the final conductor layer next to the insulator being a single metal

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28079the final conductor layer next to the insulator being a single metal

Industries

Patents Grantslast 30 patents

Information Patent Grant
Methods of cutting metal gates and structures formed thereof
- Patent number 11,923,251
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsu-Hsiu Perng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Self-protective layer formed on high-K dielectric layer
- Patent number 11,923,201
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 11,915,936
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Wei Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having doped epitaxial region and its methods...
- Patent number 11,908,934
- Issue date Feb 20, 2024
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor having epitaxial source drain regions and...
- Patent number 11,901,454
- Issue date Feb 13, 2024
- Sony Group Corporation
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced spatial ALD of metals through controlled precursor mixing
- Patent number 11,887,856
- Issue date Jan 30, 2024
- Applied Materials, Inc.
- Kelvin Chan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for silicidation of semiconductor device, and corresponding...
- Patent number 11,869,772
- Issue date Jan 9, 2024
- STMicroelectronics (Crolles 2) SAS
- Denis Monnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processing method for substrate
- Patent number 11,823,907
- Issue date Nov 21, 2023
- Wonik IPS Co., Ltd.
- Won Jun Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin-type field effect transistor
- Patent number 11,824,057
- Issue date Nov 21, 2023
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating metal gate devices and resulting structures
- Patent number 11,764,280
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Chi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of semiconductor integrated circuit fabrication
- Patent number 11,735,477
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Feng Shieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,699,731
- Issue date Jul 11, 2023
- Kioxia Corporation
- Takayuki Beppu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,664,437
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Ju Youn Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing shorting between FinFET epitaxial regions
- Patent number 11,664,375
- Issue date May 30, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for metal gate boundary isolation
- Patent number 11,658,216
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 11,557,483
- Issue date Jan 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Wei Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of cutting metal gates and structures formed thereof
- Patent number 11,545,400
- Issue date Jan 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsu-Hsiu Perng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for metal gate surface clean
- Patent number 11,410,846
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shich-Chang Suen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor having epitaxial source drain regions and...
- Patent number 11,404,573
- Issue date Aug 2, 2022
- Sony Group Corporation
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices inlcluding a fin field effect transistor
- Patent number 11,393,909
- Issue date Jul 19, 2022
- Samsung Electronics Co., Ltd.
- Doohyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,309,190
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based device having an isolation gate in physical contact with...
- Patent number 11,264,385
- Issue date Mar 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 11,227,769
- Issue date Jan 18, 2022
- United Microelectronics Corp.
- Chun-Jung Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor structure, manufacturing method thereof, and d...
- Patent number 11,227,938
- Issue date Jan 18, 2022
- HKC CORPORATION LIMITED
- Qionghua Mo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a silicon-insulator layer and semiconductor devi...
- Patent number 11,195,713
- Issue date Dec 7, 2021
- Infineon Technologies AG
- Joachim Hirschler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with adhesion layer
- Patent number 11,177,365
- Issue date Nov 16, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih Wei Bih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an interconnect structure and method for...
- Patent number 11,177,173
- Issue date Nov 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Guo-Chiang Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with adhesion layer and method of making
- Patent number 11,164,957
- Issue date Nov 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih Wei Bih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of cutting metal gates and structures formed thereof
- Patent number 11,152,267
- Issue date Oct 19, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsu-Hsiu Perng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device with fin transistors and manufacturing method...
- Patent number 11,121,133
- Issue date Sep 14, 2021
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOPED EPITAXIAL REGION AND ITS METHODS...
- Publication number 20240145592
- Publication date May 2, 2024
- Intel Corporation
- Anand S. MURTHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240105454
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS
- Publication number 20240055426
- Publication date Feb 15, 2024
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...
- Publication number 20240047461
- Publication date Feb 8, 2024
- SONY CORPORATION
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSING METHOD FOR SUBSTRATE
- Publication number 20240038537
- Publication date Feb 1, 2024
- WONIK IPS CO., LTD.
- Won Jun JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSING METHOD FOR SUBSTRATE
- Publication number 20240038538
- Publication date Feb 1, 2024
- WONIK IPS CO., LTD.
- Won Jun JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE PULSED CVD TUNGSTEN
- Publication number 20240006180
- Publication date Jan 4, 2024
- LAM RESEARCH CORPORATION
- Yu PAN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230420543
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Ling CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating Metal Gate Devices and Resulting Structures
- Publication number 20230395689
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION
- Publication number 20230299153
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure And Method For Mosfet Device
- Publication number 20230275093
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH PROTECTION LINER F...
- Publication number 20230268226
- Publication date Aug 24, 2023
- NANYA TECHNOLOGY CORPORATION
- HUAN-YUNG YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR...
- Publication number 20230223265
- Publication date Jul 13, 2023
- Kokusai Electric Corporation
- Koei KURIBAYASHI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230146366
- Publication date May 11, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Wei SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing High-Voltage Metal Gate Device
- Publication number 20230142968
- Publication date May 11, 2023
- Shanghai Huali Integrated Circuit Corporation
- Xiaoliang Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Gate Structures and Methods of Forming the Same
- Publication number 20230115634
- Publication date Apr 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsung-Da Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHEMICAL VAPOR DEPOSITION FOR UNIFORM TUNGSTEN GROWTH
- Publication number 20230038744
- Publication date Feb 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pin-Wen CHEN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR METAL GATE SURFACE CLEAN
- Publication number 20220359189
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shich-Chang SUEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CUT METAL GATE ETCH DIMENSIONAL CONTROL
- Publication number 20220359225
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...
- Publication number 20220352373
- Publication date Nov 3, 2022
- SONY GROUP CORPORATION
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING A FIN FIELD EFFECT TRANSISTOR
- Publication number 20220310809
- Publication date Sep 29, 2022
- Samsung Electronics Co., Ltd.
- DOOHYUN LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTANTIALLY CARBON-FREE MOLYBDENUM-CONTAINING AND TUNGSTEN-CONTAI...
- Publication number 20220298624
- Publication date Sep 22, 2022
- Kyle Jordan Blakeney
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Structure and Method for MOSFET Device
- Publication number 20220278100
- Publication date Sep 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20220246442
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION
- Publication number 20220223695
- Publication date Jul 14, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...
- Publication number 20210375865
- Publication date Dec 2, 2021
- SONY CORPORATION
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER FORMING METHOD
- Publication number 20210313182
- Publication date Oct 7, 2021
- ASM IP HOLDING B.V.
- Chiyu Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED SPATIAL ALD OF METALS THROUGH CONTROLLED PRECURSOR MIXING
- Publication number 20210305052
- Publication date Sep 30, 2021
- Applied Materials, Inc.
- Kelvin Chan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR SILICIDATION OF SEMICONDUCTOR DEVICE, AND CORRESPONDING...
- Publication number 20210296129
- Publication date Sep 23, 2021
- STMicroelectronics (Crolles 2) SAS
- Denis Monnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20210287904
- Publication date Sep 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Wei SU
- H01 - BASIC ELECTRIC ELEMENTS

