Silicides

Industry

CPC
Y10S148/147

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/147Silicides

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating semiconductor device with polycide structure...
- Patent number 6,074,925
- Issue date Jun 13, 2000
- NEC Corporation
- Fumiki Aisou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor devices with self-aligned silicide
- Patent number 6,025,241
- Issue date Feb 15, 2000
- United Microelectronics Corp.
- Tony Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elevated source/drain salicide CMOS technology
- Patent number 5,994,191
- Issue date Nov 30, 1999
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon semiconductor substrate and method of fabricating the same
- Patent number 5,894,037
- Issue date Apr 13, 1999
- NEC Corporation
- Hiroaki Kikuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with a metal silicide film uniformly formed
- Patent number 5,834,368
- Issue date Nov 10, 1998
- NEC Corporation
- Hiroshi Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for reducing halogen concentration in a material layer duri...
- Patent number 5,830,802
- Issue date Nov 3, 1998
- Motorola Inc.
- Hsing-Huang Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming transistor electrodes from directionally deposite...
- Patent number 5,814,537
- Issue date Sep 29, 1998
- Sharp Microelectronics Technology,Inc.
- Jer-shen Maa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised source/drain with silicided contacts for semiconductor devices
- Patent number 5,760,451
- Issue date Jun 2, 1998
- International Business Machines Corporation
- Anthony J. Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of CMOS transistor
- Patent number 5,756,382
- Issue date May 26, 1998
- Matsushita Electric Industrial Co., Ltd.
- Mizuki Segawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned cobalt silicide on MOS integrated circuits
- Patent number 5,736,461
- Issue date Apr 7, 1998
- Digital Equipment Corporation
- Antonio Carlo Berti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of CMOS transistor
- Patent number 5,726,071
- Issue date Mar 10, 1998
- Matsushita Electric Industrial Co., Ltd.
- Mizuki Segawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,721,175
- Issue date Feb 24, 1998
- Kabushiki Kaisha Toshiba
- Iwao Kunishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of CMOS transistor
- Patent number 5,686,340
- Issue date Nov 11, 1997
- Matsushita Electric Industrial Co., Ltd.
- Mizuki Segawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of CMOS transistor with no reduction of punch-...
- Patent number 5,618,748
- Issue date Apr 8, 1997
- Matsushita Electric Industrial Co., Ltd.
- Mizuki Segawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator device interconnects
- Patent number 5,587,597
- Issue date Dec 24, 1996
- The United States of America as represented by the Secretary of the Navy
- Ronald E. Reedy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded wafer processing with metal silicidation
- Patent number 5,569,620
- Issue date Oct 29, 1996
- Harris Corporation
- Jack H. Linn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned cobalt silicide on MOS integrated circuits
- Patent number 5,567,651
- Issue date Oct 22, 1996
- Digital Equipment Corporation
- Antonio C. Berti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming titanium silicide local interconnect
- Patent number 5,543,361
- Issue date Aug 6, 1996
- AT&T Global Information Solutions Company
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing offset polysilicon thin-film transistor
- Patent number 5,543,340
- Issue date Aug 6, 1996
- Samsung Electronics Co., Ltd.
- Joo-hyung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor integrated circuit device
- Patent number 5,512,502
- Issue date Apr 30, 1996
- Hitachi, Ltd.
- Fumio Ootsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for lowering the phase transformation temperature of a metal...
- Patent number 5,510,295
- Issue date Apr 23, 1996
- International Business Machines Corporation
- Cyril Cabral
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of CMOS transistor including heat treatments o...
- Patent number 5,447,872
- Issue date Sep 5, 1995
- Matsushita Electric Industrial Co., Ltd.
- Mizuki Segawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming titanium silicide local interconnect
- Patent number 5,443,996
- Issue date Aug 22, 1995
- AT&T Global Information Solutions Company
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to prevent silicide bubble in the VLSI process
- Patent number 5,434,096
- Issue date Jul 18, 1995
- Taiwan Semiconductor Manufacturing Company LTD.
- Cheng-Te Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of fabricating complementary inverter circuit having multi-...
- Patent number 5,418,179
- Issue date May 23, 1995
- Yamaha Corporation
- Tadahiko Hotta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of making silicided contacts for semiconductor devices
- Patent number 5,409,853
- Issue date Apr 25, 1995
- International Business Machines Corporation
- Anthony J. Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of CMOS transistor in which heat treatment at...
- Patent number 5,409,847
- Issue date Apr 25, 1995
- Matsushita Electric Industrial Co., Ltd.
- Mizuki Segawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a metal silicide interconnect in an integrated c...
- Patent number 5,405,806
- Issue date Apr 11, 1995
- Motorola Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor devices having electrodes compr...
- Patent number 5,395,799
- Issue date Mar 7, 1995
- AT&T Corp.
- Chen-Hua D. Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Refractory metal silicide deposition process
- Patent number 5,395,798
- Issue date Mar 7, 1995
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for fabricating semiconductor device with polycide structure...

Method of fabricating semiconductor devices with self-aligned silicide

Elevated source/drain salicide CMOS technology

Silicon semiconductor substrate and method of fabricating the same

Integrated circuit with a metal silicide film uniformly formed

Process for reducing halogen concentration in a material layer duri...

Method of forming transistor electrodes from directionally deposite...

Raised source/drain with silicided contacts for semiconductor devices

Manufacturing method of CMOS transistor

Self-aligned cobalt silicide on MOS integrated circuits

Manufacturing method of CMOS transistor

Method of manufacturing a semiconductor device

Manufacturing method of CMOS transistor

Manufacturing method of CMOS transistor with no reduction of punch-...

Semiconductor-on-insulator device interconnects

Bonded wafer processing with metal silicidation

Self-aligned cobalt silicide on MOS integrated circuits

Process for forming titanium silicide local interconnect

Method for manufacturing offset polysilicon thin-film transistor

Manufacturing method for semiconductor integrated circuit device

Method for lowering the phase transformation temperature of a metal...

Manufacturing method of CMOS transistor including heat treatments o...

Process for forming titanium silicide local interconnect

Method to prevent silicide bubble in the VLSI process

Process of fabricating complementary inverter circuit having multi-...

Process of making silicided contacts for semiconductor devices

Manufacturing method of CMOS transistor in which heat treatment at...

Method for forming a metal silicide interconnect in an integrated c...

Method of fabricating semiconductor devices having electrodes compr...

Refractory metal silicide deposition process