Programmable transistors with more than two possible different levels of programmation

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H01L29/7887

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7887Programmable transistors with more than two possible different levels of programmation

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 11,862,245
- Issue date Jan 2, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multiple floating gates for multi-level c...
- Patent number 11,810,983
- Issue date Nov 7, 2023
- UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Tae Sik Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around floating-gate field effect memory transistor constr...
- Patent number 11,769,542
- Issue date Sep 26, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 11,682,736
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chun Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hafnium oxide-based ferroelectric field effect transistor and manuf...
- Patent number 11,502,083
- Issue date Nov 15, 2022
- Xiangtan University
- Min Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 11,488,665
- Issue date Nov 1, 2022
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Quantum dot channel (QDC) quantum dot gate transistors, memories an...
- Patent number 11,251,270
- Issue date Feb 15, 2022
- Faquir Chand Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate transistor and memory device using the same
- Patent number 11,081,595
- Issue date Aug 3, 2021
- Macronix International Co., Ltd.
- Cheng-Lin Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device including two-dimensional material and ap...
- Patent number 11,024,748
- Issue date Jun 1, 2021
- Samsung Electronics Co., Ltd.
- Jaeho Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Structure of memory device and fabrication method thereof
- Patent number 10,868,197
- Issue date Dec 15, 2020
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) structure with front and back gates
- Patent number 10,840,383
- Issue date Nov 17, 2020
- QUALCOMM Incorporated
- Qingqing Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 10,825,520
- Issue date Nov 3, 2020
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density split-gate memory cell
- Patent number 10,658,027
- Issue date May 19, 2020
- Silicon Storage Technology, Inc.
- Nhan Do
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with different material layers in element sepa...
- Patent number 10,622,443
- Issue date Apr 14, 2020
- Rohm Co., Ltd.
- Kunihiko Iwamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor storage device and method for manufacturi...
- Patent number 10,553,729
- Issue date Feb 4, 2020
- TOSHIBA MEMORY CORPORATION
- Takamitsu Ishihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 10,468,102
- Issue date Nov 5, 2019
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3-D semiconductor device and method for manufacturing the same
- Patent number 10,373,968
- Issue date Aug 6, 2019
- Institute of Microelectronics, Chinese Academy of Sciences
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a flash memory
- Patent number 10,243,084
- Issue date Mar 26, 2019
- United Microelectronics Corp.
- Chih-Jung Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
3D memory
- Patent number 10,170,639
- Issue date Jan 1, 2019
- Micron Technology, Inc.
- John Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor devices, memory cells, and arrays of memory cells
- Patent number 10,134,916
- Issue date Nov 20, 2018
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor storage device and method for manufacturi...
- Patent number 10,074,749
- Issue date Sep 11, 2018
- TOSHIBA MEMORY CORPORATION
- Takamitsu Ishihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic chip manufacturing method
- Patent number 10,014,308
- Issue date Jul 3, 2018
- STMicroelectronics (Crolles 2) SAS
- Stephane Zoll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual channel memory
- Patent number 9,997,640
- Issue date Jun 12, 2018
- EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Zhijiong Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Fin-based nonvolatile memory structures, integrated circuits with s...
- Patent number 9,911,867
- Issue date Mar 6, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ming-Tsang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND flash memory and fabrication methods thereof
- Patent number 9,911,593
- Issue date Mar 6, 2018
- SEIMCONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Erhu Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of programming a continuous-channel flash memory device
- Patent number 9,892,790
- Issue date Feb 13, 2018
- Silicon Storage Technology, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating memory structure
- Patent number 9,786,794
- Issue date Oct 10, 2017
- Macronix International Co., Ltd.
- Cheng-Hsien Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated bit-line airgap formation and gate stack post clean
- Patent number 9,773,695
- Issue date Sep 26, 2017
- Applied Materials, Inc.
- Vinod R. Purayath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 9,761,311
- Issue date Sep 12, 2017
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device and manufacturing method thereof
- Patent number 9,691,907
- Issue date Jun 27, 2017
- United Microelectronics Corp.
