the shape of the body defining a nanostructure

Industry

CPC
H01L29/0665

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0665the shape of the body defining a nanostructure

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Size-controllable multi-stack semiconductor device and method of ma...
- Patent number 12,224,314
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Gunho Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,315
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Ju Hun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,224,209
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Cheng Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanocrystal particles and processes for synthesizing the same
- Patent number 12,215,266
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Hyunki Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Three-dimensional semiconductor device and method of fabricating th...
- Patent number 12,218,133
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 12,218,213
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- An-Hung Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory active region layout for improving memory performance
- Patent number 12,219,747
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Hao Pao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Gate oxide of nanostructure transistor with increased corner thickness
- Patent number 12,218,197
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain silicide for multigate device performance and method o...
- Patent number 12,218,214
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Routing structure of semiconductor device and forming method thereof
- Patent number 12,216,978
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Anurag Verma
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Vertical semiconductor device in narrow slots within trench
- Patent number 12,218,195
- Issue date Feb 4, 2025
- Tokyo Electron Limited
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,218,196
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with backside interconnections and method of mak...
- Patent number 12,218,057
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Wei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having stacked transistors and backside power n...
- Patent number 12,218,058
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,211,942
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Soojin Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around transistor with strained channels
- Patent number 12,211,897
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-En Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate contact structure formed from g...
- Patent number 12,211,837
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Myunghoon Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having highly integrated NMOS and PMOS t...
- Patent number 12,211,847
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Jaehoon Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructured channel regions for semiconductor devices
- Patent number 12,211,918
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with threshold voltage modulation layer
- Patent number 12,213,297
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with channel pattern formed of stacked semicon...
- Patent number 12,211,941
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Donghyuk Yeom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing K values of dielectric films through anneal
- Patent number 12,206,012
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal ring structures
- Patent number 12,205,907
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Bey Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanoscale thin film structure and implementing method thereof
- Patent number 12,205,986
- Issue date Jan 21, 2025
- KOREA ADVANCED NANO FAB CENTER
- Dong Hwan Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructure and manufacturing method thereof
- Patent number 12,205,822
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Cheng Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with inactive fin and method
- Patent number 12,205,985
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Ruei Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer, optical emission device, method of producing a wafer, and me...
- Patent number 12,205,987
- Issue date Jan 21, 2025
- Technische Universitat Munchen
- Christian Dangel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including backside conductive vias
- Patent number 12,205,997
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and electronic apparatus including the semicon...
- Patent number 12,199,165
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Changhyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seam free isolation structures and method for making the same
- Patent number 12,199,097
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Ruei Jhan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056861
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- SOOJIN JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GA...
- Publication number 20250054765
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS
- Publication number 20250056867
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048670
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048674
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040188
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Yang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING...
- Publication number 20250040236
- Publication date Jan 30, 2025
- SOCIONEXT INC.
- Junji IWAHORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250029897
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Jun Ki PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DOUBLE DIFFUSION BREAK STRUCTURES FOR MULTI-STACK SEMICON...
- Publication number 20250031360
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BACKSIDE GATE CONTACT
- Publication number 20250029925
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...
- Publication number 20250022878
- Publication date Jan 16, 2025
- Intel Corporation
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20250024657
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hua Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Contact with Low-K Contact Etch Stop Layer and Method...
- Publication number 20250022931
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., LTD
- Ting-Yeh CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARACTORS HAVING INCREASED TUNING RATIO
- Publication number 20250015159
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT...
- Publication number 20250015184
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Hagyoul BAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL FLOATING BODY MEMORY
- Publication number 20250008723
- Publication date Jan 2, 2025
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH WRAPAROUND BACKSIDE AMORPHOUS LAYER
- Publication number 20250006807
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chuan Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD-EFFECT TRANSISTOR WITH FORKED SEMICONDUCTOR STR...
- Publication number 20240429235
- Publication date Dec 26, 2024
- Intel Corporation
- Bilal Chehab
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONNECTION OVER DISCONNECTED EPITAXIAL STRUCTURE USING DIREC...
- Publication number 20240421201
- Publication date Dec 19, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONVERGENT FIN AND NANOSTRUCTURE TRANSISTOR STRUCTURE AND METHOD
- Publication number 20240421185
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Ting PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS NANOSHEET TRANSISTOR
- Publication number 20240413239
- Publication date Dec 12, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413216
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Doohyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413252
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Seungmin SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH PATTERN OVERLAY FOR ASSISTING OVERLAY SIGNA...
- Publication number 20240405100
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei-Sheng TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY BACKSIDE MIM CAPACITOR
- Publication number 20240404942
- Publication date Dec 5, 2024
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING COUNTER-DOPED STRUCTURES
- Publication number 20240405075
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiao-Chun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH-SUBSTRATE VIA AND METHOD FOR FORMING THE SAME
- Publication number 20240405069
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR SOURCE/DRAIN REGIONS
- Publication number 20240405070
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH WRAP AROUND SILICIDE LAYER
- Publication number 20240395857
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Rong LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH GATE STACK
- Publication number 20240395860
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chih LIN
- H01 - BASIC ELECTRIC ELEMENTS

