the air gaps being formed by pores in the dielectric

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00

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H01L2221/1047the air gaps being formed by pores in the dielectric

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Patents Grantslast 30 patents

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the air gaps being formed by pores in the dielectric

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods of forming electronic devices comprising silicon carbide ma...

Porogen bonded gap filling material in semiconductor manufacturing

Semiconductor device including a porous dielectric layer, and metho...

Etch damage and ESL free dual damascene metal interconnect

Conformal deposition of silicon carbide films

Semiconductor device and method

Method for fabricating semiconductor device with porous decoupling...

Porogen bonded gap filling material in semiconductor manufacturing

Airgap vertical transistor without structural collapse

System and method of forming a porous low-k structure

Semiconductor device including a porous dielectric layer, and metho...

Semiconductor device

Electronic devices comprising silicon carbide materials

Interconnect structure and method

Semiconductor device with porous decoupling feature

Conformal deposition of silicon carbide films

Etch damage and ESL free dual damascene metal interconnect

Pitch quartered three-dimensional air gaps

Semiconductor device including a porous dielectric layer, and metho...

Semiconductor device

Display substrate including a nano-imprint pattern and method of ma...

Semiconductor device and method

Nanotube structure based metal damascene process

Airgap vertical transistor without structural collapse

Semiconductor structure and manufacturing method thereof

Porogen bonded gap filling material in semiconductor manufacturing

Interconnect structure and method

Remote plasma based deposition of oxygen doped silicon carbide films

Semiconductor device and method

Semiconductor device and method to fabricate the semiconductor device

Patents Applicationslast 30 patents

ELECTRONIC DEVICES COMPRISING SILICON CARBIDE MATERIALS

CONFORMAL DEPOSITION OF SILICON CARBIDE FILMS

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE INCLUDING A POROUS DIELECTRIC LAYER, AND METHO...

Porogen Bonded Gap Filling Material In Semiconductor Manufacturing

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

CONFORMAL DEPOSITION OF SILICON CARBIDE FILMS USING HETEROGENEOUS P...

METHODS OF FORMING ELECTRONIC DEVICES COMPRISING SILICON CARBIDE MA...

CONFORMAL DEPOSITION OF SILICON CARBIDE FILMS

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH POROUS DECOUPLING...

ETCH DAMAGE AND ESL FREE DUAL DAMASCENE METAL INTERCONNECT

SEMICONDUCTOR DEVICE WITH POROUS DECOUPLING FEATURE AND METHOD FOR...

SEMICONDUCTOR DEVICE INCLUDING A POROUS DIELECTRIC LAYER, AND METHO...

SEMICONDUCTOR DEVICE

Semiconductor Device and Method

ELECTRONIC DEVICES COMPRISING SILICON CARBIDE MATERIALS AND RELATED...

Porogen Bonded Gap Filling Material in Semiconductor Manufacturing

SEMICONDUCTOR DEVICE INCLUDING A POROUS DIELECTRIC LAYER, AND METHO...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD TO FABRICATE THE SEMICONDUCTOR DEVICE

Semiconductor Structure and Manufacturing Method Thereof

ETCH DAMAGE AND ESL FREE DUAL DAMASCENE METAL INTERCONNECT

Semiconductor Device Including a Porous Dielectric Layer, and Metho...

CONFORMAL DEPOSITION OF SILICON CARBIDE FILMS

BACK-END-OF-LINE STRUCTURES WITH AIR GAPS

Method of Surface Localized Pore Sealing of Porous Dielectric Material

Porogen Bonded Gap Filling Material in Semiconductor Manufacturing

ETCH DAMAGE AND ESL FREE DUAL DAMASCENE METAL INTERCONNECT

NANOTUBE STRUCTURE BASED METAL DAMASCENE PROCESS

ARTICLES INCLUDING ULTRA LOW DIELECTRIC LAYERS