Shaped junction formation

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Y10S438/965

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S438/00Semiconductor device manufacturing: process

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Y10S438/965Shaped junction formation

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Patents Grantslast 30 patents

Information Patent Grant
Passivation structure with voltage equalizing loops
- Patent number 8,076,672
- Issue date Dec 13, 2011
- International Rectifier Corporation
- Niraj Ranjan
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Large area semiconductor detector with internal gain
- Patent number 7,268,339
- Issue date Sep 11, 2007
- Radiation Monitoring Devices, Inc.
- Richard Farrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor system having a pn transition and method for manufact...
- Patent number 7,199,031
- Issue date Apr 3, 2007
- Robert Bosch GmbH
- Maria Del Rocio Martin Lopez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation structure with voltage equalizing loops
- Patent number 7,183,626
- Issue date Feb 27, 2007
- International Rectifier Corporation
- Niraj Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-voltage punch-through bi-directional transient-voltage suppress...
- Patent number 6,858,510
- Issue date Feb 22, 2005
- General Semiconductor, Inc.
- Willem G. Einthoven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-voltage punch-through bi-directional transient-voltage suppress...
- Patent number 6,600,204
- Issue date Jul 29, 2003
- General Semiconductor, Inc.
- Willem G. Einthoven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a thermoelectric semiconductor material or...
- Patent number 6,319,744
- Issue date Nov 20, 2001
- Komatsu Ltd.
- Lee Yong Hoon
- G01 - MEASURING TESTING
Information Patent Grant
Programmable triangular shaped device having variable gain
- Patent number 6,312,980
- Issue date Nov 6, 2001
- LSI Logic Corporation
- Michael D. Rostoker
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Methods of fabricating silicon carbide power devices by controlled...
- Patent number 6,303,475
- Issue date Oct 16, 2001
- Cree, Inc.
- Alexander Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor for antistatic circuit and method for fabricat...
- Patent number 6,207,997
- Issue date Mar 27, 2001
- Hyundai Electronics Industries Co. Ltd.
- Jae Goan Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating silicon carbide power devices by controlled...
- Patent number 6,100,169
- Issue date Aug 8, 2000
- Cree, Inc.
- Alexander Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating diode with improved reverse energy character...
- Patent number 5,930,660
- Issue date Jul 27, 1999
- General Semiconductor, Inc.
- Harold Davis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oblique implantation in forming base of bipolar transistor
- Patent number 5,899,723
- Issue date May 4, 1999
- National Semiconductor Corporation
- Hung-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing insulated gate semiconductor device to impr...
- Patent number 5,897,355
- Issue date Apr 27, 1999
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having solid phase diffusion sources
- Patent number 5,898,203
- Issue date Apr 27, 1999
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device by selectively controlling growth of an epitax...
- Patent number 5,854,089
- Issue date Dec 29, 1998
- Sharp Kabushiki Kaisha
- Hiroshi Nakatsu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming a semiconductor device with a graded lightly-dop...
- Patent number 5,811,342
- Issue date Sep 22, 1998
- Texas Instruments - Acer Incorporated
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor for antistatic circuit and method for fabricat...
- Patent number 5,807,728
- Issue date Sep 15, 1998
- Hyundai Electronics Industries, Co., Ltd.
- Jae Goan Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,766,965
- Issue date Jun 16, 1998
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate semiconductor device typically having subsurface-pea...
- Patent number 5,701,023
- Issue date Dec 23, 1997
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of oblique implantation in forming base of bipolar transistor
- Patent number 5,605,849
- Issue date Feb 25, 1997
- National Semiconductor Corporation
- Hung-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufactured by selectively controlling growth...
- Patent number 5,581,116
- Issue date Dec 3, 1996
- Sharp Kabushiki Kaisha
- Hiroshi Nakatsu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of making an isolation layer stack semiconductor device
- Patent number 5,578,510
- Issue date Nov 26, 1996
- Nippon Steel Corporation
- Tomofune Tani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufactuirng MOSFET having relatively shallow junction...
- Patent number 5,457,060
- Issue date Oct 10, 1995
- Winbond Electronics Corporation
- Wen-Yueh Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,434,440
- Issue date Jul 18, 1995
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structural configuration for MOSFET integrated circuit...
- Patent number 5,428,240
- Issue date Jun 27, 1995
- United Microelectronics Corp.
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction contact process and structure for semiconductor technologies
- Patent number 5,420,056
- Issue date May 30, 1995
- Texas Instruments Incorporated
- Mehrdad M. Moslehi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device having a shallow dope...
- Patent number 5,407,847
- Issue date Apr 18, 1995
- Motorola Inc.
- James D. Hayden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device having a short gate length
- Patent number 5,384,273
- Issue date Jan 24, 1995
- Motorola Inc.
- Robert B. Davies
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing the bipolar transistor
- Patent number 5,328,858
- Issue date Jul 12, 1994
- Sharp Kabushiki Kaisha
- Satoshi Hikida
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Passivation structure with voltage equalizing loops
- Publication number 20070120224
- Publication date May 31, 2007
- International Rectifier Corporation
- Niraj Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Passivation structure with voltage equalizing loops
- Publication number 20060102984
- Publication date May 18, 2006
- International Rectifier Corporation
- Niraj Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor arrangement comprising a pn-transition and method for...
- Publication number 20050121690
- Publication date Jun 9, 2005
- Maria Del Rocio Martin Lopez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low- voltage punch-through bi-directional transient-voltage suppres...
- Publication number 20030205775
- Publication date Nov 6, 2003
- Willem G. Einthoven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-voltage punch-through bi-directional transient-voltage suppress...
- Publication number 20030010995
- Publication date Jan 16, 2003
- Willem G. Einthoven
- H01 - BASIC ELECTRIC ELEMENTS

