the substrate being of the same material as the epitaxial layer

Industry

CPC
C30B25/20

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B25/00Single-crystal growth by chemical reaction of reactive gases

Current Industry

C30B25/20the substrate being of the same material as the epitaxial layer

Industries

Patents Grantslast 30 patents

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Silicon carbide epitaxial substrate and silicon carbide semiconduct...
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- Issue date Oct 22, 2024
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride single crystal substrate and method for productio...
- Patent number 12,116,697
- Issue date Oct 15, 2024
- Tokuyama Corporation
- Toru Nagashima
- C30 - CRYSTAL GROWTH
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Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming large area single crystal diamond substrates wi...
- Patent number 12,098,475
- Issue date Sep 24, 2024
- Board of Trustees of Michigan State University
- Timothy A. Grotjohn
- C30 - CRYSTAL GROWTH
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Method for producing a SiC substrate via an etching step, growth st...
- Patent number 12,098,476
- Issue date Sep 24, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
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Nitride semiconductor substrate, laminated structure, and method fo...
- Patent number 12,091,774
- Issue date Sep 17, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
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Group-III-nitride structures and manufacturing methods thereof
- Patent number 12,095,002
- Issue date Sep 17, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- C30 - CRYSTAL GROWTH
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Method of manufacture of single crystal synthetic diamond material
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- Issue date Aug 20, 2024
- Element Six Technologies Limited
- Ian Friel
- C30 - CRYSTAL GROWTH
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Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing b...
- Patent number 12,060,653
- Issue date Aug 13, 2024
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for manufacturing hexagonal silicon crystal
- Patent number 12,054,849
- Issue date Aug 6, 2024
- Hyung Soo Ahn
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method for semiconductor silicon wafer
- Patent number 12,046,469
- Issue date Jul 23, 2024
- Globalwafers Japan Co., Ltd
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal synthetic diamond material
- Patent number 12,037,702
- Issue date Jul 16, 2024
- Element Six Technologies Limited
- Andrew Mark Edmonds
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Information Patent Grant
Method of producing a synthetic diamond
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- Issue date Jul 16, 2024
- ECOTRICITY GROUP LIMITED
- Dale Vince
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for manufacturing silicon carbide epitaxial substrate and me...
- Patent number 12,020,927
- Issue date Jun 25, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya Miyase
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC semiconductor substrate, method for manufacturing same, and dev...
- Patent number 12,020,928
- Issue date Jun 25, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for forming a silicon substrate with reduced grown-in nucle...
- Patent number 11,987,901
- Issue date May 21, 2024
- GlobalWafers Co., Ltd.
- Pietro Valcozzena
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for forming a silicon substrate with reduced grown-in nucle...
- Patent number 11,987,900
- Issue date May 21, 2024
- GlobalWafers Co., Ltd.
- Pietro Valcozzena
- C30 - CRYSTAL GROWTH
Information Patent Grant
N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...
- Patent number 11,987,903
- Issue date May 21, 2024
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC epitaxial wafer, production method therefor, and defect identif...
- Patent number 11,961,736
- Issue date Apr 16, 2024
- Resonac Corporation
- Ling Guo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing etched SiC substrate and grown SiC substra...
- Patent number 11,952,678
- Issue date Apr 9, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide epitaxial wafer
- Patent number 11,948,794
- Issue date Apr 2, 2024
- Mitsubishi Electric Corporation
- Masashi Sakai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Modular reactor for microwave plasma-assisted deposition
- Patent number 11,859,279
- Issue date Jan 2, 2024
- DIAM CONCEPT
- Alix Gicquel
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Vapor deposition device and method for manufacturing epitaxial sili...
- Patent number 11,846,039
- Issue date Dec 19, 2023
- Sumco Corporation
- Kazuhiro Narahara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide single crystal
- Patent number 11,846,040
- Issue date Dec 19, 2023
- Denso Corporation
- Yuichiro Tokuda
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Single crystal synthetic diamond material
- Patent number 11,821,107
- Issue date Nov 21, 2023
- Element Six Technologies Limited
- Andrew Mark Edmonds
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Gallium nitride-based sintered compact and method for manufacturing...
- Patent number 11,802,049
- Issue date Oct 31, 2023
- Tosoh Corporation
- Masami Mesuda
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer
- Patent number 11,795,577
- Issue date Oct 24, 2023
- Resonac Corporation
- Kensho Tanaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III nitride single crystal substrate
- Patent number 11,767,612
- Issue date Sep 26, 2023
- Tokuyama Corporation
- Masayuki Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond substrate and method for manufacturing the same
- Patent number 11,753,740
- Issue date Sep 12, 2023
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi Noguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride crystal substrate having a diameter of 4 inches o...
- Patent number 11,718,927
- Issue date Aug 8, 2023
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

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- C30 - CRYSTAL GROWTH
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SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR WAFER, AND METHOD FOR MANUFA...
- Publication number 20240355621
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- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
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METHOD FOR STRIPPING GALLIUM NITRIDE SUBSTRATE
- Publication number 20240332021
- Publication date Oct 3, 2024
- SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD.
- Fen GUO
- H01 - BASIC ELECTRIC ELEMENTS
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SELECTIVE DEPOSITION OF DIAMOND
- Publication number 20240318349
- Publication date Sep 26, 2024
- M7D Corporation
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
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SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...
- Publication number 20240304676
- Publication date Sep 12, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya MIYASE
- C30 - CRYSTAL GROWTH
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SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20240301585
- Publication date Sep 12, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya MIYASE
- C30 - CRYSTAL GROWTH
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METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240297201
- Publication date Sep 5, 2024
- SUMCO CORPORATION
- Takeshi Kadono
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...
- Publication number 20240279844
- Publication date Aug 22, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN FI...
- Publication number 20240271321
- Publication date Aug 15, 2024
- SOITEC
- Frédéric Allibert
- C30 - CRYSTAL GROWTH
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CONTROL OF SURFACE MORPHOLOGY DURING THE GROWTH OF (110)-ORIENTED G...
- Publication number 20240274746
- Publication date Aug 15, 2024
- ALLIANCE FOR SUSTAINABLE ENERGY, LLC
- Kevin Louis SCHULTE
- H01 - BASIC ELECTRIC ELEMENTS
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SEED SUBSTRATE FOR NITRIDE CRYSTAL GROWTH, PRODUCTION METHOD FOR NI...
- Publication number 20240271320
- Publication date Aug 15, 2024
- Sumitomo Chemical Company, Limited
- Masafumi YOKOYAMA
- C30 - CRYSTAL GROWTH
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Method of Growing Personalized Single Crystal Diamond
- Publication number 20240240354
- Publication date Jul 18, 2024
- PLASMABILITY, LLC
- Robert J. Basnett
- C30 - CRYSTAL GROWTH
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SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCL...
- Publication number 20240234515
- Publication date Jul 11, 2024
- DENSO CORPORATION
- Hideyuki UEHIGASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR DEPOSITING PHOSPHORUS CONTAINING SILICON LAYER
- Publication number 20240213022
- Publication date Jun 27, 2024
- ASM IP HOLDING B.V.
- Brendan Marozas
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FORMING AN EPITAXIAL LAYER
- Publication number 20240203730
- Publication date Jun 20, 2024
- ASM IP HOLDING B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE-SIZE DIAMOND, MPCVD DEVICE AND PREPARATION METHOD OF LARGE-SI...
- Publication number 20240183067
- Publication date Jun 6, 2024
- ZHENGZHOU RESEARCH INSTITUTE FOR ABRASIVES & GRINDING CO., LTD.
- Xiaolei Wu
- C30 - CRYSTAL GROWTH
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METHOD FOR SIC STEP FLOW GROWTH BY REGULATING GROWTH MONMOERS USING...
- Publication number 20240183063
- Publication date Jun 6, 2024
- XIAMEN UNIVERSITY
- Junyong KANG
- C30 - CRYSTAL GROWTH
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METHOD OF OPTIMIZING THE EMI SHIELDING AND INFRARED TRANSPARENCY OF...
- Publication number 20240183066
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- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
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- Publication number 20240150932
- Publication date May 9, 2024
- Siltronic AG
- Hannes Hecht
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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POLYSILICON ROD AND METHOD FOR MANUFACTURING POLYSILICON ROD
- Publication number 20240150934
- Publication date May 9, 2024
- Shin-Etsu Chemical Co., Ltd.
- Atsushi YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCL...
- Publication number 20240136409
- Publication date Apr 25, 2024
- DENSO CORPORATION
- Hideyuki UEHIGASHI
- C30 - CRYSTAL GROWTH
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METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...
- Publication number 20240110309
- Publication date Apr 4, 2024
- Central Research Institute of Electric Power Industry
- Kiyoshi BETSUYAKU
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER
- Publication number 20240093405
- Publication date Mar 21, 2024
- Resonac Corporation
- Kensho TANAKA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND SYSTEM FOR MANUFACTURING AN OPTOELECTRONIC DEVICE AND OP...
- Publication number 20240093403
- Publication date Mar 21, 2024
- Mohammad Reza AZIZIYAN
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL
- Publication number 20240060210
- Publication date Feb 22, 2024
- ELEMENT SIX TECHNOLOGIES LIMITED
- ANDREW MARK EDMONDS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Technique for Forming Cubic Silicon Carbide and Heterojunction Sili...
- Publication number 20240047207
- Publication date Feb 8, 2024
- Christian Zmoelnig
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20240026569
- Publication date Jan 25, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki NISHIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR DEPOSITING AN EPITAXIAL LAYER ON A SUBSTRATE WAFER
- Publication number 20240021449
- Publication date Jan 18, 2024
- Siltronic AG
- Thomas Stettner
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Exfoliation Method
- Publication number 20240006243
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- ThinSiC Inc.
- Tirunelveli Subramaniam Ravi
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20230407521
- Publication date Dec 21, 2023
- Tokuyama Corporation
- Masayuki FUKUDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

