Selection of switching materials

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

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H01L45/14Selection of switching materials

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Patents Grantslast 30 patents

Information Patent Grant
Electronic device
- Patent number 11,716,911
- Issue date Aug 1, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnesium ion based synaptic device
- Patent number 11,690,304
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Douglas M. Bishop
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device including a memory element between wiring layers and...
- Patent number 11,683,942
- Issue date Jun 20, 2023
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Jun Sumino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for enlarging the memory window and improving data retentio...
- Patent number 11,682,456
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Fu-Chen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device with a phase change layer and particula...
- Patent number 11,678,593
- Issue date Jun 13, 2023
- Kioxia Corporation
- Katsuyoshi Komatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Step height mitigation in resistive random access memory structures
- Patent number 11,678,592
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices comprising threshold switching materials
- Patent number 11,672,191
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device
- Patent number 11,672,132
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Tae Hong Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Electronic synaptic device and method for manufacturing same
- Patent number 11,672,190
- Issue date Jun 6, 2023
- Industry-University Cooperation Foundation Hanyang University
- Tae Whan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,672,130
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Jonguk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,672,131
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Yumin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory
- Patent number 11,665,907
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Kyung-Hwa Yun
- G11 - INFORMATION STORAGE
Information Patent Grant
Three dimensional semiconductor memory devices
- Patent number 11,665,914
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Si-Ho Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell and method of forming the same
- Patent number 11,659,779
- Issue date May 23, 2023
- Agency for Science, Technology and Research
- Wen Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory structure with efficient heating system
- Patent number 11,659,780
- Issue date May 23, 2023
- International Business Machines Corporation
- Injo Ok
- G11 - INFORMATION STORAGE
Information Patent Grant
Composite electrode material chemistry
- Patent number 11,659,778
- Issue date May 23, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selector device and method of making the same
- Patent number 11,659,781
- Issue date May 23, 2023
- Huazhong University of Science & Technology
- Xiangshui Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memristive device and method based on ion migration over one or mor...
- Patent number 11,657,871
- Issue date May 23, 2023
- AT&T Intellectual Property I, L.P.
- Sheldon Kent Meredith
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Phase-change memory cell
- Patent number 11,653,579
- Issue date May 16, 2023
- Paolo Giuseppe Cappelletti
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices
- Patent number 11,651,995
- Issue date May 16, 2023
- Samsung Electronics Co., Ltd.
- Sangkuk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory structure with positioned doping
- Patent number 11,653,580
- Issue date May 16, 2023
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Sub-stoichiometric metal-oxide thin films
- Patent number 11,646,199
- Issue date May 9, 2023
- International Business Machines Corporation
- John Rozen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-based resistive memory having a plasma-exposed bottom electrode
- Patent number 11,647,680
- Issue date May 9, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with double protective liner
- Patent number 11,647,638
- Issue date May 9, 2023
- Intel Corporation
- Anna Maria Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile tunable capacitive processing unit
- Patent number 11,647,684
- Issue date May 9, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-rectifying resistive memory and fabrication method thereof
- Patent number 11,641,787
- Issue date May 2, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Qing Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive interface material
- Patent number 11,641,788
- Issue date May 2, 2023
- Micron Technology, Inc.
- Andrea Gotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal programmable conducting bridges between conductive lines
- Patent number 11,640,937
- Issue date May 2, 2023
- Tokyo Electron Limited
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,641,786
- Issue date May 2, 2023
- Commissariat a l'Energie Atomique et aux Energies
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ANALOG PROGRAMMABLE RESISTIVE MEMORY
- Publication number 20240237565
- Publication date Jul 11, 2024
- CYBERSWARM, INC.
- Viorel-Georgel Dumitru
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE MEMORY CELL WITH MIXED-MATERIAL SWITCHABLE REGION
- Publication number 20240196766
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Matthew Joseph BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING TH...
- Publication number 20240164224
- Publication date May 16, 2024
- United Microelectronics Corp.
- Kai-Jiun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS-INDUCED FORMING OF OXIDE RRAM
- Publication number 20240155952
- Publication date May 9, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PIEZOELECTRIC MEMORY
- Publication number 20240147873
- Publication date May 2, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G11 - INFORMATION STORAGE
Information Patent Application
ANALOG PROGRAMMABLE RESISTIVE MEMORY
- Publication number 20240138275
- Publication date Apr 25, 2024
- CYBERSWARM, INC.
- Viorel-Georgel Dumitru
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY AND STORAGE ON A SINGLE CHIP
- Publication number 20240130143
- Publication date Apr 18, 2024
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...
- Publication number 20240112730
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT
- Publication number 20240112731
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Application
HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL
- Publication number 20240114807
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Victor W.C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA D...
- Publication number 20240114813
- Publication date Apr 4, 2024
- TetraMem Inc.
- Mingche Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL SIDEWALL HEATER
- Publication number 20240107900
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Boron Surface Passivation of Phase Change Memory Material
- Publication number 20240099166
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...
- Publication number 20240099163
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER
- Publication number 20240090352
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Paul Michael Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20240074337
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hengyuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240074334
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RANDOM NUMBER GENERATION BASED ON THRESHOLD VOLTAGE RANDOMNESS
- Publication number 20240057489
- Publication date Feb 15, 2024
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
RRAM STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20240057487
- Publication date Feb 15, 2024
- UNITED MICROELECTRONICS CORP.
- Kai-Jiun Chang
- G11 - INFORMATION STORAGE
Information Patent Application
RRAM WITH HIGH WORK FUNCTION CAP
- Publication number 20240040940
- Publication date Feb 1, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING-FREE RANDOM-ACCESS MEMORY (RRAM) DEVICES
- Publication number 20240023466
- Publication date Jan 18, 2024
- TetraMem Inc.
- Minxian Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240015989
- Publication date Jan 11, 2024
- SK HYNIX INC.
- Jae Hyun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Bit Storage Device Using Phase Change Material
- Publication number 20240016071
- Publication date Jan 11, 2024
- Toshiba Global Commerce Solutions Holdings Corporation
- Timothy Crockett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...
- Publication number 20240016072
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hengyuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PCM DEVICE
- Publication number 20240008373
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chang-Chih Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL ULTRA-THIN PCM CELL
- Publication number 20240008374
- Publication date Jan 4, 2024
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240008375
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY SWITCH FOR MULTI-BAND FILTER APPLICATIONS AND METHO...
- Publication number 20230422643
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...
- Publication number 20230422642
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL PHASE CHANGE SWITCH DEVICES AND METHODS
- Publication number 20230422644
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS

