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the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
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H01L29/66068
the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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Method for manufacturing semiconductor device
Patent number
11,967,564
Issue date
Apr 23, 2024
Denso Corporation
Aiko Kaji
H01 - BASIC ELECTRIC ELEMENTS
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Vertical silicon carbide power MOSFET and IGBT and a method of manu...
Patent number
11,967,616
Issue date
Apr 23, 2024
HITACHI ENERGY LTD
Stephan Wirths
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Minority carrier lifetime reduction for SiC IGBT devices
Patent number
11,948,799
Issue date
Apr 2, 2024
Applied Materials, Inc.
Qintao Zhang
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Semiconductor device including trench structure and manufacturing m...
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11,929,397
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Mar 12, 2024
Infineon Technologies AG
Thomas Basler
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MOSFET in SiC with self-aligned lateral MOS channel
Patent number
11,923,450
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Mar 5, 2024
II-VI ADVANCED MATERIALS, LLC
Adolf Schoner
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SiC semiconductor device
Patent number
11,916,112
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Feb 27, 2024
Rohm Co., Ltd.
Yasuhiro Kawakami
C30 - CRYSTAL GROWTH
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MOSFET device of silicon carbide having an integrated diode and man...
Patent number
11,916,066
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Feb 27, 2024
STMicroelectronics S.r.l.
Mario Giuseppe Saggio
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Semiconductor device and semiconductor module
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11,916,069
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Feb 27, 2024
Rohm Co., Ltd.
Yuki Nakano
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Designs for silicon carbide MOSFETs
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11,908,933
Issue date
Feb 20, 2024
GeneSiC Semiconductor Inc.
Siddarth Sundaresan
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And manufacture of self-aligned power devices
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11,901,432
Issue date
Feb 13, 2024
GeneSiC Semiconductor Inc.
Siddarth Sundaresan
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SiC MOSFET with transverse P+ region
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11,901,446
Issue date
Feb 13, 2024
Unity Power Technology Limited
Kuk Fong Yip
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Silicon carbide MOSFET device and manufacturing method thereof
Patent number
11,894,440
Issue date
Feb 6, 2024
HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
Jiakun Wang
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Stack, electronic device, and method for manufacturing stack
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11,881,394
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Jan 23, 2024
Sumitomo Electric Industries, Ltd.
Fuminori Mitsuhashi
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Method of manufacturing semiconductor device with silicon carbide body
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11,881,512
Issue date
Jan 23, 2024
Infineon Technologies AG
Ralf Siemieniec
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Single sided channel mesa power junction field effect transistor
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11,869,982
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Jan 9, 2024
Monolithic Power Systems, Inc.
Vipindas Pala
H01 - BASIC ELECTRIC ELEMENTS
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Inversion channel devices on multiple crystal orientations
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11,862,669
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Jan 2, 2024
GeneSiC Semiconductor Inc.
Siddarth Sundaresan
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Manufacturing method of a semiconductor device with efficient edge...
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11,854,809
Issue date
Dec 26, 2023
STMicroelectronics S.r.l.
Edoardo Zanetti
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Method for producing a silicon carbide semiconductor component
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11,855,147
Issue date
Dec 26, 2023
Infineon Technologies AG
Ralf Siemieniec
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Semiconductor device, method for manufacturing semiconductor device...
Patent number
11,848,211
Issue date
Dec 19, 2023
Kabushiki Kaisha Toshiba
Tatsuo Shimizu
B60 - VEHICLES IN GENERAL
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Power semiconductor devices having gate trenches and buried edge te...
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11,837,629
Issue date
Dec 5, 2023
Wolfspeed, Inc.
Daniel J. Lichtenwalner
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Power semiconductor device and method of fabricating the same
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11,830,914
Issue date
Nov 28, 2023
Hyundai Mobis Co., Ltd.
Jeong Mok Ha
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Self aligned MOSFET devices and associated fabrication methods
Patent number
11,823,905
Issue date
Nov 21, 2023
SCDevice LLC
Sudarsan Uppili
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Semiconductor device, semiconductor device manufacturing method, in...
Patent number
11,824,083
Issue date
Nov 21, 2023
Kabushiki Kaisha Toshiba
Tatsuo Shimizu
B60 - VEHICLES IN GENERAL
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Silicon carbide junction field effect transistors
Patent number
11,824,094
Issue date
Nov 21, 2023
Power Integrations, Inc.
Kuo-Chang Robert Yang
H01 - BASIC ELECTRIC ELEMENTS
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Semiconductor device and method for manufacturing the same
Patent number
11,817,487
Issue date
Nov 14, 2023
Rohm Co., Ltd.
Yuki Nakano
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Semiconductor device and a manufacturing method of semiconductor de...
Patent number
11,810,970
Issue date
Nov 7, 2023
Mitsubishi Electric Corporation
Tatsuo Harada
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Semiconductor device
Patent number
11,804,520
Issue date
Oct 31, 2023
Rohm Co., Ltd.
Yuki Nakano
H01 - BASIC ELECTRIC ELEMENTS
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Semiconductor device
Patent number
11,804,545
Issue date
Oct 31, 2023
Rohm Co., Ltd.
Yuki Nakano
H01 - BASIC ELECTRIC ELEMENTS
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Channeled implants for SiC MOSFET fabrication
Patent number
11,804,537
Issue date
Oct 31, 2023
Applied Materials, Inc.
Qintao Zhang
H01 - BASIC ELECTRIC ELEMENTS
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Structure for silicon carbide integrated power MOSFETs on a single...
Patent number
11,798,938
Issue date
Oct 24, 2023
CoolCAD Electronics, LLC
Neil Goldsman
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SEMICONDUCTOR DEVICES WITH ADDITIONAL MESA STRUCTURES FOR REDUCED S...
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20240145537
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May 2, 2024
Wolfspeed, Inc.
Rahul R. Potera
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Trench Type Silicon Carbide MOSFET Structure and Preparation Method...
Publication number
20240145548
Publication date
May 2, 2024
Guangzhou ANHI Semiconductor Co., Ltd.
Xin Huang
H01 - BASIC ELECTRIC ELEMENTS
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SiC MOSFET POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
Publication number
20240136404
Publication date
Apr 25, 2024
DB HiTek Co., Ltd.
Hee Bae LEE
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POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Publication number
20240136405
Publication date
Apr 25, 2024
HYUNDAI MOBIS CO., LTD.
Ju Hwan LEE
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SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREOF
Publication number
20240136421
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Apr 25, 2024
Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
Jiakun Wang
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SILICON CARBIDE POWER SEMICONDUCTOR DEVICE HAVING UNIFORM CHANNEL L...
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20240136402
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Apr 25, 2024
TRinno Technology Co., Ltd.
Kwang Hoon OH
H01 - BASIC ELECTRIC ELEMENTS
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DESIGN AND MANUFACTURE OF SELF-ALIGNED POWER MOSFETs
Publication number
20240128348
Publication date
Apr 18, 2024
GeneSiC Semiconductor Inc.
Siddarth Sundaresan
H01 - BASIC ELECTRIC ELEMENTS
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SIC-BASED ELECTRONIC DEVICE WITH IMPROVED BODY-SOURCE COUPLING, AND...
Publication number
20240113179
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Apr 4, 2024
STMicroelectronics S.r.l.
Laura Letizia SCALIA
H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THEREOF
Publication number
20240113216
Publication date
Apr 4, 2024
INFINEON TECHNOLOGIES AG
Yuliya Lisunova
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FIELD EFFECT TRANSISTOR COMPRISING EDGE TERMINATION AREA
Publication number
20240105832
Publication date
Mar 28, 2024
INFINEON TECHNOLOGIES AG
Thomas Ralf SIEMIENIEC
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SEMICONDUCTOR DEVICE WITH GATE STRUCTURE AND CURRENT SPREAD REGION
Publication number
20240096934
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Mar 21, 2024
INFINEON TECHNOLOGIES AG
Paul ELLINGHAUS
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SYSTEMS AND METHODS FOR PILLAR EXTENSION IN TERMINATION AREAS OF WI...
