oriented parallel to a substrate

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H01L29/0673

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/0673oriented parallel to a substrate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Hybrid channel semiconductor device and method
- Patent number 12,211,900
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,211,919
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded backside memory on a field effect transistor
- Patent number 12,213,323
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Liang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around transistor with strained channels
- Patent number 12,211,897
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-En Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fish bone structure and methods of formin...
- Patent number 12,211,944
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,211,753
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructured channel regions for semiconductor devices
- Patent number 12,211,918
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having oxide sub-fins
- Patent number 12,211,925
- Issue date Jan 28, 2025
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device comprising a one-port SRAM cell formed...
- Patent number 12,213,298
- Issue date Jan 28, 2025
- SOCIONEXT INC.
- Masanobu Hirose
- G11 - INFORMATION STORAGE
Information Patent Grant
Field effect transistors comprising a matrix of gate-all-around cha...
- Patent number 12,211,848
- Issue date Jan 28, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,211,844
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,211,895
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal ring for semiconductor device
- Patent number 12,211,917
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having nanowires with...
- Patent number 12,206,027
- Issue date Jan 21, 2025
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device having source/drain regions including a plurality of...
- Patent number 12,205,988
- Issue date Jan 21, 2025
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Kazuyuki Tomida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around device and method of forming the same
- Patent number 12,206,004
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Ju Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including multi-thickness nanowires
- Patent number 12,206,026
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Seung Hun Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 12,205,953
- Issue date Jan 21, 2025
- SOCIONEXT INC.
- Toshio Hino
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate structures for tuning threshold voltage
- Patent number 12,205,850
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructure and manufacturing method thereof
- Patent number 12,205,822
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Cheng Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with source/drain structure and meth...
- Patent number 12,205,849
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a multi-gate device having a semiconductor...
- Patent number 12,199,170
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Ju Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 12,199,099
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,040
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Hyeongyu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate spacer with tilted portion and...
- Patent number 12,198,984
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device structure wi...
- Patent number 12,199,169
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Ching Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon channel tempering
- Patent number 12,199,190
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having removed substrate
- Patent number 12,199,143
- Issue date Jan 14, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistors having vertically stacked nano-sheet
- Patent number 12,199,095
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual channel gate all around transistor device and fabrication meth...
- Patent number 12,198,986
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Sheng Yun
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
In-Situ Tungsten for Gate Stack of Multigate Device
- Publication number 20250038002
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PACKAGE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250038073
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ke-Han SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE CONTACT OVER LOCALLY RAISED GATE
- Publication number 20250040168
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING EXTENDED SOURCE/DRAIN CONTACT AND METHOD
- Publication number 20250040183
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040216
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Sungil PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR CHANNEL REGIONS AND METHODS OF FORMING THE SAME
- Publication number 20250040238
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...
- Publication number 20250040242
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Keumseok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-TEMPERATURE IMPLANT FOR GATE-ALL-AROUND DEVICES
- Publication number 20250040186
- Publication date Jan 30, 2025
- Applied Materials, Inc.
- Yan ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTOR HYBRID GATE CUT
- Publication number 20250040240
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTORS
- Publication number 20250040167
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Navneet K. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250040200
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Sheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040214
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES
- Publication number 20250038110
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Sangjine Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate All-Around Laterally Diffused Metal-Oxide Semiconductor Field...
- Publication number 20250040169
- Publication date Jan 30, 2025
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Formation With Staggered Gate Patterning
- Publication number 20250040184
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250040185
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Hyojin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FAB...
- Publication number 20250040187
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20250040231
- Publication date Jan 30, 2025
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET SRAM WITH TAPERED REGION
- Publication number 20250040115
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHARED SOURCE/DRAIN CONTACT FOR STACKED TRANSISTORS
- Publication number 20250040199
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SEMICONDU...
- Publication number 20250040201
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Shuan LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250040215
- Publication date Jan 30, 2025
- SAMSUNG ELECTRONICS CO,. LTD.
- Dong Hoon HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250040241
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Sung Il PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER LAYERS IN SEMICONDUCTOR DEVICES
- Publication number 20250031399
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mu-Min Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR THERMAL DISSIPATION
- Publication number 20250031413
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che Chi SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER
- Publication number 20250031444
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING THROUGH-STACK THERMAL SINK FOR...
- Publication number 20250029892
- Publication date Jan 23, 2025
- Intel Corporation
- Conor P. PULS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET STRUCTURES WITH CORNER SPACER
- Publication number 20250031401
- Publication date Jan 23, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Bartlomiej J. PAWLAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250031412
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Hyojin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION METAL PATTERNING AND MIDDLE-OF-LINE SELF-ALIGNED CONT...
- Publication number 20250031414
- Publication date Jan 23, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS

oriented parallel to a substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Hybrid channel semiconductor device and method

Semiconductor devices and methods of manufacturing thereof

Embedded backside memory on a field effect transistor

Gate-all-around transistor with strained channels

Semiconductor device with fish bone structure and methods of formin...

Semiconductor device

Nanostructured channel regions for semiconductor devices

Gate-all-around integrated circuit structures having oxide sub-fins

Semiconductor storage device comprising a one-port SRAM cell formed...

Field effect transistors comprising a matrix of gate-all-around cha...

Semiconductor structure

Method of manufacturing a semiconductor device and a semiconductor...

Seal ring for semiconductor device

Gate-all-around integrated circuit structures having nanowires with...

FinFET device having source/drain regions including a plurality of...

Gate all around device and method of forming the same

Semiconductor device including multi-thickness nanowires

Semiconductor integrated circuit device

Gate structures for tuning threshold voltage

Nanostructure and manufacturing method thereof

Semiconductor device structure with source/drain structure and meth...

Method of manufacturing a multi-gate device having a semiconductor...

Semiconductor devices and method of manufacturing the same

Semiconductor device

Semiconductor device including gate spacer with tilted portion and...

Structure and formation method of semiconductor device structure wi...

Silicon channel tempering

Gate-all-around integrated circuit structures having removed substrate

Fin field effect transistors having vertically stacked nano-sheet

Dual channel gate all around transistor device and fabrication meth...

Patents Applicationslast 30 patents

In-Situ Tungsten for Gate Stack of Multigate Device

PACKAGE STRUCTURE AND METHOD FOR FORMING THE SAME

SELF-ALIGNED GATE CONTACT OVER LOCALLY RAISED GATE

DEVICE HAVING EXTENDED SOURCE/DRAIN CONTACT AND METHOD

SEMICONDUCTOR DEVICE

STACKED TRANSISTOR CHANNEL REGIONS AND METHODS OF FORMING THE SAME

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...

HIGH-TEMPERATURE IMPLANT FOR GATE-ALL-AROUND DEVICES

STACKED FIELD EFFECT TRANSISTOR HYBRID GATE CUT

GATE-ALL-AROUND FIELD EFFECT TRANSISTORS

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

INTEGRATED CIRCUIT DEVICES

Gate All-Around Laterally Diffused Metal-Oxide Semiconductor Field...

Contact Formation With Staggered Gate Patterning

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FAB...

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

NANOSHEET SRAM WITH TAPERED REGION

SHARED SOURCE/DRAIN CONTACT FOR STACKED TRANSISTORS

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SEMICONDU...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

BARRIER LAYERS IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE AND METHOD FOR THERMAL DISSIPATION

3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER

INTEGRATED CIRCUIT STRUCTURES HAVING THROUGH-STACK THERMAL SINK FOR...

NANOSHEET STRUCTURES WITH CORNER SPACER

SEMICONDUCTOR DEVICES

WORK FUNCTION METAL PATTERNING AND MIDDLE-OF-LINE SELF-ALIGNED CONT...