Selection of switching materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electronic device

Magnesium ion based synaptic device

Memory device including a memory element between wiring layers and...

Methods for enlarging the memory window and improving data retentio...

Semiconductor memory device with a phase change layer and particula...

Step height mitigation in resistive random access memory structures

Semiconductor devices comprising threshold switching materials

Variable resistance memory device

Two-terminal reversibly switchable memory device

Electronic synaptic device and method for manufacturing same

Semiconductor device and method of forming the same

Memory device and method of manufacturing the same

Non-volatile memory

Three dimensional semiconductor memory devices

Memory cell and method of forming the same

Phase change memory structure with efficient heating system

Composite electrode material chemistry

Selector device and method of making the same

Memristive device and method based on ion migration over one or mor...

Phase-change memory cell

Memory devices

Non-volatile memory structure with positioned doping

Sub-stoichiometric metal-oxide thin films

Oxide-based resistive memory having a plasma-exposed bottom electrode

Memory device with double protective liner

Nonvolatile tunable capacitive processing unit

Self-rectifying resistive memory and fabrication method thereof

Resistive interface material

Horizontal programmable conducting bridges between conductive lines

Memory device

Patents Applicationslast 30 patents

ANALOG PROGRAMMABLE RESISTIVE MEMORY

PHASE-CHANGE MEMORY CELL WITH MIXED-MATERIAL SWITCHABLE REGION

RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING TH...

PROCESS-INDUCED FORMING OF OXIDE RRAM

PIEZOELECTRIC MEMORY

ANALOG PROGRAMMABLE RESISTIVE MEMORY

MEMORY AND STORAGE ON A SINGLE CHIP

DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...

MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT

HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL

CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA D...

PHASE CHANGE MEMORY CELL SIDEWALL HEATER

Boron Surface Passivation of Phase Change Memory Material

Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...

RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER

MEMORY DEVICE AND METHOD OF MAKING THE SAME

PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

RANDOM NUMBER GENERATION BASED ON THRESHOLD VOLTAGE RANDOMNESS

RRAM STRUCTURE AND METHOD OF FABRICATING THE SAME

RRAM WITH HIGH WORK FUNCTION CAP

FORMING-FREE RANDOM-ACCESS MEMORY (RRAM) DEVICES

SEMICONDUCTOR DEVICE

Multi-Bit Storage Device Using Phase Change Material

MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...

PCM DEVICE

VERTICAL ULTRA-THIN PCM CELL

MEMORY DEVICE AND FABRICATION METHOD THEREOF

RADIO FREQUENCY SWITCH FOR MULTI-BAND FILTER APPLICATIONS AND METHO...

PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...

VERTICAL PHASE CHANGE SWITCH DEVICES AND METHODS