the substrate being of the same material as the epitaxial layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon carbide epitaxial substrate and silicon carbide semiconduct...

Group III nitride single crystal substrate and method for productio...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Methods for forming large area single crystal diamond substrates wi...

Method for producing a SiC substrate via an etching step, growth st...

Nitride semiconductor substrate, laminated structure, and method fo...

Group-III-nitride structures and manufacturing methods thereof

Method of manufacture of single crystal synthetic diamond material

Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing b...

Apparatus and method for manufacturing hexagonal silicon crystal

Manufacturing method for semiconductor silicon wafer

Single crystal synthetic diamond material

Method of producing a synthetic diamond

Method for manufacturing silicon carbide epitaxial substrate and me...

SiC semiconductor substrate, method for manufacturing same, and dev...

Methods for forming a silicon substrate with reduced grown-in nucle...

Methods for forming a silicon substrate with reduced grown-in nucle...

N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...

SiC epitaxial wafer, production method therefor, and defect identif...

Method for manufacturing etched SiC substrate and grown SiC substra...

Method of manufacturing silicon carbide epitaxial wafer

Modular reactor for microwave plasma-assisted deposition

Vapor deposition device and method for manufacturing epitaxial sili...

Silicon carbide single crystal

Single crystal synthetic diamond material

Gallium nitride-based sintered compact and method for manufacturing...

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer

Group III nitride single crystal substrate

Diamond substrate and method for manufacturing the same

Group III nitride crystal substrate having a diameter of 4 inches o...

Patents Applicationslast 30 patents

METHOD OF PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER OF MO...

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR WAFER, AND METHOD FOR MANUFA...

METHOD FOR STRIPPING GALLIUM NITRIDE SUBSTRATE

SELECTIVE DEPOSITION OF DIAMOND

SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...

SILICON CARBIDE EPITAXIAL SUBSTRATE

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...

METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN FI...

CONTROL OF SURFACE MORPHOLOGY DURING THE GROWTH OF (110)-ORIENTED G...

SEED SUBSTRATE FOR NITRIDE CRYSTAL GROWTH, PRODUCTION METHOD FOR NI...

Method of Growing Personalized Single Crystal Diamond

SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCL...

METHOD FOR DEPOSITING PHOSPHORUS CONTAINING SILICON LAYER

METHOD OF FORMING AN EPITAXIAL LAYER

LARGE-SIZE DIAMOND, MPCVD DEVICE AND PREPARATION METHOD OF LARGE-SI...

METHOD FOR SIC STEP FLOW GROWTH BY REGULATING GROWTH MONMOERS USING...

METHOD OF OPTIMIZING THE EMI SHIELDING AND INFRARED TRANSPARENCY OF...

METHOD OF PRODUCING EPITAXIAL LAYER WAFERS IN A CHAMBER OF A DEPOSI...

POLYSILICON ROD AND METHOD FOR MANUFACTURING POLYSILICON ROD

SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCL...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...

SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

METHOD AND SYSTEM FOR MANUFACTURING AN OPTOELECTRONIC DEVICE AND OP...

SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL

Technique for Forming Cubic Silicon Carbide and Heterojunction Sili...

SILICON CARBIDE EPITAXIAL SUBSTRATE

METHOD FOR DEPOSITING AN EPITAXIAL LAYER ON A SUBSTRATE WAFER

Semiconductor Exfoliation Method

GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE