Transistor-like structures

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CPC
H01L29/7606

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7606Transistor-like structures

Industries

Patents Grantslast 30 patents

Information Patent Grant
Graphene transistor and method of manufacturing a graphene transistor
- Patent number 12,119,388
- Issue date Oct 15, 2024
- Paragraf Limited
- Thomas James Badcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel structures including doped 2D materials for semiconductor d...
- Patent number 12,100,755
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ching-Hua Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,068,405
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sheng-Kai Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vacuum channel electronic element, optical transmission circuit, an...
- Patent number 12,062,650
- Issue date Aug 13, 2024
- Yoshiyuki Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming semiconductor structures with two-dimensional materials
- Patent number 12,046,665
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including two-dimensional material and method...
- Patent number 12,040,328
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional NOR array including vertical word lines and discr...
- Patent number 12,035,535
- Issue date Jul 9, 2024
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,027,628
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yun-Yan Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor element that includes wet etc...
- Patent number 12,022,690
- Issue date Jun 25, 2024
- Samsung Display Co., Ltd.
- Jun Hyung Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a transistor
- Patent number 12,002,870
- Issue date Jun 4, 2024
- Paragraf Limited
- Thomas James Badcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate transistor device and method of operating
- Patent number 12,003,231
- Issue date Jun 4, 2024
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low noise and high-performance field effect transistors of 2-dimens...
- Patent number 11,967,629
- Issue date Apr 23, 2024
- Kansas State University Research Foundation
- Suprem R. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline dielectric systems for interconnect circuit manufacturing
- Patent number 11,967,640
- Issue date Apr 23, 2024
- Tokyo Electron Limited
- Robert D Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having channel structure with 2D material
- Patent number 11,942,536
- Issue date Mar 26, 2024
- Tokyo Electron Limited
- Robert D. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of manufacturing the same
- Patent number 11,935,790
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Minsu Seol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deformable electronic device and method of making a deformable elec...
- Patent number 11,908,894
- Issue date Feb 20, 2024
- The Board of Trustees of the University of Illinois
- Pinshane Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Assembling of molecules on a 2D material and an electronic device
- Patent number 11,908,926
- Issue date Feb 20, 2024
- GRAPHENSIC AB
- Samuel Lara-Avila
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Digital circuits comprising quantum wire resonant tunneling transis...
- Patent number 11,903,331
- Issue date Feb 13, 2024
- Koucheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer body and electronic device
- Patent number 11,884,546
- Issue date Jan 30, 2024
- Sumitomo Electric Industries, Ltd.
- Fuminori Mitsuhashi
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Memory device
- Patent number 11,871,556
- Issue date Jan 9, 2024
- SK Hynix Inc.
- Il Do Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene transistor and method of manufacturing a graphene transistor
- Patent number 11,830,925
- Issue date Nov 28, 2023
- Paragraf Limited
- Thomas James Badcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,824,106
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized stressor formation by ion implantation
- Patent number 11,728,383
- Issue date Aug 15, 2023
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with two-dimensional materials
- Patent number 11,688,605
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tse-An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies and methods of forming integrated assemblies
- Patent number 11,670,707
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- David K. Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,670,720
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yun-Yan Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative differential resistance device
- Patent number 11,670,714
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Kilsu Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor based on graphene nanoribbon and method for...
- Patent number 11,658,232
- Issue date May 23, 2023
- Tsinghua University
- Tian-Fu Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-semiconductor contact structure based on two-dimensional semi...
- Patent number 11,652,147
- Issue date May 16, 2023
- University of Science and Technology Beijing
- Yue Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional material device and method for manufacturing same
- Patent number 11,651,958
- Issue date May 16, 2023
- Nippon Telegraph and Telephone Corporation
- Yoshiaki Sekine
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
CMOS FABRICATION METHODS FOR BACK-GATE TRANSISTOR
- Publication number 20240379832
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240371988
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Kai SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SEMICONDUCTOR STRUCTURES WITH TWO-DIMENSIONAL MATERIALS
- Publication number 20240355914
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Ching CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD...
- Publication number 20240347540
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL SEMICONDUCTOR DEVICE AND ELECTRODE USED THEREIN
- Publication number 20240313080
- Publication date Sep 19, 2024
- National Tsing-Hua University
- Po-Wen Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD...
- Publication number 20240304622
- Publication date Sep 12, 2024
- Samsung Electronics Co., Ltd.
- Minsu SEOL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATE TRANSISTOR DEVICE AND METHOD OF OPERATING
- Publication number 20240275379
- Publication date Aug 15, 2024
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-TYPE 2D TRANSITION METAL DICHALCOGENIDE (TMD) TRANSISTOR
- Publication number 20240234556
- Publication date Jul 11, 2024
- HRL LABORATORIES, LLC
- Kyung-Ah SON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240234557
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Minsu SEOL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE...
- Publication number 20240222506
- Publication date Jul 4, 2024
- Intel Corporation
- Hojoon Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL CONTACT METALS FOR 2D TRANSISTORS
- Publication number 20240222461
- Publication date Jul 4, 2024
- Intel Corporation
- Ande Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...
- Publication number 20240222482
- Publication date Jul 4, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...
- Publication number 20240222484
- Publication date Jul 4, 2024
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D NANORIBBONS UTILIZING SILICON SCAFFOLDING
- Publication number 20240222483
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE DEVICE AND METHOD OF FABRICATING A GRAPHENE DEVICE
- Publication number 20240213352
- Publication date Jun 27, 2024
- Graphenea Semiconductor S.L.U.
- Elías Torres Alonso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FAST SWITCHING TRANSISTORS
- Publication number 20240204077
- Publication date Jun 20, 2024
- George Mason University
- Parameswari Raju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240186183
- Publication date Jun 6, 2024
- Samsung Electronics Co., Ltd.
- Minsu SEOL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AN...
- Publication number 20240178307
- Publication date May 30, 2024
- Samsung Electronics Co., Ltd.
- Minsu SEOL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD...
- Publication number 20240170562
- Publication date May 23, 2024
- Samsung Electronics Co., Ltd.
- Junyoung KWON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-TYPE 2D TRANSITION METAL DICHALCOGENIDE (TMD) TRANSISTOR
- Publication number 20240136429
- Publication date Apr 25, 2024
- HRL LABORATORIES, LLC
- Kyung-Ah SON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240128363
- Publication date Apr 18, 2024
- RayNext semiconductor Co., Ltd.
- Yen-Teng HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TWO DIMENSIONAL MATERIAL
- Publication number 20240113211
- Publication date Apr 4, 2024
- Samsung Electronics Co., Ltd.
- Yeonchoo CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC
- Publication number 20240113220
- Publication date Apr 4, 2024
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF TWO-DIMENSIONAL MATERIAL-BASED DEVICE HAVING AIR-GAP A...
- Publication number 20240105821
- Publication date Mar 28, 2024
- Nanjing University
- Xinran Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20240098972
- Publication date Mar 21, 2024
- SK HYNIX INC.
- Il Do KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE DIFFERENTIAL RESISTANCE DEVICE
- Publication number 20240079496
- Publication date Mar 7, 2024
- Samsung Electronics Co., Ltd.
- Kilsu JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240063297
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tse-An CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE TRANSISTOR AND METHOD OF MANUFACTURING A GRAPHENE TRANSISTOR
- Publication number 20240063289
- Publication date Feb 22, 2024
- Paragraf Limited
- Thomas James Badcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOGIC GATE DEVICE
- Publication number 20240063296
- Publication date Feb 22, 2024
- TSINGHUA UNIVERSITY
- GUANG-QI ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION
- Publication number 20240055429
- Publication date Feb 15, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS

