Structure including a tunneling barrier layer, the memory effect implying the modification of tunnel barrier conductivity

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G11C2213/54

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GPHYSICS G11Information storage G11CSTATIC STORES G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group

Current Industry

G11C2213/54Structure including a tunneling barrier layer, the memory effect implying the modification of tunnel barrier conductivity

Industries

Patents Grantslast 30 patents

Information Patent Grant
Phase-change memory device having reversed phase-change characteris...
- Patent number 11,812,661
- Issue date Nov 7, 2023
- Samsung Electronics Co., Ltd.
- Yun Heub Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Phase-change memory device having reversed phase-change characteris...
- Patent number 11,195,996
- Issue date Dec 7, 2021
- Samsung Electronics Co., Ltd.
- Yun Heub Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,063,214
- Issue date Jul 13, 2021
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multilayer selector device with low leakage current
- Patent number 10,825,861
- Issue date Nov 3, 2020
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 10,680,171
- Issue date Jun 9, 2020
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Storage device, information processing apparatus, and storage devic...
- Patent number 10,586,578
- Issue date Mar 10, 2020
- Sony Corporation
- Tetsuhiro Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory device and cross-point array apparatus includi...
- Patent number 10,475,801
- Issue date Nov 12, 2019
- SK hynix Inc.
- Sanghun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Read circuit for a variable resistance memory device
- Patent number 10,446,227
- Issue date Oct 15, 2019
- TOSHIBA MEMORY CORPORATION
- Kensuke Ota
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device to reduce energy consumed to write data
- Patent number 10,373,677
- Issue date Aug 6, 2019
- Sony Corporation
- Kimiyoshi Usami
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance element and memory device
- Patent number 10,312,440
- Issue date Jun 4, 2019
- Toshiba Mitsubishi Corporation
- Hiromichi Kuriyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 10,224,480
- Issue date Mar 5, 2019
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory element
- Patent number 10,050,156
- Issue date Aug 14, 2018
- Opto Tech Corporation
- Yen-Kai Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile resistive memory cell comprising metal electrodes and...
- Patent number 10,002,664
- Issue date Jun 19, 2018
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Elisa Vianello
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction memory devices including crystallized boro...
- Patent number 9,842,987
- Issue date Dec 12, 2017
- Samsung Electronics Co., Ltd.
- SeChung Oh
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 9,831,425
- Issue date Nov 28, 2017
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device embedding tunnel insulating l...
- Patent number 9,799,706
- Issue date Oct 24, 2017
- Seoul National University R&DB Foundation
- Byung-Gook Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device
- Patent number 9,721,654
- Issue date Aug 1, 2017
- Kabushiki Kaisha Toshiba
- Ryuji Ohba
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having a tunnel barrier layer in a memory cell, and e...
- Patent number 9,455,401
- Issue date Sep 27, 2016
- SK Hynix Inc.
- Wan-Gee Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Select devices for memory cell applications
- Patent number 9,349,445
- Issue date May 24, 2016
- Micron Technology, Inc.
- David H. Wells
- G11 - INFORMATION STORAGE
Information Patent Grant
Read distribution management for phase change memory
- Patent number 9,196,359
- Issue date Nov 24, 2015
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal memory with intrinsic rectifying characteristic
- Patent number 9,196,831
- Issue date Nov 24, 2015
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 9,159,913
- Issue date Oct 13, 2015
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable metallization cell with two dielectric layers
- Patent number 9,117,515
- Issue date Aug 25, 2015
- Macronix International Co., Ltd.
- Feng-Ming Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells having ferroelectric materials
- Patent number 9,053,801
- Issue date Jun 9, 2015
- Micron Technology, Inc.
- Gurtej S. Sandhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile storage system using opposite polarity programming sig...
- Patent number 9,047,949
- Issue date Jun 2, 2015
- Sandisk 3D LLC
- Jingyan Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and method of controlling semiconductor device
- Patent number 8,787,067
- Issue date Jul 22, 2014
- Renesas Electronics Corporation
- Motofumi Saitoh
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanoscale electronic device with barrier layers
- Patent number 8,766,231
- Issue date Jul 1, 2014
- Hewlett-Packard Development Company, L.P.
- Wei Yi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multilayer dielectric memory device
- Patent number 8,729,704
- Issue date May 20, 2014
- Intel Corporation
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile storage system using opposite polarity programming sig...
- Patent number 8,699,259
- Issue date Apr 15, 2014
- Sandisk 3D LLC
- Jingyan Zhang
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
PHASE-CHANGE MEMORY DEVICE HAVING REVERSED PHASE-CHANGE CHARACTERIS...
- Publication number 20220029094
- Publication date Jan 27, 2022
- Samsung Electronics Co., Ltd.
- Yun Heub Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20210193917
- Publication date Jun 24, 2021
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20200259079
- Publication date Aug 13, 2020
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PHASE-CHANGE MEMORY DEVICE HAVING REVERSED PHASE-CHANGE CHARACTERIS...
- Publication number 20200168792
- Publication date May 28, 2020
- Industry-University Cooperation Foundation Hanyang University
- Yun Heub SONG
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20190173006
- Publication date Jun 6, 2019
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STORAGE DEVICE, INFORMATION PROCESSING APPARATUS, AND STORAGE DEVIC...
- Publication number 20190051338
- Publication date Feb 14, 2019
- SONY CORPORATION
- Tetsuhiro SUZUKI
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND CROSS-POINT ARRAY APPARATUS INCLUDI...
- Publication number 20180269216
- Publication date Sep 20, 2018
- SK HYNIX INC.
- Sanghun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20180197600
- Publication date Jul 12, 2018
- SONY CORPORATION
- Kimiyoshi USAMI
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20180130946
- Publication date May 10, 2018
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LOW LEAKAGE RESISTIVE RANDOM ACCESS MEMORY CELLS AND PROCESSES FOR...
- Publication number 20170179382
- Publication date Jun 22, 2017
- Microsemi SoC Corporation
- John L. McCollum
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL MEMORY WITH INTRINSIC RECTIFYING CHARACTERISTIC
- Publication number 20140269002
- Publication date Sep 18, 2014
- Crossbar, Inc.
- Sung Hyun JO
- G11 - INFORMATION STORAGE
Information Patent Application
Non-Volatile Storage System Using Opposite Polarity Programming Sig...
- Publication number 20140198558
- Publication date Jul 17, 2014
- SanDisk 3D LLC
- Jingyan Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MEMORY CELLS HAVING FERROELECTRIC MATERIALS
- Publication number 20140153312
- Publication date Jun 5, 2014
- Micron Technology, Inc.
- Gurtej S. Sandhu
- G11 - INFORMATION STORAGE
Information Patent Application
MULTILAYER DIELECTRIC MEMORY DEVICE
- Publication number 20140091429
- Publication date Apr 3, 2014
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Application
READ DISTRIBUTION MANAGEMENT FOR PHASE CHANGE MEMORY
- Publication number 20130272063
- Publication date Oct 17, 2013
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE METALLIZATION CELL WITH TWO DIELECTRIC LAYERS
- Publication number 20130182487
- Publication date Jul 18, 2013
- FENG-MING LEE
- G11 - INFORMATION STORAGE
Information Patent Application
Selector Device for Memory Applications
- Publication number 20130134382
- Publication date May 30, 2013
- Katholieke Universiteit Leuven, K.U.Leuven R&D
- Koen Martens
- G11 - INFORMATION STORAGE
Information Patent Application
SELECT DEVICES FOR MEMORY CELL APPLICATIONS
- Publication number 20130069028
- Publication date Mar 21, 2013
- Micron Technology, Inc.
- David H. Wells
- G11 - INFORMATION STORAGE
Information Patent Application
NANOSCALE ELECTRONIC DEVICE WITH BARRIER LAYERS
- Publication number 20120228575
- Publication date Sep 13, 2012
- Wei Yi
- G11 - INFORMATION STORAGE
Information Patent Application
Non-Volatile Storage System Using Opposite Polarity Programming Sig...
- Publication number 20120224413
- Publication date Sep 6, 2012
- Jingyan Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
CHANGING A MEMRISTOR STATE
- Publication number 20120195099
- Publication date Aug 2, 2012
- Feng MIAO
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING SEMICONDUCTOR DEVICE
- Publication number 20120195100
- Publication date Aug 2, 2012
- RENESAS ELECTRONICS CORPORATION
- Motofumi SAITOH
- G11 - INFORMATION STORAGE
Information Patent Application
Combined Memories In Integrated Circuits
- Publication number 20120176840
- Publication date Jul 12, 2012
- UNITY SEMICONDUCTOR CORPORATION
- Robert Norman
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MULTILAYER DIELECTRIC MEMORY DEVICE
- Publication number 20120161318
- Publication date Jun 28, 2012
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Application
READ DISTRIBUTION MANAGEMENT FOR PHASE CHANGE MEMORY
- Publication number 20120092923
- Publication date Apr 19, 2012
- Numonyx B.V.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Application
Two Terminal Re Writeable Non Volatile Ion Transport Memory Device
- Publication number 20120087174
- Publication date Apr 12, 2012
- UNITY SEMICONDUCTOR CORPORATION
- DARRELL RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTANCE CHANGE ELEMENT AND RESISTANCE CHANGE MEMORY
- Publication number 20120069625
- Publication date Mar 22, 2012
- Junichi WADA
- G11 - INFORMATION STORAGE
Information Patent Application
Combined Memories In Integrated Circuits
- Publication number 20110310658
- Publication date Dec 22, 2011
- UNITY SEMICONDUCTOR CORPORATION
- Robert Norman
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TRI LAYER METAL OXIDE REWRITABLE NON VOLATILE TWO TERMINAL MEMORY E...
- Publication number 20110278532
- Publication date Nov 17, 2011
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY HAVING TUNNEL BARRIER AND METHOD FOR WRITING AND READING INF...
- Publication number 20110051494
- Publication date Mar 3, 2011
- FORSCHUNGSZENTRUM JUELICH GMBH
- Hermann Kohlstedt
- G11 - INFORMATION STORAGE

