oriented parallel to a substrate

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H01L29/0673

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/0673oriented parallel to a substrate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Strained semiconductor FET devices with epitaxial quality improvement
- Patent number 12,176,434
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature separation structure
- Patent number 12,178,032
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Chun Keng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicide gate fill structure
- Patent number 12,176,392
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked nanosheet transistor with defect free channel
- Patent number 12,176,416
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode
- Patent number 12,176,441
- Issue date Dec 24, 2024
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Katsuhiko Fukasaku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device
- Patent number 12,178,031
- Issue date Dec 24, 2024
- SOCIONEXT INC.
- Yoshinobu Yamagami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire/nanosheet device with support portion, method of manufactu...
- Patent number 12,176,393
- Issue date Dec 24, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device with nanostructure channels
- Patent number 12,170,227
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Te Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around device with trimmed channel and dipoled dielectric...
- Patent number 12,170,231
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optoelectronic synaptic memristor
- Patent number 12,169,773
- Issue date Dec 17, 2024
- Beihang University
- Anping Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Field effect transistor with vertical nanowire in channel region an...
- Patent number 12,170,315
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ali Razavieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structures for semiconductor devices
- Patent number 12,170,335
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structures and methods of forming the same in field-effec...
- Patent number 12,170,334
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi Ning Ju
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and methods of forming the same
- Patent number 12,166,076
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jen-Hong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors comprising a vertical stack of elongated semiconductor...
- Patent number 12,165,869
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming interconnect structure having a barrier layer
- Patent number 12,165,975
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Cheng Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 12,166,110
- Issue date Dec 10, 2024
- Adeia Semiconductor Solutions LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method for forming the same
- Patent number 12,165,947
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Sheh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Packaged semiconductor devices including backside power rails and m...
- Patent number 12,166,016
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chi-Yi Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with power control circuit having various...
- Patent number 12,166,029
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Jui Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shared bit lines for memory cells
- Patent number 12,160,985
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ping-Wei Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-planar gate all-around device and method of fabrication thereof
- Patent number RE50222
- Issue date Nov 26, 2024
- Sony Group Corporation
- Willy Rachmady
Information Patent Grant
Semiconductor device and method
- Patent number 12,154,986
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure
- Patent number 12,154,946
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,148,837
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Bo Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,148,810
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Hang Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around structure and methods of forming the same
- Patent number 12,148,836
- Issue date Nov 19, 2024
- Parabellum Strategic Opportunities Fund LLC
- Pei-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with treated interfacial layer on silicon germ...
- Patent number 12,148,843
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated hybrid standard cell structure with gate-all-around device
- Patent number 12,148,745
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Hao Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Gallium nitride (GAN) three-dimensional integrated circuit technology
- Patent number 12,148,747
- Issue date Nov 19, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES
- Publication number 20240429236
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240429278
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Ting PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORK SHEET DEVICE
- Publication number 20240429284
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE SOURCE OR DRAIN CONTACT...
- Publication number 20240429291
- Publication date Dec 26, 2024
- Intel Corporation
- Joseph D’SILVA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE ISOLATION OF CONTACT AND SOURCE/DRAIN STRUCTURES
- Publication number 20240429292
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACTIVE REGION TRIMMING AFTER FORMATION OF SOURCE/DRAIN COMPONENTS
- Publication number 20240429304
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K ISOLATION OF FIN STRUCTURES
- Publication number 20240429312
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE BOTTOM SEED LAYER FORMATION FOR BOTTOM-UP EPITAXY
- Publication number 20240429313
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Cheng Shiau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GATE-ALL-AROUND DEVICE
- Publication number 20240429318
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240429102
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yip LOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240429308
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Chih KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL CAPACITOR (MIM CAPACITOR)
- Publication number 20240429270
- Publication date Dec 26, 2024
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE GATE DIELECTRICS FOR MONOLITHIC STACKED DEVICES
- Publication number 20240429277
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING F...
- Publication number 20240429300
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having FIN Structure and Method of Forming The...
- Publication number 20240429305
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Min YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH DEEP VIA BAR ISOLATION
- Publication number 20240429125
- Publication date Dec 26, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MERGED SELF-ALIGNED BACKSIDE CONTACT
- Publication number 20240429098
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Albert M. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20240429238
- Publication date Dec 26, 2024
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE
- Publication number 20240429274
- Publication date Dec 26, 2024
- IMEC vzw
- Geert Hellings
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORKSHEET DEVICES WITH DIELECTRIC SPINE AT CELL BOUNDARY
- Publication number 20240429276
- Publication date Dec 26, 2024
- Intel Corporation
- Sukru Yemenicioglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIAXIAL OXIDE DIRECTION COMPLEMENTARY FIELD EFFECT TRANSISTOR
- Publication number 20240429279
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STATIC RANDOM ACCESS MEMORY DEVICE WITH STACKED FETS
- Publication number 20240431087
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE CONTACT
- Publication number 20240429097
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION DIODE FOR STACKED FIELD EFFECT TRANSISTOR
- Publication number 20240429226
- Publication date Dec 26, 2024
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE EPITAXY FOR SEMICONDUCTOR STRUCTURES
- Publication number 20240429283
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING DIFFERENT DEVICES AND METHODS FOR...
- Publication number 20240429299
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ting CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240429303
- Publication date Dec 26, 2024
- Samsung Electronics Co., Ltd.
- Donggon Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF DESIGNIN...
- Publication number 20240429168
- Publication date Dec 26, 2024
- Samsung Electronics Co., Ltd.
- Dalhee LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240431099
- Publication date Dec 26, 2024
- WINBOND ELECTRONICS CORP.
- Frederick CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTOR WITH HYBRID CONDUCTION MECHANISM AND MAN...
- Publication number 20240429229
- Publication date Dec 26, 2024
- Fudan University
- Chunlei WU
- H01 - BASIC ELECTRIC ELEMENTS