the shape of the body defining a nanostructure

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Size-controllable multi-stack semiconductor device and method of ma...

Semiconductor device

Semiconductor device and manufacturing method thereof

Nanocrystal particles and processes for synthesizing the same

Three-dimensional semiconductor device and method of fabricating th...

Semiconductor device structure and method for forming the same

Memory active region layout for improving memory performance

Gate oxide of nanostructure transistor with increased corner thickness

Source/drain silicide for multigate device performance and method o...

Routing structure of semiconductor device and forming method thereof

Vertical semiconductor device in narrow slots within trench

Semiconductor device and method of manufacture

Integrated circuit with backside interconnections and method of mak...

Integrated circuits having stacked transistors and backside power n...

Semiconductor devices

Gate-all-around transistor with strained channels

Semiconductor device including gate contact structure formed from g...

Integrated circuit devices having highly integrated NMOS and PMOS t...

Nanostructured channel regions for semiconductor devices

Semiconductor devices with threshold voltage modulation layer

Semiconductor device with channel pattern formed of stacked semicon...

Reducing K values of dielectric films through anneal

Seal ring structures

Nanoscale thin film structure and implementing method thereof

Nanostructure and manufacturing method thereof

Field effect transistor with inactive fin and method

Wafer, optical emission device, method of producing a wafer, and me...

Integrated circuit including backside conductive vias

Semiconductor device and electronic apparatus including the semicon...

Seam free isolation structures and method for making the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GA...

INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

SEMICONDUCTOR DEVICE

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING...

SEMICONDUCTOR DEVICE

SELECTIVE DOUBLE DIFFUSION BREAK STRUCTURES FOR MULTI-STACK SEMICON...

SEMICONDUCTOR DEVICE HAVING BACKSIDE GATE CONTACT

USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Source/Drain Contact with Low-K Contact Etch Stop Layer and Method...

VARACTORS HAVING INCREASED TUNING RATIO

FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT...

THREE-DIMENSIONAL FLOATING BODY MEMORY

SEMICONDUCTOR STRUCTURE WITH WRAPAROUND BACKSIDE AMORPHOUS LAYER

COMPLEMENTARY FIELD-EFFECT TRANSISTOR WITH FORKED SEMICONDUCTOR STR...

TRENCH CONNECTION OVER DISCONNECTED EPITAXIAL STRUCTURE USING DIREC...

CONVERGENT FIN AND NANOSTRUCTURE TRANSISTOR STRUCTURE AND METHOD

LDMOS NANOSHEET TRANSISTOR

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT WITH PATTERN OVERLAY FOR ASSISTING OVERLAY SIGNA...

HIGH DENSITY BACKSIDE MIM CAPACITOR

SEMICONDUCTOR DEVICES HAVING COUNTER-DOPED STRUCTURES

THROUGH-SUBSTRATE VIA AND METHOD FOR FORMING THE SAME

TRANSISTOR SOURCE/DRAIN REGIONS

SEMICONDUCTOR DEVICE WITH WRAP AROUND SILICIDE LAYER

SEMICONDUCTOR DEVICE STRUCTURE WITH GATE STACK