- Shih-Chang Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CELL AND ARRAY STRUCTURE OF NON-VOLATILE MEMORY AND ASSOCIAT...
- Publication number 20240161833
- Publication date May 16, 2024
- EMEMORY TECHNOLOGY INC.
- Hsueh-Wei CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
Field Effect Transistor Constructions and Methods of Programming Fi...
- Publication number 20230402082
- Publication date Dec 14, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230268446
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chun SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20230045758
- Publication date Feb 9, 2023
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
NEUROMORPHIC SYNAPSE DEVICE WITH EXCELLENT LINEARITY CHARACTERISTIC...
- Publication number 20220270676
- Publication date Aug 25, 2022
- Korea Advanced Institute of Science and Technology
- Yang-Kyu CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220216343
- Publication date Jul 7, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Chun SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220045217
- Publication date Feb 10, 2022
- Ulsan National Institute of Science and Technology
- Tae Sik YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HAFNIUM OXIDE-BASED FERROELECTRIC FIELD EFFECT TRANSISTOR AND MANUF...
- Publication number 20220020747
- Publication date Jan 20, 2022
- XIANGTAN UNIVERSITY
- Min LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE TRANSISTOR AND MEMORY DEVICE USING THE SAME
- Publication number 20210242347
- Publication date Aug 5, 2021
- Macronix International Co., Ltd.
- Cheng-Lin SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20210050059
- Publication date Feb 18, 2021
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURE OF MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20200373436
- Publication date Nov 26, 2020
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) STRUCTURE WITH FRONT AND BACK GATES
- Publication number 20200365740
- Publication date Nov 19, 2020
- QUALCOMM Incorporated
- Qingqing LIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM DOT CHANNEL (QDC) QUANTUM DOT GATE TRANSISTORS, MEMORIES AN...
- Publication number 20200328277
- Publication date Oct 15, 2020
- Faquir Chand Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20200035301
- Publication date Jan 30, 2020
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
High Density Split-Gate Memory Cell
- Publication number 20190172529
- Publication date Jun 6, 2019
- Silicon Storage Technology, Inc.
- Nhan Do
- G11 - INFORMATION STORAGE
Information Patent Application
FLUORINE DOPED NON-VOLATILE MEMORY CELLS AND METHODS FOR FORMING TH...
- Publication number 20190165180
- Publication date May 30, 2019
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Hung-Lin CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURI...
- Publication number 20190027609
- Publication date Jan 24, 2019
- Toshiba Memory Corporation
- Takamitsu ISHIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND AP...
- Publication number 20180358470
- Publication date Dec 13, 2018
- Samsung Electronics Co., Ltd.
- Jaeho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC CHIP MANUFACTURING METHOD
- Publication number 20180286878
- Publication date Oct 4, 2018
- STMicroelectronics (Crolles 2) SAS
- Stephane Zoll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED NONVOLATILE MEMORY STRUCTURES, INTEGRATED CIRCUITS WITH S...
- Publication number 20180006158
- Publication date Jan 4, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ming-Tsang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20170365340
- Publication date Dec 21, 2017
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
NEURAL NETWORK USING FLOATING GATE TRANSISTOR
- Publication number 20170364790
- Publication date Dec 21, 2017
- International Business Machines Corporation
- Effendi Leobandung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ELECTRONIC CHIP MANUFACTURING METHOD
- Publication number 20170200730
- Publication date Jul 13, 2017
- STMicroelectronics (Crolles 2) SAS
- Stephane Zoll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND FLASH MEMORY AND FABRICATION METHODS THEREOF
- Publication number 20170170011
- Publication date Jun 15, 2017
- Semiconductor Manufacturing International (Beijing) Corporation
- ERHU ZHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3 - D SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20170047340
- Publication date Feb 16, 2017
- Institute of Microelectronics, Chinese Academy of Sciences
- Zongliang HUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED BIT-LINE AIRGAP FORMATION AND GATE STACK POST CLEAN
- Publication number 20170040207
- Publication date Feb 9, 2017
- Applied Materials, Inc.
- Vinod R. Purayath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A FLASH MEMORY
- Publication number 20170018649
- Publication date Jan 19, 2017
- UNITED MICROELECTRONICS CORP.
- Chih-Jung Chen
- G11 - INFORMATION STORAGE
Information Patent Application
DUAL CHANNEL MEMORY
- Publication number 20160372602
- Publication date Dec 22, 2016
- EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Zhijiong Luo
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20160329399
- Publication date Nov 10, 2016
- Rohm Co., Ltd.
- Kunihiko IWAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE
- Publication number 20160268439
- Publication date Sep 15, 2016
- KABUSHIKI KAISHA TOSHIBA
- Wataru SAKAMOTO
- H01 - BASIC ELECTRIC ELEMENTS

