Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way

Industry

CPC
G11C2213/56

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group

Current Industry

G11C2213/56Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Set-while-verify circuit and reset-while verify circuit for resisti...
- Patent number 11,646,078
- Issue date May 9, 2023
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory structure and method for low programming voltag...
- Patent number 11,430,513
- Issue date Aug 30, 2022
- International Business Machines Corporation
- Soon-Cheon Seo
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically actuated switch
- Patent number 11,283,012
- Issue date Mar 22, 2022
- Hewlett Packard Enterprise Development LP
- R. Stanley Williams
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device
- Patent number 11,145,812
- Issue date Oct 12, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Gabriel Molas
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,063,214
- Issue date Jul 13, 2021
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Two transistor, one resistor non-volatile gain cell memory and stor...
- Patent number 10,950,301
- Issue date Mar 16, 2021
- Intel Corporation
- Rafael Rios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for vitamin D enhancement in mushrooms
- Patent number 10,930,342
- Issue date Feb 23, 2021
- Oakshire Holdings, Inc.
- William F. Chalupa
- A23 - FOODS OR FOODSTUFFS THEIR TREATMENT, NOT COVERED BY OTHER CLASSES
Information Patent Grant
Conductive bridge random access memory (CBRAM) devices with low the...
- Patent number 10,868,246
- Issue date Dec 15, 2020
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive metal oxide structures in non-volatile re-writable memor...
- Patent number 10,803,935
- Issue date Oct 13, 2020
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells, memory systems, and memory programming methods
- Patent number 10,783,961
- Issue date Sep 22, 2020
- Micron Technology, Inc.
- Wataru Otsuka
- G11 - INFORMATION STORAGE
Information Patent Grant
Architectures and layouts for an array of resistive random access m...
- Patent number 10,755,779
- Issue date Aug 25, 2020
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods, apparatuses, and circuits for programming a memory device
- Patent number 10,693,066
- Issue date Jun 23, 2020
- Micron Technology, Inc.
- Andrea Redaelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 10,680,171
- Issue date Jun 9, 2020
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cell switch device
- Patent number 10,658,588
- Issue date May 19, 2020
- Sony Corporation
- Shuichiro Yasuda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing a memory device
- Patent number 10,651,376
- Issue date May 12, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Sophie Bernasconi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide based memory
- Patent number 10,622,061
- Issue date Apr 14, 2020
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and layout for resistive random-access memory arrays
- Patent number 10,553,646
- Issue date Feb 4, 2020
- MICROSEMI SOC CORP.
- John L. McCollum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit and layout for resistive random-access memory arrays having...
- Patent number 10,553,643
- Issue date Feb 4, 2020
- MICROSEMI SOC CORP.
- John L. McCollum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device and method of fabricating the same
- Patent number 10,515,695
- Issue date Dec 24, 2019
- SK Hynix Inc.
- Cheol Seong Hwang
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive switching memory cell
- Patent number 10,490,738
- Issue date Nov 26, 2019
- Imec VZW
- Bogdan Govoreanu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells, memory systems, and memory programming methods
- Patent number 10,395,731
- Issue date Aug 27, 2019
- Micron Technology, Inc.
- Wataru Otsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatuses, and circuits for programming a memory device
- Patent number 10,388,866
- Issue date Aug 20, 2019
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically actuated switch
- Patent number 10,374,155
- Issue date Aug 6, 2019
- Hewlett Packard Enterprise Development LP
- R. Stanley Williams
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Conductive metal oxide structures in non-volatile re-writable memor...
- Patent number 10,311,950
- Issue date Jun 4, 2019
- Unity Semiconductor Corporation
- Lawrence Schloss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 10,224,480
- Issue date Mar 5, 2019
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance element and memory device
- Patent number 10,164,180
- Issue date Dec 25, 2018
- TOSHIBA MEMORY CORPORATION
- Hiromichi Kuriyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods, apparatuses, and circuits for programming a memory device
- Patent number 10,164,187
- Issue date Dec 25, 2018
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells, memory systems, and memory programming methods
- Patent number 9,911,489
- Issue date Mar 6, 2018
- Micron Technology, Inc.
- Wataru Otsuka
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 9,831,425
- Issue date Nov 28, 2017
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Set-While-Verify Circuit And Reset-While Verify Circuit For Resisti...
