Non-metal ion trapping, i.e. using memory material trapping non-metal ions given by the electrode or another layer during a write operation

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G11C2213/12Non-metal ion trapping, i.e. using memory material trapping non-metal ions given by the electrode or another layer during a write operation

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Patents Grantslast 30 patents

Information Patent Grant
Memory cell switch device
- Patent number 10,658,588
- Issue date May 19, 2020
- Sony Corporation
- Shuichiro Yasuda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Resistive memory devices
- Patent number 10,090,462
- Issue date Oct 2, 2018
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells, non-volatile memory arrays, methods of operating memo...
- Patent number 9,275,728
- Issue date Mar 1, 2016
- Micron Technology, Inc.
- Bhaskar Srinivasan
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory devices
- Patent number 9,224,945
- Issue date Dec 29, 2015
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory cells having variable switching char...
- Patent number 9,047,940
- Issue date Jun 2, 2015
- Intermolecular, Inc.
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Switchable junction with an intrinsic diode formed with a voltage d...
- Patent number 8,982,601
- Issue date Mar 17, 2015
- Hewlett-Packard Development Company, L.P.
- Jianhua Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanoscale electronic device with barrier layers
- Patent number 8,766,231
- Issue date Jul 1, 2014
- Hewlett-Packard Development Company, L.P.
- Wei Yi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor memory device and memory cell voltage application method
- Patent number 8,724,371
- Issue date May 13, 2014
- Kabushiki Kaisha Toshiba
- Hirofumi Inoue
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device including semiconductor charge-trapping...
- Patent number 8,664,640
- Issue date Mar 4, 2014
- Massachusetts Institute of Technology
- Moungi G. Bawendi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory cells, non-volatile memory arrays, methods of operating memo...
- Patent number 8,634,224
- Issue date Jan 21, 2014
- Micron Technology, Inc.
- Bhaskar Srinivasan
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-repairing memristor and method
- Patent number 8,605,484
- Issue date Dec 10, 2013
- Hewlett-Packard Development Company, L.P.
- Julien Borghetti
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells, non-volatile memory arrays, methods of operating memo...
- Patent number 8,537,599
- Issue date Sep 17, 2013
- Micron Technology, Inc.
- Bhaskar Srinivasan
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and memory cell voltage application method
- Patent number 8,467,225
- Issue date Jun 18, 2013
- Kabushiki Kaisha Toshiba
- Hirofumi Inoue
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory element and memory device including the same
- Patent number 8,445,882
- Issue date May 21, 2013
- Samsung Electronics Co., Ltd.
- Dong-soo Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance nonvolatile memory device
- Patent number 8,441,837
- Issue date May 14, 2013
- Panasonic Corporation
- Yuuichirou Ikeda
- G11 - INFORMATION STORAGE
Information Patent Grant
Data read/write device
- Patent number 8,139,398
- Issue date Mar 20, 2012
- Kabushiki Kaisha Toshiba
- Koichi Kubo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Data read/write device
- Patent number 7,936,587
- Issue date May 3, 2011
- Kabushiki Kaisha Toshiba
- Koichi Kubo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Variable-resistance element
- Patent number 7,764,160
- Issue date Jul 27, 2010
- Fujitsu Limited
- Hiroyasu Kawano
- G11 - INFORMATION STORAGE
Information Patent Grant
Data read/write device
- Patent number 7,733,684
- Issue date Jun 8, 2010
- Kabushiki Kaisha Toshiba
- Koichi Kubo
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable breakdown characteristic diode
- Patent number 7,579,631
- Issue date Aug 25, 2009
- Spansion LLC
- David Gaun
- G11 - INFORMATION STORAGE
Information Patent Grant
Organic bistable device and organic memory cells
- Patent number 6,950,331
- Issue date Sep 27, 2005
- The Regents of the University of California
- Yang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with active and passive layers
- Patent number 6,858,481
- Issue date Feb 22, 2005
- Advanced Micro Devices, Inc.
- Juri H. Krieger
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with active passive layers
- Patent number 6,838,720
- Issue date Jan 4, 2005
- Advanced Micro Devices, Inc.
- Juri H. Krieger
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device
- Patent number 6,768,157
- Issue date Jul 27, 2004
- Advanced Micro Devices, Inc.
- Juri H. Krieger
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
PROTON RESISTIVE MEMORY DEVICES AND METHODS
- Publication number 20170047513
- Publication date Feb 16, 2017
- University of Washington
- Marco Rolandi
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive Random Access Memory Cells Having Variable Switching Char...
- Publication number 20140192586
- Publication date Jul 10, 2014
- INTERMOLECULAR INC.
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells, Non-Volatile Memory Arrays, Methods Of Operating Memo...
- Publication number 20140104932
- Publication date Apr 17, 2014
- Micron Technology, Inc.
- Bhaskar Srinivasan
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICES
- Publication number 20140061568
- Publication date Mar 6, 2014
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND MEMORY CELL VOLTAGE APPLICATION METHOD
- Publication number 20130265816
- Publication date Oct 10, 2013
- Hirofumi Inoue
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile Memory Elements And Memory Devices Including The Same
- Publication number 20130043451
- Publication date Feb 21, 2013
- Samsung Electronics Co., Ltd.
- Seung-ryul Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells, Non-Volatile Memory Arrays, Methods Of Operating Memo...
- Publication number 20130001498
- Publication date Jan 3, 2013
- Micron Technology, Inc.
- Bhaskar Srinivasan
- G11 - INFORMATION STORAGE
Information Patent Application
NANOSCALE ELECTRONIC DEVICE WITH BARRIER LAYERS
- Publication number 20120228575
- Publication date Sep 13, 2012
- Wei Yi
- G11 - INFORMATION STORAGE
Information Patent Application
SWITCHABLE JUNCTION WITH AN INTRINSIC DIODE FORMED WITH A VOLTAGE D...
- Publication number 20120063197
- Publication date Mar 15, 2012
- Jianhua Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells, Non-Volatile Memory Arrays, Methods Of Operating Memo...
- Publication number 20120039109
- Publication date Feb 16, 2012
- Bhaskar Srinivasan
- G11 - INFORMATION STORAGE
Information Patent Application
Non-Volatile Memory Element And Memory Device Including The Same
- Publication number 20120018695
- Publication date Jan 26, 2012
- Samsung Electronics Co., Ltd.
- Dong-soo Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Self-Repairing Memristor and Method
- Publication number 20110261608
- Publication date Oct 27, 2011
- Julien Borghetti
- G11 - INFORMATION STORAGE
Information Patent Application
DATA READ/WRITE DEVICE
- Publication number 20110170333
- Publication date Jul 14, 2011
- Koichi Kubo
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE
- Publication number 20110122680
- Publication date May 26, 2011
- Yuuichirou Ikeda
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND MEMORY CELL VOLTAGE APPLICATION METHOD
- Publication number 20100321978
- Publication date Dec 23, 2010
- Kabushiki Kaisha Toshiba
- Hirofumi Inoue
- G11 - INFORMATION STORAGE
Information Patent Application
DATA READ/ WRITE DEVICE
- Publication number 20100202187
- Publication date Aug 12, 2010
- Koichi Kubo
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE-RESISTANCE ELEMENT
- Publication number 20090121823
- Publication date May 14, 2009
- Fujitsu Limited
- Hiroyasu Kawano
- G11 - INFORMATION STORAGE
Information Patent Application
DATA READ/ WRITE DEVICE
- Publication number 20070133358
- Publication date Jun 14, 2007
- Koichi Kubo
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive memory device with improved data retention and reduced power
- Publication number 20060256608
- Publication date Nov 16, 2006
- Spansion LLC
- An Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Variable breakdown characteristic diode
- Publication number 20060214183
- Publication date Sep 28, 2006
- Spansion LLC
- David Gaun
- G11 - INFORMATION STORAGE
Information Patent Application
Non-volatile memory device
- Publication number 20050072989
- Publication date Apr 7, 2005
- Moungi G. Bawendi
- G11 - INFORMATION STORAGE
Information Patent Application
Memory device with active passive layers
- Publication number 20040026714
- Publication date Feb 12, 2004
- Juri H. Krieger
- G11 - INFORMATION STORAGE
Information Patent Application
Organic bistable device and organic memory cells
- Publication number 20040027849
- Publication date Feb 12, 2004
- Yang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Memory device
- Publication number 20030178667
- Publication date Sep 25, 2003
- Juri H. Krieger
- G11 - INFORMATION STORAGE
Information Patent Application
Memory device with active and passive layers
- Publication number 20030173612
- Publication date Sep 18, 2003
- Juri H. Krieger
- G11 - INFORMATION STORAGE

