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the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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SEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
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H01L29/6606
the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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Silicon carbide semiconductor device and method for manufacturing t...
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12,211,902
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Jan 28, 2025
Denso Corporation
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Single sided channel mesa power junction field effect transistor
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12,206,028
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Jan 21, 2025
Monolithic Power Systems, Inc.
Vipindas Pala
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Cell structure of silicon carbide MOSFET device, and power semicond...
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12,205,991
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Jan 21, 2025
ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD.
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Semiconductor device
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12,199,178
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Jan 14, 2025
Rohm Co., Ltd.
Yuki Nakano
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Multi-level gate driver applied to SiC MOSFET
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12,199,150
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Jan 14, 2025
University of Electronic Science and Technology of China
Zekun Zhou
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Semiconductor device including silicon carbide region containing ox...
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12,191,356
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Jan 7, 2025
Kabushiki Kaisha Toshiba
Tatsuo Shimizu
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12,191,376
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Jan 7, 2025
XIAMEN SAN'AN INTEGRATED CIRCUIT CO., LTD.
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Method of manufacturing silicon carbide semiconductor device and si...
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12,191,359
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Fuji Electric Co., Ltd.
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Power semiconductor device and manufacturing method therefor
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12,183,818
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SOUTHEAST UNIVERSITY
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Notch shape of trench gate bottom corner for better breakdown volta...
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12,183,795
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Dec 31, 2024
SiEn (QingDao) Integrated Circuits Co., Ltd
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12,183,774
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Mitsubishi Electric Corporation
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12,176,396
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Infineon Technologies AG
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Super junction silicon carbide semiconductor device and manufacturi...
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12,170,312
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Silicon carbide semiconductor device and method of manufacturing si...
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12,166,120
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Fuji Electric Co., Ltd.
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Silicon carbide semiconductor power transistor and method of manufa...
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12,166,082
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LEAP Semiconductor Corp.
Wei-Fan Chen
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Power semiconductor device and method of fabricating the same
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12,159,903
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Hyundai Mobis Co., Ltd.
Jeong Mok Ha
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Methods of reducing the electrical and thermal resistance of SiC su...
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12,148,825
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Purdue Research Foundation
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Automatic reverse blocking bidirectional switch
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12,142,661
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Infineon Technologies Austria AG
Jonas Emanuel Huber
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Semiconductor device with sic semiconductor layer and raised portio...
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12,142,648
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Rohm Co., Ltd.
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Wolfspeed, Inc.
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Marvin Motsenbocker
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12,131,906
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Shiro Hino
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12,125,882
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12,125,884
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SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
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SiC devices with shielding structure
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12,119,377
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Infineon Technologies AG
Michael Hell
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Schottky rectifier with surge-current ruggedness
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12,107,173
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Semiconductor Components Industries, LLC
Andrei Konstantinov
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Silicon carbide semiconductor device
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12,107,123
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Oct 1, 2024
Fuji Electric Co., Ltd.
Takumi Fujimoto
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Semiconductor device having a silicon carbide drift zone over a sil...
Patent number
12,107,141
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Infineon Technologies AG
Hans-Joachim Schulze
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Patent number
12,100,764
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Sep 24, 2024
Rohm Co., Ltd.
Kentaro Nasu
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Publication date
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20250031428
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20250031394
Publication date
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Shin MIYAMOTO
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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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20250022950
Publication date
Jan 16, 2025
Hyundai Motor Company
Junghee Park
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20250022967
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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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20250022917
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Jan 16, 2025
Hyundai Motor Company
NackYong JOO
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METHOD FOR CREATING AN OHMIC CONTACT ON A HIGH-POWER ELECTRICAL DIODE
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20250015145
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Jan 9, 2025
STMicroelectronics International N.V.
