Static induction transistors [SIT]

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H01L29/66454

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/66454Static induction transistors [SIT]

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Patents Grantslast 30 patents

Information Patent Grant
Surface oxidation control of metal gates using capping layer
- Patent number 12,046,475
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pei-Yu Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a repaired dielectric layer
- Patent number 11,088,265
- Issue date Aug 10, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor on oxide semiconductor substrate
- Patent number 9,112,048
- Issue date Aug 18, 2015
- RAMGOSS INC.
- Bunmi T. Adekore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based permeable base transistor and method of fabrication
- Patent number 8,247,843
- Issue date Aug 21, 2012
- BAE Systems Information and Electronic Systems Integration Inc.
- Liberty L Gunter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for interconnect metallization using a stop-etc...
- Patent number 8,110,880
- Issue date Feb 7, 2012
- Northrop Grumman Systems Corporation
- John V. Veliadis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and method of producing the same
- Patent number 7,923,283
- Issue date Apr 12, 2011
- Fujitsu Limited
- Yuji Awano
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Systems and methods for interconnect metallization using a stop-etc...
- Patent number 7,557,046
- Issue date Jul 7, 2009
- Northrop Grumman Systems Corporation
- John V. Veliadis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating nitride-based transistors having regrown ohm...
- Patent number 7,432,142
- Issue date Oct 7, 2008
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based permeable base transistor and method of fabrication
- Patent number 7,413,958
- Issue date Aug 19, 2008
- BAE Systems Information and Electronic Systems Integration Inc.
- Liberty L Gunter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and method of producing the same
- Patent number 7,332,810
- Issue date Feb 19, 2008
- Fujitsu Limited
- Yuji Awano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and method of producing the same
- Patent number 7,084,507
- Issue date Aug 1, 2006
- Fujitsu Limited
- Yuji Awano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor and diode
- Patent number 6,097,046
- Issue date Aug 1, 2000
- Texas Instruments Incorporated
- Donald L. Plumton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low capacitance power VFET method and device
- Patent number 5,910,665
- Issue date Jun 8, 1999
- Texas Instruments Incorporated
- Donald Lynn Plumton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making n-channel or p-channel permeable base transistor...
- Patent number 5,814,548
- Issue date Sep 29, 1998
- Forschungszentrum Julich GmbH
- Jurgen Graber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial overgrowth method and devices
- Patent number 5,747,842
- Issue date May 5, 1998
- Texas Instruments Incorporated
- Donald L. Plumton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial overgrowth method
- Patent number 5,712,189
- Issue date Jan 27, 1998
- Texas Instruments Incorporated
- Donald Lynn Plumton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating buried control elements in semiconductor devices
- Patent number 5,700,703
- Issue date Dec 23, 1997
- Motorola
- Jenn-Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar semiconductor device and its manufacturing m...
- Patent number 5,682,046
- Issue date Oct 28, 1997
- Fujitsu Limited
- Tsuyoshi Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a vertical FET using epitaxial overgrowth
- Patent number 5,610,085
- Issue date Mar 11, 1997
- Texas Instruments Incorporated
- Han-Tzong Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial overgrowth method
- Patent number 5,554,561
- Issue date Sep 10, 1996
- Texas Instruments Incorporated
- Donald L. Plumton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Permeable base transistor having laminated layers
- Patent number 5,541,424
- Issue date Jul 30, 1996
- Forschungszentrum Julich GmbH
- Jurgen Graber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a highspeed static induction transi...
- Patent number 5,532,511
- Issue date Jul 2, 1996
- Research Development Corp. of Japan
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making power VFET device
- Patent number 5,468,661
- Issue date Nov 21, 1995
- Texas Instruments Incorporated
- Han-Tzong Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using whiskers
- Patent number 5,362,972
- Issue date Nov 8, 1994
- Hitachi, Ltd.
- Masamitsu Yazawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating power VFET gate-refill
- Patent number 5,342,795
- Issue date Aug 30, 1994
- Texas Instruments Incorporated
- Han-Tzong Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a static induction field-effect transistor
- Patent number 5,296,403
- Issue date Mar 22, 1994
- Research Development Corp. of Japan
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Permeable base transistor having selectively grown emitter
- Patent number 5,274,266
- Issue date Dec 28, 1993
- Siemens Aktiengesellschaft
- Helmut Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a power VFET device using a p+ carbon doped gate l...
- Patent number 5,231,037
- Issue date Jul 27, 1993
- Texas Instruments Incorporated
- Han-Tzong Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Permeable base transistor having an electrode configuration for hea...
- Patent number 5,155,561
- Issue date Oct 13, 1992
- Massachusetts Institute of Technology
- Carl O. Bozler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor device fabricated with semiconductor regrowth
- Patent number 5,106,778
- Issue date Apr 21, 1992
- Massachusetts Institute of Technology
- Mark A. Hollis
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SURFACE OXIDATION CONTROL OF METAL GATES USING CAPPING LAYER
- Publication number 20240387179
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei-Yu Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH BACKSIDE INTERCONNECTION AND METHOD FOR F...
- Publication number 20240154015
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jui-Lin CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR ON OXIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20130043468
- Publication date Feb 21, 2013
- RAMGOSS, INC.
- Bunmi T. ADEKORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR GROWING NITRIDE SEMICON...
- Publication number 20120064653
- Publication date Mar 15, 2012
- Rohm Co., Ltd.
- Ken Nakahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Semiconductor Device and Method for Growing Nitride Semicon...
- Publication number 20080308836
- Publication date Dec 18, 2008
- Rohm Co., Ltd.
- Ken Nakahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-BASED PERMEABLE BASE TRANSISTOR AND METHOD OF FABRICATION
- Publication number 20080265259
- Publication date Oct 30, 2008
- BAE Systems Information and Electronic Systems Integration, Inc.
- Liberty L. Gunter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND METHOD OF PRODUCING THE SAME
- Publication number 20080111164
- Publication date May 15, 2008
- FUJITSU LIMITED
- Yuji Awano
- B82 - NANO-TECHNOLOGY
Information Patent Application
Integrated circuit device and method of producing the same
- Publication number 20060226551
- Publication date Oct 12, 2006
- FUJITSU LIMITED
- Yuji Awano
- B82 - NANO-TECHNOLOGY
Information Patent Application
Gan-based permeable base transistor and method of fabrication
- Publication number 20060148156
- Publication date Jul 6, 2006
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Liberty L Gunter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of fabricating nitride-based transistors having regrown ohm...
- Publication number 20050258451
- Publication date Nov 24, 2005
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit device and method of producing the same
- Publication number 20020163079
- Publication date Nov 7, 2002
- FUJITSU LIMITED
- Yuji Awano
- B82 - NANO-TECHNOLOGY