Non-metal ion trapping, i.e. using memory material trapping non-metal ions given by the electrode or another layer during a write operation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory cell switch device

Resistive memory devices

Memory cells, non-volatile memory arrays, methods of operating memo...

Resistive memory devices

Resistive random access memory cells having variable switching char...

Switchable junction with an intrinsic diode formed with a voltage d...

Nanoscale electronic device with barrier layers

Semiconductor memory device and memory cell voltage application method

Non-volatile memory device including semiconductor charge-trapping...

Memory cells, non-volatile memory arrays, methods of operating memo...

Self-repairing memristor and method

Memory cells, non-volatile memory arrays, methods of operating memo...

Semiconductor memory device and memory cell voltage application method

Non-volatile memory element and memory device including the same

Variable resistance nonvolatile memory device

Data read/write device

Data read/write device

Variable-resistance element

Data read/write device

Variable breakdown characteristic diode

Organic bistable device and organic memory cells

Memory device with active and passive layers

Memory device with active passive layers

Memory device

Patents Applicationslast 30 patents

PROTON RESISTIVE MEMORY DEVICES AND METHODS

Resistive Random Access Memory Cells Having Variable Switching Char...

Memory Cells, Non-Volatile Memory Arrays, Methods Of Operating Memo...

RESISTIVE MEMORY DEVICES

SEMICONDUCTOR MEMORY DEVICE AND MEMORY CELL VOLTAGE APPLICATION METHOD

Nonvolatile Memory Elements And Memory Devices Including The Same

Memory Cells, Non-Volatile Memory Arrays, Methods Of Operating Memo...

NANOSCALE ELECTRONIC DEVICE WITH BARRIER LAYERS

SWITCHABLE JUNCTION WITH AN INTRINSIC DIODE FORMED WITH A VOLTAGE D...

Memory Cells, Non-Volatile Memory Arrays, Methods Of Operating Memo...

Non-Volatile Memory Element And Memory Device Including The Same

Self-Repairing Memristor and Method

DATA READ/WRITE DEVICE

VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE AND MEMORY CELL VOLTAGE APPLICATION METHOD

DATA READ/ WRITE DEVICE

VARIABLE-RESISTANCE ELEMENT

DATA READ/ WRITE DEVICE

Resistive memory device with improved data retention and reduced power

Variable breakdown characteristic diode

Non-volatile memory device

Memory device with active passive layers

Organic bistable device and organic memory cells

Memory device

Memory device with active and passive layers