Nitrides of silicon

Industry

CPC
Y10S148/114

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/114Nitrides of silicon

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device employing silicon nitride layers with varied h...
- Patent number 6,137,156
- Issue date Oct 24, 2000
- DENSO Corporation
- Yuji Ichikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a variable concentration SiON gate insulating film
- Patent number 5,773,325
- Issue date Jun 30, 1998
- Semiconductor Energy Laboratory Co., Ltd.
- Satoshi Teramoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming silicon nitride with varied hydrogen concentration
- Patent number 5,714,408
- Issue date Feb 3, 1998
- Denso Corporation
- Yuji Ichikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EPROM cell with a readily scalable interpoly dielectric
- Patent number 5,600,166
- Issue date Feb 4, 1997
- SGS-Thomson Microelectronics, S.r.l.
- Cesare Clementi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with braded silicon nitride
- Patent number 5,508,532
- Issue date Apr 16, 1996
- Semiconductor Energy Laboratory Co., Ltd.
- Satoshi Teramoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving erase characteristics and coupling ratios of b...
- Patent number 5,473,179
- Issue date Dec 5, 1995
- United Microelectronics Corporation
- Gary Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an image sensor
- Patent number 5,434,097
- Issue date Jul 18, 1995
- Samsung Electronics Co., Ltd.
- Jong-cheol Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an EPROM cell with a readily scalable interpoly di...
- Patent number 5,422,291
- Issue date Jun 6, 1995
- SGS-Thomson Microelectronics, S.r.l.
- Cesare Clementi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating thin film transistor
- Patent number 5,362,661
- Issue date Nov 8, 1994
- Gold Star Co., Ltd.
- Hong K. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making gate overlapped lightly doped drain for buried cha...
- Patent number 5,358,879
- Issue date Oct 25, 1994
- Loral Federal Systems Company
- Frederick T. Brady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving erase characteristics and coupling ratios of b...
- Patent number 5,352,619
- Issue date Oct 4, 1994
- United Microelectronics Corporation
- Gary Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor device with insulation film
- Patent number 5,334,867
- Issue date Aug 2, 1994
- SamSung Electronics Co., Ltd.
- Jong-cheol Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
UV transparent oxynitride deposition in single wafer PECVD system
- Patent number 5,260,236
- Issue date Nov 9, 1993
- Intel Corporation
- William G. Petro
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for the production of silicon oxynitride film where the nitr...
- Patent number 5,254,506
- Issue date Oct 19, 1993
- Matsushita Electric Industrial Co., Ltd.
- Takashi Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned method of making a split gate single transistor non-vo...
- Patent number 5,242,848
- Issue date Sep 7, 1993
- Silicon Storage Technology, Inc.
- Bing Yeh
- G11 - INFORMATION STORAGE
Information Patent Grant
Process for fabricating gate insulating structure of a charge coupl...
- Patent number 5,238,863
- Issue date Aug 24, 1993
- Sony Corporation
- Takashi Fukusho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon nitride film
- Patent number 5,234,869
- Issue date Aug 10, 1993
- Kabushiki Kaisha Toshiba
- Yuuichi Mikata
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a nitrided silicon dioxide (SiO.sub.x N.sub.y) film
- Patent number 5,198,392
- Issue date Mar 30, 1993
- Oki Electric Industry Co., Ltd.
- Hisashi Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving erase characteristics of buried bit line flash...
- Patent number 5,077,230
- Issue date Dec 31, 1991
- Intel Corporation
- Been-Jon Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving erase characteristics of buried bit line flash...
- Patent number 5,075,245
- Issue date Dec 24, 1991
- Intel Corporation
- Been-Jon Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for preparing a silicon nitride insulating film for semicon...
- Patent number 5,013,692
- Issue date May 7, 1991
- Sharp Kabushiki Kaisha
- Shigeaki Ide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a semiconductor device having a silicon oxyni...
- Patent number 4,980,307
- Issue date Dec 25, 1990
- Fujitsu Limited
- Takashi Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealing process to stabilize PECVD silicon nitride for applicatio...
- Patent number 4,962,065
- Issue date Oct 9, 1990
- The University of Arkansas
- William D. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicon oxynitride over refractory metal...
- Patent number 4,954,867
- Issue date Sep 4, 1990
- Seiko Instruments Inc.
- Takashi Hosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a polycidegate employing nitrogen/oxygen impl...
- Patent number 4,897,368
- Issue date Jan 30, 1990
- Matsushita Electric Industrial Co., Ltd.
- Kazuhiro Kobushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition of silicon-containing films using organosilicon compound...
- Patent number 4,894,352
- Issue date Jan 16, 1990
- Texas Instruments Inc.
- Andrew P. Lane
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma vapor deposition of an improved passivation film using elect...
- Patent number 4,866,003
- Issue date Sep 12, 1989
- Yamaha Corporation
- Katsuyuki Yokoi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Native oxide reduction for sealing nitride deposition
- Patent number 4,855,258
- Issue date Aug 8, 1989
- NCR Corporation
- Derryl D. J. Allman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making vertically-oriented interconnections for VLSI de...
- Patent number 4,808,552
- Issue date Feb 28, 1989
- Texas Instruments Incorporated
- Dirk N. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma enhanced chemical vapor deposited vertical silicon nitride r...
- Patent number 4,786,612
- Issue date Nov 22, 1988
- Intel Corporation
- Leopoldo D. Yau
- H01 - BASIC ELECTRIC ELEMENTS

Nitrides of silicon

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device employing silicon nitride layers with varied h...

Method of making a variable concentration SiON gate insulating film

Method of forming silicon nitride with varied hydrogen concentration

EPROM cell with a readily scalable interpoly dielectric

Semiconductor device with braded silicon nitride

Method for improving erase characteristics and coupling ratios of b...

Method for manufacturing an image sensor

Method of making an EPROM cell with a readily scalable interpoly di...

Method for fabricating thin film transistor

Method of making gate overlapped lightly doped drain for buried cha...

Method for improving erase characteristics and coupling ratios of b...

Image sensor device with insulation film

UV transparent oxynitride deposition in single wafer PECVD system

Method for the production of silicon oxynitride film where the nitr...

Self-aligned method of making a split gate single transistor non-vo...

Process for fabricating gate insulating structure of a charge coupl...

Method of manufacturing silicon nitride film

Method of forming a nitrided silicon dioxide (SiO.sub.x N.sub.y) film

Method for improving erase characteristics of buried bit line flash...

Method for improving erase characteristics of buried bit line flash...

Process for preparing a silicon nitride insulating film for semicon...

Process for producing a semiconductor device having a silicon oxyni...

Annealing process to stabilize PECVD silicon nitride for applicatio...

Semiconductor device with silicon oxynitride over refractory metal...

Method of fabricating a polycidegate employing nitrogen/oxygen impl...

Deposition of silicon-containing films using organosilicon compound...

Plasma vapor deposition of an improved passivation film using elect...

Native oxide reduction for sealing nitride deposition

Process for making vertically-oriented interconnections for VLSI de...

Plasma enhanced chemical vapor deposited vertical silicon nitride r...