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TRANSISTOR DEVICE
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20250015148
Publication date
Jan 9, 2025
INFINEON TECHNOLOGIES AG
Thomas AICHINGER
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SCHOTTKY BARRIER DIODE DEVICE AND MANUFACTURING METHOD THEREFOR
Publication number
20250015203
Publication date
Jan 9, 2025
HUBEI JIUFENGSHAN LABORATORY
Jun YUAN
H01 - BASIC ELECTRIC ELEMENTS
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SiC SEMICONDUCTOR DEVICE
Publication number
20250006797
Publication date
Jan 2, 2025
ROHM CO., LTD.
Toshio NAGATA
H01 - BASIC ELECTRIC ELEMENTS
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METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SI...
Publication number
20250006795
Publication date
Jan 2, 2025
Fuji Electric Co., Ltd.
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MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR
Publication number
20250006497
Publication date
Jan 2, 2025
YUEZHOU SEMICONDUCTOR MANUFACTURING ELECTRONICS (SHAOXING) CORP
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SILICON CARBIDE SEMICONDUCTOR DEVICES WITH SUPERJUNCTIONS
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20240429272
Publication date
Dec 26, 2024
Wolfspeed, Inc.
Rahul R. Potera
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SILICON CARBIDE DEVICE WITH SINGLE METALLIZATION PROCESS FOR OHMIC...
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20240421192
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Dec 19, 2024
Woflspeed, Inc.
Rahul R. POTERA
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SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Publication number
20240421235
Publication date
Dec 19, 2024
Huawei Digital Power Technologies Co., Ltd.
Yi YU
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LDMOS NANOSHEET TRANSISTOR
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20240413239
Publication date
Dec 12, 2024
TEXAS INSTRUMENTS INCORPORATED
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H01 - BASIC ELECTRIC ELEMENTS
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LASER ANNEAL FORMED NANOSHEET LDMOS TRANSISTOR
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20240413242
Publication date
Dec 12, 2024
TEXAS INSTRUMENTS INCORPORATED
Henry Litzmann Edwards
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SIDEWALL DOPANT SHIELDING METHODS AND APPROACHES FOR TRENCHED SEMIC...
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20240413197
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Wolfspeed, Inc.
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SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
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20240413207
Publication date
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Hitachi Energy Ltd
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SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
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20240405077
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Mitsubishi Electric Corporation
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H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE AND INTERLAYER INSULATIN...
Publication number
20240405084
Publication date
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Fuji Electric Co., Ltd.
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H01 - BASIC ELECTRIC ELEMENTS
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MOSFETS WITH IMPLANTED CHARGE COMPENSATION REGIONS
Publication number
20240387620
Publication date
Nov 21, 2024
Wolfspeed, Inc.
Kijeong Han
H01 - BASIC ELECTRIC ELEMENTS
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SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
Publication number
20240387723
Publication date
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Fuji Electric Co., Ltd.
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H01 - BASIC ELECTRIC ELEMENTS
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SILICON CARBIDE SPLIT-GATE MOSFETS INTEGRATING HIGH-SPEED FREEWHEEL...
Publication number
20240387722
Publication date
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NOVUS SEMICONDUCTORS CO., LTD.
Hang GU
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SIC STATIC INDUCTION TRANSISTOR WITH DOUBLE SIDE COOLING AND METHOD...
Publication number
20240371989
Publication date
Nov 7, 2024
Analog Power Conversion LLC
Dumitru G. SDRULLA
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MOS CONTROLLED DIODE AND MANUFACTURING METHOD THEREOF
Publication number
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Publication date
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LEAP Semiconductor Corp.
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Publication number
20240355897
Publication date
Oct 24, 2024
Wolfspeed, Inc.
Neal Oldham
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Buried Grid Double Junction Barrier Schottky Diode and Method of Ma...
Publication number
20240355938
Publication date
Oct 24, 2024
II-VI Delaware, Inc.
Shuoben Hou
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TRANSISTORS WITH FIELD-SHIELD CONTACTS AND BASE CONTACTS
Publication number
20240355872
Publication date
Oct 24, 2024
GLOBALFOUNDRIES U.S. Inc.
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SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, AND METHOD OF MAN...
Publication number
20240355922
Publication date
Oct 24, 2024
Mitsubishi Electric Corporation
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