- Publication number 20210257023
- Publication date Aug 19, 2021
- Silicon Storage Technology, Inc.
- HIEU VAN TRAN
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20210193917
- Publication date Jun 24, 2021
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Method and Apparatus for Vitamin D Enhancement in Mushrooms
- Publication number 20210142851
- Publication date May 13, 2021
- Oakshire Holdings, Inc.
- William F. CHALUPA
- A23 - FOODS OR FOODSTUFFS THEIR TREATMENT, NOT COVERED BY OTHER CLASSES
Information Patent Application
CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...
- Publication number 20210098063
- Publication date Apr 1, 2021
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20200259079
- Publication date Aug 13, 2020
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...
- Publication number 20190371396
- Publication date Dec 5, 2019
- UNITY SEMICONDUCTOR CORPORATION
- Lawrence Schloss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrically Actuated Switch
- Publication number 20190363251
- Publication date Nov 28, 2019
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- R. Stanley Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUSES, AND CIRCUITS FOR PROGRAMMING A MEMORY DEVICE
- Publication number 20190355904
- Publication date Nov 21, 2019
- Micron Technology, Inc.
- Andrea Redaelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells, Memory Systems, and Memory Programming Methods
- Publication number 20190311767
- Publication date Oct 10, 2019
- Micron Technology, Inc.
- Wataru Otsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20190272875
- Publication date Sep 5, 2019
- SK HYNIX INC.
- Cheol Seong HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20190173006
- Publication date Jun 6, 2019
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHODS, APPARATUSES, AND CIRCUITS FOR PROGRAMMING A MEMORY DEVICE
- Publication number 20190140174
- Publication date May 9, 2019
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND APPARATUS FOR VITAMIN D ENHANCEMENT IN MUSHROOMS
- Publication number 20180374536
- Publication date Dec 27, 2018
- Oakshire Holdings, Inc.
- William F. Chalupa
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING A MEMORY DEVICE
- Publication number 20180254414
- Publication date Sep 6, 2018
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Sophie BERNASCONI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE ELEMENT AND MEMORY DEVICE
- Publication number 20180145251
- Publication date May 24, 2018
- Toshiba Memory Corporation
- Hiromichi KURIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells, Memory Systems, and Memory Programming Methods
- Publication number 20180144792
- Publication date May 24, 2018
- Micron Technology, Inc.
- Wataru Otsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20180130946
- Publication date May 10, 2018
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...
- Publication number 20180114573
- Publication date Apr 26, 2018
- UNITY SEMICONDUCTOR CORPORATION
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Application
OXIDE BASED MEMORY
- Publication number 20180068723
- Publication date Mar 8, 2018
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20180040816
- Publication date Feb 8, 2018
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Gabriel MOLAS
- G11 - INFORMATION STORAGE
Information Patent Application
Electrically Actuated Switch
- Publication number 20170317277
- Publication date Nov 2, 2017
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- R. Stanley Williams
- G11 - INFORMATION STORAGE
Information Patent Application
LOW LEAKAGE RESISTIVE RANDOM ACCESS MEMORY CELLS AND PROCESSES FOR...
- Publication number 20170179382
- Publication date Jun 22, 2017
- Microsemi SoC Corporation
- John L. McCollum
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ELEMENT AND MEMORY DEVICE
- Publication number 20140376301
- Publication date Dec 25, 2014
- Tetsuya Mizuguchi
- G11 - INFORMATION STORAGE
Information Patent Application
CONDUCTIVE METAL OXIDE STRUCTURES IN NON VOLATILE RE WRITABLE MEMOR...
- Publication number 20140367629
- Publication date Dec 18, 2014
- UNITY SEMICONDUCTOR CORPORATION
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Application
OXIDE BASED MEMORY
- Publication number 20140362634
- Publication date Dec 11, 2014
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-LEVEL MEMORY ARRAYS WITH MEMORY CELLS THAT EMPLOY BIPOLAR STO...
- Publication number 20140346433
- Publication date Nov 27, 2014
- Yung-Tin Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells, Methods of Programming Memory Cells, and Methods of F...
- Publication number 20140332751
- Publication date Nov 13, 2014
- Roy E. Meade
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive Random Access Memory Cells Having METAL ALLOY Current Lim...
- Publication number 20140315369
- Publication date Oct 23, 2014
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMRISTIVE ELEMENT BASED ON HETERO-JUNCTION OXIDE
- Publication number 20140311790
- Publication date Oct 23, 2014
- Jianhua Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells, Memory Systems, and Memory Programming Methods
- Publication number 20140268992
- Publication date Sep 18, 2014
- Micron Technology, Inc.
- Wataru Otsuka
- G11 - INFORMATION STORAGE

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Two-terminal reversibly switchable memory device

Set-while-verify circuit and reset-while verify circuit for resisti...

Non-volatile memory structure and method for low programming voltag...

Electrically actuated switch

Resistive random access memory device

Two-terminal reversibly switchable memory device

Two transistor, one resistor non-volatile gain cell memory and stor...

Method and apparatus for vitamin D enhancement in mushrooms

Conductive bridge random access memory (CBRAM) devices with low the...

Conductive metal oxide structures in non-volatile re-writable memor...

Memory cells, memory systems, and memory programming methods

Architectures and layouts for an array of resistive random access m...

Methods, apparatuses, and circuits for programming a memory device

Two-terminal reversibly switchable memory device

Memory cell switch device

Method of manufacturing a memory device

Oxide based memory

Circuit and layout for resistive random-access memory arrays

Circuit and layout for resistive random-access memory arrays having...

Resistive memory device and method of fabricating the same

Resistive switching memory cell

Memory cells, memory systems, and memory programming methods

Methods, apparatuses, and circuits for programming a memory device

Electrically actuated switch

Conductive metal oxide structures in non-volatile re-writable memor...

Two-terminal reversibly switchable memory device

Variable resistance element and memory device

Methods, apparatuses, and circuits for programming a memory device

Memory cells, memory systems, and memory programming methods

Two-terminal reversibly switchable memory device

Patents Applicationslast 30 patents

Set-While-Verify Circuit And Reset-While Verify Circuit For Resisti...

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

Method and Apparatus for Vitamin D Enhancement in Mushrooms

CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...

Electrically Actuated Switch

METHODS, APPARATUSES, AND CIRCUITS FOR PROGRAMMING A MEMORY DEVICE

Memory Cells, Memory Systems, and Memory Programming Methods

RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

METHODS, APPARATUSES, AND CIRCUITS FOR PROGRAMMING A MEMORY DEVICE

METHOD AND APPARATUS FOR VITAMIN D ENHANCEMENT IN MUSHROOMS

METHOD OF MANUFACTURING A MEMORY DEVICE

VARIABLE RESISTANCE ELEMENT AND MEMORY DEVICE

Memory Cells, Memory Systems, and Memory Programming Methods

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...

OXIDE BASED MEMORY

RESISTIVE RANDOM ACCESS MEMORY DEVICE

Electrically Actuated Switch

LOW LEAKAGE RESISTIVE RANDOM ACCESS MEMORY CELLS AND PROCESSES FOR...

MEMORY ELEMENT AND MEMORY DEVICE

CONDUCTIVE METAL OXIDE STRUCTURES IN NON VOLATILE RE WRITABLE MEMOR...

OXIDE BASED MEMORY

MULTI-LEVEL MEMORY ARRAYS WITH MEMORY CELLS THAT EMPLOY BIPOLAR STO...

Memory Cells, Methods of Programming Memory Cells, and Methods of F...

Resistive Random Access Memory Cells Having METAL ALLOY Current Lim...

MEMRISTIVE ELEMENT BASED ON HETERO-JUNCTION OXIDE

Memory Cells, Memory Systems, and Memory Programming Methods