1, 1993
Advanced Micro Devices, Inc.
Darrell M. Erb
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for defining and forming an active region of very limited d...
Patent number
5,130,272
Issue date
Jul 14, 1992
SGS-Thomson Microelectronics S.r.l.
Giuseppe Ferla
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of nanometer lithography
Patent number
5,110,760
Issue date
May 5, 1992
The United States of America as represented by the Secretary of the Navy
David S. Y. Hsu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Device fabrication
Patent number
5,106,764
Issue date
Apr 21, 1992
AT&T Bell Laboratories
Lloyd R. Harriott
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Fabricating a narrow width EEPROM with single diffusion electrode f...
Patent number
5,094,968
Issue date
Mar 10, 1992
Atmel Corporation
Steven J. Schumann
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of producing a bipolar transistor with spacers
Patent number
5,063,167
Issue date
Nov 5, 1991
Mitsubishi Denki Kabushiki Kaisha
Teruyuki Shimura
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for producing a monolithically integrated optoelectronic device
Patent number
5,001,080
Issue date
Mar 19, 1991
Fujitsu Limited of 1015
Osamu Wada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of making a self-aligned field-effect transistor by the use...
Patent number
4,975,382
Issue date
Dec 4, 1990
Rohm Co., Ltd.
Satoru Takasugi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device
Patent number
4,967,254
Issue date
Oct 30, 1990
Mitsubishi Denki Kabushiki Kaisha
Teruyuki Shimura
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of fabricating semiconductor devices with sub-micron linewidths
Patent number
4,963,501
Issue date
Oct 16, 1990
Rockwell International Corporation
Frank J. Ryan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
MESFET process employing dummy electrodes and resist reflow
Patent number
4,902,646
Issue date
Feb 20, 1990
Mitsubishi Denki Kabushiki Kaisha
Hirofumi Nakano
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing a DMOS
Patent number
4,879,254
Issue date
Nov 7, 1989
Nippondenso Co., Ltd.
Yukio Tsuzuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of making travelling wave semi-conductor laser
Patent number
4,851,368
Issue date
Jul 25, 1989
Cornell Research Foundation, Inc.
Abbas Behfar-Rad
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for forming sub-micrometer patterns using silylation of res...
Patent number
4,803,181
Issue date
Feb 7, 1989
International Business Machines Corporation
Peter L. Buchmann
G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information
Patent Grant
Methods for producing an aperture in a surface
Patent number
4,759,822
Issue date
Jul 26, 1988
TriQuint Semiconductor Inc.
William A. Vetanen
G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information
Patent Grant
Two mask technique for planarized trench oxide isolation of integra...
Patent number
4,753,901
Issue date
Jun 28, 1988
NCR Corporation
Daniel L. Ellsworth
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of fabrication of gates for integrated circuits
Patent number
4,738,683
Issue date
Apr 19, 1988
Thomson-CSF
Pierre Blanchard
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Self-aligned sidewall gate IGFET
Patent number
4,729,002
Issue date
Mar 1, 1988
Semiconductor Energy Laboratory Co., Ltd.
Shunpei Yamazaki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Depletion mode short channel IGFET
Patent number
4,725,871
Issue date
Feb 16, 1988
Semiconductor Energy Laboratory Co., Ltd.
Shunpei Yamazaki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Self-aligned dual-gate igfet assembly
Patent number
4,721,988
Issue date
Jan 26, 1988
Semiconductor Energy Laboratory Co., Ltd.
Shunpei Yamazaki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Optoelectronic integrated circuit
Patent number
4,719,498
Issue date
Jan 12, 1988
Fujitsu Limited
Osamu Wada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Sidewall multiple-gate IGFET
Patent number
4,717,941
Issue date
Jan 5, 1988
Semiconductor Energy Laboratory Co., Ltd.
Shunpei Yamazaki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Sidewall gate IGFET
Patent number
4,654,680
Issue date
Mar 31, 1987
Semiconductor Energy Laboratory Co., Ltd.
Shunpei Yamazaki
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents