Raised source or drain electrodes self aligned with the gate

Industry

CPC
H01L29/41783

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/41783Raised source or drain electrodes self aligned with the gate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,935,792
- Issue date Mar 19, 2024
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate structure and method of fabricating the same
- Patent number 11,929,418
- Issue date Mar 12, 2024
- United Microelectronics Corp.
- Jie-Ning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having source/drain structure and method of making
- Patent number 11,923,200
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with self-aligned gate and self-aligned source/drain ter...
- Patent number 11,916,119
- Issue date Feb 27, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Zhong-Xiang He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,908,867
- Issue date Feb 20, 2024
- Samsung Electronics Co., Ltd.
- Myoung-Sun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier layer for source and drain structures to increase...
- Patent number 11,901,413
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuei-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin patterning for advanced integrated circuit structure fabrication
- Patent number 11,881,520
- Issue date Jan 23, 2024
- Intel Corporation
- Curtis Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate structure and method of fabricating the same
- Patent number 11,881,518
- Issue date Jan 23, 2024
- United Microelectronics Corp.
- Jie-Ning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced-form-factor transistor with self-aligned terminals and adju...
- Patent number 11,869,972
- Issue date Jan 9, 2024
- Etron Technology, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact on FinFET
- Patent number 11,854,898
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with negative capacitance structure
- Patent number 11,855,205
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing memory device
- Patent number 11,837,643
- Issue date Dec 5, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chien Hung Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin-type field effect transistor
- Patent number 11,824,057
- Issue date Nov 21, 2023
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut and fin trim isolation for advanced integrated circuit str...
- Patent number 11,799,015
- Issue date Oct 24, 2023
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device having flat-top epitaxial features and method of maki...
- Patent number 11,769,771
- Issue date Sep 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 11,764,285
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Chuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,764,289
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Blandine Duriez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced local threshold voltage variation MOSFET using multiple lay...
- Patent number 11,757,002
- Issue date Sep 12, 2023
- SemiWise Limited
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,694,930
- Issue date Jul 4, 2023
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 11,695,012
- Issue date Jul 4, 2023
- Renesas Electronics Corporation
- Takaaki Tsunomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,664,439
- Issue date May 30, 2023
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 11,658,211
- Issue date May 23, 2023
- Renesas Electronics Corporation
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried channel semiconductor device and method for manufacturing th...
- Patent number 11,646,312
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin cut and fin trim isolation for advanced integrated circuit stru...
- Patent number 11,646,359
- Issue date May 9, 2023
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation for advanced integrated circuit structure fabrication
- Patent number 11,640,985
- Issue date May 2, 2023
- Intel Corporation
- Michael L. Hattendorf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage field effect transistors with self-aligned silicide co...
- Patent number 11,626,496
- Issue date Apr 11, 2023
- SanDisk Technologies LLC
- Jun Akaiwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for metal silicide deposition
- Patent number 11,615,986
- Issue date Mar 28, 2023
- Applied Materials, Inc.
- Xuebin Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FDSOI DEVICE INCLUDING SELF-ALIGNED DIFFUSION BREAK
- Publication number 20240072059
- Publication date Feb 29, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...
- Publication number 20240047461
- Publication date Feb 8, 2024
- SONY CORPORATION
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20240047556
- Publication date Feb 8, 2024
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20230420545
- Publication date Dec 28, 2023
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE JUMPER CONNECTING ADJACENT GATES
- Publication number 20230411473
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY DEVICES WITH THICKENED SOURCE/DRAIN SILICIDE
- Publication number 20230402516
- Publication date Dec 14, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Young Way Teh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE HAVING FLAT-TOP EPITAXIAL FEATURES AND METHOD OF MAKI...
- Publication number 20230378181
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20230361202
- Publication date Nov 9, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
- Blandine DURIEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230326970
- Publication date Oct 12, 2023
- Samsung Electronics Co., Ltd.
- Namkyu CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH SELECTIVE SILICIDE CONTACTS THEREON
- Publication number 20230317789
- Publication date Oct 5, 2023
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATES TO ENHANCE TRANSISTOR STRAIN
- Publication number 20230307455
- Publication date Sep 28, 2023
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE SELF-ALIGNED PENETRATIN...
- Publication number 20230290844
- Publication date Sep 14, 2023
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES WITH UNIFORM AND CONFORMAL GATE...
- Publication number 20230290843
- Publication date Sep 14, 2023
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...
- Publication number 20230282518
- Publication date Sep 7, 2023
- SK HYNIX INC.
- Dong-Soo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...
- Publication number 20230261089
- Publication date Aug 17, 2023
- Intel Corporation
- Subhash M. JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON NANOSHEET AND 2D PARALLEL CHANNEL VERTICAL FET DESIGN WITH...
- Publication number 20230261067
- Publication date Aug 17, 2023
- TOKYO ELECTRON LIMITED
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20230253456
- Publication date Aug 10, 2023
- RENESAS ELECTRONICS CORPORATION
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR IMPROVEMENT OF PHOTORESIST PATTERNING PROFILE
- Publication number 20230238282
- Publication date Jul 27, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ke-Ming CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ASYMMETRICAL SOURCE/DRAIN REGION AND M...
- Publication number 20230223442
- Publication date Jul 13, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- Kuo-Cheng CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Publication number 20230207664
- Publication date Jun 29, 2023
- Intel Corporation
- Michael L. HATTENDORF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FIN FINFET DEVICE INCLUDING EPITAXIAL GROWTH BARRIER ON OUTSI...
- Publication number 20230197720
- Publication date Jun 22, 2023
- Bell Semiconductor, LLC
- Qing LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20230155021
- Publication date May 18, 2023
- Mitsubishi Electric Corporation
- Takaaki TOMINAGA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20230144607
- Publication date May 11, 2023
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH FACETED, RAISED SOURCE/DRAIN REGION
- Publication number 20230146952
- Publication date May 11, 2023
- GLOBALFOUNDRIES U.S. Inc.
- George R. MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH SELF-ALIGNED GATE AND SELF-ALIGNED SOURCE/DRAIN TER...
- Publication number 20230139011
- Publication date May 4, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Zhong-Xiang He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE LINE PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...
- Publication number 20230131757
- Publication date Apr 27, 2023
- Intel Corporation
- Byron HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN PATTERNING FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Publication number 20230126174
- Publication date Apr 27, 2023
- Intel Corporation
- Curtis WARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20230101723
- Publication date Mar 30, 2023
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE ELECTRICAL CONTACTS TO BURIED POWER RAILS
- Publication number 20230093101
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR DEVICE
- Publication number 20230058225
- Publication date Feb 23, 2023
- TOKYO ELECTRON LIMITED
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS

Raised source or drain electrodes self aligned with the gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Dual metal gate structure having portions of metal gate layers in c...

Heterogeneous metal line compositions for advanced integrated circu...

Trench contact structures for advanced integrated circuit structure...

Semiconductor device having buried gate structure and method for fa...

Metal gate structure and method of fabricating the same

Integrated circuits having source/drain structure and method of making

Transistor with self-aligned gate and self-aligned source/drain ter...

Semiconductor device and method for fabricating the same

Diffusion barrier layer for source and drain structures to increase...

Fin patterning for advanced integrated circuit structure fabrication

Metal gate structure and method of fabricating the same

Reduced-form-factor transistor with self-aligned terminals and adju...

Wrap-around contact on FinFET

Semiconductor device with negative capacitance structure

Method for manufacturing memory device

Semiconductor device with fin-type field effect transistor

Gate cut and fin trim isolation for advanced integrated circuit str...

FinFET device having flat-top epitaxial features and method of maki...

Method of manufacturing semiconductor device

Method of manufacturing a semiconductor device and a semiconductor...

Reduced local threshold voltage variation MOSFET using multiple lay...

Semiconductor device having buried gate structure and method for fa...

Semiconductor device and manufacturing method of the same

Trench contact structures for advanced integrated circuit structure...

Semiconductor device and manufacturing method of the same

Buried channel semiconductor device and method for manufacturing th...

Fin cut and fin trim isolation for advanced integrated circuit stru...

Trench isolation for advanced integrated circuit structure fabrication

High voltage field effect transistors with self-aligned silicide co...

Methods and apparatus for metal silicide deposition

Patents Applicationslast 30 patents

FDSOI DEVICE INCLUDING SELF-ALIGNED DIFFUSION BREAK

SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

SELF-ALIGNED GATE JUMPER CONNECTING ADJACENT GATES

FLASH MEMORY DEVICES WITH THICKENED SOURCE/DRAIN SILICIDE

FINFET DEVICE HAVING FLAT-TOP EPITAXIAL FEATURES AND METHOD OF MAKI...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SOURCE OR DRAIN STRUCTURES WITH SELECTIVE SILICIDE CONTACTS THEREON

REPLACEMENT METAL GATES TO ENHANCE TRANSISTOR STRAIN

INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE SELF-ALIGNED PENETRATIN...

CONTACT OVER ACTIVE GATE STRUCTURES WITH UNIFORM AND CONFORMAL GATE...

SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...

TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...

SILICON NANOSHEET AND 2D PARALLEL CHANNEL VERTICAL FET DESIGN WITH...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

METHODS FOR IMPROVEMENT OF PHOTORESIST PATTERNING PROFILE

FIELD EFFECT TRANSISTOR WITH ASYMMETRICAL SOURCE/DRAIN REGION AND M...

TRENCH ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

MULTI-FIN FINFET DEVICE INCLUDING EPITAXIAL GROWTH BARRIER ON OUTSI...

SILICON CARBIDE SEMICONDUCTOR DEVICE

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

TRANSISTOR WITH FACETED, RAISED SOURCE/DRAIN REGION

TRANSISTOR WITH SELF-ALIGNED GATE AND SELF-ALIGNED SOURCE/DRAIN TER...

GATE LINE PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...

FIN PATTERNING FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

BACKSIDE ELECTRICAL CONTACTS TO BURIED POWER RAILS

VERTICAL TRANSISTOR DEVICE