the final conductor layer next to the insulator being a single metal

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods of cutting metal gates and structures formed thereof

Self-protective layer formed on high-K dielectric layer

Semiconductor structure and manufacturing method thereof

Semiconductor device having doped epitaxial region and its methods...

Metal oxide semiconductor having epitaxial source drain regions and...

Enhanced spatial ALD of metals through controlled precursor mixing

Method for silicidation of semiconductor device, and corresponding...

Processing method for substrate

Semiconductor device with fin-type field effect transistor

Method for fabricating metal gate devices and resulting structures

Method of semiconductor integrated circuit fabrication

Semiconductor device and manufacturing method thereof

Semiconductor devices

Minimizing shorting between FinFET epitaxial regions

Method and structure for metal gate boundary isolation

Semiconductor structure and manufacturing method thereof

Methods of cutting metal gates and structures formed thereof

Method for metal gate surface clean

Metal oxide semiconductor having epitaxial source drain regions and...

Semiconductor devices inlcluding a fin field effect transistor

Semiconductor device and method of manufacture

Fin-based device having an isolation gate in physical contact with...

Method for fabricating semiconductor device

Thin film transistor structure, manufacturing method thereof, and d...

Methods of forming a silicon-insulator layer and semiconductor devi...

Semiconductor device with adhesion layer

Semiconductor device with an interconnect structure and method for...

Semiconductor device with adhesion layer and method of making

Methods of cutting metal gates and structures formed thereof

Semiconductor device with fin transistors and manufacturing method...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING DOPED EPITAXIAL REGION AND ITS METHODS...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS

SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...

PROCESSING METHOD FOR SUBSTRATE

PROCESSING METHOD FOR SUBSTRATE

LOW RESISTANCE PULSED CVD TUNGSTEN

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Method for Fabricating Metal Gate Devices and Resulting Structures

METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION

Structure And Method For Mosfet Device

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH PROTECTION LINER F...

SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Method for Manufacturing High-Voltage Metal Gate Device

Transistor Gate Structures and Methods of Forming the Same

CHEMICAL VAPOR DEPOSITION FOR UNIFORM TUNGSTEN GROWTH

METHOD FOR METAL GATE SURFACE CLEAN

METHOD FOR CUT METAL GATE ETCH DIMENSIONAL CONTROL

METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...

SEMICONDUCTOR DEVICES INCLUDING A FIN FIELD EFFECT TRANSISTOR

SUBSTANTIALLY CARBON-FREE MOLYBDENUM-CONTAINING AND TUNGSTEN-CONTAI...

Structure and Method for MOSFET Device

Semiconductor Device and Method of Manufacture

METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION

SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...

LAYER FORMING METHOD

ENHANCED SPATIAL ALD OF METALS THROUGH CONTROLLED PRECURSOR MIXING

METHOD FOR SILICIDATION OF SEMICONDUCTOR DEVICE, AND CORRESPONDING...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF