Selenides

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CPC
H01L45/143

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

Current Industry

H01L45/143Selenides

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Electronic synaptic device and method for manufacturing same
- Patent number 11,672,190
- Issue date Jun 6, 2023
- Industry-University Cooperation Foundation Hanyang University
- Tae Whan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,672,130
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Jonguk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory structure with positioned doping
- Patent number 11,653,580
- Issue date May 16, 2023
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with double protective liner
- Patent number 11,647,638
- Issue date May 9, 2023
- Intel Corporation
- Anna Maria Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,611,039
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Hao Hung
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance variable device with chalcogen-containing layer
- Patent number 11,600,772
- Issue date Mar 7, 2023
- Kioxia Corporation
- Hiroki Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including phase change material layers...
- Patent number 11,563,056
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jau-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered memory cell profiles
- Patent number 11,545,625
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device including variable resistance layer
- Patent number 11,538,859
- Issue date Dec 27, 2022
- Samsung Electronics Co., Ltd.
- Kyunghwan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage device and storage unit with a chalcogen element
- Patent number 11,522,132
- Issue date Dec 6, 2022
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Kazuhiro Ohba
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 11,502,132
- Issue date Nov 15, 2022
- Samsung Electronics Co., Ltd.
- Jinwook Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a variable resistance memory device
- Patent number 11,482,670
- Issue date Oct 25, 2022
- Samsung Electronics Co., Ltd.
- Jiho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device with resistance change memory element a...
- Patent number 11,482,572
- Issue date Oct 25, 2022
- Kioxia Corporation
- Hiroyuki Kanaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material implication operations in memory
- Patent number 11,475,951
- Issue date Oct 18, 2022
- Micron Technology, Inc.
- Agostino Pirovano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switch device, storage apparatus, and memory system incorporating b...
- Patent number 11,462,685
- Issue date Oct 4, 2022
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Hiroaki Sei
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device
- Patent number 11,430,953
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Huei-Tsz Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered cell profile and fabrication
- Patent number 11,404,637
- Issue date Aug 2, 2022
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance memory devices implementing two-dimensional tra...
- Patent number 11,393,980
- Issue date Jul 19, 2022
- Samsung Electronics Co., Ltd.
- Hideki Horii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stack of horizontally extending and vertically overlapping features...
- Patent number 11,393,748
- Issue date Jul 19, 2022
- Micron Technology, Inc.
- Sanh D. Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Carbon-based volatile and non-volatile memristors
- Patent number 11,393,976
- Issue date Jul 19, 2022
- Massachusetts Institute of Technology
- Pablo Jarillo-Herrero
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells having resistors and formation of the same
- Patent number 11,374,059
- Issue date Jun 28, 2022
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory material, and memory device applying the same
- Patent number 11,355,552
- Issue date Jun 7, 2022
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices with selector layer and methods of forming the same
- Patent number 11,342,380
- Issue date May 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor logic circuits including a non-volatile memory cell
- Patent number 11,322,202
- Issue date May 3, 2022
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Metal-insulator-metal (MIM) capacitor and semiconductor device
- Patent number 11,322,579
- Issue date May 3, 2022
- Samsung Electronics Co., Ltd.
- Song Yi Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change material switch and method of fabricating same
- Patent number 11,316,105
- Issue date Apr 26, 2022
- International Business Machines Corporation
- Tian Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional nonvolatile memory device having resistance chang...
- Patent number 11,309,354
- Issue date Apr 19, 2022
- SK hynix Inc.
- Jae Hyun Han
- G11 - INFORMATION STORAGE
Information Patent Grant
Electron beam probing techniques and related structures
- Patent number 11,302,589
- Issue date Apr 12, 2022
- Micron Technology, Inc.
- Amitava Majumdar
- G11 - INFORMATION STORAGE
Information Patent Grant
Arrays of memory cells and methods of forming an array of verticall...
- Patent number 11,276,733
- Issue date Mar 15, 2022
- Micron Technology, Inc.
- Zengtao T. Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Access line formation for a memory array
- Patent number 11,276,731
- Issue date Mar 15, 2022
- Micron Technology, Inc.
- Andrea Redaelli
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY AND STORAGE ON A SINGLE CHIP
- Publication number 20240130143
- Publication date Apr 18, 2024
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Boron Surface Passivation of Phase Change Memory Material
- Publication number 20240099166
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY SWITCH FOR MULTI-BAND FILTER APPLICATIONS AND METHO...
- Publication number 20230422643
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE...
- Publication number 20230403956
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin I WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY WITH MULTI-LEVEL PROGRAMMING
- Publication number 20230301207
- Publication date Sep 21, 2023
- International Business Machines Corporation
- Ching-Tzu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE NON-VOLATILE MEMORY
- Publication number 20230284460
- Publication date Sep 7, 2023
- KIOXIA Corporation
- Tomoki CHIBA
- G11 - INFORMATION STORAGE
Information Patent Application
CONFINED PHASE-CHANGE MEMORY CELL WITH SELF-ALIGNED ELECTRODE AND R...
- Publication number 20230263080
- Publication date Aug 17, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU FORMATION OF A SPACER LAYER FOR PROTECTING SIDEWALLS OF A P...
- Publication number 20230263079
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Tsung-Hsueh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230240086
- Publication date Jul 27, 2023
- SK HYNIX INC.
- Si Jung YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PCM CELL WITH NANOHEATER SURROUNDED WITH AIRGAPS
- Publication number 20230189672
- Publication date Jun 15, 2023
- International Business Machines Corporation
- JUNTAO LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHALCOGENIDE MATERIAL AND SEMICONDUCTOR MEMORY DEVICE INCLUDING CHA...
- Publication number 20230119460
- Publication date Apr 20, 2023
- SK HYNIX INC.
- Jun Young LIM
- G11 - INFORMATION STORAGE
Information Patent Application
CHALCOGENIDE-BASED MATERIAL, AND SWITCHING DEVICE AND MEMORY DEVICE...
- Publication number 20230091136
- Publication date Mar 23, 2023
- Samsung Electronics Co., Ltd.
- Kiyeon YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME
- Publication number 20230088249
- Publication date Mar 23, 2023
- Samsung Electronics Co., Ltd.
- Wooyoung YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230092237
- Publication date Mar 23, 2023
- KIOXIA Corporation
- Masanori MIZUKOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING CHANNEL LAYER INCLUDING VARIABLE RESIST...
- Publication number 20230082400
- Publication date Mar 16, 2023
- SK HYNIX INC.
- Won Tae KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNAPTIC DEVICE, RESERVOIR COMPUTING DEVICE INCLUDING THE SYNAPTIC...
- Publication number 20230030949
- Publication date Feb 2, 2023
- Korea Advanced Institute of Science and Technology
- Heejun YANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
- Publication number 20230012513
- Publication date Jan 19, 2023
- Samsung Electronics Co.,Ltd.
- Jiyeon Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECONFIGURABLE MEMTRANSISTORS, FABRICATING METHODS AND APPLICATIONS...
- Publication number 20230004803
- Publication date Jan 5, 2023
- Northwestern University
- Mark C. Hersam
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE MEMORY DEVICE
- Publication number 20220406844
- Publication date Dec 22, 2022
- Samsung Electronics Co., Ltd.
- Chungman KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL WITH AN AIRGAP TO ALLOW FOR THE EXPANSION...
- Publication number 20220399493
- Publication date Dec 15, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20220376175
- Publication date Nov 24, 2022
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Huei-Tsz WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH MEMORY STRINGS USING VARIABLE RESISTANCE MEMORY...
- Publication number 20220367568
- Publication date Nov 17, 2022
- KIOXIA Corporation
- Ryu OGIWARA
- G11 - INFORMATION STORAGE
Information Patent Application
COMPOSITION FOR MEMORY CELL CONTAINING CHALCOGEN COMPOUND, STRUCTUR...
- Publication number 20220367808
- Publication date Nov 17, 2022
- Jun-sung KIM
- G11 - INFORMATION STORAGE
Information Patent Application
Laser-Written Submicron Pixels with Tunable Circular Polarization a...
- Publication number 20220367798
- Publication date Nov 17, 2022
- The Government of the United States of America, as represented by the Secreta...
- Zachariah B. Hennighausen
- B82 - NANO-TECHNOLOGY
Information Patent Application
Stack of Horizontally Extending and Vertically Overlapping Features...
- Publication number 20220302015
- Publication date Sep 22, 2022
- Micron Technology, Inc.
- Sanh D. Tang
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE CHANGE DEVICE AND STORAGE DEVICE
- Publication number 20220302385
- Publication date Sep 22, 2022
- KIOXIA Corporation
- Takao KOSAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE DEVICE AND STORAGE UNIT
- Publication number 20220293855
- Publication date Sep 15, 2022
- Sony Semiconductor Solutions Corporation
- Tetsuya MIZUGUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20220285611
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Feng Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL STACKED PHASE CHANGE MEMORY AND PREPARATION METHO...
- Publication number 20220271089
- Publication date Aug 25, 2022
- HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Hao TONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES WITH SELECTOR LAYER AND METHODS OF FORMING THE SAME
- Publication number 20220262861
- Publication date Aug 18, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electronic synaptic device and method for manufacturing same

Semiconductor device and method of forming the same

Non-volatile memory structure with positioned doping

Memory device with double protective liner

Resistive random access memory device

Resistance variable device with chalcogen-containing layer

Semiconductor memory device including phase change material layers...

Tapered memory cell profiles

Semiconductor memory device including variable resistance layer

Storage device and storage unit with a chalcogen element

Semiconductor memory device

Method of fabricating a variable resistance memory device

Semiconductor memory device with resistance change memory element a...

Material implication operations in memory

Switch device, storage apparatus, and memory system incorporating b...

Resistive random access memory device

Tapered cell profile and fabrication

Variable resistance memory devices implementing two-dimensional tra...

Stack of horizontally extending and vertically overlapping features...

Carbon-based volatile and non-volatile memristors

Memory cells having resistors and formation of the same

Memory material, and memory device applying the same

Memory devices with selector layer and methods of forming the same

Semiconductor logic circuits including a non-volatile memory cell

Metal-insulator-metal (MIM) capacitor and semiconductor device

Phase change material switch and method of fabricating same

Three-dimensional nonvolatile memory device having resistance chang...

Electron beam probing techniques and related structures

Arrays of memory cells and methods of forming an array of verticall...

Access line formation for a memory array

Patents Applicationslast 30 patents

MEMORY AND STORAGE ON A SINGLE CHIP

Boron Surface Passivation of Phase Change Memory Material

RADIO FREQUENCY SWITCH FOR MULTI-BAND FILTER APPLICATIONS AND METHO...

PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE...

PHASE CHANGE MEMORY WITH MULTI-LEVEL PROGRAMMING

VARIABLE RESISTANCE NON-VOLATILE MEMORY

CONFINED PHASE-CHANGE MEMORY CELL WITH SELF-ALIGNED ELECTRODE AND R...

IN-SITU FORMATION OF A SPACER LAYER FOR PROTECTING SIDEWALLS OF A P...

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

PCM CELL WITH NANOHEATER SURROUNDED WITH AIRGAPS

CHALCOGENIDE MATERIAL AND SEMICONDUCTOR MEMORY DEVICE INCLUDING CHA...

CHALCOGENIDE-BASED MATERIAL, AND SWITCHING DEVICE AND MEMORY DEVICE...

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

ELECTRONIC DEVICE INCLUDING CHANNEL LAYER INCLUDING VARIABLE RESIST...

SYNAPTIC DEVICE, RESERVOIR COMPUTING DEVICE INCLUDING THE SYNAPTIC...

MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME

RECONFIGURABLE MEMTRANSISTORS, FABRICATING METHODS AND APPLICATIONS...

RESISTIVE MEMORY DEVICE

PHASE CHANGE MEMORY CELL WITH AN AIRGAP TO ALLOW FOR THE EXPANSION...

NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE

MEMORY DEVICE WITH MEMORY STRINGS USING VARIABLE RESISTANCE MEMORY...

COMPOSITION FOR MEMORY CELL CONTAINING CHALCOGEN COMPOUND, STRUCTUR...

Laser-Written Submicron Pixels with Tunable Circular Polarization a...

Stack of Horizontally Extending and Vertically Overlapping Features...

RESISTANCE CHANGE DEVICE AND STORAGE DEVICE

STORAGE DEVICE AND STORAGE UNIT

MEMORY DEVICES AND METHODS OF FORMING THE SAME

THREE-DIMENSIONAL STACKED PHASE CHANGE MEMORY AND PREPARATION METHO...

MEMORY DEVICES WITH SELECTOR LAYER AND METHODS OF FORMING THE SAME