Static induction transistors [SIT]

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Surface oxidation control of metal gates using capping layer

Semiconductor structure having a repaired dielectric layer

Vertical field effect transistor on oxide semiconductor substrate

GaN-based permeable base transistor and method of fabrication

Systems and methods for interconnect metallization using a stop-etc...

Integrated circuit device and method of producing the same

Systems and methods for interconnect metallization using a stop-etc...

Methods of fabricating nitride-based transistors having regrown ohm...

GaN-based permeable base transistor and method of fabrication

Integrated circuit device and method of producing the same

Integrated circuit device and method of producing the same

Vertical field effect transistor and diode

Low capacitance power VFET method and device

Process for making n-channel or p-channel permeable base transistor...

Epitaxial overgrowth method and devices

Epitaxial overgrowth method

Method of fabricating buried control elements in semiconductor devices

Heterojunction bipolar semiconductor device and its manufacturing m...

Method of making a vertical FET using epitaxial overgrowth

Epitaxial overgrowth method

Permeable base transistor having laminated layers

Semiconductor device comprising a highspeed static induction transi...

Method of making power VFET device

Semiconductor device using whiskers

Method of fabricating power VFET gate-refill

Method of manufacturing a static induction field-effect transistor

Permeable base transistor having selectively grown emitter

Method of making a power VFET device using a p+ carbon doped gate l...

Permeable base transistor having an electrode configuration for hea...

Vertical transistor device fabricated with semiconductor regrowth

Patents Applicationslast 30 patents

SURFACE OXIDATION CONTROL OF METAL GATES USING CAPPING LAYER

SEMICONDUCTOR DEVICE WITH BACKSIDE INTERCONNECTION AND METHOD FOR F...

VERTICAL FIELD EFFECT TRANSISTOR ON OXIDE SEMICONDUCTOR SUBSTRATE

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR GROWING NITRIDE SEMICON...

Nitride Semiconductor Device and Method for Growing Nitride Semicon...

GaN-BASED PERMEABLE BASE TRANSISTOR AND METHOD OF FABRICATION

INTEGRATED CIRCUIT DEVICE AND METHOD OF PRODUCING THE SAME

Integrated circuit device and method of producing the same

Gan-based permeable base transistor and method of fabrication

Methods of fabricating nitride-based transistors having regrown ohm...

Integrated circuit device and method of producing the same