the conductor material next to the insulator being a simple metal

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H01L29/495

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/495the conductor material next to the insulator being a simple metal

Industries

Patents Grantslast 30 patents

Information Patent Grant
Wide band gap semiconductor device with surface insulating film
- Patent number 11,967,627
- Issue date Apr 23, 2024
- ROHM Co, Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with nanowires and methods for fabricating th...
- Patent number 11,967,595
- Issue date Apr 23, 2024
- Samsung Electronics Co., Ltd.
- Jae Jung Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Structure for metal gate electrode and method of fabrication
- Patent number 11,961,891
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field-effect transistor device
- Patent number 11,948,973
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode high electron mobility transistor
- Patent number 11,935,947
- Issue date Mar 19, 2024
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of cutting metal gates and structures formed thereof
- Patent number 11,923,251
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsu-Hsiu Perng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device
- Patent number 11,916,029
- Issue date Feb 27, 2024
- Sumitomo Electric Industries, Ltd.
- Mitsuhiko Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having doped epitaxial region and its methods...
- Patent number 11,908,934
- Issue date Feb 20, 2024
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and static random access memory thereof
- Patent number 11,910,586
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Grant
Metal oxide semiconductor having epitaxial source drain regions and...
- Patent number 11,901,454
- Issue date Feb 13, 2024
- Sony Group Corporation
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming metal contacts on metal gates
- Patent number 11,901,426
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated dipole flow for transistor
- Patent number 11,888,045
- Issue date Jan 30, 2024
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for SRAM FinFET device having an oxide feature
- Patent number 11,889,674
- Issue date Jan 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts
- Patent number 11,887,891
- Issue date Jan 30, 2024
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random access memory cell
- Patent number 11,864,368
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jordan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D memory semiconductor devices and structures with bit-line pillars
- Patent number 11,854,646
- Issue date Dec 26, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with different threshold voltages
- Patent number 11,848,368
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lung-Kun Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate formation with varying work function layers
- Patent number 11,830,936
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jin-Dah Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processing method for substrate
- Patent number 11,823,907
- Issue date Nov 21, 2023
- Wonik IPS Co., Ltd.
- Won Jun Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin-type field effect transistor
- Patent number 11,824,057
- Issue date Nov 21, 2023
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate structure cutting process
- Patent number 11,810,909
- Issue date Nov 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multiple floating gates for multi-level c...
- Patent number 11,810,983
- Issue date Nov 7, 2023
- UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Tae Sik Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an upper epitaxial layer contacting two...
- Patent number 11,798,941
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device layout
- Patent number 11,784,180
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 11,785,759
- Issue date Oct 10, 2023
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having low-k dielectric gaps between adj...
- Patent number 11,777,026
- Issue date Oct 3, 2023
- Infineon Technologies Austria AG
- Anita Brazzale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 11,764,285
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Chuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating metal gate devices and resulting structures
- Patent number 11,764,280
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Chi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory chip structure having GAA transistors with different thresho...
- Patent number 11,757,014
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a metal gate transistor with a stacked doubl...
- Patent number 11,742,412
- Issue date Aug 29, 2023
- United Microelectronics Corp.
- Te-Chang Hsu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240128319
- Publication date Apr 18, 2024
- Samsung Electronics Co., Ltd.
- Hyunwoo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND RELATED SEM...
- Publication number 20240096711
- Publication date Mar 21, 2024
- ASM IP HOLDING B.V.
- Qi Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TFT SUBSTRATE AND MANUFACTURING METHOD THEREOF, LIQUID CRYSTAL DISP...
- Publication number 20240096977
- Publication date Mar 21, 2024
- TCL China Star Optoelectronics Technology Co., Ltd.
- Kaining LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT ARRANGEMENTS FOR TRANSISTORS
- Publication number 20240072138
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Yoshikazu Moriwaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240055493
- Publication date Feb 15, 2024
- Samsung Electronics Co., Ltd.
- Sangcheol Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS
- Publication number 20240055426
- Publication date Feb 15, 2024
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...
- Publication number 20240047461
- Publication date Feb 8, 2024
- SONY CORPORATION
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSING METHOD FOR SUBSTRATE
- Publication number 20240038537
- Publication date Feb 1, 2024
- WONIK IPS CO., LTD.
- Won Jun JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSING METHOD FOR SUBSTRATE
- Publication number 20240038538
- Publication date Feb 1, 2024
- WONIK IPS CO., LTD.
- Won Jun JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACTS
- Publication number 20240030067
- Publication date Jan 25, 2024
- Intel Corporation
- Mark T. BOHR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240014287
- Publication date Jan 11, 2024
- Samsung Electronics Co., Ltd.
- Eunkyu LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230420543
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Ling CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating Metal Gate Devices and Resulting Structures
- Publication number 20230395689
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D MEMORY SEMICONDUCTOR DEVICES AND STRUCTURES WITH BIT-LINE PILLARS
- Publication number 20230395097
- Publication date Dec 7, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR MESAS BETWEEN ADJACENT GATE...
- Publication number 20230395711
- Publication date Dec 7, 2023
- Infineon Technologies Austria AG
- Anita Brazzale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PREPARING PROGRAMMABLE DIODE, PROGRAMMABLE DIODE AND FERR...
- Publication number 20230397429
- Publication date Dec 7, 2023
- Qing Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL STRUCTURE FOR METAL GATE ELECTRODE AND METHOD OF FABRICATION
- Publication number 20230387230
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL METAL GRAIN SIZE CONTROL TO IMPROVE CMP LOADING EFFECT
- Publication number 20230387244
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Anhao CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEAT...
- Publication number 20230386830
- Publication date Nov 30, 2023
- Applied Materials, Inc.
- Xiaolin C. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CHIP STRUCTURE HAVING GAA TRANSISTORS WITH DIFFERENT THRESHO...
- Publication number 20230369434
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC AP...
- Publication number 20230363204
- Publication date Nov 9, 2023
- SONY GROUP CORPORATION
- Seiichiro Jinta
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Application
AIR GAP SPACER FOR METAL GATES
- Publication number 20230352480
- Publication date Nov 2, 2023
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230352312
- Publication date Nov 2, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- G02 - OPTICS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230352565
- Publication date Nov 2, 2023
- UNITED MICROELECTRONICS CORP.
- Te-Chang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH SIDEWALL SPACERS FOR GATE STACKS
- Publication number 20230352554
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR GATE AND CONTACT FORMATION
- Publication number 20230343834
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Han TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230343781
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Wen CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH COMPOSITE WORD LINE STRUCTURE AND METHOD...
- Publication number 20230328970
- Publication date Oct 12, 2023
- NANYA TECHNOLOGY CORPORATION
- Chun-Chi LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PACKAGED ELECTRONIC DEVICES HAVING TRANSIENT LIQUID PHASE SOLDER JO...
- Publication number 20230317670
- Publication date Oct 5, 2023
- Wolfspeed, Inc.
- Sayan Seal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATES TO ENHANCE TRANSISTOR STRAIN
- Publication number 20230307455
- Publication date Sep 28, 2023
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS