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20240096936
Publication date
Mar 21, 2024
GENERAL ELECTRIC COMPANY
Collin William Hitchcock
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SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...
Publication number
20240096938
Publication date
Mar 21, 2024
Kabushiki Kaisha Toshiba
Tatsuo SHIMIZU
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THREE-DIMENSIONAL SOURCE CONTACT STRUCTURE AND FABRICATION PROCESS...
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20240096981
Publication date
Mar 21, 2024
National Yang Ming Chiao Tung University
Bing-Yue Tsui
H01 - BASIC ELECTRIC ELEMENTS
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THREE-DIMENSIONAL SOURCE CONTACT STRUCTURE AND FABRICATION PROCESS...
Publication number
20240096982
Publication date
Mar 21, 2024
National Yang Ming Chiao Tung University
Bing-Yue Tsui
H01 - BASIC ELECTRIC ELEMENTS
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POWER SEMICONDUCTOR DEVICE AND A METHOD FOR PRODUCING A POWER SEMIC...
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20240096937
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Mar 21, 2024
Hitachi Energy Switzerland AG
Marco BELLINI
H01 - BASIC ELECTRIC ELEMENTS
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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Publication number
20240088258
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Mar 14, 2024
Kabushiki Kaisha Toshiba
Tatsuo SHIMIZU
H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...
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20240087897
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Mar 14, 2024
Kabushiki Kaisha Toshiba
Tatsuo SHIMIZU
H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Publication number
20240088230
Publication date
Mar 14, 2024
Kabushiki Kaisha Toshiba
Shunsuke ASABA
H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Publication number
20240088212
Publication date
Mar 14, 2024
DENSO CORPORATION
MASAKAZU WATANABE
H01 - BASIC ELECTRIC ELEMENTS
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TRENCH MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR
Publication number
20240088215
Publication date
Mar 14, 2024
Lingrui Semiconductor (Shanghai) Co., Ltd.
Cesare Ronsisvalle
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SILICON CARBIDE POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME
Publication number
20240079454
Publication date
Mar 7, 2024
Hitachi Energy Switzerland AG
Stephan Wirths
H01 - BASIC ELECTRIC ELEMENTS
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SiC MOSFET Including Trench with Rounded Corners
Publication number
20240079236
Publication date
Mar 7, 2024
Applied Materials, Inc.
Qintao Zhang
H01 - BASIC ELECTRIC ELEMENTS
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METHOD OF MANUFACTURING OHMIC CONTACTS OF AN ELECTRONIC DEVICE, WIT...
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20240079237
Publication date
Mar 7, 2024
STMicroelectronics S.r.l.
Mario Giuseppe SAGGIO
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SIC-BASED ELECTRONIC DEVICE WITH IMPROVED GATE DIELECTRIC AND MANUF...
Publication number
20240079455
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Mar 7, 2024
STMicroelectronics S.r.l.
Patrick FIORENZA
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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Publication number
20240072119
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Feb 29, 2024
Kabushiki Kaisha Toshiba
Yukio NAKABAYASHI
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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...
Publication number
20240072122
Publication date
Feb 29, 2024
INFINEON TECHNOLOGIES AG
Michael Hell
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JUNCTION FIELD-EFFECT TRANSISTORS IMPLEMENTED IN A WIDE BANDGAP SEM...
Publication number
20240063309
Publication date
Feb 22, 2024
GLOBALFOUNDRIES U.S. Inc.
Francois Hebert
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MANUFACTURING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE
Publication number
20240055306
Publication date
Feb 15, 2024
Mitsubishi Electric Corporation
Yuichi NAGAHISA
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SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING TH...
Publication number
20240055258
Publication date
Feb 15, 2024
Fuji Electric Co., Ltd.
Yoshihito ICHIKAWA
H01 - BASIC ELECTRIC ELEMENTS