Claims
- 1. A method for forming a memory having a plurality of reversibly programmable memory cells, the method including:
forming a plurality of first electrodes made of copper on a substrate; forming a passive layer including copper sulfide on each of the plurality of first electrodes; selectively forming a polymer layer only over the passive layer on each of the plurality of first electrodes to form an active layer thereon by exposing the passive layer to a monomer gas such that material in the monomer gas self-assembles only on the passive layer on each of the plurality of first electrodes to form the polymer in the active layer, the polymer having a reversibly variable electrical conductivity upon the introduction and removal of charged species from the passive layer, and forming a plurality of second electrodes over the active layer.
- 2. The method of claim 1, wherein each of the plurality of reversibly programmable memory cells in the memory includes only two electrodes.
- 3. The method of claim 1, wherein the step of forming a passive layer comprises:
exposing the first electrodes to hydrogen sulfide gas suitable to form the passive layer including copper sulfide.
- 4. The method of claim 1, wherein the step of selectively forming a polymer layer comprises:
forming a layer of polyphenylacetylene (PPA) or polydiphenylacetylene (PDPA) as the active layer.
- 5. The method of claim 1, wherein the step of selectively forming a polymer layer comprises:
forming a layer of the organic polymer having a thickness between about 50 to about 1000 Angstroms.
- 6. The method of claim 1, wherein the step of forming a passive layer comprises:
forming the passive layer to have a thickness between about 20 to about 100 Angstroms.
- 7. The method of claim 1, further comprising:
forming a barrier layer including a material that impedes spontaneous movement of charged species between the active layer and the passive layer when an electrical potential difference is not applied between the two electrode layers.
- 8. The method of claim 7, wherein the barrier layer is positioned between the active layer and the passive layer.
- 9. The method of claim 1, wherein the memory cell includes only one active layer and only one passive layer between the first and second electrode layers.
- 10. The method of claim 1, further comprising:
applying an electric field to the first and second electrode layers to transfer charged species from the passive layer to polymer material in the active layer, thereby one of doping the polymer with charged species from the passive layer and formnig nanowire features in the polymer to store information in the memory cell.
- 11. The method of claim 10, wherein the step of applying comprises:
doping the polymer with charged species from the passive layer to store information in the memory cell.
- 12. The method of claim 10, wherein the step of applying comprises:
forming nanowire features in the polymer to store information in the memory cell.
- 13. The method of claim 1, wherein the two electrode layers arranged to both program the memory cell to store information and read stored information from the memory cell.
- 14. A method for forming a memory having a plurality of reversibly programmable memory cells, the method including:
forming a plurality of first electrodes on a substrate; forming a passive layer including a superionic material on each of the plurality of first electrodes; selectively forming a polymer layer only over the passive layer on each of the plurality of first electrodes to form an active layer thereon by exposing the passive layer to a gas such that material in the gas self-assembles only on the passive layer on each of the plurality of first electrodes to form the polymer layer, the polymer having a reversibly variable electrical conductivity upon the introduction and removal of charged species from the passive layer, and forming a plurality of second electrodes over the active layer.
- 15. The method of clain 14, wherein each of the plurality of reversibly programmable memory cells in the memory includes only two electrodes.
- 16. The method of clain 14, wherein the step of forming a passive layer comprises:
exposing the first electrodes to hydrogen sulfide gas suitable to form the passive layer including copper sulfide.
- 17. The method of clain 14, wherein the step of selectively forning a polymer layer comprises:
forming a layer of polyphenylacetylene (PPA) or polydiphenylacetylene (PDPA) as the active layer.
- 18. The method of claim 14, wherein the step of selectively forming a polymer layer comprises:
forming a layer of the organic polymer having a thickness between about 50 to about 1000 Angstroms.
- 19. The method of clain 14, wherein the step of forming a passive layer comprises:
forming the passive layer to have a thickness between about 20 to about 100 Angstroms.
- 20. The method of claim 14, further comprising:
forming a barrier layer including a material that impedes spontaneous movement of charged species between the active layer and the passive layer when an electrical potential difference is not applied between the two electrode layers.
- 21. The method of claim 20, wherein the barrier layer is positioned between the active layer and the passive layer.
- 22. The method of claim 14, wherein the memory cell includes only one active layer and only one passive layer between the first and second electrode layers.
- 23. The method of claim 14, further comprising:
applying an electric field to the first and second electrode layers to transfer charged species from the passive layer to polymer material in the active layer, thereby one of doping the polymer with charged species from the passive layer and forming nanowire features in the polymer to store information in the memory cell.
- 24. The method of clain 23, wherein the step of applying comprises:
doping the polymer with charged species from the passive layer to store information in the memory cell.
- 25. The method of claim 23, wherein the step of applying comprises:
forming nanowire features in the polymer to store information in the memory cell.
- 26. The method of claim 14, wherein the two electrode layers arranged to both program the memory cell to store information and read stored information from the memory cell.
Parent Case Info
[0001] This application is a continuation-in-part of PCT application PCT/RU01/00334, filed Aug. 13, 2001. This application is a continuation-in-part of Application Ser. No. 10/238,880, filed Sep. 11, 2002. This application is a continuation-in-part of Application Ser. No. 10/304,863, filed Nov. 27, 2002. All of PCT/RU01/00334, Application Ser. No. 10/238,880, and Application Ser. No. 10/304,863 are hereby incorporated by reference in their entirety.
Continuation in Parts (3)
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Number |
Date |
Country |
Parent |
PCT/RU01/00334 |
Aug 2001 |
US |
Child |
10413818 |
Apr 2003 |
US |
Parent |
10238880 |
Sep 2002 |
US |
Child |
10413818 |
Apr 2003 |
US |
Parent |
10304863 |
Nov 2002 |
US |
Child |
10413818 |
Apr 2003 |
US |