oriented parallel to a substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Strained semiconductor FET devices with epitaxial quality improvement

Source/drain feature separation structure

Semiconductor device with silicide gate fill structure

Stacked nanosheet transistor with defect free channel

Diode

Semiconductor storage device

Nanowire/nanosheet device with support portion, method of manufactu...

Stacked semiconductor device with nanostructure channels

Gate-all-around device with trimmed channel and dipoled dielectric...

Optoelectronic synaptic memristor

Field effect transistor with vertical nanowire in channel region an...

Epitaxial structures for semiconductor devices

Isolation structures and methods of forming the same in field-effec...

Semiconductor device and methods of forming the same

Transistors comprising a vertical stack of elongated semiconductor...

Method of forming interconnect structure having a barrier layer

Nanosheet channel-to-source and drain isolation

Semiconductor devices and method for forming the same

Packaged semiconductor devices including backside power rails and m...

Integrated circuit device with power control circuit having various...

Shared bit lines for memory cells

Non-planar gate all-around device and method of fabrication thereof

Semiconductor device and method

Semiconductor device structure

Semiconductor devices

Semiconductor device and method

Gate-all-around structure and methods of forming the same

Semiconductor device with treated interfacial layer on silicon germ...

Integrated hybrid standard cell structure with gate-all-around device

Gallium nitride (GAN) three-dimensional integrated circuit technology

Patents Applicationslast 30 patents

VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

FORK SHEET DEVICE

INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE SOURCE OR DRAIN CONTACT...

SEMICONDUCTOR DEVICE ISOLATION OF CONTACT AND SOURCE/DRAIN STRUCTURES

ACTIVE REGION TRIMMING AFTER FORMATION OF SOURCE/DRAIN COMPONENTS

HIGH-K ISOLATION OF FIN STRUCTURES

SELECTIVE BOTTOM SEED LAYER FORMATION FOR BOTTOM-UP EPITAXY

VERTICAL GATE-ALL-AROUND DEVICE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

METAL INSULATOR METAL CAPACITOR (MIM CAPACITOR)

MULTIPLE GATE DIELECTRICS FOR MONOLITHIC STACKED DEVICES

GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING F...

Semiconductor Device Having FIN Structure and Method of Forming The...

INTEGRATED CIRCUIT STRUCTURE WITH DEEP VIA BAR ISOLATION

MERGED SELF-ALIGNED BACKSIDE CONTACT

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

NANOSHEET DEVICE

FORKSHEET DEVICES WITH DIELECTRIC SPINE AT CELL BOUNDARY

BIAXIAL OXIDE DIRECTION COMPLEMENTARY FIELD EFFECT TRANSISTOR

STATIC RANDOM ACCESS MEMORY DEVICE WITH STACKED FETS

SELF-ALIGNED BACKSIDE CONTACT

PROTECTION DIODE FOR STACKED FIELD EFFECT TRANSISTOR

BACKSIDE EPITAXY FOR SEMICONDUCTOR STRUCTURES

SEMICONDUCTOR STRUCTURE INCLUDING DIFFERENT DEVICES AND METHODS FOR...

INTEGRATED CIRCUIT DEVICE

INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF DESIGNIN...

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FORMING THE SAME

GATE-ALL-AROUND TRANSISTOR WITH HYBRID CONDUCTION MECHANISM AND MAN...