of charge coupled devices

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H01L29/1062

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/1062of charge coupled devices

Industries

Patents Grantslast 30 patents

Information Patent Grant
Memory device having 2-transistor vertical memory cell and conducti...
- Patent number 12,213,321
- Issue date Jan 28, 2025
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having 2-transistor vertical memory cell and wrapped...
- Patent number 11,950,426
- Issue date Apr 2, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having dual nanoribbo...
- Patent number 11,862,703
- Issue date Jan 2, 2024
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having 2-transistor vertical memory cell and wrapped...
- Patent number 11,616,073
- Issue date Mar 28, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having dual nanoribbo...
- Patent number 11,437,483
- Issue date Sep 6, 2022
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor, memory element and manufacturing method of...
- Patent number 10,403,721
- Issue date Sep 3, 2019
- NUSTORAGE TECHNOLOGY CO., LTD.
- Fu-Chou Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for operating the same
- Patent number 10,339,996
- Issue date Jul 2, 2019
- SK Hynix Inc.
- Jung Hwan Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Gain measurement structure
- Patent number 8,004,579
- Issue date Aug 23, 2011
- E2V Technologies (UK) Limited
- Mark Stanford Robbins
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
CCD charge-splitter adjustment by static charge gradient
- Patent number 7,274,052
- Issue date Sep 25, 2007
- Kenet, Inc.
- Michael P. Anthony
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-coupled device with potential barrier and charge storage reg...
- Patent number 6,207,981
- Issue date Mar 27, 2001
- NEC Corporation
- Keisuke Hatano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation hardened charge coupled device
- Patent number 5,900,654
- Issue date May 4, 1999
- James P. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of trapping effects in charge transfer devices
- Patent number 5,793,070
- Issue date Aug 11, 1998
- Massachusetts Institute of Technology
- Barry E. Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multidirectional transfer charge-coupled device
- Patent number 5,760,431
- Issue date Jun 2, 1998
- Massachusetts Institute of Technology
- Eugene D. Savoye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making signal charge transfer devices
- Patent number 5,578,511
- Issue date Nov 26, 1996
- LG Semicon Co., Ltd.
- Dong K. Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Full frame CCD image sensor with altered accumulation potential
- Patent number 5,563,404
- Issue date Oct 8, 1996
- Eastman Kodak Company
- Constantine N. Anagnostopoulos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a planar charge coupled device with edge aligned i...
- Patent number 5,556,801
- Issue date Sep 17, 1996
- Eastman Kodak Company
- Gilbert A. Hawkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge transfer device with two-phase two-layered electrode structu...
- Patent number 5,521,405
- Issue date May 28, 1996
- NEC Corporation
- Yasutaka Nakashiba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge transfer device and driving method for the same
- Patent number 5,477,069
- Issue date Dec 19, 1995
- Sharp Kabushiki Kaisha
- Nobuyuki Fukuba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having silicon islands
- Patent number 5,466,621
- Issue date Nov 14, 1995
- Hitachi, Ltd.
- Dai Hisamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-state imaging device with internal smear eliminator
- Patent number 5,463,232
- Issue date Oct 31, 1995
- Kabushiki Kaisha Toshiba
- Hirofumi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-coupled device having an improved charge-transfer efficiency...
- Patent number 5,448,089
- Issue date Sep 5, 1995
- Eastman Kodak Company
- Edmund K. Banghart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-state imaging device with tapered channel regions
- Patent number 5,365,093
- Issue date Nov 15, 1994
- Sony Corporation
- Yoshinori Kuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge transfer device and solid state image sensor using the same
- Patent number 5,359,213
- Issue date Oct 25, 1994
- Goldstar Electron Co., Ltd.
- Seo K. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device and a semiconductor...
- Patent number 5,346,834
- Issue date Sep 13, 1994
- Hitachi, Ltd.
- Dai Hisamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,345,099
- Issue date Sep 6, 1994
- Matsushita Electric Industrial Co., Ltd.
- Takahiro Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge transfer device having a bent transfer channel
- Patent number 5,309,005
- Issue date May 3, 1994
- Sharp Kabushiki Kaisha
- Tadashi Nagakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a charge coupled device
- Patent number 5,302,543
- Issue date Apr 12, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Kiyohiko Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a convex charge coupled device
- Patent number 5,292,680
- Issue date Mar 8, 1994
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge coupled device (CCD) having high transfer efficiency at low...
- Patent number 5,241,199
- Issue date Aug 31, 1993
- Eastman Kodak Company
- Gilbert A. Hawkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge coupled device
- Patent number 5,189,498
- Issue date Feb 23, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Kiyohiko Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED...
- Publication number 20240251563
- Publication date Jul 25, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...
- Publication number 20240088253
- Publication date Mar 14, 2024
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED...
- Publication number 20230240077
- Publication date Jul 27, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND CONDUCTI...
- Publication number 20230138322
- Publication date May 4, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...
- Publication number 20220359697
- Publication date Nov 10, 2022
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...
- Publication number 20210280683
- Publication date Sep 9, 2021
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR, MEMORY ELEMENT AND MANUFACTURING METHOD OF...
- Publication number 20180366547
- Publication date Dec 20, 2018
- NuStorage Technology Co., Ltd.
- FU-CHOU LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
- Publication number 20180158505
- Publication date Jun 7, 2018
- SK HYNIX INC.
- Jung Hwan LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gain measurement structure
- Publication number 20070146521
- Publication date Jun 28, 2007
- E2V TECHNOLOGIES (UK) LIMITED
- Mark Stanford Robbins
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
CCD charge-splitter adjustment by static charge gradient
- Publication number 20070007555
- Publication date Jan 11, 2007
- Kenet, Inc.
- Michael P. Anthony
- H01 - BASIC ELECTRIC ELEMENTS

of charge coupled devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory device having 2-transistor vertical memory cell and conducti...

Memory device having 2-transistor vertical memory cell and wrapped...

Gate-all-around integrated circuit structures having dual nanoribbo...

Memory device having 2-transistor vertical memory cell and wrapped...

Gate-all-around integrated circuit structures having dual nanoribbo...

Field effect transistor, memory element and manufacturing method of...

Semiconductor memory device and method for operating the same

Gain measurement structure

CCD charge-splitter adjustment by static charge gradient

Charge-coupled device with potential barrier and charge storage reg...

Radiation hardened charge coupled device

Reduction of trapping effects in charge transfer devices

Multidirectional transfer charge-coupled device

Method of making signal charge transfer devices

Full frame CCD image sensor with altered accumulation potential

Method of making a planar charge coupled device with edge aligned i...

Charge transfer device with two-phase two-layered electrode structu...

Charge transfer device and driving method for the same

Method of manufacturing a semiconductor device having silicon islands

Solid-state imaging device with internal smear eliminator

Charge-coupled device having an improved charge-transfer efficiency...

Solid-state imaging device with tapered channel regions

Charge transfer device and solid state image sensor using the same

Method for manufacturing a semiconductor device and a semiconductor...

Semiconductor device

Charge transfer device having a bent transfer channel

Method of making a charge coupled device

Method of forming a convex charge coupled device

Charge coupled device (CCD) having high transfer efficiency at low...

Charge coupled device

Patents Applicationslast 30 patents

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND CONDUCTI...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...

FIELD EFFECT TRANSISTOR, MEMORY ELEMENT AND MANUFACTURING METHOD OF...

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THE SAME

Gain measurement structure

CCD charge-splitter adjustment by static charge gradient