Structure including a tunneling barrier layer, the memory effect implying the modification of tunnel barrier conductivity

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Phase-change memory device having reversed phase-change characteris...

Two-terminal reversibly switchable memory device

Phase-change memory device having reversed phase-change characteris...

Two-terminal reversibly switchable memory device

Multilayer selector device with low leakage current

Two-terminal reversibly switchable memory device

Storage device, information processing apparatus, and storage devic...

Ferroelectric memory device and cross-point array apparatus includi...

Read circuit for a variable resistance memory device

Semiconductor device to reduce energy consumed to write data

Variable resistance element and memory device

Two-terminal reversibly switchable memory device

Resistive memory element

Non-volatile resistive memory cell comprising metal electrodes and...

Magnetic tunnel junction memory devices including crystallized boro...

Two-terminal reversibly switchable memory device

Resistive random access memory device embedding tunnel insulating l...

Memory device

Memory device having a tunnel barrier layer in a memory cell, and e...

Select devices for memory cell applications

Read distribution management for phase change memory

Two-terminal memory with intrinsic rectifying characteristic

Two-terminal reversibly switchable memory device

Programmable metallization cell with two dielectric layers

Memory cells having ferroelectric materials

Non-volatile storage system using opposite polarity programming sig...

Semiconductor device and method of controlling semiconductor device

Nanoscale electronic device with barrier layers

Multilayer dielectric memory device

Non-volatile storage system using opposite polarity programming sig...

Patents Applicationslast 30 patents

PHASE-CHANGE MEMORY DEVICE HAVING REVERSED PHASE-CHANGE CHARACTERIS...

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

PHASE-CHANGE MEMORY DEVICE HAVING REVERSED PHASE-CHANGE CHARACTERIS...

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

STORAGE DEVICE, INFORMATION PROCESSING APPARATUS, AND STORAGE DEVIC...

FERROELECTRIC MEMORY DEVICE AND CROSS-POINT ARRAY APPARATUS INCLUDI...

SEMICONDUCTOR DEVICE

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

LOW LEAKAGE RESISTIVE RANDOM ACCESS MEMORY CELLS AND PROCESSES FOR...

TWO-TERMINAL MEMORY WITH INTRINSIC RECTIFYING CHARACTERISTIC

Non-Volatile Storage System Using Opposite Polarity Programming Sig...

MEMORY CELLS HAVING FERROELECTRIC MATERIALS

MULTILAYER DIELECTRIC MEMORY DEVICE

READ DISTRIBUTION MANAGEMENT FOR PHASE CHANGE MEMORY

PROGRAMMABLE METALLIZATION CELL WITH TWO DIELECTRIC LAYERS

Selector Device for Memory Applications

SELECT DEVICES FOR MEMORY CELL APPLICATIONS

NANOSCALE ELECTRONIC DEVICE WITH BARRIER LAYERS

Non-Volatile Storage System Using Opposite Polarity Programming Sig...

CHANGING A MEMRISTOR STATE

SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING SEMICONDUCTOR DEVICE

Combined Memories In Integrated Circuits

MULTILAYER DIELECTRIC MEMORY DEVICE

READ DISTRIBUTION MANAGEMENT FOR PHASE CHANGE MEMORY

Two Terminal Re Writeable Non Volatile Ion Transport Memory Device

RESISTANCE CHANGE ELEMENT AND RESISTANCE CHANGE MEMORY

Combined Memories In Integrated Circuits

TRI LAYER METAL OXIDE REWRITABLE NON VOLATILE TWO TERMINAL MEMORY E...

MEMORY HAVING TUNNEL BARRIER AND METHOD FOR WRITING AND READING INF...