the substrate being of the same material as the epitaxial layer

Industry

CPC
C30B25/20

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B25/00Single-crystal growth by chemical reaction of reactive gases

Current Industry

C30B25/20the substrate being of the same material as the epitaxial layer

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Vapor deposition device and method of producing epitaxial wafer
- Patent number 12,327,724
- Issue date Jun 10, 2025
- Epicrew Corporation
- Akira Okabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a composite structure comprising a thin la...
- Patent number 12,320,031
- Issue date Jun 3, 2025
- Soitec
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor silicon wafer
- Patent number 12,308,228
- Issue date May 20, 2025
- Globalwafers Japan Co., Ltd
- Takeshi Senda
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN substrate wafer and method for manufacturing same
- Patent number 12,288,686
- Issue date Apr 29, 2025
- Mitsubishi Chemical Corporation
- Kenji Iso
- C30 - CRYSTAL GROWTH
Information Patent Grant
Diamond composite body, substrate, diamond, tool including diamond,...
- Patent number 12,286,726
- Issue date Apr 29, 2025
- Sumitomo Electric Industries, Ltd.
- Yoshiki Nishibayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide wafer and semiconductor device
- Patent number 12,270,122
- Issue date Apr 8, 2025
- SENIC INC.
- Jung Woo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a substrate for the epitaxial growth of a laye...
- Patent number 12,270,123
- Issue date Apr 8, 2025
- Soitec
- Eric Guiot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer, and method of manufacturing the same
- Patent number 12,266,693
- Issue date Apr 1, 2025
- Resonac Corporation
- Yoshitaka Nishihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for stripping gallium nitride substrate
- Patent number 12,243,746
- Issue date Mar 4, 2025
- SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD.
- Fen Guo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal composite synthetic diamond material
- Patent number 12,234,570
- Issue date Feb 25, 2025
- ELEMENT SIX (UK) LIMITED
- Andrew Mark Edmonds
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Aluminum nitride single crystals having large crystal augmentation...
- Patent number 12,227,873
- Issue date Feb 18, 2025
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for determining suitability of Czochralski growth condition...
- Patent number 12,227,874
- Issue date Feb 18, 2025
- GlobalWafers Co., Ltd.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a beta-Ga2O3-based single crystal film by f...
- Patent number 12,230,500
- Issue date Feb 18, 2025
- Tamura Corporation
- Quang Tu Thieu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of optimizing the EMI shielding and infrared transparency of...
- Patent number 12,203,192
- Issue date Jan 21, 2025
- BAE Systems Information and Electronic Systems Integration Inc.
- Jeremy B. Reeves
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing same
- Patent number 12,205,989
- Issue date Jan 21, 2025
- PROTERIAL, LTD.
- Tsuyoshi Miura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing a composite structure comprising a thin layer...
- Patent number 12,198,983
- Issue date Jan 14, 2025
- Soitec
- Ionut Radu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide wafer and method for manufacturing the same
- Patent number 12,188,151
- Issue date Jan 7, 2025
- Denso Corporation
- Hiroaki Fujibayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...
- Patent number 12,188,152
- Issue date Jan 7, 2025
- Resonac Corporation
- Kensho Tanaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for determining suitability of silicon substrates for epitaxy
- Patent number 12,152,314
- Issue date Nov 26, 2024
- GlobalWafers Co., Ltd.
- Shan-Hui Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing bulk single crystal diamond on a substrate in a p...
- Patent number 12,139,812
- Issue date Nov 12, 2024
- Advanced Diamond Holdings, LLC
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and silicon carbide semiconduct...
- Patent number 12,125,881
- Issue date Oct 22, 2024
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride single crystal substrate and method for productio...
- Patent number 12,116,697
- Issue date Oct 15, 2024
- Tokuyama Corporation
- Toru Nagashima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming large area single crystal diamond substrates wi...
- Patent number 12,098,475
- Issue date Sep 24, 2024
- Board of Trustees of Michigan State University
- Timothy A. Grotjohn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a SiC substrate via an etching step, growth st...
- Patent number 12,098,476
- Issue date Sep 24, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor substrate, laminated structure, and method fo...
- Patent number 12,091,774
- Issue date Sep 17, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group-III-nitride structures and manufacturing methods thereof
- Patent number 12,095,002
- Issue date Sep 17, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacture of single crystal synthetic diamond material
- Patent number 12,065,756
- Issue date Aug 20, 2024
- Element Six Technologies Limited
- Ian Friel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing b...
- Patent number 12,060,653
- Issue date Aug 13, 2024
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for manufacturing hexagonal silicon crystal
- Patent number 12,054,849
- Issue date Aug 6, 2024
- Hyung Soo Ahn
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SILICON WAFER AND EPITAXIAL SILICON WAFER
- Publication number 20250185323
- Publication date Jun 5, 2025
- SUMCO CORPORATION
- Kohtaroh KOGA
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SILICON WAFER AND METHOD FOR PRODUCING THE SAME
- Publication number 20250179686
- Publication date Jun 5, 2025
- SUMCO CORPORATION
- Masayuki MIURA
- C30 - CRYSTAL GROWTH
Information Patent Application
ATOMIC SCALE FABRICATION OF DIAMOND QUANTUM COMPUTERS
- Publication number 20250174460
- Publication date May 29, 2025
- Quantum Brilliance PTY LTD
- Marcus DOHERTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALUMINUM NITRIDE SINGLE CRYSTALS HAVING LARGE CRYSTAL AUGMENTATION...
- Publication number 20250154681
- Publication date May 15, 2025
- Crystal IS, Inc.
- Robert T. BONDOKOV
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC EPITAXIAL WAFER
- Publication number 20250146174
- Publication date May 8, 2025
- Resonac Corporation
- Yoshikazu UMETA
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC EPITAXIAL WAFER
- Publication number 20250146178
- Publication date May 8, 2025
- Resonac Corporation
- Yoshikazu UMETA
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC EPITAXIAL WAFER
- Publication number 20250146175
- Publication date May 8, 2025
- Resonac Corporation
- Yoshikazu UMETA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20250142914
- Publication date May 1, 2025
- Sumitomo Electric Industries, Ltd.
- Takaya MIYASE
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTALLINE WAFERS AND PROCESS FOR FORMING CRYSTALLINE WAFERS
- Publication number 20250140556
- Publication date May 1, 2025
- II-VI ADVANCED MATERIALS, LLC
- Y.K. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE CRYSTALS
- Publication number 20250129514
- Publication date Apr 24, 2025
- Panasonic Holdings Corporation
- Tomio YAMASHITA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR DETERMINING SUITABILITY OF CZOCHRALSKI GROWTH CONDITION...
- Publication number 20250129512
- Publication date Apr 24, 2025
- GLOBALWAFERS CO., LTD.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
PREPARATION METHOD FOR COMPOSITE SUBSTRATE
- Publication number 20250122644
- Publication date Apr 17, 2025
- TJ INNOVATIVE SEMICONDUCTOR SUBSTRATE TECHNOLOGY CO., LTD.
- Fengwen MU
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER
- Publication number 20250109526
- Publication date Apr 3, 2025
- Resonac Corporation
- Kensho TANAKA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE HETEROJUNCTION NORMALLY-OFF HIGH-ELECTRON-MOBILITY...
- Publication number 20250092567
- Publication date Mar 20, 2025
- Wenzhou University
- Wensheng Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Epitaxy
- Publication number 20250079165
- Publication date Mar 6, 2025
- ThinSiC Inc.
- Tirunelveli Subramaniam Ravi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON EPITAXIAL SUBSTRATE AND SILICON EPI...
- Publication number 20250051961
- Publication date Feb 13, 2025
- GlobalWafers Japan Co., Ltd.
- Takeshi SENDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR REDUCING STACKING FAULTS IN SILICON CARBIDE, AND STRUCTU...
- Publication number 20250051962
- Publication date Feb 13, 2025
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MANUFACTURING PROCESS FOR SILICON CARBIDE POWER DEVICES WITH VARIAB...
- Publication number 20250043460
- Publication date Feb 6, 2025
- STMicroelectronics International N.V.
- Cateno Marco CAMALLERI
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM OXIDE FILM, AND MANUFACTURING DEVICE AND MANUFACTURING METH...
- Publication number 20250034752
- Publication date Jan 30, 2025
- NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH...
- Masaru HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR GROWING ACTIVE LAYERS IN SEQUENCE
- Publication number 20250019861
- Publication date Jan 16, 2025
- LPE S.p.A.
- Giovanni Franco
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY
- Publication number 20250011968
- Publication date Jan 9, 2025
- GLOBALWAFERS CO., LTD.
- Shan-Hui Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
CVD SINGLE CRYSTAL DIAMOND
- Publication number 20240417884
- Publication date Dec 19, 2024
- ELEMENT SIX TECHNOLOGIES LIMITED
- Benjamin Simon TRUSCOTT
- C30 - CRYSTAL GROWTH
Information Patent Application
GAN SUBSTRATE
- Publication number 20240413209
- Publication date Dec 12, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
GAN EPITAXIAL SUBSTRATE
- Publication number 20240413210
- Publication date Dec 12, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF GROWING BULK SINGLE CRYSTAL DIAMOND ON A SUBSTRATE IN A P...
- Publication number 20240401231
- Publication date Dec 5, 2024
- Advanced Diamond Holdings, LLC
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER OF MO...
- Publication number 20240352620
- Publication date Oct 24, 2024
- Siltronic AG
- Karl MANGELBERGER
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR WAFER, AND METHOD FOR MANUFA...
- Publication number 20240355621
- Publication date Oct 24, 2024
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR STRIPPING GALLIUM NITRIDE SUBSTRATE
- Publication number 20240332021
- Publication date Oct 3, 2024
- SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD.
- Fen GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DEPOSITION OF DIAMOND
- Publication number 20240318349
- Publication date Sep 26, 2024
- M7D Corporation
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...
- Publication number 20240304676
- Publication date Sep 12, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya MIYASE
- C30 - CRYSTAL GROWTH

