oriented parallel to a substrate

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CPC
H01L29/0673

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0673oriented parallel to a substrate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with silicide gate fill structure
- Patent number 12,183,787
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including an isolation insulating pattern on...
- Patent number 12,183,732
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Inwon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ribbon or wire transistor stack with selective dipole threshold vol...
- Patent number 12,183,739
- Issue date Dec 31, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,183,741
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement comprising a source pad, gate pad, drain...
- Patent number 12,183,788
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Shih-Wei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage modulation for gate-all-around FET architecture
- Patent number 12,183,798
- Issue date Dec 31, 2024
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside power rail structure and methods of forming same
- Patent number 12,183,678
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor FET devices with epitaxial quality improvement
- Patent number 12,176,434
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature separation structure
- Patent number 12,178,032
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Chun Keng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicide gate fill structure
- Patent number 12,176,392
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked nanosheet transistor with defect free channel
- Patent number 12,176,416
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode
- Patent number 12,176,441
- Issue date Dec 24, 2024
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Katsuhiko Fukasaku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device
- Patent number 12,178,031
- Issue date Dec 24, 2024
- SOCIONEXT INC.
- Yoshinobu Yamagami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire/nanosheet device with support portion, method of manufactu...
- Patent number 12,176,393
- Issue date Dec 24, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device with nanostructure channels
- Patent number 12,170,227
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Te Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around device with trimmed channel and dipoled dielectric...
- Patent number 12,170,231
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optoelectronic synaptic memristor
- Patent number 12,169,773
- Issue date Dec 17, 2024
- Beihang University
- Anping Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Field effect transistor with vertical nanowire in channel region an...
- Patent number 12,170,315
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ali Razavieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structures for semiconductor devices
- Patent number 12,170,335
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structures and methods of forming the same in field-effec...
- Patent number 12,170,334
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi Ning Ju
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and methods of forming the same
- Patent number 12,166,076
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jen-Hong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 12,166,110
- Issue date Dec 10, 2024
- Adeia Semiconductor Solutions LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming interconnect structure having a barrier layer
- Patent number 12,165,975
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Cheng Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors comprising a vertical stack of elongated semiconductor...
- Patent number 12,165,869
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method for forming the same
- Patent number 12,165,947
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Sheh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Packaged semiconductor devices including backside power rails and m...
- Patent number 12,166,016
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chi-Yi Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with power control circuit having various...
- Patent number 12,166,029
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Jui Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shared bit lines for memory cells
- Patent number 12,160,985
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ping-Wei Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-planar gate all-around device and method of fabrication thereof
- Patent number RE50222
- Issue date Nov 26, 2024
- Sony Group Corporation
- Willy Rachmady
Information Patent Grant
Semiconductor device and method
- Patent number 12,154,986
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STACKED MULTI-GATE DEVICE WITH REDUCED CONTACT RESISTANCE AND METHO...
- Publication number 20250006561
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Kan HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHANNEL-SYMMETRIC GATE
- Publication number 20250006810
- Publication date Jan 2, 2025
- Intel Corporation
- Shao-Ming Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250006811
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-TYPE TRANSISTOR FABRICATION IN COMPLEMENTARY FET (CFET) DEVICES
- Publication number 20250006812
- Publication date Jan 2, 2025
- Intel Corporation
- Sudipto Naskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250006817
- Publication date Jan 2, 2025
- Samsung Electronics Co., Ltd.
- Sungmin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED NANOSHEET FETS WITH GATE DIELECTRIC FILL
- Publication number 20250006736
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Biswanath Senapati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED CMOS TRANSISTOR STRUCTURES WITH COMPLEMENTARY CHANNEL MATER...
- Publication number 20250006737
- Publication date Jan 2, 2025
- Intel Corporation
- Aryan Navabi-Shirazi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING REDUCED END CAP
- Publication number 20250006787
- Publication date Jan 2, 2025
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH DUAL LAYER ISOLATION STRUCTURE AND METHOD
- Publication number 20250006548
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsien-Chih HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20250006559
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Siao-Jing Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-SIDED INTEGRATED CIRCUIT WITH STABILIZING CAGE
- Publication number 20250006590
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Nicholas Alexander POLOMOFF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH CONDUCTIVITY TRANSISTOR CONTACTS COMPRISING GALLIUM ENRICHED L...
- Publication number 20250006806
- Publication date Jan 2, 2025
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACER LINERS
- Publication number 20250006808
- Publication date Jan 2, 2025
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250006815
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kao-Cheng LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS
- Publication number 20250006841
- Publication date Jan 2, 2025
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PACKAGED SEMICONDUCTOR DEVICES INCLUDING BACKSIDE POWER RAILS AND M...
- Publication number 20250006705
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chi-Yi Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS WITH DIELECTRIC INSULATOR LAYERS
- Publication number 20250006730
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250006789
- Publication date Jan 2, 2025
- Samsung Electronics Co., Ltd.
- Bo Kyung SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET WITH LOW PARASITIC-CAPACITANCE GATE
- Publication number 20250006786
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Backside Via and Dual Side Power Rail For Epitaxial Source/Drain St...
- Publication number 20250006557
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250006558
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lung Tung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20250006803
- Publication date Jan 2, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY,, LTD.
- Yuting CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL NANOSHEET FET FORMATION WITH INCREASED CURRENT
- Publication number 20250006820
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250006827
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH METAL GATE STRUCTURE AND FABRICATION METH...
- Publication number 20250006829
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-I Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250006830
- Publication date Jan 2, 2025
- Samsung Electronics Co., Ltd.
- Jongryeol YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES...
- Publication number 20250006734
- Publication date Jan 2, 2025
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...
- Publication number 20250006739
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET HEIGHT CONTROL WITH DENSE OXIDE SHALLOW TRENCH ISOLATION
- Publication number 20250006788
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GATE-ALL-AROUND TFET DEVICE
- Publication number 20250006822
- Publication date Jan 2, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Na Zhou
- H01 - BASIC ELECTRIC ELEMENTS

