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CPC
Y10S148/161

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/161Tapered edges

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Patents Grantslast 30 patents

Information Patent Grant
Active matrix display device including a transistor
- Patent number 6,476,447
- Issue date Nov 5, 2002
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Active matrix display device
- Patent number 6,147,375
- Issue date Nov 14, 2000
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Method for fabricating shallow trench isolation structure
- Patent number 5,937,309
- Issue date Aug 10, 1999
- United Semiconductor Corp.
- Shu-Ya Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a taper shaped contact hole by oxidizing a wiring
- Patent number 5,849,611
- Issue date Dec 15, 1998
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Metallization to improve electromigration resistance
- Patent number 5,828,134
- Issue date Oct 27, 1998
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device with a graded lightly-dop...
- Patent number 5,811,342
- Issue date Sep 22, 1998
- Texas Instruments - Acer Incorporated
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of polymer spacers for the fabrication of shallow trench isolat...
- Patent number 5,801,083
- Issue date Sep 1, 1998
- Chartered Semiconductor Manufacturing, Ltd.
- Bo Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization to improve electromigration resistance by etching con...
- Patent number 5,633,197
- Issue date May 27, 1997
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming wiring with gaps in bend to improve electromigrat...
- Patent number 5,633,198
- Issue date May 27, 1997
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming metallization to improve electromigration resistance
- Patent number 5,612,252
- Issue date Mar 18, 1997
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnecting method for semiconductor device
- Patent number 5,591,675
- Issue date Jan 7, 1997
- Samsung Electronics Co., Ltd.
- Jae-woo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of sidewall insulating film
- Patent number 5,541,127
- Issue date Jul 30, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Takahiro Hoshiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 5,485,019
- Issue date Jan 16, 1996
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Method of forming contact openings having concavo-concave shape
- Patent number 5,464,794
- Issue date Nov 7, 1995
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having sidewall insulating film
- Patent number 5,432,367
- Issue date Jul 11, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Takahiro Hoshiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making tapered poly profile for TFT device manufacturing
- Patent number 5,393,682
- Issue date Feb 28, 1995
- Taiwan Semiconductor Manufacturing Company
- Chwen-Ming Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a recessed gate field effect transistor
- Patent number 5,338,703
- Issue date Aug 16, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Hiroshi Matsuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for increasing the electric strength of a multi-layer semico...
- Patent number 5,284,780
- Issue date Feb 8, 1994
- Siemens Aktiengesellschaft
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapering sidewalls of via holes
- Patent number 5,269,880
- Issue date Dec 14, 1993
- Northern Telecom Limited
- Gurvinder Jolly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer and manufacturing method therefor
- Patent number 5,225,235
- Issue date Jul 6, 1993
- Osaka Titanium Co., Ltd.
- Tetsujiro Yoshiharu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon taper process using spin-on glass
- Patent number 5,225,376
- Issue date Jul 6, 1993
- NEC Electronics, Inc.
- Lloyd W. Feaver
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Endless metal belt with strengthened edges
- Patent number 5,127,885
- Issue date Jul 7, 1992
- Xerox Corporation
- William G. Herbert
- C21 - METALLURGY OF IRON
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,128,743
- Issue date Jul 7, 1992
- Hitachi, Ltd.
- Yoichi Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a beveled semiconductor silicon wafer
- Patent number 5,110,764
- Issue date May 5, 1992
- Shin-Etsu Handotai Co., Ltd.
- Nobuyoshi Ogino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for patterned heteroepitaxial growth
- Patent number 5,084,409
- Issue date Jan 28, 1992
- Texas Instruments Incorporated
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of processing substrate for a beveled semiconductor device
- Patent number 5,045,505
- Issue date Sep 3, 1991
- Shin-Etsu Handotai Co., Ltd.
- Hirokazu Kimura
- B24 - GRINDING POLISHING
Information Patent Grant
Method of fabricating a semiconductor device
- Patent number 5,041,397
- Issue date Aug 20, 1991
- Samsung Electronics Co., Ltd.
- Nam-Yoon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a multi-layer semiconductor device using selecti...
- Patent number 5,037,777
- Issue date Aug 6, 1991
- Motorola Inc.
- Thomas C. Mele
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing process of mesa SOI MOS transistor
- Patent number 5,023,197
- Issue date Jun 11, 1991
- French State represented by the Minister of Post, Telecommunications and Space
- Michel Haond
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Beveled semiconductor silicon wafer and manufacturing method thereof
- Patent number 5,021,862
- Issue date Jun 4, 1991
- Shin-Etsu Handotai Co., Ltd.
- Nobuyoshi Ogino
- H01 - BASIC ELECTRIC ELEMENTS

Tapered edges

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Active matrix display device including a transistor

Active matrix display device

Method for fabricating shallow trench isolation structure

Method for forming a taper shaped contact hole by oxidizing a wiring

Metallization to improve electromigration resistance

Method for forming a semiconductor device with a graded lightly-dop...

Use of polymer spacers for the fabrication of shallow trench isolat...

Metallization to improve electromigration resistance by etching con...

Method of forming wiring with gaps in bend to improve electromigrat...

Method of forming metallization to improve electromigration resistance

Interconnecting method for semiconductor device

Manufacturing method of sidewall insulating film

Semiconductor device and method for forming the same

Method of forming contact openings having concavo-concave shape

Semiconductor device having sidewall insulating film

Method of making tapered poly profile for TFT device manufacturing

Method for producing a recessed gate field effect transistor

Method for increasing the electric strength of a multi-layer semico...

Tapering sidewalls of via holes

Semiconductor wafer and manufacturing method therefor

Polysilicon taper process using spin-on glass

Endless metal belt with strengthened edges

Semiconductor device and method of manufacturing the same

Method of making a beveled semiconductor silicon wafer

Method for patterned heteroepitaxial growth

Method of processing substrate for a beveled semiconductor device

Method of fabricating a semiconductor device

Method for forming a multi-layer semiconductor device using selecti...

Manufacturing process of mesa SOI MOS transistor

Beveled semiconductor silicon wafer and manufacturing method thereof

Patents Applicationslast 30 patents