Raised source or drain electrodes self aligned with the gate

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H01L29/41783

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/41783Raised source or drain electrodes self aligned with the gate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with airgap spacers
- Patent number 12,176,405
- Issue date Dec 24, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Khee Yong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin transistors and manufacturing method...
- Patent number 12,170,282
- Issue date Dec 17, 2024
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside electrical contacts to buried power rails
- Patent number 12,136,655
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with a contact to source/drain layers and f...
- Patent number 12,131,990
- Issue date Oct 29, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,125,898
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Liang Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with self-aligned body and hybrid source
- Patent number 12,113,106
- Issue date Oct 8, 2024
- Amplexia, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for improvement of photoresist patterning profile
- Patent number 12,087,634
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ke-Ming Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 12,080,716
- Issue date Sep 3, 2024
- Renesas Electronics Corporation
- Takaaki Tsunomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap around silicide for FinFETs
- Patent number 12,068,383
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut and fin trim isolation for advanced integrated circuit str...
- Patent number 12,057,492
- Issue date Aug 6, 2024
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate contact over an active region
- Patent number 12,046,670
- Issue date Jul 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Zhixing Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a heterostructure or a stacked semiconducto...
- Patent number 12,027,592
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a source/drain contact plug with an upw...
- Patent number 12,014,957
- Issue date Jun 18, 2024
- Samsung Electronics Co., Ltd.
- Sungmoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device suppressing rounded shapes of source/drain con...
- Patent number 12,009,399
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Jyun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inter-level handshake for dense 3D logic integration
- Patent number 12,002,862
- Issue date Jun 4, 2024
- Tokyo Electron Limited
- Lars Liebmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device including field-effect...
- Patent number 11,996,448
- Issue date May 28, 2024
- Renesas Electronics Corporation
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,935,792
- Issue date Mar 19, 2024
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate structure and method of fabricating the same
- Patent number 11,929,418
- Issue date Mar 12, 2024
- United Microelectronics Corp.
- Jie-Ning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having source/drain structure and method of making
- Patent number 11,923,200
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with self-aligned gate and self-aligned source/drain ter...
- Patent number 11,916,119
- Issue date Feb 27, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Zhong-Xiang He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,908,867
- Issue date Feb 20, 2024
- Samsung Electronics Co., Ltd.
- Myoung-Sun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier layer for source and drain structures to increase...
- Patent number 11,901,413
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuei-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin patterning for advanced integrated circuit structure fabrication
- Patent number 11,881,520
- Issue date Jan 23, 2024
- Intel Corporation
- Curtis Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate structure and method of fabricating the same
- Patent number 11,881,518
- Issue date Jan 23, 2024
- United Microelectronics Corp.
- Jie-Ning Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Performance LDMOS Structures
- Publication number 20240421225
- Publication date Dec 19, 2024
- MURATA MANUFACTURING CO., LTD.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240395823
- Publication date Nov 28, 2024
- RENESAS ELECTRONICS CORPORATION
- Takaaki TSUNOMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240387698
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Liang PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D-Channel Transistor Structure with Asymmetric Substrate Contacts
- Publication number 20240387657
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ting Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR IMPROVEMENT OF PHOTORESIST PATTERNING PROFILE
- Publication number 20240379441
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ke-Ming CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20240332399
- Publication date Oct 3, 2024
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DIFFERENT SIZED EPITAXIAL STRUCTURES
- Publication number 20240313054
- Publication date Sep 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20240304690
- Publication date Sep 12, 2024
- The Research Foundation for the State University of New York
- Woongje SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240274670
- Publication date Aug 15, 2024
- RENESAS ELECTRONICS CORPORATION
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE...
- Publication number 20240243174
- Publication date Jul 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES INCLUDING SELF-ALIGNED OHMIC CONTACTS AND CONTAC...
- Publication number 20240194751
- Publication date Jun 13, 2024
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTUR...
- Publication number 20240186403
- Publication date Jun 6, 2024
- Intel Corporation
- Jeffrey S. LEIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240178293
- Publication date May 30, 2024
- Samsung Electronics Co., Ltd.
- Hyumin YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...
- Publication number 20240162332
- Publication date May 16, 2024
- Intel Corporation
- Subhash M. JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FDSOI DEVICE INCLUDING SELF-ALIGNED DIFFUSION BREAK
- Publication number 20240072059
- Publication date Feb 29, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...
- Publication number 20240047461
- Publication date Feb 8, 2024
- SONY CORPORATION
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20240047556
- Publication date Feb 8, 2024
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20230420545
- Publication date Dec 28, 2023
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE JUMPER CONNECTING ADJACENT GATES
- Publication number 20230411473
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY DEVICES WITH THICKENED SOURCE/DRAIN SILICIDE
- Publication number 20230402516
- Publication date Dec 14, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Young Way Teh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE HAVING FLAT-TOP EPITAXIAL FEATURES AND METHOD OF MAKI...
- Publication number 20230378181
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20230361202
- Publication date Nov 9, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
- Blandine DURIEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230326970
- Publication date Oct 12, 2023
- Samsung Electronics Co., Ltd.
- Namkyu CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH SELECTIVE SILICIDE CONTACTS THEREON
- Publication number 20230317789
- Publication date Oct 5, 2023
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATES TO ENHANCE TRANSISTOR STRAIN
- Publication number 20230307455
- Publication date Sep 28, 2023
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE SELF-ALIGNED PENETRATIN...
- Publication number 20230290844
- Publication date Sep 14, 2023
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES WITH UNIFORM AND CONFORMAL GATE...
- Publication number 20230290843
- Publication date Sep 14, 2023
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...
- Publication number 20230282518
- Publication date Sep 7, 2023
- SK HYNIX INC.
- Dong-Soo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...
- Publication number 20230261089
- Publication date Aug 17, 2023
- Intel Corporation
- Subhash M. JOSHI
- H01 - BASIC ELECTRIC ELEMENTS

Raised source or drain electrodes self aligned with the gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gate line plug structures for advanced integrated circuit structure...

Plugs for interconnect lines for advanced integrated circuit struct...

Field-effect transistors with airgap spacers

Semiconductor device with fin transistors and manufacturing method...

Contact over active gate structures for advanced integrated circuit...

Backside electrical contacts to buried power rails

Semiconductor structure with a contact to source/drain layers and f...

Semiconductor device and manufacturing method thereof

LDMOS with self-aligned body and hybrid source

Methods for improvement of photoresist patterning profile

Method of manufacturing semiconductor device

Wrap around silicide for FinFETs

Gate cut and fin trim isolation for advanced integrated circuit str...

Semiconductor device having a gate contact over an active region

Method of manufacturing a heterostructure or a stacked semiconducto...

Semiconductor device having a source/drain contact plug with an upw...

Semiconductor device suppressing rounded shapes of source/drain con...

Inter-level handshake for dense 3D logic integration

Manufacturing method of semiconductor device including field-effect...

Dual metal gate structure having portions of metal gate layers in c...

Heterogeneous metal line compositions for advanced integrated circu...

Trench contact structures for advanced integrated circuit structure...

Semiconductor device having buried gate structure and method for fa...

Metal gate structure and method of fabricating the same

Integrated circuits having source/drain structure and method of making

Transistor with self-aligned gate and self-aligned source/drain ter...

Semiconductor device and method for fabricating the same

Diffusion barrier layer for source and drain structures to increase...

Fin patterning for advanced integrated circuit structure fabrication

Metal gate structure and method of fabricating the same

Patents Applicationslast 30 patents

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

High-Performance LDMOS Structures

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

2D-Channel Transistor Structure with Asymmetric Substrate Contacts

METHODS FOR IMPROVEMENT OF PHOTORESIST PATTERNING PROFILE

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

SEMICONDUCTOR DEVICE WITH DIFFERENT SIZED EPITAXIAL STRUCTURES

FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE

DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE...

TRANSISTOR DEVICES INCLUDING SELF-ALIGNED OHMIC CONTACTS AND CONTAC...

DUAL METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTUR...

SEMICONDUCTOR DEVICE

TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...

FDSOI DEVICE INCLUDING SELF-ALIGNED DIFFUSION BREAK

SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

SELF-ALIGNED GATE JUMPER CONNECTING ADJACENT GATES

FLASH MEMORY DEVICES WITH THICKENED SOURCE/DRAIN SILICIDE

FINFET DEVICE HAVING FLAT-TOP EPITAXIAL FEATURES AND METHOD OF MAKI...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SOURCE OR DRAIN STRUCTURES WITH SELECTIVE SILICIDE CONTACTS THEREON

REPLACEMENT METAL GATES TO ENHANCE TRANSISTOR STRAIN

INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE SELF-ALIGNED PENETRATIN...

CONTACT OVER ACTIVE GATE STRUCTURES WITH UNIFORM AND CONFORMAL GATE...

SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...

TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...