the substrate being of the same material as the epitaxial layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Vapor deposition device and method of producing epitaxial wafer

Method for manufacturing a composite structure comprising a thin la...

Manufacturing method for semiconductor silicon wafer

GaN substrate wafer and method for manufacturing same

Diamond composite body, substrate, diamond, tool including diamond,...

Silicon carbide wafer and semiconductor device

Method for producing a substrate for the epitaxial growth of a laye...

SiC epitaxial wafer, and method of manufacturing the same

Method for stripping gallium nitride substrate

Single crystal composite synthetic diamond material

Aluminum nitride single crystals having large crystal augmentation...

Methods for determining suitability of Czochralski growth condition...

Method of manufacturing a beta-Ga2O3-based single crystal film by f...

Method of optimizing the EMI shielding and infrared transparency of...

Silicon carbide epitaxial substrate and method for manufacturing same

Method for producing a composite structure comprising a thin layer...

Silicon carbide wafer and method for manufacturing the same

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...

Methods for determining suitability of silicon substrates for epitaxy

Method of growing bulk single crystal diamond on a substrate in a p...

Silicon carbide epitaxial substrate and silicon carbide semiconduct...

Group III nitride single crystal substrate and method for productio...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Methods for forming large area single crystal diamond substrates wi...

Method for producing a SiC substrate via an etching step, growth st...

Nitride semiconductor substrate, laminated structure, and method fo...

Group-III-nitride structures and manufacturing methods thereof

Method of manufacture of single crystal synthetic diamond material

Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing b...

Apparatus and method for manufacturing hexagonal silicon crystal

Patents Applicationslast 30 patents

SILICON WAFER AND EPITAXIAL SILICON WAFER

EPITAXIAL SILICON WAFER AND METHOD FOR PRODUCING THE SAME

ATOMIC SCALE FABRICATION OF DIAMOND QUANTUM COMPUTERS

ALUMINUM NITRIDE SINGLE CRYSTALS HAVING LARGE CRYSTAL AUGMENTATION...

SiC EPITAXIAL WAFER

SiC EPITAXIAL WAFER

SiC EPITAXIAL WAFER

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

CRYSTALLINE WAFERS AND PROCESS FOR FORMING CRYSTALLINE WAFERS

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTALS

METHODS FOR DETERMINING SUITABILITY OF CZOCHRALSKI GROWTH CONDITION...

PREPARATION METHOD FOR COMPOSITE SUBSTRATE

SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER

SILICON CARBIDE HETEROJUNCTION NORMALLY-OFF HIGH-ELECTRON-MOBILITY...

Silicon Carbide Epitaxy

METHOD OF MANUFACTURING SILICON EPITAXIAL SUBSTRATE AND SILICON EPI...

METHOD FOR REDUCING STACKING FAULTS IN SILICON CARBIDE, AND STRUCTU...

MANUFACTURING PROCESS FOR SILICON CARBIDE POWER DEVICES WITH VARIAB...

GALLIUM OXIDE FILM, AND MANUFACTURING DEVICE AND MANUFACTURING METH...

PROCESS FOR GROWING ACTIVE LAYERS IN SEQUENCE

METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY

CVD SINGLE CRYSTAL DIAMOND

GAN SUBSTRATE

GAN EPITAXIAL SUBSTRATE

METHOD OF GROWING BULK SINGLE CRYSTAL DIAMOND ON A SUBSTRATE IN A P...

METHOD OF PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER OF MO...

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR WAFER, AND METHOD FOR MANUFA...

METHOD FOR STRIPPING GALLIUM NITRIDE SUBSTRATE

SELECTIVE DEPOSITION OF DIAMOND

SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...