the final conductor layer next to the insulator being a single metal

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/28079the final conductor layer next to the insulator being a single metal

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with fin transistors and manufacturing method...
- Patent number 12,170,282
- Issue date Dec 17, 2024
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating metal gate devices and resulting structures
- Patent number 12,159,916
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Chi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,087,637
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device with protection liner f...
- Patent number 12,057,348
- Issue date Aug 6, 2024
- NANYA TECHNOLOGY CORPORATION
- Huan-Yung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based device having an isolation gate interfacing with a source...
- Patent number 12,034,007
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for cut metal gate etch dimensional control
- Patent number 12,027,376
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for metal gate surface clean
- Patent number 11,996,283
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shich-Chang Suen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor devices including a fin field e...
- Patent number 11,978,775
- Issue date May 7, 2024
- Samsung Electronics Co., Ltd.
- Doohyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of cutting metal gates and structures formed thereof
- Patent number 11,923,251
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsu-Hsiu Perng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Self-protective layer formed on high-K dielectric layer
- Patent number 11,923,201
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 11,915,936
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Wei Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having doped epitaxial region and its methods...
- Patent number 11,908,934
- Issue date Feb 20, 2024
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor having epitaxial source drain regions and...
- Patent number 11,901,454
- Issue date Feb 13, 2024
- Sony Group Corporation
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced spatial ALD of metals through controlled precursor mixing
- Patent number 11,887,856
- Issue date Jan 30, 2024
- Applied Materials, Inc.
- Kelvin Chan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for silicidation of semiconductor device, and corresponding...
- Patent number 11,869,772
- Issue date Jan 9, 2024
- STMicroelectronics (Crolles 2) SAS
- Denis Monnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin-type field effect transistor
- Patent number 11,824,057
- Issue date Nov 21, 2023
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processing method for substrate
- Patent number 11,823,907
- Issue date Nov 21, 2023
- Wonik IPS Co., Ltd.
- Won Jun Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating metal gate devices and resulting structures
- Patent number 11,764,280
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Chi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of semiconductor integrated circuit fabrication
- Patent number 11,735,477
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Feng Shieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,699,731
- Issue date Jul 11, 2023
- Kioxia Corporation
- Takayuki Beppu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,664,437
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Ju Youn Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing shorting between FinFET epitaxial regions
- Patent number 11,664,375
- Issue date May 30, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for metal gate boundary isolation
- Patent number 11,658,216
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 11,557,483
- Issue date Jan 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Wei Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of cutting metal gates and structures formed thereof
- Patent number 11,545,400
- Issue date Jan 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsu-Hsiu Perng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for metal gate surface clean
- Patent number 11,410,846
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shich-Chang Suen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor having epitaxial source drain regions and...
- Patent number 11,404,573
- Issue date Aug 2, 2022
- Sony Group Corporation
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices inlcluding a fin field effect transistor
- Patent number 11,393,909
- Issue date Jul 19, 2022
- Samsung Electronics Co., Ltd.
- Doohyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,309,190
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based device having an isolation gate in physical contact with...
- Patent number 11,264,385
- Issue date Mar 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FABRICATING METAL GATE DEVICES AND RESULTING STRUCTURES
- Publication number 20240387678
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING LOW RESISTIVITY CONTACTS
- Publication number 20240379363
- Publication date Nov 14, 2024
- Applied Materials, Inc.
- Jianqiu GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Contacts on Metal Gates and Methods Thereof
- Publication number 20240379378
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Pang-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION
- Publication number 20240379773
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240363424
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH PROTECTION LINER F...
- Publication number 20240355674
- Publication date Oct 24, 2024
- NANYA TECHNOLOGY CORPORATION
- HUAN-YUNG YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CUT METAL GATE
- Publication number 20240347347
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-PROTECTIVE LAYER FORMED ON HIGH-K DIELECTRIC LAYER
- Publication number 20240203740
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...
- Publication number 20240204102
- Publication date Jun 20, 2024
- SONY GROUP CORPORATION
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR SELECTIVE DEPOSITION OF PRECURSOR MATERIALS AND RELATED...
- Publication number 20240170290
- Publication date May 23, 2024
- Entegris, Inc.
- Philip S. H. Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOPED EPITAXIAL REGION AND ITS METHODS...
- Publication number 20240145592
- Publication date May 2, 2024
- Intel Corporation
- Anand S. MURTHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240105454
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS
- Publication number 20240055426
- Publication date Feb 15, 2024
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...
- Publication number 20240047461
- Publication date Feb 8, 2024
- SONY CORPORATION
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSING METHOD FOR SUBSTRATE
- Publication number 20240038537
- Publication date Feb 1, 2024
- WONIK IPS CO., LTD.
- Won Jun JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSING METHOD FOR SUBSTRATE
- Publication number 20240038538
- Publication date Feb 1, 2024
- WONIK IPS CO., LTD.
- Won Jun JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE PULSED CVD TUNGSTEN
- Publication number 20240006180
- Publication date Jan 4, 2024
- LAM RESEARCH CORPORATION
- Yu PAN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230420543
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Ling CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating Metal Gate Devices and Resulting Structures
- Publication number 20230395689
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION
- Publication number 20230299153
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure And Method For Mosfet Device
- Publication number 20230275093
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH PROTECTION LINER F...
- Publication number 20230268226
- Publication date Aug 24, 2023
- NANYA TECHNOLOGY CORPORATION
- HUAN-YUNG YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR...
- Publication number 20230223265
- Publication date Jul 13, 2023
- Kokusai Electric Corporation
- Koei KURIBAYASHI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230146366
- Publication date May 11, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Wei SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing High-Voltage Metal Gate Device
- Publication number 20230142968
- Publication date May 11, 2023
- Shanghai Huali Integrated Circuit Corporation
- Xiaoliang Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Gate Structures and Methods of Forming the Same
- Publication number 20230115634
- Publication date Apr 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsung-Da Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHEMICAL VAPOR DEPOSITION FOR UNIFORM TUNGSTEN GROWTH
- Publication number 20230038744
- Publication date Feb 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pin-Wen CHEN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR METAL GATE SURFACE CLEAN
- Publication number 20220359189
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shich-Chang SUEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CUT METAL GATE ETCH DIMENSIONAL CONTROL
- Publication number 20220359225
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...
- Publication number 20220352373
- Publication date Nov 3, 2022
- SONY GROUP CORPORATION
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS

the final conductor layer next to the insulator being a single metal

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device with fin transistors and manufacturing method...

Method for fabricating metal gate devices and resulting structures

Semiconductor device and method of manufacture

Method for fabricating semiconductor device with protection liner f...

Fin-based device having an isolation gate interfacing with a source...

Method for cut metal gate etch dimensional control

Method for metal gate surface clean

Method of fabricating semiconductor devices including a fin field e...

Methods of cutting metal gates and structures formed thereof

Self-protective layer formed on high-K dielectric layer

Semiconductor structure and manufacturing method thereof

Semiconductor device having doped epitaxial region and its methods...

Metal oxide semiconductor having epitaxial source drain regions and...

Enhanced spatial ALD of metals through controlled precursor mixing

Method for silicidation of semiconductor device, and corresponding...

Semiconductor device with fin-type field effect transistor

Processing method for substrate

Method for fabricating metal gate devices and resulting structures

Method of semiconductor integrated circuit fabrication

Semiconductor device and manufacturing method thereof

Semiconductor devices

Minimizing shorting between FinFET epitaxial regions

Method and structure for metal gate boundary isolation

Semiconductor structure and manufacturing method thereof

Methods of cutting metal gates and structures formed thereof

Method for metal gate surface clean

Metal oxide semiconductor having epitaxial source drain regions and...

Semiconductor devices inlcluding a fin field effect transistor

Semiconductor device and method of manufacture

Fin-based device having an isolation gate in physical contact with...

Patents Applicationslast 30 patents

METHOD FOR FABRICATING METAL GATE DEVICES AND RESULTING STRUCTURES

METHODS FOR FORMING LOW RESISTIVITY CONTACTS

Metal Contacts on Metal Gates and Methods Thereof

METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH PROTECTION LINER F...

SEMICONDUCTOR DEVICE HAVING CUT METAL GATE

SELF-PROTECTIVE LAYER FORMED ON HIGH-K DIELECTRIC LAYER

METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...

METHODS FOR SELECTIVE DEPOSITION OF PRECURSOR MATERIALS AND RELATED...

SEMICONDUCTOR DEVICE HAVING DOPED EPITAXIAL REGION AND ITS METHODS...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS

SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...

PROCESSING METHOD FOR SUBSTRATE

PROCESSING METHOD FOR SUBSTRATE

LOW RESISTANCE PULSED CVD TUNGSTEN

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Method for Fabricating Metal Gate Devices and Resulting Structures

METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION

Structure And Method For Mosfet Device

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH PROTECTION LINER F...

SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Method for Manufacturing High-Voltage Metal Gate Device

Transistor Gate Structures and Methods of Forming the Same

CHEMICAL VAPOR DEPOSITION FOR UNIFORM TUNGSTEN GROWTH

METHOD FOR METAL GATE SURFACE CLEAN

METHOD FOR CUT METAL GATE ETCH DIMENSIONAL CONTROL

METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...