oriented parallel to a substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device with silicide gate fill structure

Semiconductor devices including an isolation insulating pattern on...

Ribbon or wire transistor stack with selective dipole threshold vol...

Semiconductor device

Semiconductor arrangement comprising a source pad, gate pad, drain...

Threshold voltage modulation for gate-all-around FET architecture

Backside power rail structure and methods of forming same

Strained semiconductor FET devices with epitaxial quality improvement

Source/drain feature separation structure

Semiconductor device with silicide gate fill structure

Stacked nanosheet transistor with defect free channel

Diode

Semiconductor storage device

Nanowire/nanosheet device with support portion, method of manufactu...

Stacked semiconductor device with nanostructure channels

Gate-all-around device with trimmed channel and dipoled dielectric...

Optoelectronic synaptic memristor

Field effect transistor with vertical nanowire in channel region an...

Epitaxial structures for semiconductor devices

Isolation structures and methods of forming the same in field-effec...

Semiconductor device and methods of forming the same

Nanosheet channel-to-source and drain isolation

Method of forming interconnect structure having a barrier layer

Transistors comprising a vertical stack of elongated semiconductor...

Semiconductor devices and method for forming the same

Packaged semiconductor devices including backside power rails and m...

Integrated circuit device with power control circuit having various...

Shared bit lines for memory cells

Non-planar gate all-around device and method of fabrication thereof

Semiconductor device and method

Patents Applicationslast 30 patents

STACKED MULTI-GATE DEVICE WITH REDUCED CONTACT RESISTANCE AND METHO...

TRANSISTOR WITH CHANNEL-SYMMETRIC GATE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

N-TYPE TRANSISTOR FABRICATION IN COMPLEMENTARY FET (CFET) DEVICES

SEMICONDUCTOR DEVICES

STACKED NANOSHEET FETS WITH GATE DIELECTRIC FILL

STACKED CMOS TRANSISTOR STRUCTURES WITH COMPLEMENTARY CHANNEL MATER...

INTEGRATED CIRCUIT STRUCTURES HAVING REDUCED END CAP

FIELD EFFECT TRANSISTOR WITH DUAL LAYER ISOLATION STRUCTURE AND METHOD

GATE ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME

DOUBLE-SIDED INTEGRATED CIRCUIT WITH STABILIZING CAGE

HIGH CONDUCTIVITY TRANSISTOR CONTACTS COMPRISING GALLIUM ENRICHED L...

INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACER LINERS

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS

PACKAGED SEMICONDUCTOR DEVICES INCLUDING BACKSIDE POWER RAILS AND M...

STACKED TRANSISTORS WITH DIELECTRIC INSULATOR LAYERS

SEMICONDUCTOR DEVICE

STACKED FET WITH LOW PARASITIC-CAPACITANCE GATE

Backside Via and Dual Side Power Rail For Epitaxial Source/Drain St...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

TUNNEL NANOSHEET FET FORMATION WITH INCREASED CURRENT

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE WITH METAL GATE STRUCTURE AND FABRICATION METH...

SEMICONDUCTOR DEVICE

PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES...

COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...

NANOSHEET HEIGHT CONTROL WITH DENSE OXIDE SHALLOW TRENCH ISOLATION

METHOD FOR MANUFACTURING GATE-ALL-AROUND TFET DEVICE