Transistor-like structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Graphene transistor and method of manufacturing a graphene transistor

Channel structures including doped 2D materials for semiconductor d...

Semiconductor device and manufacturing method thereof

Vacuum channel electronic element, optical transmission circuit, an...

Forming semiconductor structures with two-dimensional materials

Semiconductor devices including two-dimensional material and method...

Three-dimensional NOR array including vertical word lines and discr...

Semiconductor device and method

Method of manufacturing semiconductor element that includes wet etc...

Method of manufacturing a transistor

Double gate transistor device and method of operating

Low noise and high-performance field effect transistors of 2-dimens...

Crystalline dielectric systems for interconnect circuit manufacturing

Semiconductor device having channel structure with 2D material

Field effect transistor and method of manufacturing the same

Deformable electronic device and method of making a deformable elec...

Assembling of molecules on a 2D material and an electronic device

Digital circuits comprising quantum wire resonant tunneling transis...

Multilayer body and electronic device

Memory device

Graphene transistor and method of manufacturing a graphene transistor

Semiconductor device and method of fabricating the same

Localized stressor formation by ion implantation

Semiconductor device with two-dimensional materials

Integrated assemblies and methods of forming integrated assemblies

Semiconductor device and method

Negative differential resistance device

Field effect transistor based on graphene nanoribbon and method for...

Metal-semiconductor contact structure based on two-dimensional semi...

Two-dimensional material device and method for manufacturing same

Patents Applicationslast 30 patents

CMOS FABRICATION METHODS FOR BACK-GATE TRANSISTOR

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FORMING SEMICONDUCTOR STRUCTURES WITH TWO-DIMENSIONAL MATERIALS

SEMICONDUCTOR DEVICES INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD...

TWO-DIMENSIONAL SEMICONDUCTOR DEVICE AND ELECTRODE USED THEREIN

SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD...

DOUBLE GATE TRANSISTOR DEVICE AND METHOD OF OPERATING

N-TYPE 2D TRANSITION METAL DICHALCOGENIDE (TMD) TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE...

BEOL CONTACT METALS FOR 2D TRANSISTORS

TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...

TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

GRAPHENE DEVICE AND METHOD OF FABRICATING A GRAPHENE DEVICE

FAST SWITCHING TRANSISTORS

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AN...

SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD...

N-TYPE 2D TRANSITION METAL DICHALCOGENIDE (TMD) TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE INCLUDING TWO DIMENSIONAL MATERIAL

TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

STRUCTURE OF TWO-DIMENSIONAL MATERIAL-BASED DEVICE HAVING AIR-GAP A...

MEMORY DEVICE

NEGATIVE DIFFERENTIAL RESISTANCE DEVICE

SEMICONDUCTOR DEVICE

GRAPHENE TRANSISTOR AND METHOD OF MANUFACTURING A GRAPHENE TRANSISTOR

LOGIC GATE DEVICE

2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION