Nitride compounds

Industry

CPC
H01L29/2003

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/2003Nitride compounds

Industries

Patents Grantslast 30 patents

Information Patent Grant
III-nitride-based semiconductor devices on patterned substrates and...
- Patent number 12,154,864
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based field effect transistors
- Patent number 12,154,903
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,154,968
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,154,980
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic contacts for a high-electron-mobility transistor
- Patent number 12,154,961
- Issue date Nov 26, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Samuel Troughton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure including multi-level field plate and method of forming t...
- Patent number 12,154,956
- Issue date Nov 26, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an ohmic contact for a HEMT device
- Patent number 12,154,967
- Issue date Nov 26, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,154,981
- Issue date Nov 26, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN/two-dimensional AlN heterojunction rectifier on silicon substra...
- Patent number 12,154,990
- Issue date Nov 26, 2024
- South China University of Technology
- Wenliang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device that includes a conductive member and an elect...
- Patent number 12,154,966
- Issue date Nov 26, 2024
- Kabushiki Kaisha Toshiba
- Hiroshi Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor
- Patent number 12,154,982
- Issue date Nov 26, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Gökhan Atmaca
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,155,009
- Issue date Nov 26, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of obtaining a smooth surface with epitaxial lateral overgrowth
- Patent number 12,146,237
- Issue date Nov 19, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor layer structure
- Patent number 12,148,821
- Issue date Nov 19, 2024
- Epinovatech AB
- Martin Andreas Olsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,148,713
- Issue date Nov 19, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method for manufacturing semiconductor device...
- Patent number 12,148,799
- Issue date Nov 19, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Double-channel HEMT device and manufacturing method thereof
- Patent number 12,148,823
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GAN) three-dimensional integrated circuit technology
- Patent number 12,148,747
- Issue date Nov 19, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,148,801
- Issue date Nov 19, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Chuan He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with source-connected field plates
- Patent number 12,148,820
- Issue date Nov 19, 2024
- NXP B.V.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material structure for low thermal resistance silicon-based gallium...
- Patent number 12,142,643
- Issue date Nov 12, 2024
- Xidian University
- Jincheng Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor, semiconductor device, and method for manufac...
- Patent number 12,142,646
- Issue date Nov 12, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,142,644
- Issue date Nov 12, 2024
- Panasonic Holdings Corporation
- Daisuke Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium Nitride high-electron mobility transistors with p-type laye...
- Patent number 12,142,674
- Issue date Nov 12, 2024
- Wolfspeed, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,142,675
- Issue date Nov 12, 2024
- Mitsubishi Electric Corporation
- Takuma Nanjo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,677
- Issue date Nov 12, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Yusuke Kanda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field assisted interfacial diffusion doping through heterostructure...
- Patent number 12,142,642
- Issue date Nov 12, 2024
- Lawrence Livermore National Security, LLC
- Joel Basile Varley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High hole mobility transistor (HHMT) and method of manufacturing th...
- Patent number 12,136,669
- Issue date Nov 5, 2024
- GUANGDONG ZHINENG TECHNOLOGIES, CO. LTD.
- Zilan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Coupled guard rings for edge termination
- Patent number 12,136,645
- Issue date Nov 5, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure including alternating sets of channel and barrier l...
- Patent number 12,136,668
- Issue date Nov 5, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER SEMICONDUCTOR DEVICE COMPRISING A WIDE BANDGAP SUBSTRATE
- Publication number 20240395804
- Publication date Nov 28, 2024
- Cambridge GaN Devices Limited
- Florin UDREA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR HETEROSTRUCTURES WITH SCANDIUM III-NITRIDE LAYER
- Publication number 20240395921
- Publication date Nov 28, 2024
- The Regents of the University of Michigan
- Zetian Mi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER AND SEMICONDUCTOR DEVICE
- Publication number 20240395543
- Publication date Nov 28, 2024
- Kabushiki Kaisha Toshiba
- Hisashi YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICES WITH REDUCED SIZE AND HIGH ALIGNMENT TOLERANCE
- Publication number 20240395922
- Publication date Nov 28, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Peter COPPENS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin-Based Field Effect Transistors
- Publication number 20240395818
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthias PASSLACK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIELD PLATE AND MULTIPLE-PART GATE STRUCT...
- Publication number 20240395872
- Publication date Nov 28, 2024
- NXP USA, Inc.
- Jie Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240395919
- Publication date Nov 28, 2024
- Kabushiki Kaisha Toshiba
- Jumpei TAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE COMPRISING A SILICON SUBSTRATE
- Publication number 20240395805
- Publication date Nov 28, 2024
- Cambridge GaN Devices Limited
- Florin UDREA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Amplifier System in a Package
- Publication number 20240395645
- Publication date Nov 28, 2024
- 3D GLASS SOLUTIONS, INC
- Jeb H. Flemming
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N SILICON SEMICONDUCTOR WAFER
- Publication number 20240395873
- Publication date Nov 28, 2024
- AZUR SPACE SOLAR POWER GMBH
- Atsushi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240387641
- Publication date Nov 21, 2024
- Fuji Electric Co., Ltd.
- Yuki OHUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MODULE AND SEMICONDUCTOR UNIT
- Publication number 20240387513
- Publication date Nov 21, 2024
- ROHM CO., LTD.
- Isao TAKOBE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION STRUCTURE WITH VARYING LAYER COMPOSITION
- Publication number 20240387718
- Publication date Nov 21, 2024
- GAN SYSTEMS INC.
- Claudio Andres Canizares
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240387170
- Publication date Nov 21, 2024
- Shin-Etsu Handotai Co., Ltd.
- Ippei KUBONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER STRUCTURE CONFIGURED TO INCREASE PERFORMANCE OF III-V DEVICES
- Publication number 20240387719
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Hsiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANO TRANSISTORS WITH SOURCE/DRAIN HAVING SIDE CONTACTS TO 2-D MATE...
- Publication number 20240379800
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED-GATE HIGH-ELECTRON-MOBILITY TRANSISTORS WITH DOPED BARRIER...
- Publication number 20240379834
- Publication date Nov 14, 2024
- TELEDYNE SCIENTIFIC & IMAGING, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240379579
- Publication date Nov 14, 2024
- Dynax Semiconductor, Inc.
- Yi PEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240379758
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yip LOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERLATTICE EPITAXIAL STRUCTURE WITH VARYING LATTICE PARAMETER DIF...
- Publication number 20240379765
- Publication date Nov 14, 2024
- GAN SYSTEMS INC.
- Claudio Andres Canizares
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
- Publication number 20240379767
- Publication date Nov 14, 2024
- Sumitomo Electric Industries, Ltd.
- Sadanori ARAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240379784
- Publication date Nov 14, 2024
- Sumitomo Electric Industries, Ltd.
- Akihiro HAYASAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE
- Publication number 20240376635
- Publication date Nov 14, 2024
- NGK Insulators, Ltd.
- Hiroharu KOBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride-Based Device with Step-Wise Field Plate and Method...
- Publication number 20240379836
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVITY-CONTROLLED POWER SEMICONDUCTOR DEVICE
- Publication number 20240379779
- Publication date Nov 14, 2024
- Board of Regents, The University of Texas System
- Qin HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
- Publication number 20240379835
- Publication date Nov 14, 2024
- ROHM CO., LTD.
- Isao TAKOBE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...
- Publication number 20240368804
- Publication date Nov 7, 2024
- Sumitomo Chemical Company, Limited
- Takehiro YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20240372035
- Publication date Nov 7, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20240371968
- Publication date Nov 7, 2024
- UNITED MICROELECTRONICS CORP.
- An-Chi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20240371969
- Publication date Nov 7, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Anbang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS

Nitride compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

III-nitride-based semiconductor devices on patterned substrates and...

Fin-based field effect transistors

Semiconductor device and method for manufacturing the same

Nitride-based semiconductor device and method for manufacturing the...

Ohmic contacts for a high-electron-mobility transistor

Structure including multi-level field plate and method of forming t...

Method for manufacturing an ohmic contact for a HEMT device

Semiconductor device

GaN/two-dimensional AlN heterojunction rectifier on silicon substra...

Semiconductor device that includes a conductive member and an elect...

Gallium nitride transistor

Epitaxial oxide materials, structures, and devices

Method of obtaining a smooth surface with epitaxial lateral overgrowth

Semiconductor layer structure

Semiconductor device and method for manufacturing the same

Semiconductor device, method for manufacturing semiconductor device...

Double-channel HEMT device and manufacturing method thereof

Gallium nitride (GAN) three-dimensional integrated circuit technology

Nitride-based semiconductor device and method for manufacturing the...

Transistors with source-connected field plates

Material structure for low thermal resistance silicon-based gallium...

Nitride semiconductor, semiconductor device, and method for manufac...

Nitride semiconductor device

Gallium Nitride high-electron mobility transistors with p-type laye...

Semiconductor device and method of manufacturing the same

Semiconductor device

Field assisted interfacial diffusion doping through heterostructure...

High hole mobility transistor (HHMT) and method of manufacturing th...

Coupled guard rings for edge termination

Heterostructure including alternating sets of channel and barrier l...

Patents Applicationslast 30 patents

POWER SEMICONDUCTOR DEVICE COMPRISING A WIDE BANDGAP SUBSTRATE

SEMICONDUCTOR HETEROSTRUCTURES WITH SCANDIUM III-NITRIDE LAYER

WAFER AND SEMICONDUCTOR DEVICE

HEMT DEVICES WITH REDUCED SIZE AND HIGH ALIGNMENT TOLERANCE

Fin-Based Field Effect Transistors

SEMICONDUCTOR DEVICE WITH FIELD PLATE AND MULTIPLE-PART GATE STRUCT...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

POWER SEMICONDUCTOR DEVICE COMPRISING A SILICON SUBSTRATE

Power Amplifier System in a Package

III-N SILICON SEMICONDUCTOR WAFER

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR MODULE AND SEMICONDUCTOR UNIT

HETEROJUNCTION STRUCTURE WITH VARYING LAYER COMPOSITION

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME

BARRIER STRUCTURE CONFIGURED TO INCREASE PERFORMANCE OF III-V DEVICES

NANO TRANSISTORS WITH SOURCE/DRAIN HAVING SIDE CONTACTS TO 2-D MATE...

RECESSED-GATE HIGH-ELECTRON-MOBILITY TRANSISTORS WITH DOPED BARRIER...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

SUPERLATTICE EPITAXIAL STRUCTURE WITH VARYING LATTICE PARAMETER DIF...

SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE

Gallium Nitride-Based Device with Step-Wise Field Plate and Method...

CONDUCTIVITY-CONTROLLED POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

HIGH ELECTRON MOBILITY TRANSISTOR

SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME