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the substrate being of the same material as the epitaxial layer
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CPC
C30B25/20
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Parent Industries
C
CHEMISTRY METALLURGY
C30
Crystal growth
C30B
SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D...
C30B25/00
Single-crystal growth by chemical reaction of reactive gases
Current Industry
C30B25/20
the substrate being of the same material as the epitaxial layer
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