the shape of the body defining a nanostructure

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H01L29/0665

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/0665the shape of the body defining a nanostructure

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices and methods for fabricating the same
- Patent number 12,261,204
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Mun Hyeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,261,208
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Yonghee Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with gate stack and method for formi...
- Patent number 12,261,203
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Chih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,255,206
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner filler layer for multi-patterned metal gate for nanostructure...
- Patent number 12,255,100
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,255,230
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming of inner spacer structure using semiconductor ma...
- Patent number 12,255,102
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor including gate insulating layer formed of t...
- Patent number 12,255,244
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming fin-on-nanosheet transistor stacks
- Patent number 12,255,099
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Gunho Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with dielectric fin feature
- Patent number 12,249,621
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guan-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuning gate lengths in multi-gate field effect transistors
- Patent number 12,249,636
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Hao Pao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ternary inverter and method of manufacturing the same
- Patent number 12,249,605
- Issue date Mar 11, 2025
- UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Kyung Rok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 12,249,637
- Issue date Mar 11, 2025
- SOCIONEXT INC.
- Junji Iwahori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked planar field effect transistors with 2D material channels
- Patent number 12,249,643
- Issue date Mar 11, 2025
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor, integrated circuit, and manufacturing method of transistor
- Patent number 12,249,656
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Marcus Johannes Henricus Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned backside contact integration for transistors
- Patent number 12,243,913
- Issue date Mar 4, 2025
- International Business Machines Corporation
- Nikhil Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel structures including doped 2D materials for semiconductor d...
- Patent number 12,243,934
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ching-Hua Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature for multigate device performance and method of...
- Patent number 12,243,912
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gates and method of forming
- Patent number 12,243,925
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having backside gate contact
- Patent number 12,243,823
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial source/drain recess formation with metal-comprising maski...
- Patent number 12,243,783
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hui-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming source/drain features
- Patent number 12,237,232
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- I-Hsieh Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-FET transistor with alternating nanostructures and method of f...
- Patent number 12,237,399
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-En Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional electronic component and method of manufacturing same
- Patent number 12,237,152
- Issue date Feb 25, 2025
- National Central University
- Ching-Yuan Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,237,224
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co. LTD
- Wei-Ren Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain features with improved strain properties
- Patent number 12,237,414
- Issue date Feb 25, 2025
- Taiwan Semicondcutor Manufacturing Co., Ltd.
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures in transistor devices and methods of forming same
- Patent number 12,237,419
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 12,237,421
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including insulation patterns with different...
- Patent number 12,237,385
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Bongkwan Baek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral gate material arrangements for quantum dot devices
- Patent number 12,230,687
- Issue date Feb 18, 2025
- Intel Corporation
- Roza Kotlyar
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...
- Publication number 20250072107
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- SUNGIL PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...
- Publication number 20250072052
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Chun Yi CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250072053
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- MYUNG GIL KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING SEMICONDUCTOR DEVICES
- Publication number 20250072096
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Gi Woong SHIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED VIA WITH CONDUCTIVE LINK TO ADJACENT CONTACT
- Publication number 20250072069
- Publication date Feb 27, 2025
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME
- Publication number 20250063823
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kam-Tou SIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE IN SEMICONDUCTOR METHOD AND METHOD OF FORMING THE SAME
- Publication number 20250063778
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS
- Publication number 20250063765
- Publication date Feb 20, 2025
- SAMSUNG ELECTRONICS CO,. LTD.
- Jeonghyuk Yim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056861
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- SOOJIN JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GA...
- Publication number 20250054765
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS
- Publication number 20250056867
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048670
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048674
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040188
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Yang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING...
- Publication number 20250040236
- Publication date Jan 30, 2025
- SOCIONEXT INC.
- Junji IWAHORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250029897
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Jun Ki PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DOUBLE DIFFUSION BREAK STRUCTURES FOR MULTI-STACK SEMICON...
- Publication number 20250031360
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BACKSIDE GATE CONTACT
- Publication number 20250029925
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...
- Publication number 20250022878
- Publication date Jan 16, 2025
- Intel Corporation
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20250024657
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hua Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Contact with Low-K Contact Etch Stop Layer and Method...
- Publication number 20250022931
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., LTD
- Ting-Yeh CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARACTORS HAVING INCREASED TUNING RATIO
- Publication number 20250015159
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT...
- Publication number 20250015184
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Hagyoul BAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL FLOATING BODY MEMORY
- Publication number 20250008723
- Publication date Jan 2, 2025
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH WRAPAROUND BACKSIDE AMORPHOUS LAYER
- Publication number 20250006807
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chuan Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD-EFFECT TRANSISTOR WITH FORKED SEMICONDUCTOR STR...
- Publication number 20240429235
- Publication date Dec 26, 2024
- Intel Corporation
- Bilal Chehab
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONNECTION OVER DISCONNECTED EPITAXIAL STRUCTURE USING DIREC...
- Publication number 20240421201
- Publication date Dec 19, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONVERGENT FIN AND NANOSTRUCTURE TRANSISTOR STRUCTURE AND METHOD
- Publication number 20240421185
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Ting PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS NANOSHEET TRANSISTOR
- Publication number 20240413239
- Publication date Dec 12, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413216
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Doohyun LEE
- H01 - BASIC ELECTRIC ELEMENTS

the shape of the body defining a nanostructure

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor devices and methods for fabricating the same

Integrated circuit device

Semiconductor device structure with gate stack and method for formi...

Semiconductor device

Inner filler layer for multi-patterned metal gate for nanostructure...

Semiconductor structure and method for forming the same

Methods of forming of inner spacer structure using semiconductor ma...

Field effect transistor including gate insulating layer formed of t...

Methods of forming fin-on-nanosheet transistor stacks

Semiconductor structure with dielectric fin feature

Tuning gate lengths in multi-gate field effect transistors

Ternary inverter and method of manufacturing the same

Semiconductor integrated circuit device

Stacked planar field effect transistors with 2D material channels

Transistor, integrated circuit, and manufacturing method of transistor

Self-aligned backside contact integration for transistors

Channel structures including doped 2D materials for semiconductor d...

Source/drain feature for multigate device performance and method of...

Transistor gates and method of forming

Semiconductor device having backside gate contact

Epitaxial source/drain recess formation with metal-comprising maski...

Methods for forming source/drain features

Nano-FET transistor with alternating nanostructures and method of f...

Two-dimensional electronic component and method of manufacturing same

Semiconductor device and method

Source/drain features with improved strain properties

Gate structures in transistor devices and methods of forming same

Semiconductor device structure and method for forming the same

Semiconductor devices including insulation patterns with different...

Lateral gate material arrangements for quantum dot devices

Patents Applicationslast 30 patents

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...

DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...

SEMICONDUCTOR DEVICES

METHODS OF FABRICATING SEMICONDUCTOR DEVICES

RECESSED VIA WITH CONDUCTIVE LINK TO ADJACENT CONTACT

INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME

GATE STRUCTURE IN SEMICONDUCTOR METHOD AND METHOD OF FORMING THE SAME

DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS

SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GA...

INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

SEMICONDUCTOR DEVICE

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING...

SEMICONDUCTOR DEVICE

SELECTIVE DOUBLE DIFFUSION BREAK STRUCTURES FOR MULTI-STACK SEMICON...

SEMICONDUCTOR DEVICE HAVING BACKSIDE GATE CONTACT

USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Source/Drain Contact with Low-K Contact Etch Stop Layer and Method...

VARACTORS HAVING INCREASED TUNING RATIO

FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT...

THREE-DIMENSIONAL FLOATING BODY MEMORY

SEMICONDUCTOR STRUCTURE WITH WRAPAROUND BACKSIDE AMORPHOUS LAYER

COMPLEMENTARY FIELD-EFFECT TRANSISTOR WITH FORKED SEMICONDUCTOR STR...

TRENCH CONNECTION OVER DISCONNECTED EPITAXIAL STRUCTURE USING DIREC...

CONVERGENT FIN AND NANOSTRUCTURE TRANSISTOR STRUCTURE AND METHOD

LDMOS NANOSHEET TRANSISTOR

SEMICONDUCTOR DEVICE