the conductor material next to the insulator being a simple metal

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Wide band gap semiconductor device with surface insulating film

Semiconductor devices with nanowires and methods for fabricating th...

Structure for metal gate electrode and method of fabrication

Gate-all-around field-effect transistor device

Enhancement mode high electron mobility transistor

Methods of cutting metal gates and structures formed thereof

Semiconductor device

Semiconductor device having doped epitaxial region and its methods...

Integrated circuit and static random access memory thereof

Metal oxide semiconductor having epitaxial source drain regions and...

Forming metal contacts on metal gates

Integrated dipole flow for transistor

Structure and method for SRAM FinFET device having an oxide feature

Self-aligned contacts

Static random access memory cell

3D memory semiconductor devices and structures with bit-line pillars

Transistors with different threshold voltages

Gate formation with varying work function layers

Processing method for substrate

Semiconductor device with fin-type field effect transistor

Metal gate structure cutting process

Semiconductor device with multiple floating gates for multi-level c...

Semiconductor device having an upper epitaxial layer contacting two...

Semiconductor device layout

Floating body memory cell having gates favoring different conductiv...

Power semiconductor device having low-k dielectric gaps between adj...

Method of manufacturing semiconductor device

Method for fabricating metal gate devices and resulting structures

Memory chip structure having GAA transistors with different thresho...

Method for fabricating a metal gate transistor with a stacked doubl...

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT DEVICE

METHOD FOR FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND RELATED SEM...

TFT SUBSTRATE AND MANUFACTURING METHOD THEREOF, LIQUID CRYSTAL DISP...

CONTACT ARRANGEMENTS FOR TRANSISTORS

SEMICONDUCTOR DEVICE

MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS

SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...

PROCESSING METHOD FOR SUBSTRATE

PROCESSING METHOD FOR SUBSTRATE

SELF-ALIGNED CONTACTS

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Method for Fabricating Metal Gate Devices and Resulting Structures

3D MEMORY SEMICONDUCTOR DEVICES AND STRUCTURES WITH BIT-LINE PILLARS

SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR MESAS BETWEEN ADJACENT GATE...

METHOD OF PREPARING PROGRAMMABLE DIODE, PROGRAMMABLE DIODE AND FERR...

NOVEL STRUCTURE FOR METAL GATE ELECTRODE AND METHOD OF FABRICATION

PARTIAL METAL GRAIN SIZE CONTROL TO IMPROVE CMP LOADING EFFECT

HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEAT...

MEMORY CHIP STRUCTURE HAVING GAA TRANSISTORS WITH DIFFERENT THRESHO...

DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC AP...

AIR GAP SPACER FOR METAL GATES

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

INTEGRATED CIRCUIT WITH SIDEWALL SPACERS FOR GATE STACKS

SEMICONDUCTOR GATE AND CONTACT FORMATION

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE WITH COMPOSITE WORD LINE STRUCTURE AND METHOD...

PACKAGED ELECTRONIC DEVICES HAVING TRANSIENT LIQUID PHASE SOLDER JO...

REPLACEMENT METAL GATES TO ENHANCE TRANSISTOR STRAIN