Shaped junction formation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Passivation structure with voltage equalizing loops

Large area semiconductor detector with internal gain

Semiconductor system having a pn transition and method for manufact...

Passivation structure with voltage equalizing loops

Low-voltage punch-through bi-directional transient-voltage suppress...

Low-voltage punch-through bi-directional transient-voltage suppress...

Method for manufacturing a thermoelectric semiconductor material or...

Programmable triangular shaped device having variable gain

Methods of fabricating silicon carbide power devices by controlled...

Thin film transistor for antistatic circuit and method for fabricat...

Methods of fabricating silicon carbide power devices by controlled...

Method for fabricating diode with improved reverse energy character...

Oblique implantation in forming base of bipolar transistor

Method of manufacturing insulated gate semiconductor device to impr...

Semiconductor device having solid phase diffusion sources

Semiconductor device by selectively controlling growth of an epitax...

Method for forming a semiconductor device with a graded lightly-dop...

Thin film transistor for antistatic circuit and method for fabricat...

Semiconductor device and method of manufacturing the same

Insulated gate semiconductor device typically having subsurface-pea...

Use of oblique implantation in forming base of bipolar transistor

Semiconductor device manufactured by selectively controlling growth...

Method of making an isolation layer stack semiconductor device

Process for manufactuirng MOSFET having relatively shallow junction...

Semiconductor device and method of manufacturing the same

Source/drain structural configuration for MOSFET integrated circuit...

Junction contact process and structure for semiconductor technologies

Method for fabricating a semiconductor device having a shallow dope...

Method of making a semiconductor device having a short gate length

Method for producing the bipolar transistor

Patents Applicationslast 30 patents

Passivation structure with voltage equalizing loops

Passivation structure with voltage equalizing loops

Semiconductor arrangement comprising a pn-transition and method for...

Low- voltage punch-through bi-directional transient-voltage suppres...

Low-voltage punch-through bi-directional transient-voltage suppress...