Programmable transistors with more than two possible different levels of programmation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor memory having both volatile and non-volatile function...

Semiconductor device with multiple floating gates for multi-level c...

Gate-all-around floating-gate field effect memory transistor constr...

Semiconductor device

Hafnium oxide-based ferroelectric field effect transistor and manuf...

Semiconductor memory having both volatile and non-volatile function...

Quantum dot channel (QDC) quantum dot gate transistors, memories an...

Multi-gate transistor and memory device using the same

Nonvolatile memory device including two-dimensional material and ap...

Structure of memory device and fabrication method thereof

Non-volatile memory (NVM) structure with front and back gates

Semiconductor memory having both volatile and non-volatile function...

High density split-gate memory cell

Semiconductor device with different material layers in element sepa...

Nonvolatile semiconductor storage device and method for manufacturi...

Semiconductor memory having both volatile and non-volatile function...

3-D semiconductor device and method for manufacturing the same

Method for fabricating a flash memory

3D memory

Transistor devices, memory cells, and arrays of memory cells

Nonvolatile semiconductor storage device and method for manufacturi...

Electronic chip manufacturing method

Dual channel memory

Fin-based nonvolatile memory structures, integrated circuits with s...

NAND flash memory and fabrication methods thereof

Method of programming a continuous-channel flash memory device

Method of fabricating memory structure

Integrated bit-line airgap formation and gate stack post clean

Semiconductor memory having both volatile and non-volatile function...

Non-volatile memory device and manufacturing method thereof

Patents Applicationslast 30 patents

MEMORY CELL AND ARRAY STRUCTURE OF NON-VOLATILE MEMORY AND ASSOCIAT...

Field Effect Transistor Constructions and Methods of Programming Fi...

SEMICONDUCTOR DEVICE

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

NEUROMORPHIC SYNAPSE DEVICE WITH EXCELLENT LINEARITY CHARACTERISTIC...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

HAFNIUM OXIDE-BASED FERROELECTRIC FIELD EFFECT TRANSISTOR AND MANUF...

MULTI-GATE TRANSISTOR AND MEMORY DEVICE USING THE SAME

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

STRUCTURE OF MEMORY DEVICE AND FABRICATION METHOD THEREOF

NON-VOLATILE MEMORY (NVM) STRUCTURE WITH FRONT AND BACK GATES

QUANTUM DOT CHANNEL (QDC) QUANTUM DOT GATE TRANSISTORS, MEMORIES AN...

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

High Density Split-Gate Memory Cell

FLUORINE DOPED NON-VOLATILE MEMORY CELLS AND METHODS FOR FORMING TH...

NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURI...

NONVOLATILE MEMORY DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND AP...

ELECTRONIC CHIP MANUFACTURING METHOD

FIN-BASED NONVOLATILE MEMORY STRUCTURES, INTEGRATED CIRCUITS WITH S...

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

NEURAL NETWORK USING FLOATING GATE TRANSISTOR

ELECTRONIC CHIP MANUFACTURING METHOD

NAND FLASH MEMORY AND FABRICATION METHODS THEREOF

3 - D SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

INTEGRATED BIT-LINE AIRGAP FORMATION AND GATE STACK POST CLEAN

METHOD FOR FABRICATING A FLASH MEMORY

DUAL CHANNEL MEMORY

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

NON-VOLATILE MEMORY DEVICE